ࡱ>  ܥhW e<s 9jjjjjj<  E  F  LU L  X\  j & jj ^jj FB!Fj~( jjjj 7 FAIRCHILD SEMICONDUCTOR DMOS LIBRARY ver1.6 Feb 1997 * *********************************** * *======================================================================= * * 2N7000 ELECTRICAL MODEL (SOT-23 Single N-Ch DMOS) * ----------------------- .SUBCKT 2N7000 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={2.1*{-0.0016*TEMP+1.04}} KP=0.35 THETA=0.086 + VMAX=2.2E5 LEVEL=3) Cgs 1 3 60p Rd 20 4 0.3 TC=0.0075 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00072*TEMP+0.982}} M=0.36 CJO=23p VJ=0.8) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=40m TT=100n) Ra 4 2 0.4 TC=0.0075 Rs 3 5 10m Ls 5 30 .5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 85p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.53 CJO=85p VJ=0.12) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS 2N7000 * * 2N7000 THERMAL MODEL * --------------------- .SUBCKT 2N7000THM 50 40 100 Rop 50 60 1meg Cop 60 70 1u IC=0 E_W 40 70 40 60 1meg E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*250*V(90,40)} R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized 2N7000 Single Pulsed rja(t) +( 0.0001 ,0.001402 ) +(0.000872 , 0.0085 ) +(0.009476 ,0.057119 ) +( 0.05 ,0.146823 ) +( 0.1 ,0.205168 ) +( 0.2 ,0.279125 ) +( 0.5 ,0.401537 ) +( 1 ,0.495428 ) +( 2 ,0.576191 ) +( 5 ,0.669571 ) +( 10.683 ,0.741601 ) +( 21.2997 ,0.810463 ) +( 50 ,0.895578 ) +( 100 ,0.953184 ) +( 156.877 ,0.975353 ) +( 216.442 ,0.979892 ) .ENDS 2N7000THM *======================================================================= * * 2N7002 ELECTRICAL MODEL (SOT-23 Single N-Ch DMOS) * ----------------------- .SUBCKT 2N7002 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={2.1*{-0.0016*TEMP+1.04}} KP=0.35 THETA=0.086 + VMAX=2.2E5 LEVEL=3) Cgs 1 3 60p Rd 20 4 0.3 TC=0.0075 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00072*TEMP+0.982}} M=0.36 CJO=23p VJ=0.8) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=40m TT=100n) Ra 4 2 0.4 TC=0.0075 Rs 3 5 10m Ls 5 30 .5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 85p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.53 CJO=85p VJ=0.12) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS 2N7002 * * 2N7002 THERMAL MODEL * --------------------- .SUBCKT 2N7002THM 50 40 100 Rop 50 60 1meg Cop 60 70 1u IC=0 E_W 40 70 40 60 1meg E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*250*V(90,40)} R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized 2N7002 Single Pulsed rja(t) +( 0.0001 ,0.001402 ) +(0.000872 , 0.0085 ) +(0.009476 ,0.057119 ) +( 0.05 ,0.146823 ) +( 0.1 ,0.205168 ) +( 0.2 ,0.279125 ) +( 0.5 ,0.401537 ) +( 1 ,0.495428 ) +( 2 ,0.576191 ) +( 5 ,0.669571 ) +( 10.683 ,0.741601 ) +( 21.2997 ,0.810463 ) +( 50 ,0.895578 ) +( 100 ,0.953184 ) +( 156.877 ,0.975353 ) +( 216.442 ,0.979892 ) .ENDS 2N7002THM * BSS123 ELECTRICAL MODEL (SOT-23 Single N-Ch DMOS) *----------------------- .SUBCKT BSS123 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.3*{-0.00184*TEMP+1.046}} KP={-0.0012*TEMP+0.6} + THETA=0.086 VMAX=2.2E5 LEVEL=3) Cgs 1 3 50p Rd 20 4 1.3 TC=0.00864 Dds 3 4 DDS .MODEL DDS D(BV={100*{0.0008*TEMP+0.98}} M=0.36 CJO=23p VJ=0.8) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=40m TT=100n) Ra 4 2 1.3 TC=0.00864 Rs 3 5 10m Ls 5 30 .5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 70p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.3 CJO=20p VJ=0.4) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS BSS123 * *======================================================================= * *BSS138 ELECTRICAL MODEL (SOT-23 Single N-Ch DMOS) *----------------------- .SUBCKT BSS138 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.3*{-0.002*TEMP+1.05}} KP={-0.0014*TEMP+0.685} + THETA=0.086 VMAX=2.2E5 LEVEL=3) Cgs 1 3 40p Rd 20 4 0.2 TC=0.0065 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00084*TEMP+0.979}} M=0.36 CJO=23p VJ=0.8) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=40m TT=100n) Ra 4 2 0.3 TC=0.0065 Rs 3 5 10m Ls 5 30 .5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 68p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.3 CJO=68p VJ=0.4) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS BSS138 * *======================================================================= * FDS6680 PRELIMINARY ELECTRICAL MODEL (SO-8 Single N-Ch DMOS) * ------------------------------------------------------------ .SUBCKT FDS6680 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={2.5*{-0.00384*TEMP+1.096}} KP={-0.05*TEMP+43} + THETA=0.096 VMAX=4E5 LEVEL=3) Cgs 1 3 1700p Rd 20 4 1m TC=0.00376 Dds 3 4 DDS .MODEL DDS D(BV={30*{0.00088*TEMP+0.978}} M=0.3 CJO=800p VJ=0.8) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=40m TT=100n) Ra 4 2 2m TC=0.00376 Rs 3 5 0.5m Ls 5 30 0.5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1300p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.5 CJO=1300p VJ=0.15) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS FDS6680 * * FDS6680 THERMAL MODEL * --------------------- .SUBCKT 6680THM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*105*V(90,40)}; Tja=Pave(t)*RJA*rja(t) R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized FDS6680 Single Pulse rja(t) + (0.0001, 0.002232) + (0.0002, 0.003156) + (0.0005, 0.00499) + (0.001, 0.007057) + (0.002, 0.00998) + (0.005, 0.01578) + (0.01, 0.022316) + (0.02, 0.03156) + (0.05, 0.049901) + (0.1, 0.070571) + (0.2, 0.099802) + (0.5, 0.157801) + (1, 0.223165) + (2, 0.304706) + (5, 0.430226) + (10, 0.532168) + (20, 0.641667) + (50, 0.789139) + (100, 0.876999) + (200, 0.940897) + (500, 1) + (999, 1) .ENDS 6680THM * *Fairchild Discretes Power & Signal Technolgies June 97 Rev.A *======================================================================= * FDV301N ELECTRICAL MODEL (SOT-23 Single N-Ch DMOS) * ----------------------- .SUBCKT FDV301N 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={0.9*(-0.00232*TEMP+1.058)} KP={-0.0005*TEMP+0.32} THETA=0.096 + VMAX=3.8E5 LEVEL=3) Cgs 1 3 90p Rd 20 4 .7 TC=0.006 Dds 3 4 DDS .MODEL DDS D(BV={25*(0.001*TEMP+0.975)} M=0.36 CJO=23p VJ=0.8) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=40m TT=100n) Ra 4 2 .7 TC=0.006 Rs 3 5 10m Ls 5 30 .7n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 25p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.53 CJO=25p VJ=0.12) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS FDV301N * * FDV301N THERMAL MODEL * --------------------- .SUBCKT 301NTHM 50 40 100 Rop 50 60 1meg Cop 60 70 1u IC=0 E_W 40 70 40 60 1meg E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*357*V(90,40)} R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized SOT-23 Single Pulsed rja(t) +( 0.0001 ,0.001402 ) +(0.000872 , 0.0085 ) +(0.009476 ,0.057119 ) +( 0.05 ,0.146823 ) +( 0.1 ,0.205168 ) +( 0.2 ,0.279125 ) +( 0.5 ,0.401537 ) +( 1 ,0.495428 ) +( 2 ,0.576191 ) +( 5 ,0.669571 ) +( 10.683 ,0.741601 ) +( 21.2997 ,0.810463 ) +( 50 ,0.895578 ) +( 100 ,0.953184 ) +( 156.877 ,0.975353 ) +( 216.442 ,0.979892 ) .ENDS 301NTHM *======================================================================= * FDV304P PRELIMINARY ELECTRICAL MODEL (SOT-23 Single P-Ch DMOS) * ------------------------ .SUBCKT FDV304P 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS PMOS (VTO={-0.8*(-0.00232*TEMP+1.058)} KP={-0.0009*TEMP+0.8225} + THETA=0.096 VMAX=3.8E5 LEVEL=3) Cgs 1 3 130p Rd 20 4 0.25 TC=0.004 Dds 4 3 DDS .MODEL DDS D(BV={25*(0.00088*TEMP+0.978)} M=0.35 CJO=100p VJ=1.0) Dbody 20 3 DBODY .MODEL DBODY D(IS=1E-12 N=1 RS=12.7m TT=25n) Ra 4 2 0.25 TC=0.004 Rs 3 5 10m Ls 5 30 0.5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER PMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 110p Rcgd 7 4 10meg Dgd 4 6 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.55 CJO=110p VJ=0.120) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS FDV304P * * FDV304P THERMAL MODEL * --------------------- .SUBCKT 304PTHM 50 40 100 Rop 50 60 1meg Cop 60 70 1u IC=0 E_W 40 70 40 60 1meg E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*357*V(90,40)} R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized SOT-23 Single Pulsed rja(t) +( 0.0001 ,0.001402 ) +(0.000872 , 0.0085 ) +(0.009476 ,0.057119 ) +( 0.05 ,0.146823 ) +( 0.1 ,0.205168 ) +( 0.2 ,0.279125 ) +( 0.5 ,0.401537 ) +( 1 ,0.495428 ) +( 2 ,0.576191 ) +( 5 ,0.669571 ) +( 10.683 ,0.741601 ) +( 21.2997 ,0.810463 ) +( 50 ,0.895578 ) +( 100 ,0.953184 ) +( 156.877 ,0.975353 ) +( 216.442 ,0.979892 ) .ENDS 304PTHM *======================================================================= *FDP7030L ELECTRICAL MODEL * ------------------------ .SUBCKT FDP7030L 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO=2 KP=65 THETA=0.086 VMAX=1.4E5 LEVEL=3) Cgs 1 3 1800p Rd 20 4 1.5m TC=0.0044 Dds 3 4 DDS .MODEL DDS D(BV={30*{0.00144*TEMP+0.964}} M=0.377 CJO=1083p VJ=1.22) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=37.9m TT=55n) Ra 4 2 1.5m TC=0.0044 Rs 3 5 0.2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 4000p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.5 CJO=4000p VJ=0.193) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS FDP7030L * .SUBCKT 7030LTHM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tjc 100 40 VALUE = {V(80,40)*1.2*V(90,40)}; Tja=Pave(t)*RJC*rjc(t) R100 100 40 1k ; where RJC=1.2 deg/W R90 90 40 1k E_rjc 90 40 table {TIME} ; Normalized FDP7030L Single Pulsed rjc(t) + (1e-005, 0.0156008) + (1.5e-005, 0.019107) + (2e-005, 0.0220629) + (3e-005, 0.0270214) + (4e-005, 0.0312016) + (5e-005, 0.0348845) + (7e-005, 0.0412759) + (0.0001, 0.0493341) + (0.00015, 0.0604217) + (0.0002, 0.069769) + (0.0003, 0.0854492) + (0.0004, 0.0986682) + (0.0005, 0.110314) + (0.0007, 0.130526) + (0.001, 0.156008) + (0.0015, 0.19107) + (0.002, 0.220629) + (0.00300068, 0.269488) + (0.004, 0.30695) + (0.00500875, 0.338816) + (0.007, 0.38417) + (0.0100302, 0.427714) + (0.015, 0.476191) + (0.0201171, 0.51115) + (0.0302385, 0.557729) + (0.0401603, 0.588408) + (0.0499347, 0.613516) + (0.0701816, 0.651838) + (0.0993117, 0.689666) + (0.150433, 0.734277) + (0.2, 0.766409) + (0.3, 0.814672) + (0.4, 0.848456) + (0.499014, 0.871326) + (0.694928, 0.901643) + (1, 0.929537) + (1.50854, 0.955371) + (1.99969, 0.970572) + (3.01226, 0.986282) + (4, 0.994209) + (4.98949, 0.997334) + (6.99375, 0.99942) + (10.009, 0.99942) .ENDS 7030LTHM *======================================================================= * FDC6322C ELECTRICAL MODEL (PRELIMINARY) (SuperSOT-6 Complementary N-Ch DMOS) * -------------------------------------------------------------- .SUBCKT FDC6322CN 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={0.9*(-0.00232*TEMP+1.058)} KP={-0.0005*TEMP+0.32} THETA=0.096 + VMAX=VMAX=3.8E5 LEVEL=3) Cgs 1 3 90p Rd 20 4 .7 TC=0.006 Dds 3 4 DDS .MODEL DDS D(BV={25*(0.001*TEMP+0.975)} M=0.36 CJO=23p VJ=0.8) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=40m TT=100n) Ra 4 2 .7 TC=0.006 Rs 3 5 10m Ls 5 30 .7n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 25p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.53 CJO=25p VJ=0.12) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS FDC6322CN * * FDC6322CP ELECTRICAL MODEL (PRELIMINARY) (SuperSOT-6 Complementary P-Ch DMOS) * --------------------------------------------------------------- .SUBCKT FDC6322CP 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS PMOS (VTO={-0.8*(-0.00232*TEMP+1.058)} KP={-0.0009*TEMP+0.8225} + THETA=0.096 VMAX=3.8E5 LEVEL=3) Cgs 1 3 130p Rd 20 4 0.25 TC=0.004 Dds 4 3 DDS .MODEL DDS D(BV={25*(0.00088*TEMP+0.978)} M=0.35 CJO=100p VJ=1.0) Dbody 20 3 DBODY .MODEL DBODY D(IS=1E-12 N=1 RS=12.7m TT=25n) Ra 4 2 0.25 TC=0.004 Rs 3 5 10m Ls 5 30 0.5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER PMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 110p Rcgd 7 4 10meg Dgd 4 6 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.55 CJO=110p VJ=0.120) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS FDC6322CP *======================================================================= * (SOIC-16 3 Phase Brushless Motor Driver) (*** PRELIMINARY MODELS ***) * NDM3000 Q1 P-Ch ELECTRICAL MODEL * --------------------------- .SUBCKT NDM3000Q1 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS PMOS (VTO={-1.7*{-0.00216*TEMP+1.054}} KP={-0.005*TEMP+4.525} + THETA=0.086 VMAX=5E5 TOX=4.25E-8 LEVEL=3) Cgs 1 3 200p Rd 20 4 60m TC=0.0036 Dds 4 3 DDS .MODEL DDS D(BV={20*{0.00064*TEMP+0.984}} M=0.25 CJO=310p VJ=0.51) Dbody 20 3 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=90m TT=29n) Ra 4 2 59m TC=0.0036 Rs 3 5 2m Ls 5 30 0.9n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER PMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1100p Rcgd 7 4 10meg Dgd 4 6 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.31 CJO=600p VJ=0.18) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDM3000Q1 * * NDM3000 Q2 N-Ch ELECTRICAL MODEL * --------------------------- .SUBCKT NDM3000Q2 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.5*{-0.00248*TEMP+1.062}} KP={-0.014*TEMP+7.55} + THETA=0.086 VMAX=5E5 LEVEL=3) Cgs 1 3 359p Rd 20 4 10m TC=0.0036 Dds 3 4 DDS .MODEL DDS D(BV={20*{0.0008*TEMP+0.98}} M=0.35 CJO=290p VJ=0.9) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=40m TT=70n) Ra 4 2 21m TC=0.0036 Rs 3 5 1m Ls 5 30 0.9n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1050p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.325 CJO=1050p VJ=0.039) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDM3000Q2 * * NDM3000 Q3 P-Ch ELECTRICAL MODEL * --------------------------- .SUBCKT NDM3000Q3 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS PMOS (VTO={-1.7*{-0.00216*TEMP+1.054}} KP={-0.005*TEMP+4.525} + THETA=0.086 VMAX=5E5 TOX=4.25E-8 LEVEL=3) Cgs 1 3 200p Rd 20 4 60m TC=0.0036 Dds 4 3 DDS .MODEL DDS D(BV={20*{0.00064*TEMP+0.984}} M=0.25 CJO=310p VJ=0.51) Dbody 20 3 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=90m TT=29n) Ra 4 2 59m TC=0.0036 Rs 3 5 2m Ls 5 30 0.9n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER PMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1100p Rcgd 7 4 10meg Dgd 4 6 