FDFMA2P859T

-20V Integrated P-Channel PowerTrench® MOSFET and Schottky Diode


Qualification Data

 Test Standards:

  • Moisture Sensitivity: 1
  • Thermal Impedance: 999/86
  • ESD HBM: 200
  • ESD CDM: 2000


AttributeValueUOM
General Information
Device Marking(TOP MARK)&E&Y
&O859&C
&.&O&V
 
Family Code05C 
Package Description6LD,UMLP,DUAL,NON-JEDEC,2MM SQUARE,DUAL DAP, 0.55MM MAX 
FIT28.2 
Die Fabrication
Fabrication Process IdentifierSEE SPEC REV 
Package Assembly*
Thermal Impedance (Theta JA)86°C/Watt
Thermal Impedance (Theta JC)999°C/Watt
Moisture Sensitivity1 
Electrical Test
ESD Human Body Model (HBM)200V
ESD Charged Device Model (CDM)2000V
Package Assembly*
Wire MaterialAu 
Wire Diameter1.5 MIL 
DAP Size6L 
Frame Material0.81X1.12MM 
Die Attach TypeEpoxy / 8008-HT 

*If an attribute is listed twice, either can be used on the part.

Multilanguage - Chinese Multilanguage - English Multilanguage - Japanese Multilanguage - Korean
spacespace