ŠĻą”±į>ž’  ž’’’…†‡ˆ‰Š‹ŒŽ’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’’Ü„hWą e<s 9ŒjŒjjŒjŒjŒjŒ¤<›››››› ›č›æ E¢¢¢¢¢¢¢¢Į Ć Ć Ć F  LU L”  X\ æ jŒ¢ &¢¢¢¢æ Š jŒjŒ¢¢Š Š Š ¢„^jŒ¢jŒ¢Į ąFB!÷F½jŒ~č‘( jŒjŒjŒjŒ¢Į Š 7Š FAIRCHILD SEMICONDUCTOR DMOS LIBRARY ver1.6 Feb 1997 * *********************************** * *======================================================================= * * 2N7000 ELECTRICAL MODEL (SOT-23 Single N-Ch DMOS) * ----------------------- .SUBCKT 2N7000 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={2.1*{-0.0016*TEMP+1.04}} KP=0.35 THETA=0.086 + VMAX=2.2E5 LEVEL=3) Cgs 1 3 60p Rd 20 4 0.3 TC=0.0075 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00072*TEMP+0.982}} M=0.36 CJO=23p VJ=0.8) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=40m TT=100n) Ra 4 2 0.4 TC=0.0075 Rs 3 5 10m Ls 5 30 .5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 85p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.53 CJO=85p VJ=0.12) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS 2N7000 * * 2N7000 THERMAL MODEL * --------------------- .SUBCKT 2N7000THM 50 40 100 Rop 50 60 1meg Cop 60 70 1u IC=0 E_W 40 70 40 60 1meg E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*250*V(90,40)} R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized 2N7000 Single Pulsed rja(t) +( 0.0001 ,0.001402 ) +(0.000872 , 0.0085 ) +(0.009476 ,0.057119 ) +( 0.05 ,0.146823 ) +( 0.1 ,0.205168 ) +( 0.2 ,0.279125 ) +( 0.5 ,0.401537 ) +( 1 ,0.495428 ) +( 2 ,0.576191 ) +( 5 ,0.669571 ) +( 10.683 ,0.741601 ) +( 21.2997 ,0.810463 ) +( 50 ,0.895578 ) +( 100 ,0.953184 ) +( 156.877 ,0.975353 ) +( 216.442 ,0.979892 ) .ENDS 2N7000THM *======================================================================= * * 2N7002 ELECTRICAL MODEL (SOT-23 Single N-Ch DMOS) * ----------------------- .SUBCKT 2N7002 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={2.1*{-0.0016*TEMP+1.04}} KP=0.35 THETA=0.086 + VMAX=2.2E5 LEVEL=3) Cgs 1 3 60p Rd 20 4 0.3 TC=0.0075 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00072*TEMP+0.982}} M=0.36 CJO=23p VJ=0.8) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=40m TT=100n) Ra 4 2 0.4 TC=0.0075 Rs 3 5 10m Ls 5 30 .5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 85p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.53 CJO=85p VJ=0.12) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS 2N7002 * * 2N7002 THERMAL MODEL * --------------------- .SUBCKT 2N7002THM 50 40 100 Rop 50 60 1meg Cop 60 70 1u IC=0 E_W 40 70 40 60 1meg E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*250*V(90,40)} R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized 2N7002 Single Pulsed rja(t) +( 0.0001 ,0.001402 ) +(0.000872 , 0.0085 ) +(0.009476 ,0.057119 ) +( 0.05 ,0.146823 ) +( 0.1 ,0.205168 ) +( 0.2 ,0.279125 ) +( 0.5 ,0.401537 ) +( 1 ,0.495428 ) +( 2 ,0.576191 ) +( 5 ,0.669571 ) +( 10.683 ,0.741601 ) +( 21.2997 ,0.810463 ) +( 50 ,0.895578 ) +( 100 ,0.953184 ) +( 156.877 ,0.975353 ) +( 216.442 ,0.979892 ) .ENDS 2N7002THM * BSS123 ELECTRICAL MODEL (SOT-23 Single N-Ch DMOS) *----------------------- .SUBCKT BSS123 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.3*{-0.00184*TEMP+1.046}} KP={-0.0012*TEMP+0.6} + THETA=0.086 VMAX=2.2E5 LEVEL=3) Cgs 1 3 50p Rd 20 4 1.3 TC=0.00864 Dds 3 4 DDS .MODEL DDS D(BV={100*{0.0008*TEMP+0.98}} M=0.36 CJO=23p VJ=0.8) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=40m TT=100n) Ra 4 2 1.3 TC=0.00864 Rs 3 5 10m Ls 5 30 .5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 70p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.3 CJO=20p VJ=0.4) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS BSS123 * *======================================================================= * *BSS138 ELECTRICAL MODEL (SOT-23 Single N-Ch DMOS) *----------------------- .SUBCKT BSS138 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.3*{-0.002*TEMP+1.05}} KP={-0.0014*TEMP+0.685} + THETA=0.086 VMAX=2.2E5 LEVEL=3) Cgs 1 3 40p Rd 20 4 0.2 TC=0.0065 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00084*TEMP+0.979}} M=0.36 CJO=23p VJ=0.8) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=40m TT=100n) Ra 4 2 0.3 TC=0.0065 Rs 3 5 10m Ls 5 30 .5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 68p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.3 CJO=68p VJ=0.4) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS BSS138 * *======================================================================= * FDS6680 PRELIMINARY ELECTRICAL MODEL (SO-8 Single N-Ch DMOS) * ------------------------------------------------------------ .SUBCKT FDS6680 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={2.5*{-0.00384*TEMP+1.096}} KP={-0.05*TEMP+43} + THETA=0.096 VMAX=4E5 LEVEL=3) Cgs 1 3 1700p Rd 20 4 1m TC=0.00376 Dds 3 4 DDS .MODEL DDS D(BV={30*{0.00088*TEMP+0.978}} M=0.3 CJO=800p VJ=0.8) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=40m TT=100n) Ra 4 2 2m TC=0.00376 Rs 3 5 0.5m Ls 5 30 0.5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1300p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.5 CJO=1300p VJ=0.15) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS FDS6680 * * FDS6680 THERMAL MODEL * --------------------- .SUBCKT 6680THM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*105*V(90,40)}; Tja=Pave(t)*RJA*rja(t) R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized FDS6680 Single Pulse rja(t) + (0.0001, 0.002232) + (0.0002, 0.003156) + (0.0005, 0.00499) + (0.001, 0.007057) + (0.002, 0.00998) + (0.005, 0.01578) + (0.01, 0.022316) + (0.02, 0.03156) + (0.05, 0.049901) + (0.1, 0.070571) + (0.2, 0.099802) + (0.5, 0.157801) + (1, 0.223165) + (2, 0.304706) + (5, 0.430226) + (10, 0.532168) + (20, 0.641667) + (50, 0.789139) + (100, 0.876999) + (200, 0.940897) + (500, 1) + (999, 1) .ENDS 6680THM * *Fairchild Discretes Power & Signal Technolgies June 97 Rev.A *======================================================================= * FDV301N ELECTRICAL MODEL (SOT-23 Single N-Ch DMOS) * ----------------------- .SUBCKT FDV301N 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={0.9*(-0.00232*TEMP+1.058)} KP={-0.0005*TEMP+0.32} THETA=0.096 + VMAX=3.8E5 LEVEL=3) Cgs 1 3 90p Rd 20 4 .7 TC=0.006 Dds 3 4 DDS .MODEL DDS D(BV={25*(0.001*TEMP+0.975)} M=0.36 CJO=23p VJ=0.8) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=40m TT=100n) Ra 4 2 .7 TC=0.006 Rs 3 5 10m Ls 5 30 .7n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 25p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.53 CJO=25p VJ=0.12) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS FDV301N * * FDV301N THERMAL MODEL * --------------------- .SUBCKT 301NTHM 50 40 100 Rop 50 60 1meg Cop 60 70 1u IC=0 E_W 40 70 40 60 1meg E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*357*V(90,40)} R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized SOT-23 Single Pulsed rja(t) +( 0.0001 ,0.001402 ) +(0.000872 , 0.0085 ) +(0.009476 ,0.057119 ) +( 0.05 ,0.146823 ) +( 0.1 ,0.205168 ) +( 0.2 ,0.279125 ) +( 0.5 ,0.401537 ) +( 1 ,0.495428 ) +( 2 ,0.576191 ) +( 5 ,0.669571 ) +( 10.683 ,0.741601 ) +( 21.2997 ,0.810463 ) +( 50 ,0.895578 ) +( 100 ,0.953184 ) +( 156.877 ,0.975353 ) +( 216.442 ,0.979892 ) .ENDS 301NTHM *======================================================================= * FDV304P PRELIMINARY ELECTRICAL MODEL (SOT-23 Single P-Ch DMOS) * ------------------------ .SUBCKT FDV304P 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS PMOS (VTO={-0.8*(-0.00232*TEMP+1.058)} KP={-0.0009*TEMP+0.8225} + THETA=0.096 VMAX=3.8E5 LEVEL=3) Cgs 1 3 130p Rd 20 4 0.25 TC=0.004 Dds 4 3 DDS .MODEL DDS D(BV={25*(0.00088*TEMP+0.978)} M=0.35 CJO=100p VJ=1.0) Dbody 20 3 DBODY .MODEL DBODY D(IS=1E-12 N=1 RS=12.7m TT=25n) Ra 4 2 0.25 TC=0.004 Rs 3 5 10m Ls 5 30 0.5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER PMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 110p Rcgd 7 4 10meg Dgd 4 6 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.55 CJO=110p VJ=0.120) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS FDV304P * * FDV304P THERMAL MODEL * --------------------- .SUBCKT 304PTHM 50 40 100 Rop 50 60 1meg Cop 60 70 1u IC=0 E_W 40 70 40 60 1meg E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*357*V(90,40)} R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized SOT-23 Single Pulsed rja(t) +( 0.0001 ,0.001402 ) +(0.000872 , 0.0085 ) +(0.009476 ,0.057119 ) +( 0.05 ,0.146823 ) +( 0.1 ,0.205168 ) +( 0.2 ,0.279125 ) +( 0.5 ,0.401537 ) +( 1 ,0.495428 ) +( 2 ,0.576191 ) +( 5 ,0.669571 ) +( 10.683 ,0.741601 ) +( 21.2997 ,0.810463 ) +( 50 ,0.895578 ) +( 100 ,0.953184 ) +( 156.877 ,0.975353 ) +( 216.442 ,0.979892 ) .ENDS 304PTHM *======================================================================= *FDP7030L ELECTRICAL MODEL * ------------------------ .SUBCKT FDP7030L 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO=2 KP=65 THETA=0.086 VMAX=1.4E5 LEVEL=3) Cgs 1 3 1800p Rd 20 4 1.5m TC=0.0044 Dds 3 4 DDS .MODEL DDS D(BV={30*{0.00144*TEMP+0.964}} M=0.377 CJO=1083p VJ=1.22) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=37.9m TT=55n) Ra 4 2 1.5m TC=0.0044 Rs 3 5 0.2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 4000p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.5 CJO=4000p VJ=0.193) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS FDP7030L * .SUBCKT 7030LTHM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tjc 100 40 VALUE = {V(80,40)*1.2*V(90,40)}; Tja=Pave(t)*RJC*rjc(t) R100 100 40 1k ; where RJC=1.2 deg/W R90 90 40 1k E_rjc 90 40 table {TIME} ; Normalized FDP7030L Single Pulsed rjc(t) + (1e-005, 0.0156008) + (1.5e-005, 0.019107) + (2e-005, 0.0220629) + (3e-005, 0.0270214) + (4e-005, 0.0312016) + (5e-005, 0.0348845) + (7e-005, 0.0412759) + (0.0001, 0.0493341) + (0.00015, 0.0604217) + (0.0002, 0.069769) + (0.0003, 0.0854492) + (0.0004, 0.0986682) + (0.0005, 0.110314) + (0.0007, 0.130526) + (0.001, 0.156008) + (0.0015, 0.19107) + (0.002, 0.220629) + (0.00300068, 0.269488) + (0.004, 0.30695) + (0.00500875, 0.338816) + (0.007, 0.38417) + (0.0100302, 0.427714) + (0.015, 0.476191) + (0.0201171, 0.51115) + (0.0302385, 0.557729) + (0.0401603, 0.588408) + (0.0499347, 0.613516) + (0.0701816, 0.651838) + (0.0993117, 0.689666) + (0.150433, 0.734277) + (0.2, 0.766409) + (0.3, 0.814672) + (0.4, 0.848456) + (0.499014, 0.871326) + (0.694928, 0.901643) + (1, 0.929537) + (1.50854, 0.955371) + (1.99969, 0.970572) + (3.01226, 0.986282) + (4, 0.994209) + (4.98949, 0.997334) + (6.99375, 0.99942) + (10.009, 0.99942) .ENDS 7030LTHM *======================================================================= * FDC6322C ELECTRICAL MODEL (PRELIMINARY) (SuperSOT-6 Complementary N-Ch DMOS) * -------------------------------------------------------------- .SUBCKT FDC6322CN 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={0.9*(-0.00232*TEMP+1.058)} KP={-0.0005*TEMP+0.32} THETA=0.096 + VMAX=VMAX=3.8E5 LEVEL=3) Cgs 1 3 90p Rd 20 4 .7 TC=0.006 Dds 3 4 DDS .MODEL DDS D(BV={25*(0.001*TEMP+0.975)} M=0.36 CJO=23p VJ=0.8) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=40m TT=100n) Ra 4 2 .7 TC=0.006 Rs 3 5 10m Ls 5 30 .7n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 25p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.53 CJO=25p VJ=0.12) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS FDC6322CN * * FDC6322CP ELECTRICAL MODEL (PRELIMINARY) (SuperSOT-6 Complementary P-Ch DMOS) * --------------------------------------------------------------- .SUBCKT FDC6322CP 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS PMOS (VTO={-0.8*(-0.00232*TEMP+1.058)} KP={-0.0009*TEMP+0.8225} + THETA=0.096 