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.31 CJO=600p VJ=0.18) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDM3000Q3 * * NDM3000 Q4 N-Ch ELECTRICAL MODEL * --------------------------- .SUBCKT NDM3000Q4 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.5*{-0.00248*TEMP+1.062}} KP={-0.0014*TEMP+7.55} + THETA=0.086 VMAX=5E5 LEVEL=3) Cgs 1 3 359p Rd 20 4 10m TC=0.0036 Dds 3 4 DDS .MODEL DDS D(BV={20*{0.0008*TEMP+0.98}} M=0.35 CJO=290p VJ=0.9) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=40m TT=70n) Ra 4 2 21m TC=0.0036 Rs 3 5 1m Ls 5 30 0.9n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1050p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.325 CJO=1050p VJ=0.039) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDM3000Q4 * * NDM3000 Q5 P-Ch ELECTRICAL MODEL * --------------------------- .SUBCKT NDM3000Q5 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS PMOS (VTO={-1.7*{-0.00216*TEMP+1.054}} KP={-0.005*TEMP+4.525} + THETA=0.086 VMAX=5E5 TOX=4.25E-8 LEVEL=3) Cgs 1 3 200p Rd 20 4 60m TC=0.0036 Dds 4 3 DDS .MODEL DDS D(BV={20*{0.00064*TEMP+0.984}} M=0.25 CJO=310p VJ=0.51) Dbody 20 3 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=90m TT=29n) Ra 4 2 59m TC=0.0036 Rs 3 5 2m Ls 5 30 0.9n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER PMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1100p Rcgd 7 4 10meg Dgd 4 6 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.31 CJO=600p VJ=0.18) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDM3000Q5 * * * NDM3000 Q6 N-Ch ELECTRICAL MODEL * --------------------------- .SUBCKT NDM3000Q6 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.5*{-0.00248*TEMP+1.062}} KP={-0.014*TEMP+7.55} + THETA=0.086 VMAX=5E5 LEVEL=3) Cgs 1 3 359p Rd 20 4 10m TC=0.0036 Dds 3 4 DDS .MODEL DDS D(BV={20*{0.0008*TEMP+0.98}} M=0.35 CJO=290p VJ=0.9) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=40m TT=70n) Ra 4 2 21m TC=0.0036 Rs 3 5 1m Ls 5 30 0.9n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1050p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.325 CJO=1050p VJ=0.039) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDM3000Q6 * * * NDM3000 QP P-Ch THERMAL MODEL ( *** PRELIMINARY MODEL ***) * ------------------------ .SUBCKT NDM3000QPTHM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*90*V(90,40)}; Tja=Pave(t)*RJA*rja(t) R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDM3000 QP P-Ch Single Pulsed rja(t) + (0.0001, 0.002232) + (0.0002, 0.003156) + (0.0005, 0.00499) + (0.001, 0.007057) + (0.002, 0.00998) + (0.005, 0.01578) + (0.01, 0.022316) + (0.02, 0.03156) + (0.05, 0.049901) + (0.1, 0.070571) + (0.2, 0.099802) + (0.5, 0.157801) + (1, 0.223165) + (2, 0.304706) + (5, 0.430226) + (10, 0.532168) + (20, 0.641667) + (50, 0.789139) + (100, 0.876999) + (200, 0.940897) + (500, 1) + (999, 1) .ENDS NDM3000QPTHM * * * NDM3000 QN N-Ch THERMAL MODEL ( *** PRELIMINARY MODEL ***) * ------------------------ .SUBCKT NDM3000QNTHM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*90*V(90,40)}; Tja=Pave(t)*RJA*rja(t) R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDM3000 QN N-Ch Single Pulsed rja(t) + (0.0001, 0.002232) + (0.0002, 0.003156) + (0.0005, 0.00499) + (0.001, 0.007057) + (0.002, 0.00998) + (0.005, 0.01578) + (0.01, 0.022316) + (0.02, 0.03156) + (0.05, 0.049901)+ (0.1, 0.070571) + (0.2, 0.099802) + (0.5, 0.157801) + (1, 0.223165) + (2, 0.304706) + (5, 0.430226) + (10, 0.532168) + (20, 0.641667) + (50, 0.789139) + (100, 0.876999) + (200, 0.940897) + (500, 1) + (999, 1) .ENDS NDM3000QNTHM * *======================================================================= * * NDP405A ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ----------------------------------------------- .SUBCKT NDP405A 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.4*{-0.00264*TEMP+1.066}} KP={-0.014*TEMP+6.55} + THETA=0.056 VMAX=1.9E5 LEVEL=3) Cgs 1 3 310p Rd 20 4 7.24m TC=0.0064 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.0008*TEMP+0.98}} M=0.34 CJO=312p VJ=1.2) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=116m TT=52n) Ra 4 2 33m TC=0.0064 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 600p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=900p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP405A * * * THERMAL MODEL OF NDP405A, NDP405AE, NDB405A, NDB405AE * NDP405AL, NDP405AEL, NDB405AL, NDB405AEL * NDP405B, NDP405BE, NDB405B, NDB405BE * NDP405BL, NDP405BEL, NDB405BL, NDB405BEL * --------------------------------------------------------- .SUBCKT 405THMAL 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tjc 100 40 VALUE = {V(80,40)*3*V(90,40)}; Tjc=Pave(t)*RJC*rjc(t) R100 100 40 1k R90 90 40 1k E_rjc 90 40 table {TIME} ; Normalized NDx405x Single Pulsed rjc(t) + (1e-005, 0.0248642) + (1.5e-005, 0.0304524) + (2e-005, 0.0351633) + (3e-005, 0.0430661) + (4e-005, 0.0497285) + (5e-005, 0.0555981) + (7e-005, 0.0657846) + (0.0001, 0.0786276) + (0.00015, 0.0962988) + (0.0002, 0.111196) + (0.0003, 0.136187) + (0.0004, 0.157255) + (0.0005, 0.175817) + (0.0007, 0.208029) + (0.001, 0.248642) + (0.0015, 0.304523) + (0.002, 0.351633) + (0.003, 0.424229) + (0.00400314, 0.475474) + (0.005, 0.510436) + (0.00700608, 0.558074) + (0.0100093, 0.605311) + (0.0148373, 0.650478) + (0.0200164, 0.686392) + (0.0299671, 0.727997) + (0.04, 0.753176) + (0.0501139, 0.774458) + (0.0698429, 0.800599) + (0.0999065, 0.825129) + (0.15, 0.852995) + (0.2, 0.871143) + (0.301229, 0.897258) + (0.398779, 0.914537) + (0.5, 0.92559) + (0.698881, 0.940554) + (0.999652, 0.954374) + (1.50072, 0.966226) + (2.00603, 0.973845) + (2.95383, 0.981524) + (3.9868, 0.987046) + (4.98026, 0.991486) + (6.85319, 0.995946) + (10, 1) .ENDS 405THMAL * *======================================================================= * * NDP405AE ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------ .SUBCKT NDP405AE 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.4*{-0.00264*TEMP+1.066}} KP={-0.014*TEMP+6.55} + THETA=0.056 VMAX=1.9E5 LEVEL=3) Cgs 1 3 310p Rd 20 4 7.24m TC=0.0064 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.0008*TEMP+0.98}} M=0.34 CJO=312p VJ=1.2) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=116m TT=52n) Ra 4 2 33m TC=0.0064 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 600p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=900p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP405AE * *======================================================================= * * NDB405A ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------ .SUBCKT NDB405A 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.4*{-0.00264*TEMP+1.066}} KP={-0.014*TEMP+6.55} + THETA=0.056 VMAX=1.9E5 LEVEL=3) Cgs 1 3 310p Rd 20 4 7.24m TC=0.0064 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.0008*TEMP+0.98}} M=0.34 CJO=312p VJ=1.2) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=116m TT=52n) Ra 4 2 33m TC=0.0064 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 600p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=900p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB405A * *======================================================================= * * NDB405AE ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------ .SUBCKT NDB405AE 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.4*{-0.00264*TEMP+1.066}} KP={-0.014*TEMP+6.55} + THETA=0.056 VMAX=1.9E5 LEVEL=3) Cgs 1 3 310p Rd 20 4 7.24m TC=0.0064 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.0008*TEMP+0.98}} M=0.34 CJO=312p VJ=1.2) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=116m TT=52n) Ra 4 2 33m TC=0.0064 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 600p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=900p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB405AE * *======================================================================= * * NDP405AL ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------- .SUBCKT NDP405AL 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={1.3*{-0.00264*TEMP+1.066}} KP={-0.017*TEMP+8.925} + THETA=0.086 VMAX=2.2E5 LEVEL=3) Cgs 1 3 500p Rd 20 4 8m TC=0.0072 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00088*TEMP+0.976}} M=0.36 CJO=303p VJ=1.18) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=119m TT=53n) Ra 4 2 24.5m TC=0.0072 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=2500p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP405AL * *======================================================================= * * NDP405AEL ELECTRICAL MODEL (TO-220 N-Ch DMOS) * -------------------------- .SUBCKT NDP405AEL 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={1.3*{-0.00264*TEMP+1.066}} KP={-0.017*TEMP+8.925} + THETA=0.086 VMAX=2.2E5 LEVEL=3) Cgs 1 3 500p Rd 20 4 8m TC=0.0072 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00088*TEMP+0.978}} M=0.36 CJO=303p VJ=1.18) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=119m TT=53n) Ra 4 2 25.4m TC=0.0072 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=2500p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP405AEL * *======================================================================= * * NDB405AL ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------- .SUBCKT NDB405AL 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={1.3*{-0.00264*TEMP+1.066}} KP={-0.017*TEMP+8.925} + THETA=0.086 VMAX=2.2E5 LEVEL=3) Cgs 1 3 500p Rd 20 4 8m TC=0.0072 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00088*TEMP+0.978}} M=0.36 CJO=303p VJ=1.18) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=119m TT=53n) Ra 4 2 25.3m TC=0.0072 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=2500p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB405AL * *======================================================================= * * NDB405AEL ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------- .SUBCKT NDB405AEL 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={1.3*{-0.00264*TEMP+1.066}} KP={-0.017*TEMP+8.925} + THETA=0.086 VMAX=2.2E5 LEVEL=3) Cgs 1 3 500p Rd 20 4 8m TC=0.0072 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00088*TEMP+0.978}} M=0.36 CJO=303p VJ=1.18) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=119m TT=53n) Ra 4 2 25.3m TC=0.0072 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=2500p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB405AEL * *======================================================================= * * NDP405B ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------ .SUBCKT NDP405B 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.4*{-0.00264*TEMP+1.066}} KP={-0.014*TEMP+6.55} + THETA=0.056 VMAX=1.9E5 LEVEL=3) Cgs 1 3 310p Rd 20 4 13m TC=0.0064 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.0008*TEMP+0.978}} M=0.34 CJO=312p VJ=1.2) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=116m TT=52n) Ra 4 2 55m TC=0.0064 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 600p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=900p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP405B * *======================================================================= * * NDP405BE ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------ .SUBCKT NDP405BE 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.4*{-0.00264*TEMP+1.066}} KP={-0.014*TEMP+6.55} + THETA=0.056 VMAX=1.9E5 LEVEL=3) Cgs 1 3 310p Rd 20 4 13m TC=0.0064 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.0008*TEMP+0.98}} M=0.34 CJO=312p VJ=1.2) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=116m TT=52n) Ra 4 2 55m TC=0.0064 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 600p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=900p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP405BE * *======================================================================= * * NDB405B ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------ .SUBCKT NDB405B 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.4*{-0.00264*TEMP+1.066}} KP={-0.014*TEMP+6.55} + THETA=0.056 VMAX=1.9E5 LEVEL=3) Cgs 1 3 310p Rd 20 4 13m TC=0.0064 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.0008*TEMP+0.98}} M=0.34 CJO=312p VJ=1.2) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=116m TT=52n) Ra 4 2 55m TC=0.0064 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 600p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=900p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB405B * *======================================================================= * * NDB405BE ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------ .SUBCKT NDB405BE 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.4*{-0.00264*TEMP+1.066}} KP={-0.014*TEMP+6.55} + THETA=0.056 VMAX=1.9E5 LEVEL=3) Cgs 1 3 310p Rd 20 4 13m TC=0.0064 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.0008*TEMP+0.98}} M=0.34 CJO=312p VJ=1.2) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=116m TT=52n) Ra 4 2 55m TC=0.0064 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 600p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=900p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB405BE * *======================================================================= * * NDP405BL ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------- .SUBCKT NDP405BL 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={1.3*{-0.00264*TEMP+1.066}} KP={-0.017*TEMP+8.925} + THETA=0.086 VMAX=2.2E5 LEVEL=3) Cgs 1 3 500p Rd 20 4 14m TC=0.0072 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00088*TEMP+0.978}} M=0.36 CJO=303p VJ=1.18) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=119m TT=53n) Ra 4 2 47m TC=0.0072 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=2500p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP405BL * *======================================================================= * * NDP405BEL ELECTRICAL MODEL (TO-220 N-Ch DMOS) * -------------------------- .SUBCKT NDP405BEL 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={1.3*{-0.00264*TEMP+1.066}} KP={-0.017*TEMP+8.925} + THETA=0.086 VMAX=2.2E5 LEVEL=3) Cgs 1 3 500p