VMAX=3.8E5 LEVEL=3) Cgs 1 3 130p Rd 20 4 0.25 TC=0.004 Dds 4 3 DDS .MODEL DDS D(BV={25*(0.00088*TEMP+0.978)} M=0.35 CJO=100p VJ=1.0) Dbody 20 3 DBODY .MODEL DBODY D(IS=1E-12 N=1 RS=12.7m TT=25n) Ra 4 2 0.25 TC=0.004 Rs 3 5 10m Ls 5 30 0.5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER PMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 110p Rcgd 7 4 10meg Dgd 4 6 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.55 CJO=110p VJ=0.120) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS FDC6322CP *======================================================================= * (SOIC-16 3 Phase Brushless Motor Driver) (*** PRELIMINARY MODELS ***) * NDM3000 Q1 P-Ch ELECTRICAL MODEL * --------------------------- .SUBCKT NDM3000Q1 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS PMOS (VTO={-1.7*{-0.00216*TEMP+1.054}} KP={-0.005*TEMP+4.525} + THETA=0.086 VMAX=5E5 TOX=4.25E-8 LEVEL=3) Cgs 1 3 200p Rd 20 4 60m TC=0.0036 Dds 4 3 DDS .MODEL DDS D(BV={20*{0.00064*TEMP+0.984}} M=0.25 CJO=310p VJ=0.51) Dbody 20 3 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=90m TT=29n) Ra 4 2 59m TC=0.0036 Rs 3 5 2m Ls 5 30 0.9n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER PMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1100p Rcgd 7 4 10meg Dgd 4 6 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.31 CJO=600p VJ=0.18) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDM3000Q1 * * NDM3000 Q2 N-Ch ELECTRICAL MODEL * --------------------------- .SUBCKT NDM3000Q2 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.5*{-0.00248*TEMP+1.062}} KP={-0.014*TEMP+7.55} + THETA=0.086 VMAX=5E5 LEVEL=3) Cgs 1 3 359p Rd 20 4 10m TC=0.0036 Dds 3 4 DDS .MODEL DDS D(BV={20*{0.0008*TEMP+0.98}} M=0.35 CJO=290p VJ=0.9) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=40m TT=70n) Ra 4 2 21m TC=0.0036 Rs 3 5 1m Ls 5 30 0.9n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1050p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.325 CJO=1050p VJ=0.039) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDM3000Q2 * * NDM3000 Q3 P-Ch ELECTRICAL MODEL * --------------------------- .SUBCKT NDM3000Q3 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS PMOS (VTO={-1.7*{-0.00216*TEMP+1.054}} KP={-0.005*TEMP+4.525} + THETA=0.086 VMAX=5E5 TOX=4.25E-8 LEVEL=3) Cgs 1 3 200p Rd 20 4 60m TC=0.0036 Dds 4 3 DDS .MODEL DDS D(BV={20*{0.00064*TEMP+0.984}} M=0.25 CJO=310p VJ=0.51) Dbody 20 3 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=90m TT=29n) Ra 4 2 59m TC=0.0036 Rs 3 5 2m Ls 5 30 0.9n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER PMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1100p Rcgd 7 4 10meg Dgd 4 6 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.31 CJO=600p VJ=0.18) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDM3000Q3 * * NDM3000 Q4 N-Ch ELECTRICAL MODEL * --------------------------- .SUBCKT NDM3000Q4 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.5*{-0.00248*TEMP+1.062}} KP={-0.0014*TEMP+7.55} + THETA=0.086 VMAX=5E5 LEVEL=3) Cgs 1 3 359p Rd 20 4 10m TC=0.0036 Dds 3 4 DDS .MODEL DDS D(BV={20*{0.0008*TEMP+0.98}} M=0.35 CJO=290p VJ=0.9) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=40m TT=70n) Ra 4 2 21m TC=0.0036 Rs 3 5 1m Ls 5 30 0.9n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1050p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.325 CJO=1050p VJ=0.039) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDM3000Q4 * * NDM3000 Q5 P-Ch ELECTRICAL MODEL * --------------------------- .SUBCKT NDM3000Q5 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS PMOS (VTO={-1.7*{-0.00216*TEMP+1.054}} KP={-0.005*TEMP+4.525} + THETA=0.086 VMAX=5E5 TOX=4.25E-8 LEVEL=3) Cgs 1 3 200p Rd 20 4 60m TC=0.0036 Dds 4 3 DDS .MODEL DDS D(BV={20*{0.00064*TEMP+0.984}} M=0.25 CJO=310p VJ=0.51) Dbody 20 3 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=90m TT=29n) Ra 4 2 59m TC=0.0036 Rs 3 5 2m Ls 5 30 0.9n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER PMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1100p Rcgd 7 4 10meg Dgd 4 6 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.31 CJO=600p VJ=0.18) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDM3000Q5 * * * NDM3000 Q6 N-Ch ELECTRICAL MODEL * --------------------------- .SUBCKT NDM3000Q6 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.5*{-0.00248*TEMP+1.062}} KP={-0.014*TEMP+7.55} + THETA=0.086 VMAX=5E5 LEVEL=3) Cgs 1 3 359p Rd 20 4 10m TC=0.0036 Dds 3 4 DDS .MODEL DDS D(BV={20*{0.0008*TEMP+0.98}} M=0.35 CJO=290p VJ=0.9) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=40m TT=70n) Ra 4 2 21m TC=0.0036 Rs 3 5 1m Ls 5 30 0.9n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1050p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.325 CJO=1050p VJ=0.039) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDM3000Q6 * * * NDM3000 QP P-Ch THERMAL MODEL ( *** PRELIMINARY MODEL ***) * ------------------------ .SUBCKT NDM3000QPTHM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*90*V(90,40)}; Tja=Pave(t)*RJA*rja(t) R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDM3000 QP P-Ch Single Pulsed rja(t) + (0.0001, 0.002232) + (0.0002, 0.003156) + (0.0005, 0.00499) + (0.001, 0.007057) + (0.002, 0.00998) + (0.005, 0.01578) + (0.01, 0.022316) + (0.02, 0.03156) + (0.05, 0.049901) + (0.1, 0.070571) + (0.2, 0.099802) + (0.5, 0.157801) + (1, 0.223165) + (2, 0.304706) + (5, 0.430226) + (10, 0.532168) + (20, 0.641667) + (50, 0.789139) + (100, 0.876999) + (200, 0.940897) + (500, 1) + (999, 1) .ENDS NDM3000QPTHM * * * NDM3000 QN N-Ch THERMAL MODEL ( *** PRELIMINARY MODEL ***) * ------------------------ .SUBCKT NDM3000QNTHM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*90*V(90,40)}; Tja=Pave(t)*RJA*rja(t) R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDM3000 QN N-Ch Single Pulsed rja(t) + (0.0001, 0.002232) + (0.0002, 0.003156) + (0.0005, 0.00499) + (0.001, 0.007057) + (0.002, 0.00998) + (0.005, 0.01578) + (0.01, 0.022316) + (0.02, 0.03156) + (0.05, 0.049901)+ (0.1, 0.070571) + (0.2, 0.099802) + (0.5, 0.157801) + (1, 0.223165) + (2, 0.304706) + (5, 0.430226) + (10, 0.532168) + (20, 0.641667) + (50, 0.789139) + (100, 0.876999) + (200, 0.940897) + (500, 1) + (999, 1) .ENDS NDM3000QNTHM * *======================================================================= * * NDP405A ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ----------------------------------------------- .SUBCKT NDP405A 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.4*{-0.00264*TEMP+1.066}} KP={-0.014*TEMP+6.55} + THETA=0.056 VMAX=1.9E5 LEVEL=3) Cgs 1 3 310p Rd 20 4 7.24m TC=0.0064 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.0008*TEMP+0.98}} M=0.34 CJO=312p VJ=1.2) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=116m TT=52n) Ra 4 2 33m TC=0.0064 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 600p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=900p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP405A * * * THERMAL MODEL OF NDP405A, NDP405AE, NDB405A, NDB405AE * NDP405AL, NDP405AEL, NDB405AL, NDB405AEL * NDP405B, NDP405BE, NDB405B, NDB405BE * NDP405BL, NDP405BEL, NDB405BL, NDB405BEL * --------------------------------------------------------- .SUBCKT 405THMAL 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tjc 100 40 VALUE = {V(80,40)*3*V(90,40)}; Tjc=Pave(t)*RJC*rjc(t) R100 100 40 1k R90 90 40 1k E_rjc 90 40 table {TIME} ; Normalized NDx405x Single Pulsed rjc(t) + (1e-005, 0.0248642) + (1.5e-005, 0.0304524) + (2e-005, 0.0351633) + (3e-005, 0.0430661) + (4e-005, 0.0497285) + (5e-005, 0.0555981) + (7e-005, 0.0657846) + (0.0001, 0.0786276) + (0.00015, 0.0962988) + (0.0002, 0.111196) + (0.0003, 0.136187) + (0.0004, 0.157255) + (0.0005, 0.175817) + (0.0007, 0.208029) + (0.001, 0.248642) + (0.0015, 0.304523) + (0.002, 0.351633) + (0.003, 0.424229) + (0.00400314, 0.475474) + (0.005, 0.510436) + (0.00700608, 0.558074) + (0.0100093, 0.605311) + (0.0148373, 0.650478) + (0.0200164, 0.686392) + (0.0299671, 0.727997) + (0.04, 0.753176) + (0.0501139, 0.774458) + (0.0698429, 0.800599) + (0.0999065, 0.825129) + (0.15, 0.852995) + (0.2, 0.871143) + (0.301229, 0.897258) + (0.398779, 0.914537) + (0.5, 0.92559) + (0.698881, 0.940554) + (0.999652, 0.954374) + (1.50072, 0.966226) + (2.00603, 0.973845) + (2.95383, 0.981524) + (3.9868, 0.987046) + (4.98026, 0.991486) + (6.85319, 0.995946) + (10, 1) .ENDS 405THMAL * *======================================================================= * * NDP405AE ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------ .SUBCKT NDP405AE 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.4*{-0.00264*TEMP+1.066}} KP={-0.014*TEMP+6.55} + THETA=0.056 VMAX=1.9E5 LEVEL=3) Cgs 1 3 310p Rd 20 4 7.24m TC=0.0064 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.0008*TEMP+0.98}} M=0.34 CJO=312p VJ=1.2) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=116m TT=52n) Ra 4 2 33m TC=0.0064 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 600p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=900p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP405AE * *======================================================================= * * NDB405A ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------ .SUBCKT NDB405A 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.4*{-0.00264*TEMP+1.066}} KP={-0.014*TEMP+6.55} + THETA=0.056 VMAX=1.9E5 LEVEL=3) Cgs 1 3 310p Rd 20 4 7.24m TC=0.0064 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.0008*TEMP+0.98}} M=0.34 CJO=312p VJ=1.2) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=116m TT=52n) Ra 4 2 33m TC=0.0064 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 600p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=900p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB405A * *======================================================================= * * NDB405AE ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------ .SUBCKT NDB405AE 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.4*{-0.00264*TEMP+1.066}} KP={-0.014*TEMP+6.55} + THETA=0.056 VMAX=1.9E5 LEVEL=3) Cgs 1 3 310p Rd 20 4 7.24m TC=0.0064 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.0008*TEMP+0.98}} M=0.34 CJO=312p VJ=1.2) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=116m TT=52n) Ra 4 2 33m TC=0.0064 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 600p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=900p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB405AE * *======================================================================= * * NDP405AL ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------- .SUBCKT NDP405AL 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={1.3*{-0.00264*TEMP+1.066}} KP={-0.017*TEMP+8.925} + THETA=0.086 VMAX=2.2E5 LEVEL=3) Cgs 1 3 500p Rd 20 4 8m TC=0.0072 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00088*TEMP+0.976}} M=0.36 CJO=303p VJ=1.18) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=119m TT=53n) Ra 4 2 24.5m TC=0.0072 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=2500p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP405AL * *======================================================================= * * NDP405AEL ELECTRICAL MODEL (TO-220 N-Ch DMOS) * -------------------------- .SUBCKT NDP405AEL 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={1.3*{-0.00264*TEMP+1.066}} KP={-0.017*TEMP+8.925} + THETA=0.086 VMAX=2.2E5 LEVEL=3) Cgs 1 3 500p Rd 20 4 8m TC=0.0072 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00088*TEMP+0.978}} M=0.36 CJO=303p