Rd 20 4 14m TC=0.0072 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00088*TEMP+0.978}} M=0.36 CJO=303p VJ=1.18) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=119m TT=53n) Ra 4 2 47m TC=0.0072 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=2500p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP405BEL * *======================================================================= * * NDB405BL ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------ .SUBCKT NDB405BL 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={1.3*{-0.00264*TEMP+1.066}} KP={-0.017*TEMP+8.925} + THETA=0.086 VMAX=2.2E5 LEVEL=3) Cgs 1 3 500p Rd 20 4 14m TC=0.0072 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00088*TEMP+0.978}} M=0.36 CJO=303p VJ=1.18) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=119m TT=53n) Ra 4 2 47m TC=0.0072 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=2500p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB405BL * *======================================================================= * * NDB405BEL ELECTRICAL MODEL (TO-263 N-Ch DMOS) * -------------------------- .SUBCKT NDB405BEL 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={1.3*{-0.00264*TEMP+1.066}} KP={-0.017*TEMP+8.925} + THETA=0.086 VMAX=2.2E5 LEVEL=3) Cgs 1 3 500p Rd 20 4 14m TC=0.0072 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00088*TEMP+0.978}} M=0.36 CJO=303p VJ=1.18) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=119m TT=53n) Ra 4 2 47m TC=0.0072 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=2500p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB405BEL * *======================================================================= * *NDB4050 ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ---------------------- .SUBCKT NDB4050 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.1*{-0.00264*TEMP+1.066}} KP={-0.014*TEMP+6.55} + THETA=0.056 VMAX=1.9E5 LEVEL=3) Cgs 1 3 310p Rd 20 4 7m TC=0.0072 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.0008*TEMP+0.98}} M=0.34 CJO=312p VJ=1.2) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=116m TT=52n) Ra 4 2 31m TC=0.0072 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 600p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=900p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB4050 * *===================================================================== * *NDP4050 ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ---------------------- .SUBCKT NDP4050 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.1*{-0.00264*TEMP+1.066}} KP={-0.014*TEMP+6.55} + THETA=0.056 VMAX=1.9E5 LEVEL=3) Cgs 1 3 310p Rd 20 4 7m TC=0.0072 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.0008*TEMP+0.98}} M=0.34 CJO=312p VJ=1.2) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=116m TT=52n) Ra 4 2 31m TC=0.0072 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 600p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=900p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP4050 * * * NDP4050 THERMAL MODEL * --------------------- .SUBCKT 4050THM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tjc 100 40 VALUE = {V(80,40)*3*V(90,40)}; Tjc=Pave(t)*RJC*rjc(t) R100 100 40 1k R90 90 40 1k E_rjc 90 40 table {TIME} ; Normalized NDP4050 Single Pulsed rjc(t) + (1e-005, 0.0248642) + (1.5e-005, 0.0304524) + (2e-005, 0.0351633) + (3e-005, 0.0430661) + (4e-005, 0.0497285) + (5e-005, 0.0555981) + (7e-005, 0.0657846) + (0.0001, 0.0786276) + (0.00015, 0.0962988) + (0.0002, 0.111196) + (0.0003, 0.136187) + (0.0004, 0.157255) + (0.0005, 0.175817) + (0.0007, 0.208029) + (0.001, 0.248642) + (0.0015, 0.304523) + (0.002, 0.351633) + (0.003, 0.424229) + (0.00400314, 0.475474) + (0.005, 0.510436) + (0.00700608, 0.558074) + (0.0100093, 0.605311) + (0.0148373, 0.650478) + (0.0200164, 0.686392) + (0.0299671, 0.727997) + (0.04, 0.753176) + (0.0501139, 0.774458) + (0.0698429, 0.800599) + (0.0999065, 0.825129) + (0.15, 0.852995) + (0.2, 0.871143) + (0.301229, 0.897258) + (0.398779, 0.914537) + (0.5, 0.92559) + (0.698881, 0.940554) + (0.999652, 0.954374) + (1.50072, 0.966226) + (2.00603, 0.973845) + (2.95383, 0.981524) + (3.9868, 0.987046) + (4.98026, 0.991486) + (6.85319, 0.995946) + (10, 1) .ENDS 4050THM * *================================================================ * *NDB4060 ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ---------------------- .SUBCKT NDB4060 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.1*{-0.00264*TEMP+1.066}} KP={-0.014*TEMP+6.55} + THETA=0.056 VMAX=1.9E5 LEVEL=3) Cgs 1 3 310p Rd 20 4 7m TC=0.0064 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.0008*TEMP+0.98}} M=0.34 CJO=312p VJ=1.2) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=116m TT=52n) Ra 4 2 31m TC=0.0064 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 600p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=900p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB4060 * *==================================================================== * *NDP4060 ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ---------------------- .SUBCKT NDP4060 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.1*{-0.00264*TEMP+1.066}} KP={-0.014*TEMP+6.55} + THETA=0.056 VMAX=1.9E5 LEVEL=3) Cgs 1 3 310p Rd 20 4 7m TC=0.0064 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.0008*TEMP+0.98}} M=0.34 CJO=312p VJ=1.2) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=116m TT=52n) Ra 4 2 31m TC=0.0064 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 600p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=900p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP4060 * * * NDP4060 THERMAL MODEL * --------------------- .SUBCKT 4060THM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tjc 100 40 VALUE = {V(80,40)*3*V(90,40)}; Tjc=Pave(t)*RJC*rjc(t) R100 100 40 1k R90 90 40 1k E_rjc 90 40 table {TIME} ; Normalized NDP4060 Single Pulsed rjc(t) + (1e-005, 0.0248642) + (1.5e-005, 0.0304524) + (2e-005, 0.0351633) + (3e-005, 0.0430661) + (4e-005, 0.0497285) + (5e-005, 0.0555981) + (7e-005, 0.0657846) + (0.0001, 0.0786276) + (0.00015, 0.0962988) + (0.0002, 0.111196) + (0.0003, 0.136187) + (0.0004, 0.157255) + (0.0005, 0.175817) + (0.0007, 0.208029) + (0.001, 0.248642) + (0.0015, 0.304523) + (0.002, 0.351633) + (0.003, 0.424229) + (0.00400314, 0.475474) + (0.005, 0.510436) + (0.00700608, 0.558074) + (0.0100093, 0.605311) + (0.0148373, 0.650478) + (0.0200164, 0.686392) + (0.0299671, 0.727997) + (0.04, 0.753176) + (0.0501139, 0.774458) + (0.0698429, 0.800599) + (0.0999065, 0.825129) + (0.15, 0.852995) + (0.2, 0.871143) + (0.301229, 0.897258) + (0.398779, 0.914537) + (0.5, 0.92559) + (0.698881, 0.940554) + (0.999652, 0.954374) + (1.50072, 0.966226) + (2.00603, 0.973845) + (2.95383, 0.981524) + (3.9868, 0.987046) + (4.98026, 0.991486) + (6.85319, 0.995946) + (10, 1) .ENDS 4060THM * *================================================================ * * NDP406A ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------ .SUBCKT NDP406A 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.4*{-0.00264*TEMP+1.066}} KP={-0.014*TEMP+6.55} + THETA=0.056 VMAX=1.9E5 LEVEL=3) Cgs 1 3 310p Rd 20 4 7.24m TC=0.0064 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.0008*TEMP+0.98}} M=0.34 CJO=312p VJ=1.2) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=116m TT=52n) Ra 4 2 33m TC=0.0064 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 600p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=900p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP406A * * * THERMAL MODEL OF NDP406A, NDP406AE, NDB406A, NDB406AE * NDP406AL, NDP406AEL, NDB406AL, NDB406AEL * NDP406B, NDP406BE, NDB406B, NDB406BE * NDP406BL, NDP406BEL, NDB406BL, NDB406BEL * --------------------------------------------------------- .SUBCKT 406THMAL 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tjc 100 40 VALUE = {V(80,40)*3*V(90,40)}; Tjc=Pave(t)*RJC*rjc(t) R100 100 40 1k R90 90 40 1k E_rjc 90 40 table {TIME} ; Normalized NDx406x Single Pulsed rjc(t) + (1e-005, 0.0248642) + (1.5e-005, 0.0304524) + (2e-005, 0.0351633) + (3e-005, 0.0430661) + (4e-005, 0.0497285) + (5e-005, 0.0555981) + (7e-005, 0.0657846) + (0.0001, 0.0786276) + (0.00015, 0.0962988) + (0.0002, 0.111196) + (0.0003, 0.136187) + (0.0004, 0.157255) + (0.0005, 0.175817) + (0.0007, 0.208029) + (0.001, 0.248642) + (0.0015, 0.304523) + (0.002, 0.351633) + (0.003, 0.424229) + (0.00400314, 0.475474) + (0.005, 0.510436) + (0.00700608, 0.558074) + (0.0100093, 0.605311) + (0.0148373, 0.650478) + (0.0200164, 0.686392) + (0.0299671, 0.727997) + (0.04, 0.753176) + (0.0501139, 0.774458) + (0.0698429, 0.800599) + (0.0999065, 0.825129) + (0.15, 0.852995) + (0.2, 0.871143) + (0.301229, 0.897258) + (0.398779, 0.914537) + (0.5, 0.92559) + (0.698881, 0.940554) + (0.999652, 0.954374) + (1.50072, 0.966226) + (2.00603, 0.973845) + (2.95383, 0.981524) + (3.9868, 0.987046) + (4.98026, 0.991486) + (6.85319, 0.995946) + (10, 1).ENDS 406THMAL * *======================================================================= * * NDP406AE ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------- .SUBCKT NDP406AE 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.4*{-0.00264*TEMP+1.066}} KP={-0.014*TEMP+6.55} + THETA=0.056 VMAX=1.9E5 LEVEL=3) Cgs 1 3 310p Rd 20 4 7.24m TC=0.0064 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.0008*TEMP+0.98}} M=0.34 CJO=312p VJ=1.2) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=116m TT=52n) Ra 4 2 33m TC=0.0064 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 600p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=900p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP406AE * *======================================================================= * * NDB406A ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------ .SUBCKT NDB406A 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.4*{-0.00264*TEMP+1.066}} KP={-0.014*TEMP+6.55} + THETA=0.056 VMAX=1.9E5 LEVEL=3) Cgs 1 3 310p Rd 20 4 7.24m TC=0.0064 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.0008*TEMP+0.98}} M=0.34 CJO=312p VJ=1.2) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=116m TT=52n) Ra 4 2 33m TC=0.0064 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 600p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=900p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB406A * *======================================================================= * * NDB406AE ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------- .SUBCKT NDB406AE 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.4*{-0.00264*TEMP+1.066}} KP={-0.014*TEMP+6.55} + THETA=0.056 VMAX=1.9E5 LEVEL=3) Cgs 1 3 310p Rd 20 4 7.24m TC=0.0064 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.0008*TEMP+0.98}} M=0.34 CJO=312p VJ=1.2) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=116m TT=52n) Ra 4 2 33m TC=0.0064 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 600p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=900p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB406AE * *======================================================================= * * NDP406AL ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------- .SUBCKT NDP406AL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={1.3*{-0.00264*TEMP+1.066}} KP={-0.017*TEMP+8.925} + THETA=0.086 VMAX=2.2E5 LEVEL=3) Cgs 1 3 500p Rd 20 4 8m TC=0.0072 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.36 CJO=303p VJ=1.18) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=119m TT=53n) Ra 4 2 25.3m TC=0.0072 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.51 CJO=2500p VJ=0.047) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP406AL * *======================================================================= * * NDP406AEL ELECTRICAL MODEL (TO-220 N-Ch DMOS) * -------------------------- .SUBCKT NDP406AEL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={1.3*{-0.00264*TEMP+1.066}} KP={-0.017*TEMP+8.925} + THETA=0.086 VMAX=2.2E5 LEVEL=3) Cgs 1 3 500p Rd 20 4 8m TC=0.0072 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.36 CJO=303p VJ=1.18) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=119m TT=53n) Ra 4 2 25.3m TC=0.0072 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.51 CJO=2500p VJ=0.047) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP406AEL * *======================================================================= * * NDB406AL ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------- .SUBCKT NDB406AL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={1.3*{-0.00264*TEMP+1.066}} KP={-0.017*TEMP+8.925} + THETA=0.086 VMAX=2.2E5 LEVEL=3) Cgs 1 3 500p Rd 20 4 8m TC=0.0072 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.36 CJO=303p VJ=1.18) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=119m TT=53n) Ra 4 2 25.3m TC=0.0072 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.51 CJO=2500p VJ=0.047) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB406AL * *======================================================================= * * NDB406AEL ELECTRICAL MODEL (TO-263 N-Ch DMOS) * -------------------------- .SUBCKT NDB406AEL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={1.3*{-0.00264*TEMP+1.066}} KP={-0.017*TEMP+8.925} + THETA=0.086 VMAX=2.2E5 LEVEL=3) Cgs 1 3 500p Rd 20 4 8m TC=0.0072 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.36 CJO=303p VJ=1.18) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=119m TT=53n) Ra 4 2 25.3m TC=0.0072 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.51 CJO=2500p VJ=0.047) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB406AEL * *======================================================================= * * NDP406B ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------ .SUBCKT NDP406B 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.4*{-0.00264*TEMP+1.066}} KP={-0.014*TEMP+6.55} + THETA=0.056 VMAX=1.9E5 LEVEL=3) Cgs 1 3 310p Rd 20 4 13m TC=0.0064 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.0008*TEMP+0.98}} M=0.34 CJO=312p VJ=1.2) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=116m