VJ=1.18) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=119m TT=53n) Ra 4 2 25.4m TC=0.0072 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=2500p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP405AEL * *======================================================================= * * NDB405AL ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------- .SUBCKT NDB405AL 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={1.3*{-0.00264*TEMP+1.066}} KP={-0.017*TEMP+8.925} + THETA=0.086 VMAX=2.2E5 LEVEL=3) Cgs 1 3 500p Rd 20 4 8m TC=0.0072 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00088*TEMP+0.978}} M=0.36 CJO=303p VJ=1.18) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=119m TT=53n) Ra 4 2 25.3m TC=0.0072 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=2500p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB405AL * *======================================================================= * * NDB405AEL ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------- .SUBCKT NDB405AEL 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={1.3*{-0.00264*TEMP+1.066}} KP={-0.017*TEMP+8.925} + THETA=0.086 VMAX=2.2E5 LEVEL=3) Cgs 1 3 500p Rd 20 4 8m TC=0.0072 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00088*TEMP+0.978}} M=0.36 CJO=303p VJ=1.18) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=119m TT=53n) Ra 4 2 25.3m TC=0.0072 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=2500p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB405AEL * *======================================================================= * * NDP405B ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------ .SUBCKT NDP405B 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.4*{-0.00264*TEMP+1.066}} KP={-0.014*TEMP+6.55} + THETA=0.056 VMAX=1.9E5 LEVEL=3) Cgs 1 3 310p Rd 20 4 13m TC=0.0064 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.0008*TEMP+0.978}} M=0.34 CJO=312p VJ=1.2) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=116m TT=52n) Ra 4 2 55m TC=0.0064 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 600p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=900p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP405B * *======================================================================= * * NDP405BE ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------ .SUBCKT NDP405BE 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.4*{-0.00264*TEMP+1.066}} KP={-0.014*TEMP+6.55} + THETA=0.056 VMAX=1.9E5 LEVEL=3) Cgs 1 3 310p Rd 20 4 13m TC=0.0064 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.0008*TEMP+0.98}} M=0.34 CJO=312p VJ=1.2) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=116m TT=52n) Ra 4 2 55m TC=0.0064 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 600p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=900p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP405BE * *======================================================================= * * NDB405B ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------ .SUBCKT NDB405B 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.4*{-0.00264*TEMP+1.066}} KP={-0.014*TEMP+6.55} + THETA=0.056 VMAX=1.9E5 LEVEL=3) Cgs 1 3 310p Rd 20 4 13m TC=0.0064 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.0008*TEMP+0.98}} M=0.34 CJO=312p VJ=1.2) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=116m TT=52n) Ra 4 2 55m TC=0.0064 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 600p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=900p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB405B * *======================================================================= * * NDB405BE ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------ .SUBCKT NDB405BE 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.4*{-0.00264*TEMP+1.066}} KP={-0.014*TEMP+6.55} + THETA=0.056 VMAX=1.9E5 LEVEL=3) Cgs 1 3 310p Rd 20 4 13m TC=0.0064 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.0008*TEMP+0.98}} M=0.34 CJO=312p VJ=1.2) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=116m TT=52n) Ra 4 2 55m TC=0.0064 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 600p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=900p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB405BE * *======================================================================= * * NDP405BL ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------- .SUBCKT NDP405BL 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={1.3*{-0.00264*TEMP+1.066}} KP={-0.017*TEMP+8.925} + THETA=0.086 VMAX=2.2E5 LEVEL=3) Cgs 1 3 500p Rd 20 4 14m TC=0.0072 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00088*TEMP+0.978}} M=0.36 CJO=303p VJ=1.18) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=119m TT=53n) Ra 4 2 47m TC=0.0072 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=2500p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP405BL * *======================================================================= * * NDP405BEL ELECTRICAL MODEL (TO-220 N-Ch DMOS) * -------------------------- .SUBCKT NDP405BEL 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={1.3*{-0.00264*TEMP+1.066}} KP={-0.017*TEMP+8.925} + THETA=0.086 VMAX=2.2E5 LEVEL=3) Cgs 1 3 500p Rd 20 4 14m TC=0.0072 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00088*TEMP+0.978}} M=0.36 CJO=303p VJ=1.18) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=119m TT=53n) Ra 4 2 47m TC=0.0072 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=2500p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP405BEL * *======================================================================= * * NDB405BL ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------ .SUBCKT NDB405BL 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={1.3*{-0.00264*TEMP+1.066}} KP={-0.017*TEMP+8.925} + THETA=0.086 VMAX=2.2E5 LEVEL=3) Cgs 1 3 500p Rd 20 4 14m TC=0.0072 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00088*TEMP+0.978}} M=0.36 CJO=303p VJ=1.18) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=119m TT=53n) Ra 4 2 47m TC=0.0072 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=2500p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB405BL * *======================================================================= * * NDB405BEL ELECTRICAL MODEL (TO-263 N-Ch DMOS) * -------------------------- .SUBCKT NDB405BEL 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={1.3*{-0.00264*TEMP+1.066}} KP={-0.017*TEMP+8.925} + THETA=0.086 VMAX=2.2E5 LEVEL=3) Cgs 1 3 500p Rd 20 4 14m TC=0.0072 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00088*TEMP+0.978}} M=0.36 CJO=303p VJ=1.18) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=119m TT=53n) Ra 4 2 47m TC=0.0072 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=2500p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB405BEL * *======================================================================= * *NDB4050 ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ---------------------- .SUBCKT NDB4050 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.1*{-0.00264*TEMP+1.066}} KP={-0.014*TEMP+6.55} + THETA=0.056 VMAX=1.9E5 LEVEL=3) Cgs 1 3 310p Rd 20 4 7m TC=0.0072 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.0008*TEMP+0.98}} M=0.34 CJO=312p VJ=1.2) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=116m TT=52n) Ra 4 2 31m TC=0.0072 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 600p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=900p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB4050 * *===================================================================== * *NDP4050 ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ---------------------- .SUBCKT NDP4050 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.1*{-0.00264*TEMP+1.066}} KP={-0.014*TEMP+6.55} + THETA=0.056 VMAX=1.9E5 LEVEL=3) Cgs 1 3 310p Rd 20 4 7m TC=0.0072 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.0008*TEMP+0.98}} M=0.34 CJO=312p VJ=1.2) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=116m TT=52n) Ra 4 2 31m TC=0.0072 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 600p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=900p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP4050 * * * NDP4050 THERMAL MODEL * --------------------- .SUBCKT 4050THM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tjc 100 40 VALUE = {V(80,40)*3*V(90,40)}; Tjc=Pave(t)*RJC*rjc(t) R100 100 40 1k R90 90 40 1k E_rjc 90 40 table {TIME} ; Normalized NDP4050 Single Pulsed rjc(t) + (1e-005, 0.0248642) + (1.5e-005, 0.0304524) + (2e-005, 0.0351633) + (3e-005, 0.0430661) + (4e-005, 0.0497285) + (5e-005, 0.0555981) + (7e-005, 0.0657846) + (0.0001, 0.0786276) + (0.00015, 0.0962988) + (0.0002, 0.111196) + (0.0003, 0.136187) + (0.0004, 0.157255) + (0.0005, 0.175817) + (0.0007, 0.208029) + (0.001, 0.248642) + (0.0015, 0.304523) + (0.002, 0.351633) + (0.003, 0.424229) + (0.00400314, 0.475474) + (0.005, 0.510436) + (0.00700608, 0.558074) + (0.0100093, 0.605311) + (0.0148373, 0.650478) + (0.0200164, 0.686392) + (0.0299671, 0.727997) + (0.04, 0.753176) + (0.0501139, 0.774458) + (0.0698429, 0.800599) + (0.0999065, 0.825129) + (0.15, 0.852995) + (0.2, 0.871143) + (0.301229, 0.897258) + (0.398779, 0.914537) + (0.5, 0.92559) + (0.698881, 0.940554) + (0.999652, 0.954374) + (1.50072, 0.966226) + (2.00603, 0.973845) + (2.95383, 0.981524) + (3.9868, 0.987046) + (4.98026, 0.991486) + (6.85319, 0.995946) + (10, 1) .ENDS 4050THM * *================================================================ * *NDB4060 ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ---------------------- .SUBCKT NDB4060 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.1*{-0.00264*TEMP+1.066}} KP={-0.014*TEMP+6.55} + THETA=0.056 VMAX=1.9E5 LEVEL=3) Cgs 1 3 310p Rd 20 4 7m TC=0.0064 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.0008*TEMP+0.98}} M=0.34 CJO=312p VJ=1.2) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=116m TT=52n) Ra 4 2 31m TC=0.0064 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 600p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=900p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB4060 * *==================================================================== * *NDP4060 ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ---------------------- .SUBCKT NDP4060 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.1*{-0.00264*TEMP+1.066}} KP={-0.014*TEMP+6.55} + THETA=0.056 VMAX=1.9E5 LEVEL=3) Cgs 1 3 310p Rd 20 4 7m TC=0.0064 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.0008*TEMP+0.98}} M=0.34 CJO=312p VJ=1.2) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=116m TT=52n) Ra 4 2 31m TC=0.0064 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 600p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=900p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP4060 * * * NDP4060 THERMAL MODEL * --------------------- .SUBCKT 4060THM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tjc 100 40 VALUE = {V(80,40)*3*V(90,40)}; Tjc=Pave(t)*RJC*rjc(t) R100 100 40 1k R90 90 40 1k E_rjc 90 40 table {TIME} ; Normalized NDP4060 Single Pulsed rjc(t) + (1e-005, 0.0248642) + (1.5e-005, 0.0304524) + (2e-005, 0.0351633) + (3e-005, 0.0430661) + (4e-005, 0.0497285) + (5e-005, 0.0555981) + (7e-005, 0.0657846) + (0.0001, 0.0786276) + (0.00015, 0.0962988) + (0.0002, 0.111196) + (0.0003, 0.136187) + (0.0004, 0.157255) + (0.0005, 0.175817) + (0.0007, 0.208029) + (0.001, 0.248642) + (0.0015, 0.304523) + (0.002, 0.351633) + (0.003, 0.424229) + (0.00400314, 0.475474) + (0.005, 0.510436) + (0.00700608, 0.558074) + (0.0100093, 0.605311) + (0.0148373, 0.650478) + (0.0200164, 0.686392) + (0.0299671, 0.727997) + (0.04, 0.753176) + (0.0501139, 0.774458) + (0.0698429, 0.800599) + (0.0999065, 0.825129) + (0.15, 0.852995) + (0.2, 0.871143) + (0.301229, 0.897258) + (0.398779, 0.914537) + (0.5, 0.92559) + (0.698881, 0.940554) + (0.999652, 0.954374) + (1.50072, 0.966226) + (2.00603, 0.973845) + (2.95383, 0.981524) + (3.9868, 0.987046) + (4.98026, 0.991486) + (6.85319, 0.995946) + (10, 1) .ENDS 4060THM * *================================================================ * * NDP406A ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------ .SUBCKT NDP406A 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.4*{-0.00264*TEMP+1.066}} KP={-0.014*TEMP+6.55} + THETA=0.056 VMAX=1.9E5 LEVEL=3) Cgs 1 3 310p Rd 20 4 7.24m TC=0.0064 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.0008*TEMP+0.98}} M=0.34 CJO=312p VJ=1.2) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=116m TT=52n) Ra 4 2 33m TC=0.0064 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 600p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=900p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP406A * * * THERMAL MODEL OF NDP406A, NDP406AE, NDB406A, NDB406AE * NDP406AL, NDP406AEL, NDB406AL, NDB406AEL * NDP406B, NDP406BE, NDB406B, NDB406BE * NDP406BL, NDP406BEL, NDB406BL, NDB406BEL * --------------------------------------------------------- .SUBCKT 406THMAL 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tjc 100 40 VALUE = {V(80,40)*3*V(90,40)}; Tjc=Pave(t)*RJC*rjc(t) R100 100 40 1k R90 90 40 1k E_rjc 90 40 table {TIME} ; Normalized NDx406x Single Pulsed rjc(t) + (1e-005, 0.0248642) + (1.5e-005, 0.0304524) + (2e-005, 0.0351633) + (3e-005, 0.0430661) + (4e-005, 0.0497285) + (5e-005, 0.0555981) + (7e-005, 0.0657846) + (0.0001, 0.0786276) + (0.00015, 0.0962988) + (0.0002, 0.111196) + (0.0003, 0.136187) + (0.0004, 0.157255) + (0.0005, 0.175817) + (0.0007, 0.208029) + (0.001, 0.248642) + (0.0015, 0.304523) + (0.002, 0.351633) + (0.003, 0.424229) + (0.00400314, 0.475474) + (0.005, 0.510436) + (0.00700608, 0.558074) + (0.0100093, 0.605311) + (0.0148373, 0.650478) + (0.0200164, 0.686392) + (0.0299671, 0.727997) + (0.04, 0.753176) + (0.0501139, 0.774458) + (0.0698429, 0.800599) + (0.0999065, 0.825129) + (0.15, 0.852995) + (0.2, 0.871143) + (0.301229, 0.897258) + (0.398779, 0.914537) + (0.5, 0.92559) + (0.698881, 0.940554) + (0.999652, 0.954374) + (1.50072, 0.966226) + (2.00603, 0.973845) + (2.95383, 0.981524) + (3.9868, 0.987046) + (4.98026, 0.991486) + (6.85319, 0.995946) + (10, 1).ENDS 406THMAL * *======================================================================= * * NDP406AE ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------- .SUBCKT NDP406AE 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.4*{-0.00264*TEMP+1.066}} KP={-0.014*TEMP+6.55} + THETA=0.056 VMAX=1.9E5 LEVEL=3) Cgs 1 3 310p Rd 20 4 7.24m TC=0.0064 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.0008*TEMP+0.98}} M=0.34 CJO=312p VJ=1.2) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=116m TT=52n) Ra 4 2 33m TC=0.0064 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 600p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=900p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP406AE * *======================================================================= * * NDB406A ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------ .SUBCKT NDB406A 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.4*{-0.00264*TEMP+1.066}} KP={-0.014*TEMP+6.55} + THETA=0.056 VMAX=1.9E5 LEVEL=3) Cgs 1 3 310p Rd 20 4 7.24m TC=0.0064 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.0008*TEMP+0.98}} M=0.34 CJO=312p VJ=1.2) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=116m TT=52n) Ra 4 2 33m TC=0.0064 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 600p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=900p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB406A * *======================================================================= * * NDB406AE ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------- .SUBCKT NDB406AE 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.4*{-0.00264*TEMP+1.066}} KP={-0.014*TEMP+6.55} + THETA=0.056 VMAX=1.9E5 LEVEL=3) Cgs 1 3 310p Rd 20 4 7.24m TC=0.0064 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.0008*TEMP+0.98}} M=0.34 CJO=312p VJ=1.2) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=116m TT=52n) Ra 4 2 33m TC=0.0064 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 600p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=900p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB406AE * *======================================================================= * * NDP406AL ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------- .SUBCKT NDP406AL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={1.3*{-0.00264*TEMP+1.066}} KP={-0.017*TEMP+8.925} + THETA=0.086 VMAX=2.2E5 LEVEL=3) Cgs 1 3 500p Rd 20 4 8m TC=0.0072 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.36 CJO=303p VJ=1.18) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=119m TT=53n) Ra 4 2 25.3m TC=0.0072 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.51 CJO=2500p VJ=0.047) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP406AL * *======================================================================= * * NDP406AEL ELECTRICAL MODEL (TO-220 N-Ch DMOS) * -------------------------- .SUBCKT NDP406AEL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={1.3*{-0.00264*TEMP+1.066}} KP={-0.017*TEMP+8.925} + THETA=0.086 VMAX=2.2E5 LEVEL=3) Cgs 1 3 500p Rd 20 4 8m TC=0.0072 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.36 CJO=303p VJ=1.18) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=119m TT=53n) Ra 4 2 25.3m TC=0.0072 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.51 CJO=2500p VJ=0.047) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP406AEL * *======================================================================= * * NDB406AL ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------- .SUBCKT NDB406AL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={1.3*{-0.00264*TEMP+1.066}} KP={-0.017*TEMP+8.925} + THETA=0.086 VMAX=2.2E5 LEVEL=3) Cgs 1 3 500p Rd 20 4 8m TC=0.0072 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.36 CJO=303p VJ=1.18) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=119m TT=53n) Ra 4 2 25.3m TC=0.0072 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.51 CJO=2500p VJ=0.047) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB406AL * *======================================================================= * * NDB406AEL ELECTRICAL MODEL (TO-263 N-Ch DMOS) * -------------------------- .SUBCKT NDB406AEL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={1.3*{-0.00264*TEMP+1.066}} KP={-0.017*TEMP+8.925} + THETA=0.086 VMAX=2.2E5 LEVEL=3) Cgs 1 3 500p Rd 20 4 8m TC=0.0072 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.36 CJO=303p VJ=1.18) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=119m TT=53n) Ra 4 2 25.3m TC=0.0072 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.51 CJO=2500p VJ=0.047) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB406AEL * *======================================================================= * * NDP406B ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------ .SUBCKT NDP406B 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.4*{-0.00264*TEMP+1.066}} KP={-0.014*TEMP+6.55} + THETA=0.056 VMAX=1.9E5 LEVEL=3) Cgs 1 3 310p Rd 20 4 13m TC=0.0064 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.0008*TEMP+0.98}} M=0.34 CJO=312p VJ=1.2) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=116m TT=52n) Ra 4 2 55m TC=0.0064 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 600p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=900p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP406B * *======================================================================= * * NDP406BE ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------- .SUBCKT NDP406BE 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.4*{-0.00264*TEMP+1.066}} KP={-0.014*TEMP+6.55} + THETA=0.056 VMAX=1.9E5 LEVEL=3) Cgs 1 3 310p Rd 20 4 13m TC=0.0064 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.0008*TEMP+0.98}} M=0.34 CJO=312p VJ=1.2) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=116m TT=52n) Ra 4 2 55m TC=0.0064 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 600p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=900p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP406BE * *======================================================================= * * NDB406B ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------ .SUBCKT NDB406B 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.4*{-0.00264*TEMP+1.066}} KP={-0.014*TEMP+6.55} + THETA=0.056 VMAX=1.9E5 LEVEL=3) Cgs 1 3 310p Rd 20 4 13m TC=0.0064 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.0008*TEMP+0.98}} M=0.34 CJO=312p VJ=1.2) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=116m TT=52n) Ra 4 2 55m TC=0.0064 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 600p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=900p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB406B * *======================================================================= * * NDB406BE ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------- .SUBCKT NDB406BE 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.4*{-0.00264*TEMP+1.066}} KP={-0.014*TEMP+6.55} + THETA=0.056 VMAX=1.9E5 LEVEL=3) Cgs 1 3 310p Rd 20 4 13m TC=0.0064 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.0008*TEMP+0.98}} M=0.34 CJO=312p VJ=1.2) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=116m TT=52n) Ra 4 2 55m TC=0.0064 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 600p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=900p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB406BE * *======================================================================= * * NDP406BL ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------- .SUBCKT NDP406BL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={1.3*{-0.00264*TEMP+1.066}} KP={-0.017*TEMP+8.925} + THETA=0.086 VMAX=2.2E5 LEVEL=3) Cgs 1 3 500p Rd 20 4 14m TC=0.0072 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.36 CJO=303p VJ=1.18) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=119m TT=53n) Ra 4 2 47m TC=0.0072 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.51 CJO=2500p VJ=0.047) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP406BL * *======================================================================= * * NDP406BEL ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------- .SUBCKT NDP406BEL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={1.3*{-0.00264*TEMP+1.066}} KP={-0.017*TEMP+8.925} + THETA=0.086 VMAX=2.2E5 LEVEL=3) Cgs 1 3 500p Rd 20 4 14m TC=0.0072 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.36 CJO=303p VJ=1.18) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=119m TT=53n) Ra 4 2 47m TC=0.0072 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.51 CJO=2500p VJ=0.047) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP406BEL * *======================================================================= * * NDB406BL ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------- .SUBCKT NDB406BL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={1.3*{-0.00264*TEMP+1.066}} KP={-0.017*TEMP+8.925} + THETA=0.086 