TT=52n) Ra 4 2 55m TC=0.0064 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 600p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=900p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP406B * *======================================================================= * * NDP406BE ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------- .SUBCKT NDP406BE 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.4*{-0.00264*TEMP+1.066}} KP={-0.014*TEMP+6.55} + THETA=0.056 VMAX=1.9E5 LEVEL=3) Cgs 1 3 310p Rd 20 4 13m TC=0.0064 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.0008*TEMP+0.98}} M=0.34 CJO=312p VJ=1.2) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=116m TT=52n) Ra 4 2 55m TC=0.0064 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 600p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=900p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP406BE * *======================================================================= * * NDB406B ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------ .SUBCKT NDB406B 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.4*{-0.00264*TEMP+1.066}} KP={-0.014*TEMP+6.55} + THETA=0.056 VMAX=1.9E5 LEVEL=3) Cgs 1 3 310p Rd 20 4 13m TC=0.0064 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.0008*TEMP+0.98}} M=0.34 CJO=312p VJ=1.2) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=116m TT=52n) Ra 4 2 55m TC=0.0064 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 600p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=900p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB406B * *======================================================================= * * NDB406BE ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------- .SUBCKT NDB406BE 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.4*{-0.00264*TEMP+1.066}} KP={-0.014*TEMP+6.55} + THETA=0.056 VMAX=1.9E5 LEVEL=3) Cgs 1 3 310p Rd 20 4 13m TC=0.0064 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.0008*TEMP+0.98}} M=0.34 CJO=312p VJ=1.2) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=116m TT=52n) Ra 4 2 55m TC=0.0064 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 600p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=900p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB406BE * *======================================================================= * * NDP406BL ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------- .SUBCKT NDP406BL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={1.3*{-0.00264*TEMP+1.066}} KP={-0.017*TEMP+8.925} + THETA=0.086 VMAX=2.2E5 LEVEL=3) Cgs 1 3 500p Rd 20 4 14m TC=0.0072 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.36 CJO=303p VJ=1.18) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=119m TT=53n) Ra 4 2 47m TC=0.0072 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.51 CJO=2500p VJ=0.047) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP406BL * *======================================================================= * * NDP406BEL ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------- .SUBCKT NDP406BEL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={1.3*{-0.00264*TEMP+1.066}} KP={-0.017*TEMP+8.925} + THETA=0.086 VMAX=2.2E5 LEVEL=3) Cgs 1 3 500p Rd 20 4 14m TC=0.0072 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.36 CJO=303p VJ=1.18) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=119m TT=53n) Ra 4 2 47m TC=0.0072 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.51 CJO=2500p VJ=0.047) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP406BEL * *======================================================================= * * NDB406BL ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------- .SUBCKT NDB406BL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={1.3*{-0.00264*TEMP+1.066}} KP={-0.017*TEMP+8.925} + THETA=0.086 VMAX=2.2E5 LEVEL=3) Cgs 1 3 500p Rd 20 4 14m TC=0.0072 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.36 CJO=303p VJ=1.18) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=119m TT=53n) Ra 4 2 47m TC=0.0072 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.51 CJO=2500p VJ=0.047) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB406BL * *======================================================================= * * NDB406BEL ELECTRICAL MODEL * -------------------------- .SUBCKT NDB406BEL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={1.3*{-0.00264*TEMP+1.066}} KP={-0.017*TEMP+8.925} + THETA=0.086 VMAX=2.2E5 LEVEL=3) Cgs 1 3 500p Rd 20 4 14m TC=0.0072 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.36 CJO=303p VJ=1.18) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=119m TT=53n) Ra 4 2 47m TC=0.0072 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.51 CJO=2500p VJ=0.047) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB406BEL * *======================================================================= * * NDP408A ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------ .SUBCKT NDP408A 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.2*{-0.00216*TEMP+1.054}} KP={-0.014*TEMP+6.55} + THETA=0.056 VMAX=1.5E5 LEVEL=3) Cgs 1 3 340p Rd 20 4 33m TC=0.008 Dds 3 4 DDS .MODEL DDS D(BV={80*{0.00096*TEMP+0.976}} M=0.3 CJO=1142p VJ=0.9) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=20m TT=80n) Ra 4 2 39m TC=0.008 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 600p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=620p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP408A * * * THERMAL MODEL OF NDP408A, NDP408AE, NDB408A, NDB408AE, * NDP408B, NDP408BE, NDB408B, NDB408BE * -------------------------------------------------------- .SUBCKT 408THMAL 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tjc 100 40 VALUE = {V(80,40)*3*V(90,40)}; Tjc=Pave(t)*RJC*rjc(t) R100 100 40 1k R90 90 40 1k E_rjc 90 40 table {TIME} ; Normalized NDx408x Single Pulsed rjc(t) + (1e-005, 0.0248642) + (1.5e-005, 0.0304524) + (2e-005, 0.0351633) + (3e-005, 0.0430661) + (4e-005, 0.0497285) + (5e-005, 0.0555981) + (7e-005, 0.0657846) + (0.0001, 0.0786276) + (0.00015, 0.0962988) + (0.0002, 0.111196) + (0.0003, 0.136187) + (0.0004, 0.157255) + (0.0005, 0.175817) + (0.0007, 0.208029) + (0.001, 0.248642) + (0.0015, 0.304523) + (0.002, 0.351633) + (0.003, 0.424229) + (0.00400314, 0.475474) + (0.005, 0.510436) + (0.00700608, 0.558074) + (0.0100093, 0.605311) + (0.0148373, 0.650478) + (0.0200164, 0.686392) + (0.0299671, 0.727997) + (0.04, 0.753176) + (0.0501139, 0.774458) + (0.0698429, 0.800599) + (0.0999065, 0.825129) + (0.15, 0.852995) + (0.2, 0.871143) + (0.301229, 0.897258) + (0.398779, 0.914537) + (0.5, 0.92559) + (0.698881, 0.940554) + (0.999652, 0.954374) + (1.50072, 0.966226) + (2.00603, 0.973845) + (2.95383, 0.981524) + (3.9868, 0.987046) + (4.98026, 0.991486) + (6.85319, 0.995946) + (10, 1) .ENDS 408THMAL * *======================================================================= * * NDP408AE ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------- .SUBCKT NDP408AE 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.2*{-0.00216*TEMP+1.054}} KP={-0.014*TEMP+6.55} + THETA=0.056 VMAX=1.5E5 LEVEL=3) Cgs 1 3 340p Rd 20 4 33m TC=0.008 Dds 3 4 DDS .MODEL DDS D(BV={80*{0.00096*TEMP+0.976}} M=0.3 CJO=1142p VJ=0.9) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=20m TT=80n) Ra 4 2 39m TC=0.008 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 600p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=620p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP408AE * *======================================================================= * * NDB408A ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------ .SUBCKT NDB408A 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.2*{-0.00216*TEMP+1.054}} KP={-0.014*TEMP+6.55} + THETA=0.056 VMAX=1.5E5 LEVEL=3) Cgs 1 3 340p Rd 20 4 33m TC=0.008 Dds 3 4 DDS .MODEL DDS D(BV={80*{0.00096*TEMP+0.976}} M=0.3 CJO=1142p VJ=0.9) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=20m TT=80n) Ra 4 2 39m TC=0.008 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 600p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=620p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB408A * *======================================================================= * * NDB408AE ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------- .SUBCKT NDB408AE 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.2*{-0.00216*TEMP+1.054}} KP={-0.014*TEMP+6.55} + THETA=0.056 VMAX=1.5E5 LEVEL=3) Cgs 1 3 340p Rd 20 4 33m TC=0.008 Dds 3 4 DDS .MODEL DDS D(BV={80*{0.00096*TEMP+0.976}} M=0.3 CJO=1142p VJ=0.9) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=20m TT=80n) Ra 4 2 39m TC=0.008 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 600p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=620p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB408AE * *======================================================================= * * NDP408B ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------ .SUBCKT NDP408B 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.2*{-0.00216*TEMP+1.054}} KP={-0.014*TEMP+6.55} + THETA=0.056 VMAX=1.5E5 LEVEL=3) Cgs 1 3 340p Rd 20 4 38m TC=0.008 Dds 3 4 DDS .MODEL DDS D(BV={80*{0.00096*TEMP+0.976}} M=0.3 CJO=1142p VJ=0.9) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=20m TT=80n) Ra 4 2 44m TC=0.008 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 600p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=620p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP408B * *======================================================================= * * NDP408BE ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------- .SUBCKT NDP408BE 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.2*{-0.00216*TEMP+1.054}} KP={-0.014*TEMP+6.55} + THETA=0.056 VMAX=1.5E5 LEVEL=3) Cgs 1 3 340p Rd 20 4 38m TC=0.008 Dds 3 4 DDS .MODEL DDS D(BV={80*{0.00096*TEMP+0.976}} M=0.3 CJO=1142p VJ=0.9) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=20m TT=80n) Ra 4 2 44m TC=0.008 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 600p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg.MODEL DGD D(M=0.54 CJO=620p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP408BE * *======================================================================= * * NDB408B ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------ .SUBCKT NDB408B 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.2*{-0.00216*TEMP+1.054}} KP={-0.014*TEMP+6.55} + THETA=0.056 VMAX=1.5E5 LEVEL=3) Cgs 1 3 340p Rd 20 4 38m TC=0.008 Dds 3 4 DDS .MODEL DDS D(BV={80*{0.00096*TEMP+0.976}} M=0.3 CJO=1142p VJ=0.9) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=20m TT=80n) Ra 4 2 44m TC=0.008 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 600p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=620p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB408B * *======================================================================= * * NDB408BE ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------- .SUBCKT NDB408BE 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.2*{-0.00216*TEMP+1.054}} KP={-0.014*TEMP+6.55} + THETA=0.056 VMAX=1.5E5 LEVEL=3) Cgs 1 3 340p Rd 20 4 38m TC=0.008 Dds 3 4 DDS .MODEL DDS D(BV={80*{0.00096*TEMP+0.976}} M=0.3 CJO=1142p VJ=0.9) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=20m TT=80n) Ra 4 2 44m TC=0.008 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 600p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=620p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB408BE * *======================================================================= * * NDP505A ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------ .SUBCKT NDP505A 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.1*{-0.00264*TEMP+1.066}} KP={-0.018*TEMP+10.45} + THETA=0.056 VMAX=1.6E5 LEVEL=3) Cgs 1 3 621p Rd 20 4 6.7m TC=0.00416 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00088*TEMP+0.978}} M=0.33 CJO=459p VJ=1.05) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=70.8m TT=60n) Ra 4 2 13.2m TC=0.00416 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1200p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.53 CJO=1600p VJ=0.23) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP505A * * * THERMAL MODEL OF NDP505A, NDP505AE, NDB505A, NDB505AE, * NDP505AL, NDP505AEL, NDB505AL, NDB505AEL, * NDP505B, NDP505BE, NDB505B, NDB505BE, * NDP505BL, NDP505BEL, NDB505BL, NDB505BEL * --------------------------------------------------------- .SUBCKT 505THMAL 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tjc 100 40 VALUE = {V(80,40)*2.5*V(90,40)}; Tjc=Pave(t)*RJC*rjc(t) R100 100 40 1k R90 90 40 1k E_rjc 90 40 table {TIME} ; Normalized NDx505x Single Pulsed rjc(t) + (0.00001, 0.022853) + (0.000015, 0.02799) + (0.00002, 0.03232) + (0.00003, 0.039583) + (0.00004, 0.045707) + (0.00005, 0.051102) + (0.00007, 0.060465) + (0.0001, 0.072269) + (0.0002, 0.102204) + (0.000299, 0.125874) + (0.0004, 0.145186) + (0.0005, 0.161404) + (0.000698, 0.191381) + (0.001, 0.228536) + (0.0015, 0.279898) + (0.002001, 0.321014) + (0.002995, 0.383532) + (0.004, 0.43045) + (0.005, 0.466497) + (0.007019, 0.518902) + (0.01, 0.567218) + (0.01479, 0.614871) + (0.020815, 0.654644) + (0.030075, 0.693922) + (0.040382, 0.723533) + (0.049664, 0.742936) + (0.069676, 0.774638) + (0.100235, 0.808819) + (0.149725, 0.844508) + (0.199661, 0.869305) + (0.297795, 0.898022) + (0.398993, 0.91482) + (0.499729, 0.925716) + (0.700469, 0.940445) + (0.998995, 0.955408) + (1.5, 0.968511) + (1.99706, 0.975731) + (3, 0.984415) + (4, 0.989822) + (5, 0.992366) + (7, 0.994063) + (10, 1) .ENDS 505THMAL * *======================================================================= * * NDP505AE ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------- .SUBCKT NDP505AE 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.1*{-0.00264*TEMP+1.066}} KP={-0.018*TEMP+10.45} + THETA=0.056 VMAX=1.6E5 LEVEL=3) Cgs 1 3 621p Rd 20 4 6.7m TC=0.00416 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00088*TEMP+0.978}} M=0.33 CJO=459p