VMAX=2.2E5 LEVEL=3) Cgs 1 3 500p Rd 20 4 14m TC=0.0072 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.36 CJO=303p VJ=1.18) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=119m TT=53n) Ra 4 2 47m TC=0.0072 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.51 CJO=2500p VJ=0.047) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB406BL * *======================================================================= * * NDB406BEL ELECTRICAL MODEL * -------------------------- .SUBCKT NDB406BEL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={1.3*{-0.00264*TEMP+1.066}} KP={-0.017*TEMP+8.925} + THETA=0.086 VMAX=2.2E5 LEVEL=3) Cgs 1 3 500p Rd 20 4 14m TC=0.0072 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.36 CJO=303p VJ=1.18) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=119m TT=53n) Ra 4 2 47m TC=0.0072 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.51 CJO=2500p VJ=0.047) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB406BEL * *======================================================================= * * NDP408A ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------ .SUBCKT NDP408A 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.2*{-0.00216*TEMP+1.054}} KP={-0.014*TEMP+6.55} + THETA=0.056 VMAX=1.5E5 LEVEL=3) Cgs 1 3 340p Rd 20 4 33m TC=0.008 Dds 3 4 DDS .MODEL DDS D(BV={80*{0.00096*TEMP+0.976}} M=0.3 CJO=1142p VJ=0.9) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=20m TT=80n) Ra 4 2 39m TC=0.008 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 600p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=620p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP408A * * * THERMAL MODEL OF NDP408A, NDP408AE, NDB408A, NDB408AE, * NDP408B, NDP408BE, NDB408B, NDB408BE * -------------------------------------------------------- .SUBCKT 408THMAL 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tjc 100 40 VALUE = {V(80,40)*3*V(90,40)}; Tjc=Pave(t)*RJC*rjc(t) R100 100 40 1k R90 90 40 1k E_rjc 90 40 table {TIME} ; Normalized NDx408x Single Pulsed rjc(t) + (1e-005, 0.0248642) + (1.5e-005, 0.0304524) + (2e-005, 0.0351633) + (3e-005, 0.0430661) + (4e-005, 0.0497285) + (5e-005, 0.0555981) + (7e-005, 0.0657846) + (0.0001, 0.0786276) + (0.00015, 0.0962988) + (0.0002, 0.111196) + (0.0003, 0.136187) + (0.0004, 0.157255) + (0.0005, 0.175817) + (0.0007, 0.208029) + (0.001, 0.248642) + (0.0015, 0.304523) + (0.002, 0.351633) + (0.003, 0.424229) + (0.00400314, 0.475474) + (0.005, 0.510436) + (0.00700608, 0.558074) + (0.0100093, 0.605311) + (0.0148373, 0.650478) + (0.0200164, 0.686392) + (0.0299671, 0.727997) + (0.04, 0.753176) + (0.0501139, 0.774458) + (0.0698429, 0.800599) + (0.0999065, 0.825129) + (0.15, 0.852995) + (0.2, 0.871143) + (0.301229, 0.897258) + (0.398779, 0.914537) + (0.5, 0.92559) + (0.698881, 0.940554) + (0.999652, 0.954374) + (1.50072, 0.966226) + (2.00603, 0.973845) + (2.95383, 0.981524) + (3.9868, 0.987046) + (4.98026, 0.991486) + (6.85319, 0.995946) + (10, 1) .ENDS 408THMAL * *======================================================================= * * NDP408AE ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------- .SUBCKT NDP408AE 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.2*{-0.00216*TEMP+1.054}} KP={-0.014*TEMP+6.55} + THETA=0.056 VMAX=1.5E5 LEVEL=3) Cgs 1 3 340p Rd 20 4 33m TC=0.008 Dds 3 4 DDS .MODEL DDS D(BV={80*{0.00096*TEMP+0.976}} M=0.3 CJO=1142p VJ=0.9) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=20m TT=80n) Ra 4 2 39m TC=0.008 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 600p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=620p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP408AE * *======================================================================= * * NDB408A ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------ .SUBCKT NDB408A 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.2*{-0.00216*TEMP+1.054}} KP={-0.014*TEMP+6.55} + THETA=0.056 VMAX=1.5E5 LEVEL=3) Cgs 1 3 340p Rd 20 4 33m TC=0.008 Dds 3 4 DDS .MODEL DDS D(BV={80*{0.00096*TEMP+0.976}} M=0.3 CJO=1142p VJ=0.9) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=20m TT=80n) Ra 4 2 39m TC=0.008 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 600p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=620p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB408A * *======================================================================= * * NDB408AE ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------- .SUBCKT NDB408AE 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.2*{-0.00216*TEMP+1.054}} KP={-0.014*TEMP+6.55} + THETA=0.056 VMAX=1.5E5 LEVEL=3) Cgs 1 3 340p Rd 20 4 33m TC=0.008 Dds 3 4 DDS .MODEL DDS D(BV={80*{0.00096*TEMP+0.976}} M=0.3 CJO=1142p VJ=0.9) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=20m TT=80n) Ra 4 2 39m TC=0.008 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 600p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=620p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB408AE * *======================================================================= * * NDP408B ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------ .SUBCKT NDP408B 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.2*{-0.00216*TEMP+1.054}} KP={-0.014*TEMP+6.55} + THETA=0.056 VMAX=1.5E5 LEVEL=3) Cgs 1 3 340p Rd 20 4 38m TC=0.008 Dds 3 4 DDS .MODEL DDS D(BV={80*{0.00096*TEMP+0.976}} M=0.3 CJO=1142p VJ=0.9) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=20m TT=80n) Ra 4 2 44m TC=0.008 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 600p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=620p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP408B * *======================================================================= * * NDP408BE ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------- .SUBCKT NDP408BE 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.2*{-0.00216*TEMP+1.054}} KP={-0.014*TEMP+6.55} + THETA=0.056 VMAX=1.5E5 LEVEL=3) Cgs 1 3 340p Rd 20 4 38m TC=0.008 Dds 3 4 DDS .MODEL DDS D(BV={80*{0.00096*TEMP+0.976}} M=0.3 CJO=1142p VJ=0.9) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=20m TT=80n) Ra 4 2 44m TC=0.008 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 600p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg.MODEL DGD D(M=0.54 CJO=620p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP408BE * *======================================================================= * * NDB408B ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------ .SUBCKT NDB408B 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.2*{-0.00216*TEMP+1.054}} KP={-0.014*TEMP+6.55} + THETA=0.056 VMAX=1.5E5 LEVEL=3) Cgs 1 3 340p Rd 20 4 38m TC=0.008 Dds 3 4 DDS .MODEL DDS D(BV={80*{0.00096*TEMP+0.976}} M=0.3 CJO=1142p VJ=0.9) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=20m TT=80n) Ra 4 2 44m TC=0.008 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 600p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=620p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB408B * *======================================================================= * * NDB408BE ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------- .SUBCKT NDB408BE 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.2*{-0.00216*TEMP+1.054}} KP={-0.014*TEMP+6.55} + THETA=0.056 VMAX=1.5E5 LEVEL=3) Cgs 1 3 340p Rd 20 4 38m TC=0.008 Dds 3 4 DDS .MODEL DDS D(BV={80*{0.00096*TEMP+0.976}} M=0.3 CJO=1142p VJ=0.9) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=20m TT=80n) Ra 4 2 44m TC=0.008 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 600p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=620p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB408BE * *======================================================================= * * NDP505A ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------ .SUBCKT NDP505A 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.1*{-0.00264*TEMP+1.066}} KP={-0.018*TEMP+10.45} + THETA=0.056 VMAX=1.6E5 LEVEL=3) Cgs 1 3 621p Rd 20 4 6.7m TC=0.00416 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00088*TEMP+0.978}} M=0.33 CJO=459p VJ=1.05) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=70.8m TT=60n) Ra 4 2 13.2m TC=0.00416 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1200p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.53 CJO=1600p VJ=0.23) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP505A * * * THERMAL MODEL OF NDP505A, NDP505AE, NDB505A, NDB505AE, * NDP505AL, NDP505AEL, NDB505AL, NDB505AEL, * NDP505B, NDP505BE, NDB505B, NDB505BE, * NDP505BL, NDP505BEL, NDB505BL, NDB505BEL * --------------------------------------------------------- .SUBCKT 505THMAL 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tjc 100 40 VALUE = {V(80,40)*2.5*V(90,40)}; Tjc=Pave(t)*RJC*rjc(t) R100 100 40 1k R90 90 40 1k E_rjc 90 40 table {TIME} ; Normalized NDx505x Single Pulsed rjc(t) + (0.00001, 0.022853) + (0.000015, 0.02799) + (0.00002, 0.03232) + (0.00003, 0.039583) + (0.00004, 0.045707) + (0.00005, 0.051102) + (0.00007, 0.060465) + (0.0001, 0.072269) + (0.0002, 0.102204) + (0.000299, 0.125874) + (0.0004, 0.145186) + (0.0005, 0.161404) + (0.000698, 0.191381) + (0.001, 0.228536) + (0.0015, 0.279898) + (0.002001, 0.321014) + (0.002995, 0.383532) + (0.004, 0.43045) + (0.005, 0.466497) + (0.007019, 0.518902) + (0.01, 0.567218) + (0.01479, 0.614871) + (0.020815, 0.654644) + (0.030075, 0.693922) + (0.040382, 0.723533) + (0.049664, 0.742936) + (0.069676, 0.774638) + (0.100235, 0.808819) + (0.149725, 0.844508) + (0.199661, 0.869305) + (0.297795, 0.898022) + (0.398993, 0.91482) + (0.499729, 0.925716) + (0.700469, 0.940445) + (0.998995, 0.955408) + (1.5, 0.968511) + (1.99706, 0.975731) + (3, 0.984415) + (4, 0.989822) + (5, 0.992366) + (7, 0.994063) + (10, 1) .ENDS 505THMAL * *======================================================================= * * NDP505AE ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------- .SUBCKT NDP505AE 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.1*{-0.00264*TEMP+1.066}} KP={-0.018*TEMP+10.45} + THETA=0.056 VMAX=1.6E5 LEVEL=3) Cgs 1 3 621p Rd 20 4 6.7m TC=0.00416 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00088*TEMP+0.978}} M=0.33 CJO=459p VJ=1.05) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=70.8m TT=60n) Ra 4 2 13.2m TC=0.00416 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1200p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.53 CJO=1600p VJ=0.23) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP505AE * *======================================================================= * * NDB505A ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------ .SUBCKT NDB505A 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.1*{-0.00232*TEMP+1.058}} KP={-0.018*TEMP+10.45} + THETA=0.056 VMAX=1.6E5 LEVEL=3) Cgs 1 3 621p Rd 20 4 6.7m TC=0.00416 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00088*TEMP+0.978}} M=0.33 CJO=459p VJ=1.05) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=70.8m TT=60n) Ra 4 2 13.2m TC=0.00416 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1200p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.53 CJO=1600p VJ=0.23) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB505A * *======================================================================= * * NDB505AE ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------- .SUBCKT NDB505AE 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.1*{-0.00232*TEMP+1.058}} KP={-0.018*TEMP+10.45} + THETA=0.056 VMAX=1.6E5 LEVEL=3) Cgs 1 3 621p Rd 20 4 6.7m TC=0.00416 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00088*TEMP+0.978}} M=0.33 CJO=459p VJ=1.05) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=70.8m TT=60n) Ra 4 2 13.2m TC=0.00416 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1200p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.53 CJO=1600p VJ=0.23) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB505AE * *======================================================================= * * NDP505AL ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------- .SUBCKT NDP505AL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={1.6*{-0.0032*TEMP+1.08}} KP={-0.025*TEMP+15.125} + THETA=0.086 VMAX=2.1E5 LEVEL=3) Cgs 1 3 734p Rd 20 4 3.5m TC=0.0056 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00088*TEMP+0.978}} M=0.35 CJO=537p VJ=1.16) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=70.8m TT=70n) Ra 4 2 14.9m TC=0.0056 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 2500p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=1600p VJ=0.104) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP505AL * *======================================================================= * * NDP505AEL ELECTRICAL MODEL (TO-220 N-Ch DMOS) * -------------------------- .SUBCKT NDP505AEL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={1.6*{-0.0032*TEMP+1.08}} KP={-0.025*TEMP+15.125} + THETA=0.086 VMAX=2.1E5 LEVEL=3) Cgs 1 3 734p Rd 20 4 3.5m TC=0.0056 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00088*TEMP+0.978}} M=0.35 CJO=537p VJ=1.16) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=70.8m TT=70n) Ra 4 2 14.9m TC=0.0056 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 2500p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=1600p VJ=0.104) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP505AEL * *======================================================================= * * NDB505AL ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------- .SUBCKT NDB505AL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={1.6*{-0.0032*TEMP+1.08}} KP={-0.025*TEMP+15.125} + THETA=0.086 VMAX=2.1E5 LEVEL=3) Cgs 1 3 734p Rd 20 4 3.5m TC=0.0056 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00088*TEMP+0.978}} M=0.35 CJO=537p VJ=1.16) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=70.8m TT=70n) Ra 4 2 14.9m TC=0.0056 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 2500p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=1600p VJ=0.104) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB505AL * *======================================================================= * * NDB505AEL ELECTRICAL MODEL (TO-263 N-Ch DMOS) * -------------------------- .SUBCKT NDB505AEL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={1.6*{-0.0032*TEMP+1.08}} KP={-0.025*TEMP+15.125} + THETA=0.086 VMAX=2.1E5 LEVEL=3) Cgs 1 3 734p Rd 20 4 3.5m TC=0.0056 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00088*TEMP+0.978}} M=0.35 CJO=537p VJ=1.16) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=70.8m TT=70n) Ra 4 2 14.9m TC=0.0056 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 2500p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=1600p VJ=0.104) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB505AEL * *======================================================================= * * NDP505B ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------ .SUBCKT NDP505B 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.1*{-0.00232*TEMP+1.058}} KP={-0.018*TEMP+10.45} + THETA=0.056 VMAX=1.6E5 LEVEL=3) Cgs 1 3 621p Rd 20 4 12m TC=0.00416 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00088*TEMP+0.978}} M=0.33 CJO=459p VJ=1.05) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=70.8m TT=60n) Ra 4 2 18m TC=0.00416 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1200p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.53 CJO=1600p VJ=0.23) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP505B * *======================================================================= * * NDP505BE ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------- .SUBCKT NDP505BE 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.1*{-0.00232*TEMP+1.058}} KP={-0.018*TEMP+10.45} + THETA=0.056 VMAX=1.6E5 LEVEL=3) Cgs 1 3 621p Rd 20 4 12m TC=0.00416 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00088*TEMP+0.978}} M=0.33 CJO=459p VJ=1.05) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=70.8m TT=60n) Ra 4 2 18m TC=0.00416 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1200p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.53 CJO=1600p VJ=0.23) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP505BE * *======================================================================= * * NDB505B ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------ .SUBCKT NDB505B 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.1*{-0.00232*TEMP+1.058}} KP={-0.018*TEMP+10.45} + THETA=0.056 VMAX=1.6E5 LEVEL=3) Cgs 1 3 621p Rd 20 4 12m TC=0.00416 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00088*TEMP+0.978}} M=0.33 CJO=459p VJ=1.05) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=70.8m TT=60n) Ra 4 2 18m TC=0.O0416 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1200p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.53 CJO=1600p VJ=0.23) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB505B * *======================================================================= * * NDB505BE ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------- .SUBCKT NDB505BE 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.1*{-0.00232*TEMP+1.058}} KP={-0.018*TEMP+10.45} + THETA=0.056 VMAX=1.6E5 LEVEL=3) Cgs 1 3 621p Rd 20 4 12m TC=0.00416 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00088*TEMP+0.978}} M=0.33 CJO=459p VJ=1.05) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=70.8m TT=60n) Ra 4 2 18m TC=0.00416 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1200p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.53 CJO=1600p VJ=0.23) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB505BE * *======================================================================= * * NDP505BL ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------- .SUBCKT NDP505BL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={1.6*{-0.0032*TEMP+1.08}} KP={-0.025*TEMP+15.125} + THETA=0.086 VMAX=2.1E5 LEVEL=3) Cgs 1 3 734p Rd 20 4 6m TC=0.0056 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00088*TEMP+0.978}} M=0.35 CJO=537p VJ=1.16) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=70.8m TT=70n) Ra 4 2 22m TC=0.0056 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 2500p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=1600p VJ=0.104) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP505BL * *======================================================================= * * NDP505BEL ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------- .SUBCKT NDP505BEL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={1.6*{-0.0032*TEMP+1.08}} KP={-0.025*TEMP+15.125} + THETA=0.086 VMAX=2.1E5 LEVEL=3) Cgs 1 3 734p Rd 20 4 6m T=0.0056 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00088*TEMP+0.978}} M=0.35 CJO=537p VJ=1.16) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=70.8m TT=70n) Ra 4 2 22m TC=0.0056 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 2500p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=1600p VJ=0.104) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP505BEL * *======================================================================= * * NDB505BL ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------- .SUBCKT NDB505BL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={1.6*{-0.0032*TEMP+1.08}} KP={-0.025*TEMP+15.125} + THETA=0.086 VMAX=2.1E5 LEVEL=3) Cgs 1 3 734p Rd 20 4 6m TC=0.0056 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00088*TEMP+0.978}} M=0.35 CJO=537p VJ=1.16) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=70.8m TT=70n) Ra 4 2 22m TC=0.0056 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 2500p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=1600p VJ=0.104) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB505BL * *======================================================================= * * NDB505BEL ELECTRICAL MODEL (TO-263 N-Ch DMOS) * -------------------------- .SUBCKT NDB505BEL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={1.6*{-0.0032*TEMP+1.08}} KP={-0.025*TEMP+15.125} + THETA=0.086 VMAX=2.1E5 LEVEL=3) Cgs 1 3 734p Rd 20 4 6m TC=0.0056 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00088*TEMP+0.978}} M=0.35 CJO=537p VJ=1.16) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=70.8m TT=70n) Ra 4 2 22m TC=0.0056 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 2500p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=1600p VJ=0.104) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB505BEL * *======================================================================= * * NDP506A ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------ .SUBCKT NDP506A 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.1*{-0.00232*TEMP+1.058}} KP={-0.018*TEMP+10.45} + THETA=0.056 VMAX=1.6E5 LEVEL=3) Cgs 1 3 621p Rd 20 4 6.7m TC=0.00416 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.33 CJO=459p VJ=1.05) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=70.8m TT=60n) Ra 4 2 13.2m TC=0.00416 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1200p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.53 CJO=1600p VJ=0.23) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP506A * * * THERMAL MODEL OF NDP506A, NDP506AE, NDB506A, NDB506AE, * NDP506AL, NDP506AEL, NDB506AL, NDB506AEL, * NDP506B, NDP506BE, NDB506B, NDB506BE, * NDP506BL, NDP506BEL, NDB506BL, NDB506BEL, * --------------------------------------------------------- .SUBCKT 506THMAL 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tjc 100 40 VALUE = {V(80,40)*2.5*V(90,40)}; Tjc=Pave(t)*RJC*rjc(t) R100 100 40 1k R90 90 40 1k E_rjc 90 40 table {TIME} ; Normalized NDx506x Single Pulsed rjc(t) + (0.00001, 0.022853) + (0.000015, 0.02799) + (0.00002, 0.03232) + (0.00003, 0.039583) + (0.00004, 0.045707) + (0.00005, 0.051102) + (0.00007, 0.060465) + (0.0001, 0.072269) + (0.0002, 0.102204) + (0.000299, 0.125874) + (0.0004, 0.145186) + (0.0005, 0.161404) + (0.000698, 0.191381) + (0.001, 0.228536) + (0.0015, 0.279898) + (0.002001, 0.321014) + (0.002995, 0.383532) + (0.004, 0.43045) + (0.005, 0.466497) + (0.007019, 0.518902) + (0.01, 0.567218) + (0.01479, 0.614871) + (0.020815, 0.654644) + (0.030075, 0.693922) + (0.040382, 0.723533) + (0.049664, 0.742936) + (0.069676, 0.774638) + (0.100235, 0.808819) + (0.149725, 0.844508) + (0.199661, 0.869305) + (0.297795, 0.898022) + (0.398993, 0.91482) + (0.499729, 0.925716) + (0.700469, 0.940445) + (0.998995, 0.955408) + (1.5, 0.968511) + (1.99706, 0.975731) + (3, 0.984415) + (4, 0.989822) + (5, 0.992366) + (7, 0.994063) + (10, 1) .ENDS 506THMAL * *======================================================================= * * NDP506AE ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------- .SUBCKT NDP506AE 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.1*{-0.00232*TEMP+1.058}} KP={-0.018*TEMP+10.45} + THETA=0.056 VMAX=1.6E5 LEVEL=3) Cgs 1 3 621p Rd 20 4 6.7m TC=0.00416 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.33 CJO=459p VJ=1.05) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=70.8m