VJ=1.05) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=70.8m TT=60n) Ra 4 2 13.2m TC=0.00416 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1200p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.53 CJO=1600p VJ=0.23) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP505AE * *======================================================================= * * NDB505A ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------ .SUBCKT NDB505A 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.1*{-0.00232*TEMP+1.058}} KP={-0.018*TEMP+10.45} + THETA=0.056 VMAX=1.6E5 LEVEL=3) Cgs 1 3 621p Rd 20 4 6.7m TC=0.00416 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00088*TEMP+0.978}} M=0.33 CJO=459p VJ=1.05) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=70.8m TT=60n) Ra 4 2 13.2m TC=0.00416 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1200p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.53 CJO=1600p VJ=0.23) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB505A * *======================================================================= * * NDB505AE ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------- .SUBCKT NDB505AE 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.1*{-0.00232*TEMP+1.058}} KP={-0.018*TEMP+10.45} + THETA=0.056 VMAX=1.6E5 LEVEL=3) Cgs 1 3 621p Rd 20 4 6.7m TC=0.00416 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00088*TEMP+0.978}} M=0.33 CJO=459p VJ=1.05) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=70.8m TT=60n) Ra 4 2 13.2m TC=0.00416 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1200p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.53 CJO=1600p VJ=0.23) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB505AE * *======================================================================= * * NDP505AL ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------- .SUBCKT NDP505AL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={1.6*{-0.0032*TEMP+1.08}} KP={-0.025*TEMP+15.125} + THETA=0.086 VMAX=2.1E5 LEVEL=3) Cgs 1 3 734p Rd 20 4 3.5m TC=0.0056 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00088*TEMP+0.978}} M=0.35 CJO=537p VJ=1.16) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=70.8m TT=70n) Ra 4 2 14.9m TC=0.0056 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 2500p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=1600p VJ=0.104) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP505AL * *======================================================================= * * NDP505AEL ELECTRICAL MODEL (TO-220 N-Ch DMOS) * -------------------------- .SUBCKT NDP505AEL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={1.6*{-0.0032*TEMP+1.08}} KP={-0.025*TEMP+15.125} + THETA=0.086 VMAX=2.1E5 LEVEL=3) Cgs 1 3 734p Rd 20 4 3.5m TC=0.0056 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00088*TEMP+0.978}} M=0.35 CJO=537p VJ=1.16) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=70.8m TT=70n) Ra 4 2 14.9m TC=0.0056 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 2500p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=1600p VJ=0.104) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP505AEL * *======================================================================= * * NDB505AL ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------- .SUBCKT NDB505AL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={1.6*{-0.0032*TEMP+1.08}} KP={-0.025*TEMP+15.125} + THETA=0.086 VMAX=2.1E5 LEVEL=3) Cgs 1 3 734p Rd 20 4 3.5m TC=0.0056 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00088*TEMP+0.978}} M=0.35 CJO=537p VJ=1.16) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=70.8m TT=70n) Ra 4 2 14.9m TC=0.0056 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 2500p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=1600p VJ=0.104) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB505AL * *======================================================================= * * NDB505AEL ELECTRICAL MODEL (TO-263 N-Ch DMOS) * -------------------------- .SUBCKT NDB505AEL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={1.6*{-0.0032*TEMP+1.08}} KP={-0.025*TEMP+15.125} + THETA=0.086 VMAX=2.1E5 LEVEL=3) Cgs 1 3 734p Rd 20 4 3.5m TC=0.0056 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00088*TEMP+0.978}} M=0.35 CJO=537p VJ=1.16) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=70.8m TT=70n) Ra 4 2 14.9m TC=0.0056 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 2500p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=1600p VJ=0.104) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB505AEL * *======================================================================= * * NDP505B ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------ .SUBCKT NDP505B 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.1*{-0.00232*TEMP+1.058}} KP={-0.018*TEMP+10.45} + THETA=0.056 VMAX=1.6E5 LEVEL=3) Cgs 1 3 621p Rd 20 4 12m TC=0.00416 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00088*TEMP+0.978}} M=0.33 CJO=459p VJ=1.05) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=70.8m TT=60n) Ra 4 2 18m TC=0.00416 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1200p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.53 CJO=1600p VJ=0.23) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP505B * *======================================================================= * * NDP505BE ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------- .SUBCKT NDP505BE 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.1*{-0.00232*TEMP+1.058}} KP={-0.018*TEMP+10.45} + THETA=0.056 VMAX=1.6E5 LEVEL=3) Cgs 1 3 621p Rd 20 4 12m TC=0.00416 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00088*TEMP+0.978}} M=0.33 CJO=459p VJ=1.05) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=70.8m TT=60n) Ra 4 2 18m TC=0.00416 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1200p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.53 CJO=1600p VJ=0.23) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP505BE * *======================================================================= * * NDB505B ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------ .SUBCKT NDB505B 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.1*{-0.00232*TEMP+1.058}} KP={-0.018*TEMP+10.45} + THETA=0.056 VMAX=1.6E5 LEVEL=3) Cgs 1 3 621p Rd 20 4 12m TC=0.00416 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00088*TEMP+0.978}} M=0.33 CJO=459p VJ=1.05) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=70.8m TT=60n) Ra 4 2 18m TC=0.O0416 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1200p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.53 CJO=1600p VJ=0.23) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB505B * *======================================================================= * * NDB505BE ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------- .SUBCKT NDB505BE 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.1*{-0.00232*TEMP+1.058}} KP={-0.018*TEMP+10.45} + THETA=0.056 VMAX=1.6E5 LEVEL=3) Cgs 1 3 621p Rd 20 4 12m TC=0.00416 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00088*TEMP+0.978}} M=0.33 CJO=459p VJ=1.05) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=70.8m TT=60n) Ra 4 2 18m TC=0.00416 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1200p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.53 CJO=1600p VJ=0.23) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB505BE * *======================================================================= * * NDP505BL ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------- .SUBCKT NDP505BL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={1.6*{-0.0032*TEMP+1.08}} KP={-0.025*TEMP+15.125} + THETA=0.086 VMAX=2.1E5 LEVEL=3) Cgs 1 3 734p Rd 20 4 6m TC=0.0056 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00088*TEMP+0.978}} M=0.35 CJO=537p VJ=1.16) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=70.8m TT=70n) Ra 4 2 22m TC=0.0056 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 2500p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=1600p VJ=0.104) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP505BL * *======================================================================= * * NDP505BEL ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------- .SUBCKT NDP505BEL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={1.6*{-0.0032*TEMP+1.08}} KP={-0.025*TEMP+15.125} + THETA=0.086 VMAX=2.1E5 LEVEL=3) Cgs 1 3 734p Rd 20 4 6m T=0.0056 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00088*TEMP+0.978}} M=0.35 CJO=537p VJ=1.16) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=70.8m TT=70n) Ra 4 2 22m TC=0.0056 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 2500p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=1600p VJ=0.104) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP505BEL * *======================================================================= * * NDB505BL ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------- .SUBCKT NDB505BL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={1.6*{-0.0032*TEMP+1.08}} KP={-0.025*TEMP+15.125} + THETA=0.086 VMAX=2.1E5 LEVEL=3) Cgs 1 3 734p Rd 20 4 6m TC=0.0056 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00088*TEMP+0.978}} M=0.35 CJO=537p VJ=1.16) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=70.8m TT=70n) Ra 4 2 22m TC=0.0056 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 2500p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=1600p VJ=0.104) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB505BL * *======================================================================= * * NDB505BEL ELECTRICAL MODEL (TO-263 N-Ch DMOS) * -------------------------- .SUBCKT NDB505BEL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={1.6*{-0.0032*TEMP+1.08}} KP={-0.025*TEMP+15.125} + THETA=0.086 VMAX=2.1E5 LEVEL=3) Cgs 1 3 734p Rd 20 4 6m TC=0.0056 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00088*TEMP+0.978}} M=0.35 CJO=537p VJ=1.16) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=70.8m TT=70n) Ra 4 2 22m TC=0.0056 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 2500p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=1600p VJ=0.104) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB505BEL * *======================================================================= * * NDP506A ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------ .SUBCKT NDP506A 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.1*{-0.00232*TEMP+1.058}} KP={-0.018*TEMP+10.45} + THETA=0.056 VMAX=1.6E5 LEVEL=3) Cgs 1 3 621p Rd 20 4 6.7m TC=0.00416 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.33 CJO=459p VJ=1.05) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=70.8m TT=60n) Ra 4 2 13.2m TC=0.00416 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1200p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.53 CJO=1600p VJ=0.23) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP506A * * * THERMAL MODEL OF NDP506A, NDP506AE, NDB506A, NDB506AE, * NDP506AL, NDP506AEL, NDB506AL, NDB506AEL, * NDP506B, NDP506BE, NDB506B, NDB506BE, * NDP506BL, NDP506BEL, NDB506BL, NDB506BEL, * --------------------------------------------------------- .SUBCKT 506THMAL 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tjc 100 40 VALUE = {V(80,40)*2.5*V(90,40)}; Tjc=Pave(t)*RJC*rjc(t) R100 100 40 1k R90 90 40 1k E_rjc 90 40 table {TIME} ; Normalized NDx506x Single Pulsed rjc(t) + (0.00001, 0.022853) + (0.000015, 0.02799) + (0.00002, 0.03232) + (0.00003, 0.039583) + (0.00004, 0.045707) + (0.00005, 0.051102) + (0.00007, 0.060465) + (0.0001, 0.072269) + (0.0002, 0.102204) + (0.000299, 0.125874) + (0.0004, 0.145186) + (0.0005, 0.161404) + (0.000698, 0.191381) + (0.001, 0.228536) + (0.0015, 0.279898) + (0.002001, 0.321014) + (0.002995, 0.383532) + (0.004, 0.43045) + (0.005, 0.466497) + (0.007019, 0.518902) + (0.01, 0.567218) + (0.01479, 0.614871) + (0.020815, 0.654644) + (0.030075, 0.693922) + (0.040382, 0.723533) + (0.049664, 0.742936) + (0.069676, 0.774638) + (0.100235, 0.808819) + (0.149725, 0.844508) + (0.199661, 0.869305) + (0.297795, 0.898022) + (0.398993, 0.91482) + (0.499729, 0.925716) + (0.700469, 0.940445) + (0.998995, 0.955408) + (1.5, 0.968511) + (1.99706, 0.975731) + (3, 0.984415) + (4, 0.989822) + (5, 0.992366) + (7, 0.994063) + (10, 1) .ENDS 506THMAL * *======================================================================= * * NDP506AE ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------- .SUBCKT NDP506AE 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.1*{-0.00232*TEMP+1.058}} KP={-0.018*TEMP+10.45} + THETA=0.056 VMAX=1.6E5 LEVEL=3) Cgs 1 3 621p Rd 20 4 6.7m TC=0.00416 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.33 CJO=459p VJ=1.05) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=70.8m TT=60n) Ra 4 2 13.2m TC=0.00416 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1200p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.53 CJO=1600p VJ=0.23) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP506AE * *======================================================================= * * NDB506A ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------ .SUBCKT NDB506A 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.1*{-0.00232*TEMP+1.058}} KP={-0.018*TEMP+10.45} + THETA=0.056 VMAX=1.6E5 LEVEL=3) Cgs 1 3 621p Rd 20 4 6.7m TC=0.00416 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.33 CJO=459p VJ=1.05) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=70.8m TT=60n) Ra 4 2 13.2m TC=0.00416 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1200p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.53 CJO=1600p VJ=0.23) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB506A * *======================================================================= * * NDB506AE ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------- .SUBCKT NDB506AE 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.1*{-0.00232*TEMP+1.058}} KP={-0.018*TEMP+10.45} + THETA=0.056 VMAX=1.6E5 LEVEL=3) Cgs 1 3 621p Rd 20 4 6.7m TC=0.00416 