TT=60n) Ra 4 2 13.2m TC=0.00416 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1200p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.53 CJO=1600p VJ=0.23) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP506AE * *======================================================================= * * NDB506A ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------ .SUBCKT NDB506A 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.1*{-0.00232*TEMP+1.058}} KP={-0.018*TEMP+10.45} + THETA=0.056 VMAX=1.6E5 LEVEL=3) Cgs 1 3 621p Rd 20 4 6.7m TC=0.00416 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.33 CJO=459p VJ=1.05) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=70.8m TT=60n) Ra 4 2 13.2m TC=0.00416 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1200p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.53 CJO=1600p VJ=0.23) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB506A * *======================================================================= * * NDB506AE ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------- .SUBCKT NDB506AE 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.1*{-0.00232*TEMP+1.058}} KP={-0.018*TEMP+10.45} + THETA=0.056 VMAX=1.6E5 LEVEL=3) Cgs 1 3 621p Rd 20 4 6.7m TC=0.00416 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.33 CJO=459p VJ=1.05) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=70.8m TT=60n) Ra 4 2 13.2m TC=0.O0416 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1200p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.53 CJO=1600p VJ=0.23) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB506AE * *======================================================================= * * NDP506AL ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------- .SUBCKT NDP506AL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={1.6*{-0.0032*TEMP+1.08}} KP={-0.025*TEMP+15.125} + THETA=0.086 VMAX=2.1E5 LEVEL=3) Cgs 1 3 734p Rd 20 4 3.5m TC=0.0056 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.35 CJO=537p VJ=1.16) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=70.8m TT=70n) Ra 4 2 14.9m TC=0.0056 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 2500p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=1600p VJ=0.104) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP506AL * *======================================================================= * * NDP506AEL ELECTRICAL MODEL (TO-220 N-Ch DMOS) * -------------------------- .SUBCKT NDP506AEL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={1.6*{-0.0032*TEMP+1.08}} KP={-0.025*TEMP+15.125} + THETA=0.086 VMAX=2.1E5 LEVEL=3) Cgs 1 3 734p Rd 20 4 3.5m TC=0.0056 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.35 CJO=537p VJ=1.16) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=70.8m TT=70n) Ra 4 2 14.9m TC=0.0056 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 2500p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=1600p VJ=0.104) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP506AEL * *======================================================================= * * NDB506AL ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------- .SUBCKT NDB506AL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={1.6*{-0.0032*TEMP+1.08}} KP={-0.025*TEMP+15.125} + THETA=0.086 VMAX=2.1E5 LEVEL=3) Cgs 1 3 734p Rd 20 4 3.5m TC=0.0056 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.35 CJO=537p VJ=1.16) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=70.8m TT=70n) Ra 4 2 14.9m TC=0.0056 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 2500p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=1600p VJ=0.104) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB506AL * *======================================================================= * * NDB506AEL ELECTRICAL MODEL (TO-263 N-Ch DMOS) * -------------------------- .SUBCKT NDB506AEL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={1.6*{-0.0032*TEMP+1.08}} KP={-0.025*TEMP+15.125} + THETA=0.086 VMAX=2.1E5 LEVEL=3) Cgs 1 3 734p Rd 20 4 3.5m TC=0.0056 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.35 CJO=537p VJ=1.16) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=70.8m TT=70n) Ra 4 2 14.9m TC=0.0056 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 2500p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=1600p VJ=0.104) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB506AEL * *======================================================================= * * NDP506B ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------ .SUBCKT NDP506B 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.1*{-0.00232*TEMP+1.058}} KP={-0.018*TEMP+10.45} + THETA=0.056 VMAX=1.6E5 LEVEL=3) Cgs 1 3 621p Rd 20 4 12m TC=0.00416 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.33 CJO=459p VJ=1.05) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=70.8m TT=60n) Ra 4 2 18m TC=0.00416 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1200p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.53 CJO=1600p VJ=0.23) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP506B * *======================================================================= * * NDP506BE ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------- .SUBCKT NDP506BE 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.1*{-0.00232*TEMP+1.058}} KP={-0.018*TEMP+10.45} + THETA=0.056 VMAX=1.6E5 LEVEL=3) Cgs 1 3 621p Rd 20 4 12m TC=0.00416 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.33 CJO=459p VJ=1.05) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=70.8m TT=60n) Ra 4 2 18m TC=0.00416 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1200p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.53 CJO=1600p VJ=0.23) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP506BE * *======================================================================= * * NDB506B ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------ .SUBCKT NDB506B 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.1*{-0.00232*TEMP+1.058}} KP={-0.018*TEMP+10.45} + THETA=0.056 VMAX=1.6E5 LEVEL=3) Cgs 1 3 621p Rd 20 4 12m TC=0.00416 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.33 CJO=459p VJ=1.05) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=70.8m TT=60n) Ra 4 2 18m TC=0.00416 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1200p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.53 CJO=1600p VJ=0.23) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB506B * *======================================================================= * * NDB506BE ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------- .SUBCKT NDB506BE 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.1*{-0.00232*TEMP+1.058}} KP={-0.018*TEMP+10.45} + THETA=0.056 VMAX=1.6E5 LEVEL=3) Cgs 1 3 621p Rd 20 4 12m TC=0.00416 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.33 CJO=459p VJ=1.05) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=70.8m TT=60n) Ra 4 2 18m TC=0.00416 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1200p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.53 CJO=1600p VJ=0.23) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB506BE * *======================================================================= * * NDP506BL ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------- .SUBCKT NDP506BL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={1.6*{-0.0032*TEMP+1.08}} KP={-0.025*TEMP+15.125} + THETA=0.086 VMAX=2.1E5 LEVEL=3) Cgs 1 3 734p Rd 20 4 6m TC=0.0056 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.35 CJO=537p VJ=1.16) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=70.8m TT=70n) Ra 4 2 22m TC=0.0056 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 2500p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=1600p VJ=0.104) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP506BL * *======================================================================= * * NDP506BEL ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------- .SUBCKT NDP506BEL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={1.6*{-0.0032*TEMP+1.08}} KP={-0.025*TEMP+15.125} + THETA=0.086 VMAX=2.1E5 LEVEL=3) Cgs 1 3 734p Rd 20 4 6m TC=0.0056 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.35 CJO=537p VJ=1.16) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=70.8m TT=70n) Ra 4 2 22m TC=0.0056 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 2500p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=1600p VJ=0.104) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP506BEL * *======================================================================= * * NDB506BL ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------- .SUBCKT NDB506BL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={1.6*{-0.0032*TEMP+1.08}} KP={-0.025*TEMP+15.125} + THETA=0.086 VMAX=2.1E5 LEVEL=3) Cgs 1 3 734p Rd 20 4 6m TC=0.0056 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.35 CJO=537p VJ=1.16) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=70.8m TT=70n) Ra 4 2 22m TC=0.0056 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 2500p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=1600p VJ=0.104) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB506BL * *======================================================================= * * NDB506BEL ELECTRICAL MODEL (TO-263 N-Ch DMOS) * -------------------------- .SUBCKT NDB506BEL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={1.6*{-0.0032*TEMP+1.08}} KP={-0.025*TEMP+15.125} + THETA=0.086 VMAX=2.1E5 LEVEL=3) Cgs 1 3 734p Rd 20 4 6m TC=0.0056 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.35 CJO=537p VJ=1.16) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=70.8m TT=70n) Ra 4 2 22m TC=0.0056 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 2500p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=1600p VJ=0.104) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB506BEL * *======================================================================= * NDB5060 ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------ .SUBCKT NDB5060 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.1*{-0.00232*TEMP+1.058}} KP={-0.018*TEMP+10.45} + THETA=0.056 VMAX=1.6E5 LEVEL=3) Cgs 1 3 621p Rd 20 4 6.7m TC=0.00416 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.33 CJO=459p VJ=1.05) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=70.8m TT=60n) Ra 4 2 13.2m TC=0.00416 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1200p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.53 CJO=1600p VJ=0.23) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB5060 * .SUBCKT 5060THM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tjc 100 40 VALUE = {V(80,40)*55*V(90,40)}; Tja=Pave(t)*RJA*rja(t) R100 100 40 1k R90 90 40 1k E_rjc 90 40 table {TIME} ;Normalized NDx5060 Single Pulsed rja(t) at standard size 2oz cu + ( 0.0001 , 0.000735429306857878287 ) + ( 0.0002 , 0.00165471594043022614 ) + ( 0.0003 , 0.00239014524728810443 ) + ( 0.0004 , 0.00312557455414598272 ) + ( 0.0005 , 0.003861003861003861 ) + ( 0.0006 , 0.00441257584114726972 ) + ( 0.0007 , 0.00496414782129067843 ) + ( 0.0008 , 0.00551571980143408715 ) + ( 0.0009 , 0.00606729178157749586 ) + ( 0.001 , 0.00753815039529325244 ) + ( 0.002 , 0.0110314396028681743 ) + ( 0.003 , 0.0134215848501562787 ) + ( 0.004 , 0.0152601581173009744 ) + ( 0.005 , 0.016731016731016731 ) + ( 0.006 , 0.0178341606913035484 ) + ( 0.007 , 0.0187534473248758963 ) + ( 0.008 , 0.0194888766317337746 ) + ( 0.009 , 0.0200404486118771833 ) + ( 0.01 , 0.0207758779187350616 ) + ( 0.02 , 0.0229821658393086965 ) + ( 0.03 , 0.0250045964331678617 ) + ( 0.04 , 0.0262915977201691487 ) + ( 0.05 , 0.0273947416804559662 ) + ( 0.06 , 0.0284978856407427836 ) + ( 0.07 , 0.0290494576208861923 ) + ( 0.08 , 0.0297848869277440706 ) + ( 0.09 , 0.0305203162346019489 ) + ( 0.1 , 0.0312557455414598272 ) + ( 0.2 , 0.0358521787093215665 ) + ( 0.3 , 0.0410001838573267145 ) + ( 0.4 , 0.0443096157381871668 ) + ( 0.5 , 0.0485383342526199669 ) + ( 0.6 , 0.0525831954403382975 ) + ( 0.7 , 0.0560764846479132193 ) + ( 0.8 , 0.0601213458356315499 ) + ( 0.9 , 0.0634307777164920022 ) + ( 1 , 0.0685787828644971502 ) + ( 2 , 0.0968928111785254643 ) + ( 3 , 0.120426548997977569 ) + ( 4 , 0.142121713550284979 ) + ( 5 , 0.160507446221731936 ) + ( 6 , 0.175583747012318441 ) + ( 7 , 0.192130906416620702 ) + ( 8 , 0.207207207207207207 ) + ( 9 , 0.222283507997793712 ) + ( 10 , 0.242323956609670895 ) + ( 20 , 0.356499356499356499 ) + ( 30 , 0.448428019856591285 ) + ( 40 , 0.526567383710240853 ) + ( 50 , 0.590549733406876264 ) + ( 60 , 0.643500643500643501 ) + ( 70 , 0.693693693693693694 ) + ( 80 , 0.735429306857878287 ) + ( 90 , 0.766133480419194705 ) + ( 100 , 0.810626953484096341 ) + ( 200 , 0.955506526935098364 ) + ( 300 , 1 ) .ENDS 5060THM *======================================================================= * * NDP508A ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------ .SUBCKT NDP508A 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.3*{-0.0024*TEMP+1.06}} KP={-0.017*TEMP+10.925} + THETA=0.056 VMAX=2E5 LEVEL=3) Cgs 1 3 650p Rd 20 4 18m TC=0.008 Dds 3 4 DDS .MODEL DDS D(BV={80*{0.00088*TEMP+0.976}} M=0.39 CJO=489p VJ=0.8) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=34.7m TT=52n) Ra 4 2 19m TC=0.008 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.58 CJO=2500p VJ=0.1046) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP508A * * THERMAL MODEL OF NDP508A, NDP508AE, NDB508A, NDB508AE, * NDP508B, NDP508BE, NDB508B, NDB508BE * -------------------------------------------------------- .SUBCKT 508THMAL 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tjc 100 40 VALUE={V(80,40)*2.5*V(90,40)}; Tjc=Pave(t)*RJC*rjc(t) R100 100 40 1k R90 90 40 1k E_rjc 90 40 table {TIME} ; Normalized NDx508x Single Pulsed rjc(t) + (0.00001, 0.022853) + (0.000015, 0.02799) + (0.00002, 0.03232) + (0.00003, 0.039583) + (0.00004, 0.045707) + (0.00005, 0.051102) + (0.00007, 0.060465) + (0.0001, 0.072269) + (0.0002, 0.102204) + (0.000299, 0.125874) + (0.0004, 0.145186) + (0.0005, 0.161404) + (0.000698, 0.191381) + (0.001, 0.228536) + (0.0015, 0.279898) + (0.002001, 0.321014) + (0.002995, 0.383532) + (0.004, 0.43045) + (0.005, 0.466497) + (0.007019, 0.518902) + (0.01, 0.567218) + (0.01479, 0.614871) + (0.020815, 0.654644) + (0.030075, 0.693922) + (0.040382, 0.723533) + (0.049664, 0.742936) + (0.069676, 0.774638) + (0.100235, 0.808819) + (0.149725, 0.844508) + (0.199661, 0.869305) + (0.297795, 0.898022) + (0.398993, 0.91482) + (0.499729, 0.925716) + (0.700469, 0.940445) + (0.998995, 0.955408) + (1.5, 0.968511) + (1.99706, 0.975731) + (3, 0.984415) + (4, 0.989822) + (5, 0.992366) + (7, 0.994063) + (10, 1) .ENDS 508THMAL * *======================================================================= * * NDP508AE ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------- .SUBCKT NDP508AE 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.3*{-0.0024*TEMP+1.06}} KP={-0.017*TEMP+10.925} + THETA=0.056 VMAX=2E5 LEVEL=3) Cgs 1 3 650p Rd 20 4 18m TC=0.008 Dds 3 4 DDS .MODEL DDS D(BV={80*{0.00096*TEMP+0.976}} M=0.39 CJO=489p VJ=0.8) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=34.7m TT=52n) Ra 4 2 19m TC=0.008 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.58 CJO=2500p VJ=0.1046) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP508AE * *======================================================================= * * NDB508A ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------ .SUBCKT NDB508A 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.3*{-0.0024*TEMP+1.06}} KP={-0.017*TEMP+10.925} + THETA=0.056 VMAX=2E5 LEVEL=3) Cgs 1 3 650p Rd 20 4 18m TC=0.008 Dds 3 4 DDS .MODEL DDS D(BV={80*{0.00096*TEMP+0.976}} M=0.39 CJO=489p VJ=0.8) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=34.7m TT=52n) Ra 4 2 19m TC=0.O08 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.58 CJO=2500p VJ=0.1046) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB508A * *======================================================================= * * NDB508AE ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------- .SUBCKT NDB508AE 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.3*{-0.0024*TEMP+1.06}} KP={-0.017*TEMP+10.925} + THETA=0.056 VMAX=2E5 LEVEL=3) Cgs 1 3 650p Rd 20 4 18m TC=0.008 Dds 3 4 DDS .MODEL DDS D(BV={80*{0.00096*TEMP+0.976}} M=0.39 CJO=489p VJ=0.8) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=34.7m TT=52n) Ra 4 2 19m TC=0.008 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.58 CJO=2500p VJ=0.1046) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB508AE * *======================================================================= * * NDP508B ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------ .SUBCKT NDP508B 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.3*{-0.0024*TEMP+1.06}} KP={-0.017*TEMP+10.925} + THETA=0.056 VMAX=2E5 LEVEL=3) Cgs 1 3 650p Rd 20 4 23m TC=0.008 Dds 3 4 DDS .MODEL DDS D(BV={80*{0.00096*TEMP+0.976}} M=0.39 CJO=489p VJ=0.8) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=34.7m TT=52n) Ra 4 2 24m TC=0.008 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.58 CJO=2500p VJ=0.1046) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP508B * *======================================================================= * * NDP508BE ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------- .SUBCKT NDP508BE 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.3*{-0.0024*TEMP+1.06}} KP={-0.017*TEMP+10.925} + THETA=0.056 VMAX=2E5 LEVEL=3) Cgs 1 3 650p Rd 20 4 23m TC=0.008 Dds 3 4 DDS .MODEL DDS D(BV={80*{0.00096*TEMP+0.976}} M=0.39 CJO=489p VJ=0.8) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=34.7m TT=52n) Ra 4 2 24m T=0.008 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.58 CJO=2500p VJ=0.1046) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP508BE * *======================================================================= * * NDB508B ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------ .SUBCKT NDB508B 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.3*{-0.0024*TEMP+1.06}} KP={-0.017*TEMP+10.925} + THETA=0.056 VMAX=2E5 LEVEL=3) Cgs 1 3 650p Rd 20 4 23m TC=0.008 Dds 3 4 DDS .MODEL DDS D(BV={80*{0.00096*TEMP+0.976}} M=0.39 CJO=489p VJ=0.8) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=34.7m TT=52n) Ra 4 2 24m TC=0.008 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.58 CJO=2500p VJ=0.1046) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB508B * *======================================================================= * * NDB508BE ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------- .SUBCKT NDB508BE 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.3*{-0.0024*TEMP+1.06}} KP={-0.017*TEMP+10.925} + THETA=0.056 VMAX=2E5 LEVEL=3) Cgs 1 3 650p Rd 20 4 23m TC=0.008 Dds 3 4 DDS .MODEL DDS D(BV={80*{0.00096*TEMP+0.976}} M=0.39 CJO=489p VJ=0.8) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=34.7m TT=52n) Ra 4 2 24m TC=0.008 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.58 CJO=2500p VJ=0.1046) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB508BE * *======================================================================= * *NDP603AL ELECTRICAL MODEL * ---------------------- .SUBCKT NDP603AL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.8*{-0.00336*TEMP+1.084}} KP={-0.03*TEMP+18.75} + THETA=0.086 VMAX=1.4E5 LEVEL=3) Cgs 1 3 800p Rd 20 4 2m TC=0.00424 Dds 3 4 DDS .MODEL DDS D(BV={30*{0.00068*TEMP+0.983}} M=0.377 CJO=1083p VJ=1.22) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=37.9m TT=55n) Ra 4 2 7m TC=0.00424 Rs 3 5 1m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1700p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.5 CJO=1700p VJ=0.193) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP603AL * * * THERMAL MODEL OF NDP603AL, NDB603AL * ------------------------------------ .SUBCKT 603ALTHM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tjc 100 40 VALUE = {V(80,40)*3*V(90,40)}; Tja=Pave(t)*RJA*rja(t) R100 100 40 1k ; where RJA=35 deg/W R90 90 40 1k E_rjc 90 40 table {TIME} ; Normalized NDP603AL Single Pulsed rjc(t) + (0.00001, 0.022853) + (0.000015, 0.02799) + (0.00002, 0.03232) + (0.00003, 0.039583) + (0.00004, 0.045707) + (0.00005, 0.051102) + (0.00007, 0.060465) + (0.0001, 0.072269) + (0.0002, 0.102204) + (0.000299, 0.125874) + (0.0004, 0.145186) + (0.0005, 0.161404) + (0.000698, 0.191381) + (0.001, 0.228536) + (0.0015, 0.279898) + (0.002001, 0.321014) + (0.002995, 0.383532) + (0.004, 0.43045) + (0.005, 0.466497) + (0.007019, 0.518902) + (0.01, 0.567218) + (0.01479, 0.614871) + (0.020815, 0.654644) + (0.030075, 0.693922) + (0.040382, 0.723533) + (0.049664, 0.742936) + (0.069676, 0.774638) + (0.100235, 0.808819) + (0.149725, 0.844508) + (0.199661, 0.869305) + (0.297795, 0.898022) + (0.398993, 0.91482) + (0.499729, 0.925716) + (0.700469, 0.940445) + (0.998995, 0.955408) + (1.5, 0.968511) + (1.99706, 0.975731) + (3, 0.984415) + (4, 0.989822) + (5, 0.992366) + (7, 0.994063) + (10, 1) .ENDS 603ALTHM * *======================================================================= * * NDP605A ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------ .SUBCKT NDP605A 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={3.4*{-0.00264*TEMP+1.066}} KP={-0.03*TEMP+20.25} + THETA=0.056 VMAX=1.4E5 LEVEL=3) Cgs 1 3 1154p Rd 20 4 2.65m TC=0.0065 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00088*TEMP+0.978}} M=0.377 CJO=1083p VJ=1.22) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=37.9m TT=55n) Ra 4 2 8.33m TC=0.0065 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 2100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.5 CJO=2653p VJ=0.193) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP605A * * * THERMAL MODEL OF NDP605A, NDP605AE, NDB605A, NDB605AE, * NDP605AL, NDP605AEL, NDB605AL, NDB605AEL, * NDP605B, NDP605BE, NDB605A, NDB605AE, * NDP605BL, NDP605BEL, NDB605BL, NDB605BEL * --------------------------------------------------------- .SUBCKT 605THMAL 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tjc 100 40 VALUE={V(80,40)*1.5*V(90,40)}; Tjc=Pave(t)*RJC*rjc(t) R100 100 40 1k R90 90 40 1k E_rjc 90 40 table {TIME} ; Normalized NDx605x Single Pulsed rjc(t) + (1e-005, 0.0156008) + (1.5e-005, 0.019107) + (2e-005, 0.0220629) + (3e-005, 0.0270214) + (4e-005, 0.0312016) + (5e-005, 0.0348845) + (7e-005, 0.0412759) + (0.0001, 0.0493341) + (0.00015, 0.0604217) + (0.0002, 0.069769) + (0.0003, 0.0854492) + (0.0004, 0.0986682) + (0.0005, 0.110314) + (0.0007, 0.130526) + (0.001, 0.156008) + (0.0015, 0.19107) + (0.002, 0.220629) + (0.00300068, 0.269488) + (0.004, 0.30695) + (0.00500875, 0.338816) + (0.007, 0.38417) + (0.0100302, 0.427714) + (0.015, 0.476191) + (0.0201171, 0.51115) + (0.0302385, 0.557729) + (0.0401603, 0.588408) + (0.0499347, 0.613516) + (0.0701816, 0.651838) + (0.0993117, 0.689666) + (0.150433, 0.734277) + (0.2, 0.766409) + (0.3, 0.814672) + (0.4, 0.848456) + (0.499014, 0.871326) + (0.694928, 0.901643) + (1, 0.929537) + (1.50854, 0.955371) + (1.99969, 0.970572) + (3.0122