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.33 CJO=459p VJ=1.05) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=70.8m TT=60n) Ra 4 2 13.2m TC=0.O0416 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1200p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.53 CJO=1600p VJ=0.23) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB506AE * *======================================================================= * * NDP506AL ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------- .SUBCKT NDP506AL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={1.6*{-0.0032*TEMP+1.08}} KP={-0.025*TEMP+15.125} + THETA=0.086 VMAX=2.1E5 LEVEL=3) Cgs 1 3 734p Rd 20 4 3.5m TC=0.0056 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.35 CJO=537p VJ=1.16) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=70.8m TT=70n) Ra 4 2 14.9m TC=0.0056 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 2500p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=1600p VJ=0.104) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP506AL * *======================================================================= * * NDP506AEL ELECTRICAL MODEL (TO-220 N-Ch DMOS) * -------------------------- .SUBCKT NDP506AEL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={1.6*{-0.0032*TEMP+1.08}} KP={-0.025*TEMP+15.125} + THETA=0.086 VMAX=2.1E5 LEVEL=3) Cgs 1 3 734p Rd 20 4 3.5m TC=0.0056 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.35 CJO=537p VJ=1.16) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=70.8m TT=70n) Ra 4 2 14.9m TC=0.0056 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 2500p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=1600p VJ=0.104) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP506AEL * *======================================================================= * * NDB506AL ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------- .SUBCKT NDB506AL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={1.6*{-0.0032*TEMP+1.08}} KP={-0.025*TEMP+15.125} + THETA=0.086 VMAX=2.1E5 LEVEL=3) Cgs 1 3 734p Rd 20 4 3.5m TC=0.0056 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.35 CJO=537p VJ=1.16) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=70.8m TT=70n) Ra 4 2 14.9m TC=0.0056 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 2500p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=1600p VJ=0.104) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB506AL * *======================================================================= * * NDB506AEL ELECTRICAL MODEL (TO-263 N-Ch DMOS) * -------------------------- .SUBCKT NDB506AEL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={1.6*{-0.0032*TEMP+1.08}} KP={-0.025*TEMP+15.125} + THETA=0.086 VMAX=2.1E5 LEVEL=3) Cgs 1 3 734p Rd 20 4 3.5m TC=0.0056 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.35 CJO=537p VJ=1.16) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=70.8m TT=70n) Ra 4 2 14.9m TC=0.0056 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 2500p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=1600p VJ=0.104) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB506AEL * *======================================================================= * * NDP506B ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------ .SUBCKT NDP506B 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.1*{-0.00232*TEMP+1.058}} KP={-0.018*TEMP+10.45} + THETA=0.056 VMAX=1.6E5 LEVEL=3) Cgs 1 3 621p Rd 20 4 12m TC=0.00416 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.33 CJO=459p VJ=1.05) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=70.8m TT=60n) Ra 4 2 18m TC=0.00416 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1200p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.53 CJO=1600p VJ=0.23) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP506B * *======================================================================= * * NDP506BE ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------- .SUBCKT NDP506BE 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.1*{-0.00232*TEMP+1.058}} KP={-0.018*TEMP+10.45} + THETA=0.056 VMAX=1.6E5 LEVEL=3) Cgs 1 3 621p Rd 20 4 12m TC=0.00416 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.33 CJO=459p VJ=1.05) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=70.8m TT=60n) Ra 4 2 18m TC=0.00416 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1200p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.53 CJO=1600p VJ=0.23) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP506BE * *======================================================================= * * NDB506B ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------ .SUBCKT NDB506B 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.1*{-0.00232*TEMP+1.058}} KP={-0.018*TEMP+10.45} + THETA=0.056 VMAX=1.6E5 LEVEL=3) Cgs 1 3 621p Rd 20 4 12m TC=0.00416 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.33 CJO=459p VJ=1.05) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=70.8m TT=60n) Ra 4 2 18m TC=0.00416 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1200p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.53 CJO=1600p VJ=0.23) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB506B * *======================================================================= * * NDB506BE ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------- .SUBCKT NDB506BE 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.1*{-0.00232*TEMP+1.058}} KP={-0.018*TEMP+10.45} + THETA=0.056 VMAX=1.6E5 LEVEL=3) Cgs 1 3 621p Rd 20 4 12m TC=0.00416 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.33 CJO=459p VJ=1.05) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=70.8m TT=60n) Ra 4 2 18m TC=0.00416 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1200p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.53 CJO=1600p VJ=0.23) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB506BE * *======================================================================= * * NDP506BL ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------- .SUBCKT NDP506BL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={1.6*{-0.0032*TEMP+1.08}} KP={-0.025*TEMP+15.125} + THETA=0.086 VMAX=2.1E5 LEVEL=3) Cgs 1 3 734p Rd 20 4 6m TC=0.0056 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.35 CJO=537p VJ=1.16) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=70.8m TT=70n) Ra 4 2 22m TC=0.0056 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 2500p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=1600p VJ=0.104) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP506BL * *======================================================================= * * NDP506BEL ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------- .SUBCKT NDP506BEL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={1.6*{-0.0032*TEMP+1.08}} KP={-0.025*TEMP+15.125} + THETA=0.086 VMAX=2.1E5 LEVEL=3) Cgs 1 3 734p Rd 20 4 6m TC=0.0056 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.35 CJO=537p VJ=1.16) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=70.8m TT=70n) Ra 4 2 22m TC=0.0056 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 2500p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=1600p VJ=0.104) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP506BEL * *======================================================================= * * NDB506BL ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------- .SUBCKT NDB506BL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={1.6*{-0.0032*TEMP+1.08}} KP={-0.025*TEMP+15.125} + THETA=0.086 VMAX=2.1E5 LEVEL=3) Cgs 1 3 734p Rd 20 4 6m TC=0.0056 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.35 CJO=537p VJ=1.16) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=70.8m TT=70n) Ra 4 2 22m TC=0.0056 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 2500p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=1600p VJ=0.104) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB506BL * *======================================================================= * * NDB506BEL ELECTRICAL MODEL (TO-263 N-Ch DMOS) * -------------------------- .SUBCKT NDB506BEL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={1.6*{-0.0032*TEMP+1.08}} KP={-0.025*TEMP+15.125} + THETA=0.086 VMAX=2.1E5 LEVEL=3) Cgs 1 3 734p Rd 20 4 6m TC=0.0056 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.35 CJO=537p VJ=1.16) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=70.8m TT=70n) Ra 4 2 22m TC=0.0056 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 2500p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=1600p VJ=0.104) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB506BEL * *======================================================================= * NDB5060 ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------ .SUBCKT NDB5060 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.1*{-0.00232*TEMP+1.058}} KP={-0.018*TEMP+10.45} + THETA=0.056 VMAX=1.6E5 LEVEL=3) Cgs 1 3 621p Rd 20 4 6.7m TC=0.00416 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.33 CJO=459p VJ=1.05) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=70.8m TT=60n) Ra 4 2 13.2m TC=0.00416 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1200p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.53 CJO=1600p VJ=0.23) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB5060 * .SUBCKT 5060THM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tjc 100 40 VALUE = {V(80,40)*55*V(90,40)}; Tja=Pave(t)*RJA*rja(t) R100 100 40 1k R90 90 40 1k E_rjc 90 40 table {TIME} ;Normalized NDx5060 Single Pulsed rja(t) at standard size 2oz cu + ( 0.0001 , 0.000735429306857878287 ) + ( 0.0002 , 0.00165471594043022614 ) + ( 0.0003 , 0.00239014524728810443 ) + ( 0.0004 , 0.00312557455414598272 ) + ( 0.0005 , 0.003861003861003861 ) + ( 0.0006 , 0.00441257584114726972 ) + ( 0.0007 , 0.00496414782129067843 ) + ( 0.0008 , 0.00551571980143408715 ) + ( 0.0009 , 0.00606729178157749586 ) + ( 0.001 , 0.00753815039529325244 ) + ( 0.002 , 0.0110314396028681743 ) + ( 0.003 , 0.0134215848501562787 ) + ( 0.004 , 0.0152601581173009744 ) + ( 0.005 , 0.016731016731016731 ) + ( 0.006 , 0.0178341606913035484 ) + ( 0.007 , 0.0187534473248758963 ) + ( 0.008 , 0.0194888766317337746 ) + ( 0.009 , 0.0200404486118771833 ) + ( 0.01 , 0.0207758779187350616 ) + ( 0.02 , 0.0229821658393086965 ) + ( 0.03 , 0.0250045964331678617 ) + ( 0.04 , 0.0262915977201691487 ) + ( 0.05 , 0.0273947416804559662 ) + ( 0.06 , 0.0284978856407427836 ) + ( 0.07 , 0.0290494576208861923 ) + ( 0.08 , 0.0297848869277440706 ) + ( 0.09 , 0.0305203162346019489 ) + ( 0.1 , 0.0312557455414598272 ) + ( 0.2 , 0.0358521787093215665 ) + ( 0.3 , 0.0410001838573267145 ) + ( 0.4 , 0.0443096157381871668 ) + ( 0.5 , 0.0485383342526199669 ) + ( 0.6 , 0.0525831954403382975 ) + ( 0.7 , 0.0560764846479132193 ) + ( 0.8 , 0.0601213458356315499 ) + ( 0.9 , 0.0634307777164920022 ) + ( 1 , 0.0685787828644971502 ) + ( 2 , 0.0968928111785254643 ) + ( 3 , 0.120426548997977569 ) + ( 4 , 0.142121713550284979 ) + ( 5 , 0.160507446221731936 ) + ( 6 , 0.175583747012318441 ) + ( 7 , 0.192130906416620702 ) + ( 8 , 0.207207207207207207 ) + ( 9 , 0.222283507997793712 ) + ( 10 , 0.242323956609670895 ) + ( 20 , 0.356499356499356499 ) + ( 30 , 0.448428019856591285 ) + ( 40 , 0.526567383710240853 ) + ( 50 , 0.590549733406876264 ) + ( 60 , 0.643500643500643501 ) + ( 70 , 0.693693693693693694 ) + ( 80 , 0.735429306857878287 ) + ( 90 , 0.766133480419194705 ) + ( 100 , 0.810626953484096341 ) + ( 200 , 0.955506526935098364 ) + ( 300 , 1 ) .ENDS 5060THM *======================================================================= * * NDP508A ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------ .SUBCKT NDP508A 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.3*{-0.0024*TEMP+1.06}} KP={-0.017*TEMP+10.925} + THETA=0.056 VMAX=2E5 LEVEL=3) Cgs 1 3 650p Rd 20 4 18m TC=0.008 Dds 3 4 DDS .MODEL DDS D(BV={80*{0.00088*TEMP+0.976}} M=0.39 CJO=489p VJ=0.8) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=34.7m TT=52n) Ra 4 2 19m TC=0.008 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.58 CJO=2500p VJ=0.1046) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP508A * * THERMAL MODEL OF NDP508A, NDP508AE, NDB508A, NDB508AE, * NDP508B, NDP508BE, NDB508B, NDB508BE * -------------------------------------------------------- .SUBCKT 508THMAL 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tjc 100 40 VALUE={V(80,40)*2.5*V(90,40)}; Tjc=Pave(t)*RJC*rjc(t) R100 100 40 1k R90 90 40 1k E_rjc 90 40 table {TIME} ; Normalized NDx508x Single Pulsed rjc(t) + (0.00001, 0.022853) + (0.000015, 0.02799) + (0.00002, 0.03232) + (0.00003, 0.039583) + (0.00004, 0.045707) + (0.00005, 0.051102) + (0.00007, 0.060465) + (0.0001, 0.072269) + (0.0002, 0.102204) + (0.000299, 0.125874) + (0.0004, 0.145186) + (0.0005, 0.161404) + (0.000698, 0.191381) + (0.001, 0.228536) + (0.0015, 0.279898) + (0.002001, 0.321014) + (0.002995, 0.383532) + (0.004, 0.43045) + (0.005, 0.466497) + (0.007019, 0.518902) + (0.01, 0.567218) + (0.01479, 0.614871) + (0.020815, 0.654644) + (0.030075, 0.693922) + (0.040382, 0.723533) + (0.049664, 0.742936) + (0.069676, 0.774638) + (0.100235, 0.808819) + (0.149725, 0.844508) + (0.199661, 0.869305) + (0.297795, 0.898022) + (0.398993, 0.91482) + (0.499729, 0.925716) + (0.700469, 0.940445) + (0.998995, 0.955408) + (1.5, 0.968511) + (1.99706, 0.975731) + (3, 0.984415) + (4, 0.989822) + (5, 0.992366) + (7, 0.994063) + (10, 1) .ENDS 508THMAL * *======================================================================= * * NDP508AE ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------- .SUBCKT NDP508AE 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.3*{-0.0024*TEMP+1.06}} KP={-0.017*TEMP+10.925} + THETA=0.056 VMAX=2E5 LEVEL=3) Cgs 1 3 650p Rd 20 4 18m TC=0.008 Dds 3 4 DDS .MODEL DDS D(BV={80*{0.00096*TEMP+0.976}} M=0.39 CJO=489p VJ=0.8) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=34.7m TT=52n) Ra 4 2 19m TC=0.008 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.58 CJO=2500p VJ=0.1046) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP508AE * *======================================================================= * * NDB508A ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------ .SUBCKT NDB508A 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.3*{-0.0024*TEMP+1.06}} KP={-0.017*TEMP+10.925} + THETA=0.056 VMAX=2E5 LEVEL=3) Cgs 1 3 650p Rd 20 4 18m TC=0.008 Dds 3 4 DDS .MODEL DDS D(BV={80*{0.00096*TEMP+0.976}} M=0.39 CJO=489p VJ=0.8) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=34.7m TT=52n) Ra 4 2 19m TC=0.O08 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.58 CJO=2500p VJ=0.1046) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB508A * *======================================================================= * * NDB508AE ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------- .SUBCKT NDB508AE 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.3*{-0.0024*TEMP+1.06}} KP={-0.017*TEMP+10.925} + THETA=0.056 VMAX=2E5 LEVEL=3) Cgs 1 3 650p Rd 20 4 18m TC=0.008 Dds 3 4 DDS .MODEL DDS D(BV={80*{0.00096*TEMP+0.976}} M=0.39 CJO=489p VJ=0.8) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=34.7m TT=52n) Ra 4 2 19m TC=0.008 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.58 CJO=2500p VJ=0.1046) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB508AE * *======================================================================= * * NDP508B ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------ .SUBCKT NDP508B 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.3*{-0.0024*TEMP+1.06}} KP={-0.017*TEMP+10.925} + THETA=0.056 VMAX=2E5 LEVEL=3) Cgs 1 3 650p Rd 20 4 23m TC=0.008 Dds 3 4 DDS .MODEL DDS D(BV={80*{0.00096*TEMP+0.976}} M=0.39 CJO=489p VJ=0.8) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=34.7m TT=52n) Ra 4 2 24m TC=0.008 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.58 CJO=2500p VJ=0.1046) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP508B * *======================================================================= * * NDP508BE ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------- .SUBCKT NDP508BE 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.3*{-0.0024*TEMP+1.06}} KP={-0.017*TEMP+10.925} + THETA=0.056 VMAX=2E5 LEVEL=3) Cgs 1 3 650p Rd 20 4 23m TC=0.008 Dds 3 4 DDS .MODEL DDS D(BV={80*{0.00096*TEMP+0.976}} M=0.39 CJO=489p VJ=0.8) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=34.7m TT=52n) Ra 4 2 24m T=0.008 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.58 CJO=2500p VJ=0.1046) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP508BE * *======================================================================= * * NDB508B ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------ .SUBCKT NDB508B 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.3*{-0.0024*TEMP+1.06}} KP={-0.017*TEMP+10.925} + THETA=0.056 VMAX=2E5 LEVEL=3) Cgs 1 3 650p Rd 20 4 23m TC=0.008 Dds 3 4 DDS .MODEL DDS D(BV={80*{0.00096*TEMP+0.976}} M=0.39 CJO=489p VJ=0.8) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=34.7m TT=52n) Ra 4 2 24m TC=0.008 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.58 CJO=2500p VJ=0.1046) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB508B * *======================================================================= * * NDB508BE ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------- .SUBCKT NDB508BE 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.3*{-0.0024*TEMP+1.06}} KP={-0.017*TEMP+10.925} + THETA=0.056 VMAX=2E5 LEVEL=3) Cgs 1 3 650p Rd 20 4 23m TC=0.008 Dds 3 4 DDS .MODEL DDS D(BV={80*{0.00096*TEMP+0.976}} M=0.39 CJO=489p VJ=0.8) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=34.7m TT=52n) Ra 4 2 24m TC=0.008 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.58 CJO=2500p VJ=0.1046) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB508BE * *======================================================================= * *NDP603AL ELECTRICAL MODEL * ---------------------- .SUBCKT NDP603AL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.8*{-0.00336*TEMP+1.084}} KP={-0.03*TEMP+18.75} + THETA=0.086 VMAX=1.4E5 LEVEL=3) Cgs 1 3 800p Rd 20 4 2m TC=0.00424 Dds 3 4 DDS .MODEL DDS D(BV={30*{0.00068*TEMP+0.983}} M=0.377 CJO=1083p VJ=1.22) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=37.9m TT=55n) Ra 4 2 7m TC=0.00424 Rs 3 5 1m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1700p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.5 CJO=1700p VJ=0.193) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP603AL * * * THERMAL MODEL OF NDP603AL, NDB603AL * ------------------------------------ .SUBCKT 603ALTHM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tjc 100 40 VALUE = {V(80,40)*3*V(90,40)}; Tja=Pave(t)*RJA*rja(t) R100 100 40 1k ; where RJA=35 deg/W R90 90 40 1k E_rjc 90 40 table {TIME} ; Normalized NDP603AL Single Pulsed rjc(t) + (0.00001, 0.022853) + (0.000015, 0.02799) + (0.00002, 0.03232) + (0.00003, 0.039583) + (0.00004, 0.045707) + (0.00005, 0.051102) + (0.00007, 0.060465) + (0.0001, 0.072269) + (0.0002, 0.102204) + (0.000299, 0.125874) + (0.0004, 0.145186) + (0.0005, 0.161404) + (0.000698, 0.191381) + (0.001, 0.228536) + (0.0015, 0.279898) + (0.002001, 0.321014) + (0.002995, 0.383532) + (0.004, 0.43045) + (0.005, 0.466497) + (0.007019, 0.518902) + (0.01, 0.567218) + (0.01479, 0.614871) + (0.020815, 0.654644) + (0.030075, 0.693922) + (0.040382, 0.723533) + (0.049664, 0.742936) + (0.069676, 0.774638) + (0.100235, 0.808819) + (0.149725, 0.844508) + (0.199661, 0.869305) + (0.297795, 0.898022) + (0.398993, 0.91482) + (0.499729, 0.925716) + (0.700469, 0.940445) + (0.998995, 0.955408) + (1.5, 0.968511) + (1.99706, 0.975731) + (3, 0.984415) + (4, 0.989822) + (5, 0.992366) + (7, 0.994063) + (10, 1) .ENDS 603ALTHM * *======================================================================= * * NDP605A ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------ .SUBCKT NDP605A 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={3.4*{-0.00264*TEMP+1.066}} KP={-0.03*TEMP+20.25} + THETA=0.056 VMAX=1.4E5 LEVEL=3) Cgs 1 3 1154p Rd 20 4 2.65m TC=0.0065 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00088*TEMP+0.978}} M=0.377 CJO=1083p VJ=1.22) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=37.9m TT=55n) Ra 4 2 8.33m TC=0.0065 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 2100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.5 CJO=2653p VJ=0.193) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP605A * * * THERMAL MODEL OF NDP605A, NDP605AE, NDB605A, NDB605AE, * NDP605AL, NDP605AEL, NDB605AL, NDB605AEL, * NDP605B, NDP605BE, NDB605A, NDB605AE, * NDP605BL, NDP605BEL, NDB605BL, NDB605BEL * --------------------------------------------------------- .SUBCKT 605THMAL 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tjc 100 40 VALUE={V(80,40)*1.5*V(90,40)}; Tjc=Pave(t)*RJC*rjc(t) R100 100 40 1k R90 90 40 1k E_rjc 90 40 table {TIME} ; Normalized NDx605x Single Pulsed rjc(t) + (1e-005, 0.0156008) + (1.5e-005, 0.019107) + (2e-005, 0.0220629) + (3e-005, 0.0270214) + (4e-005, 0.0312016) + (5e-005, 0.0348845) + (7e-005, 0.0412759) + (0.0001, 0.0493341) + (0.00015, 0.0604217) + (0.0002, 0.069769) + (0.0003, 0.0854492) + (0.0004, 0.0986682) + (0.0005, 0.110314) + (0.0007, 0.130526) + (0.001, 0.156008) + (0.0015, 0.19107) + (0.002, 0.220629) + (0.00300068, 0.269488) + (0.004, 0.30695) + (0.00500875, 0.338816) + (0.007, 0.38417) + (0.0100302, 0.427714) + (0.015, 0.476191) + (0.0201171, 0.51115) + (0.0302385, 0.557729) + (0.0401603, 0.588408) + (0.0499347, 0.613516) + (0.0701816, 0.651838) + (0.0993117, 0.689666) + (0.150433, 0.734277) + (0.2, 0.766409) + (0.3, 0.814672) + (0.4, 0.848456) + (0.499014, 0.871326) + (0.694928, 0.901643) + (1, 0.929537) + (1.50854, 0.955371) + (1.99969, 0.970572) + (3.01226, 0.986282) + (4, 0.994209) + (4.98949, 0.997334) + (6.99375, 0.99942) + (10.009, 0.99942) .ENDS 605THMAL * *======================================================================= * * NDP605AE ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------- .SUBCKT NDP605AE 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={3.4*{-0.00264*TEMP+1.066}} KP={-0.03*TEMP+20.25} + THETA=0.056 VMAX=1.4E5 LEVEL=3) Cgs 1 3 1154p Rd 20 4 2.65m TC=0.0065 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00088*TEMP+0.978}} M=0.377 CJO=1083p VJ=1.22) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=37.9m TT=55n) Ra 4 2 8.33m TC=0.0065 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 2100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.5 CJO=2653p VJ=0.193) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP605AE * *======================================================================= * * NDB605A ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------ .SUBCKT NDB605A 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={3.4*{-0.00264*TEMP+1.066}} KP={-0.03*TEMP+20.25} + THETA=0.056 VMAX=1.4E5 LEVEL=3) Cgs 1 3 1154p Rd 20 4 2.65m TC=0.0065 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00088*TEMP+0.978}} M=0.377 CJO=1083p VJ=1.22) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=37.9m TT=55n) Ra 4 2 8.33m TC=0.0065 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 2100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.5 CJO=2653p VJ=0.193) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB605A * *======================================================================= * * NDB605AE ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------- .SUBCKT NDB605AE 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={3.4*{-0.00264*TEMP+1.066}} KP={-0.03*TEMP+20.25} + THETA=0.056 VMAX=1.4E5 LEVEL=3) Cgs 1 3 1154p Rd 20 4 2.65m TC=0.0065 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00088*TEMP+0.978}} M=0.377 CJO=1083p VJ=1.22) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=37.9m TT=55n) Ra 4 2 8.33m TC=0.0065 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 2100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.5 CJO=2653p VJ=0.193) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB605AE * *======================================================================= * * NDP605AL ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------- .SUBCKT NDP605AL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.4*{-0.0032*TEMP+1.08}} KP={-0.07*TEMP+31.75} + THETA=0.086 VMAX=2.3E5 LEVEL=3) Cgs 1 3 1200p Rd 20 4 3m TC=0.0052 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00072*TEMP+0.982}} M=0.36 CJO=986p VJ=1.21) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=41m TT=70n) Ra 4 2 7.4m TC=0.0052 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 4750p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=8000p VJ=0.07) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP605AL * *======================================================================= * * NDP605AEL ELECTRICAL MODEL (TO-220 N-Ch DMOS) * -------------------------- .SUBCKT NDP605AEL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.4*{-0.0032*TEMP+1.08}} KP={-0.07*TEMP+31.75} + THETA=0.086 VMAX=2.3E5 LEVEL=3) Cgs 1 3 1200p Rd 20 4 3m TC=0.0052 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00072*TEMP+0.982}} M=0.36 CJO=986p VJ=1.21) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=41m TT=70n) Ra 4 2 7.4m TC=0.0052 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 4750p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=8000p VJ=0.07) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP605AEL * *======================================================================= * * NDB605AL ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------- .SUBCKT NDB605AL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.4*{-0.0032*TEMP+1.08}} KP={-0.07*TEMP+31.75} + THETA=0.086 VMAX=2.3E5 LEVEL=3) Cgs 1 3 1200p Rd 20 4 3m TC=0.0052 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00072*TEMP+0.982}} M=0.36 CJO=986p VJ=1.21) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=41m TT=70n) Ra 4 2 7.4m TC=0.0052 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 4750p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=8000p VJ=0.07) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB605AL * *======================================================================= * * NDB605AEL ELECTRICAL MODEL (TO-263 N-Ch DMOS) * -------------------------- .SUBCKT NDB605AEL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.4*{-0.0032*TEMP+1.08}} KP={-0.07*TEMP+31.75} + THETA=0.086 VMAX=2.3E5 LEVEL=3) Cgs 1 3 1200p Rd 20 4 3m TC=0.0052 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00072*TEMP+0.982}} M=0.36 CJO=986p VJ=1.21) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=41m TT=70n) Ra 4 2 7.4m TC=0.0052 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 4750p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=8000p VJ=0.07) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB605AEL * *======================================================================= * * NDP605B ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------ .SUBCKT NDP605B 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={3.4*{-0.00264*TEMP+1.066}} KP={-0.03*TEMP+20.25} + THETA=0.056 VMAX=1.4E5 LEVEL=3) Cgs 1 3 1154p Rd 20 4 4m TC=0.0065 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00088*TEMP+0.978}} M=0.377 CJO=1083p VJ=1.22) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=37.9m TT=55n) Ra 4 2 10m TC=0.0065 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 2100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.5 CJO=2653p VJ=0.193) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP605B * *======================================================================= * * NDP605BE ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------- .SUBCKT NDP605BE 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={3.4*{-0.00264*TEMP+1.066}} KP={-0.03*TEMP+20.25} + THETA=0.056 VMAX=1.4E5 LEVEL=3) Cgs 1 3 1154p Rd 20 4 4m TC=0.0065 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00088*TEMP+0.978}} M=0.377 CJO=1083p VJ=1.22) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=37.9m TT=55n) Ra 4 2 10m TC=0.0065 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 2100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.5 CJO=2653p VJ=0.193) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP605BE * *======================================================================= * * NDB605B ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------ .SUBCKT NDB605B 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={3.4*{-0.00264*TEMP+1.066}} KP={-0.03*TEMP+20.25} + THETA=0.056 VMAX=1.4E5 LEVEL=3) Cgs 1 3 1154p Rd 20 4 4m TC=0.0065 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00088*TEMP+0.978}} M=0.377 CJO=1083p VJ=1.22) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=37.9m TT=55n) Ra 4 2 10m TC=0.0065 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 2100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.5 CJO=2653p VJ=0.193) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB605B * *======================================================================= * * NDB605BE ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------- .SUBCKT NDB605BE 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={3.4*{-0.00264*TEMP+1.066}} KP={-0.07*TEMP+31.75} + THETA=0.056 VMAX=1.4E5 LEVEL=3) Cgs 1 3 1154p Rd 20 4 4m TC=0.0065 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00088*TEMP+0.978}} M=0.377 CJO=1083p VJ=1.22) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=37.9m TT=55n) Ra 4 2 10m TC=0.0065 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 2100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.5 CJO=2653p VJ=0.193) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB605BE * *======================================================================= * * NDP605BL ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------- .SUBCKT NDP605BL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.4*{-0.0032*TEMP+1.08}} KP={-0.07*TEMP+31.75} + THETA=0.086 VMAX=2.3E5 LEVEL=3) Cgs 1 3 1200p Rd 20 4 4.5m TC=0.0052 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00072*TEMP+0.982}} M=0.36 CJO=986p VJ=1.21) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=41m TT=70n) Ra 4 2 9.5m TC=0.0052 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 4750p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=8000p VJ=0.07) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP605BL * *======================================================================= * * NDP605BEL ELECTRICAL MODEL (TO-220 N-Ch DMOS) * -------------------------- .SUBCKT NDP605BEL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.4*{-0.0032*TEMP+1.08}} KP={-0.07*TEMP+31.75} + THETA=0.086 VMAX=2.3E5 LEVEL=3) Cgs 1 3 1200p Rd 20 4 4.5m TC=0.0052 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00072*TEMP+0.982}} M=0.36 CJO=986p VJ=1.21) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=41m TT=70n) Ra 4 2 9.5m TC=0.0052 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 4750p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=8000p VJ=0.07) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP605BEL * *======================================================================= * * NDB605BL ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------- .SUBCKT NDB605BL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.4*{-0.0032*TEMP+1.08}} KP={-0.07*TEMP+31.75} + THETA=0.086 VMAX=2.3E5 LEVEL=3) Cgs 1 3 1200p Rd 20 4 4.5m TC=0.0052 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00072*TEMP+0.982}} M=0.36 CJO=986p VJ=1.21) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=41m TT=70n) Ra 4 2 9.5m TC=0.0052 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 4750p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=8000p VJ=0.07) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB605BL * *======================================================================= * * NDB605BEL ELECTRICAL MODEL (TO-263 N-Ch DMOS) * -------------------------- .SUBCKT NDB605BEL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.4*{-0.0032*TEMP+1.08}} KP={-0.07*TEMP+31.75} + THETA=0.086 VMAX=2.3E5 LEVEL=3) Cgs 1 3 1200p Rd 20 4 4.5m TC=0.0052 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00072*TEMP+0.982}} M=0.36 CJO=986p VJ=1.21) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=41m TT=70n) Ra 4 2 9.5m TC=0.0052 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 4750p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=8000p VJ=0.07) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB605BEL * *======================================================================= * * NDP606A ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------ .SUBCKT NDP606A 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={3.4*{-0.00264*TEMP+1.066}} KP={-0.03*TEMP+20.25} + THETA=0.056 VMAX=1.4E5 LEVEL=3) Cgs 1 3 1154p Rd 20 4 2.65m TC=0.0065 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.377 CJO=1083p VJ=1.22) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=37.9m TT=55n) Ra 4 2 8.33m TC=0.0065 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 2100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.5 CJO=2653p VJ=0.193) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP606A * * * THERMAL MODEL OF NDP606A, NDP606AE, NDB606A, NDB606AE, * NDP606AL, NDP606AEL, NDB606AL, NDB606AEL, * NDP606B, NDP606BE, NDB606A, NDB606AE, * NDP606BL, NDP606BEL, NDB606BL, NDB606BEL * --------------------------------------------------------- .SUBCKT 606THMAL 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tjc 100 40 VALUE = {V(80,40)*1.5*V(90,40)}; Tjc=Pave(t)*RJC*rjc(t) R100 100 40 1k R90 90 40 1k E_rjc 90 40 table {TIME} ; Normalized NDx606x Single Pulsed rjc(t) + (1e-005, 0.0156008) + (1.5e-005, 0.019107) + (2e-005, 0.0220629) + (3e-005, 0.0270214) + (4e-005, 0.0312016) + (5e-005, 0.0348845) + (7e-005, 0.0412759) + (0.0001, 0.0493341) + (0.00015, 0.0604217) + (0.0002, 0.069769) + (0.0003, 0.0854492) + (0.0004, 0.0986682) + (0.0005, 0.110314) + (0.0007, 0.130526) + (0.001, 0.156008) + (0.0015, 0.19107) + (0.002, 0.220629) + (0.00300068, 0.269488) + (0.004, 0.30695) + (0.00500875, 0.338816) + (0.007, 0.38417) + (0.0100302, 0.427714) + (0.015, 0.476191) + (0.0201171, 0.51115) + (0.0302385, 0.557729) + (0.0401603, 0.588408) + (0.0499347, 0.613516) + (0.0701816, 0.651838) + (0.0993117, 0.689666) + (0.150433, 0.734277) + (0.2, 0.766409) + (0.3, 0.814672) + (0.4, 0.848456) + (0.499014, 0.871326) + (0.694928, 0.901643) + (1, 0.929537) + (1.50854, 0.955371) + (1.99969, 0.970572) + (3.01226, 0.986282) + (4, 0.994209) + (4.98949, 0.997334) + (6.99375, 0.99942) + (10.009, 0.99942) .ENDS 606THMAL * *======================================================================= * * NDP606AE ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------- .SUBCKT NDP606AE 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={3.4*{-0.00264*TEMP+1.066}} KP={-0.03*TEMP+20.25} + THETA=0.056 VMAX=1.4E5 LEVEL=3) Cgs 1 3 1154p Rd 20 4 2.65m TC=0.0065 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.377 CJO=1083p VJ=1.22) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=37.9m TT=55n) Ra 4 2 8.33m TC=0.0065 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 2100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.5 CJO=2653p VJ=0.193) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP606AE * *======================================================================= * * NDB606A ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------ .SUBCKT NDB606A 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={3.4*{-0.00264*TEMP+1.066}} KP={-0.03*TEMP+20.25} + THETA=0.056 VMAX=1.4E5 LEVEL=3) Cgs 1 3 1154p Rd 20 4 2.65m TC=0.0065 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.377 CJO=1083p VJ=1.22) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=37.9m TT=55n) Ra 4 2 8.33m TC=0.0065 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 2100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.5 CJO=2653p VJ=0.193) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB606A * *======================================================================= * * NDB606AE ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------- .SUBCKT NDB606AE 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={3.4*{-0.00264*TEMP+1.066}} KP={-0.03*TEMP+20.25} + THETA=0.056 VMAX=1.4E5 LEVEL=3) Cgs 1 3 1154p Rd 20 4 2.65m TC=0.0065 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.377 CJO=1083p VJ=1.22) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=37.9m TT=55n) Ra 4 2 8.33m TC=0.O065 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 2100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.5 CJO=2653p VJ=0.193) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB606AE * *======================================================================= * * NDP606AL ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------- .SUBCKT NDP606AL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.4*{-0.0032*TEMP+1.08}} KP={-0.07*TEMP+31.75} + THETA=0.086 VMAX=2.3E5 LEVEL=3) Cgs 1 3 1200p Rd 20 4 3m TC=0.0052 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00072*TEMP+0.982}} M=0.36 CJO=986p VJ=1.21) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=41m TT=70n) Ra 4 2 7.4m TC=0.0052 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 4750p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=8000p VJ=0.07) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP606AL * *======================================================================= * * NDP606AEL ELECTRICAL MODEL (TO-220 N-Ch DMOS) * -------------------------- .SUBCKT NDP606AEL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.4*{-0.0032*TEMP+1.08}} KP={-0.07*TEMP+31.75} + THETA=0.086 VMAX=2.3E5 LEVEL=3) Cgs 1 3 1200p Rd 20 4 3m TC=0.0052 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00072*TEMP+0.982}} M=0.36 CJO=986p VJ=1.21) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=41m TT=70n) Ra 4 2 7.4m TC=0.0052 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 4750p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=8000p VJ=0.07) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP606AEL * *======================================================================= * * NDB606AL ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------- .SUBCKT NDB606AL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.4*{-0.0032*TEMP+1.08}} KP={-0.07*TEMP+31.75} + THETA=0.086 VMAX=2.3E5 LEVEL=3) Cgs 1 3 1200p Rd 20 4 3m TC=0.0052 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00072*TEMP+0.982}} M=0.36 CJO=986p VJ=1.21) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=41m TT=70n) Ra 4 2 7.4m TC=0.0052 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 4750p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=8000p VJ=0.07) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB606AL * *======================================================================= * * NDB606AEL ELECTRICAL MODEL (TO-263 N-Ch DMOS) * -------------------------- .SUBCKT NDB606AEL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.4*{-0.0032*TEMP+1.08}} KP={-0.07*TEMP+31.75} + THETA=0.086 VMAX=2.3E5 LEVEL=3) Cgs 1 3 1200p Rd 20 4 3m TC=0.0052 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00072*TEMP+0.982}} M=0.36 CJO=986p VJ=1.21) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=41m TT=70n) Ra 4 2 7.4m TC=0.0052 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 4750p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=8000p VJ=0.07) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB606AEL * *======================================================================= * * NDP606B ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------ .SUBCKT NDP606B 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={3.4*{-0.00264*TEMP+1.066}} KP={-0.03*TEMP+20.25} + THETA=0.056 VMAX=1.4E5 LEVEL=3) Cgs 1 3 1154p Rd 20 4 4m T=0.0065 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.377 CJO=1083p VJ=1.22) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=37.9m TT=55n) Ra 4 2 10m TC=0.0065 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 2100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.5 CJO=2653p VJ=0.193) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP606B * *======================================================================= * * NDP606BE ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------- .SUBCKT NDP606BE 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={3.4*{-0.00264*TEMP+1.066}} KP={-0.03*TEMP+20.25} + THETA=0.056 VMAX=1.4E5 LEVEL=3) Cgs 1 3 1154p Rd 20 4 4m TC=0.0065 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.377 CJO=1083p VJ=1.22) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=37.9m TT=55n) Ra 4 2 10m T=0.0065 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 2100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.5 CJO=2653p VJ=0.193) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP606BE * *======================================================================= * * NDB606B ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------ .SUBCKT NDB606B 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={3.4*{-0.00264*TEMP+1.066}} KP={-0.03*TEMP+20.25} + THETA=0.056 VMAX=1.4E5 LEVEL=3) Cgs 1 3 1154p Rd 20 4 4m TC=0.0065 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.377 CJO=1083p VJ=1.22) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=37.9m TT=55n) Ra 4 2 10m TC=0.0065 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 2100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.5 CJO=2653p VJ=0.193) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB606B * *======================================================================= * * NDB606BE ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------- .SUBCKT NDB606BE 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={3.4*{-0.00264*TEMP+1.066}} KP={-0.03*TEMP+20.25} + THETA=0.056 VMAX=1.4E5 LEVEL=3) Cgs 1 3 1154p Rd 20 4 4m TC=0.0065 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.377 CJO=1083p VJ=1.22) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=37.9m TT=55n) Ra 4 2 10m TC=0.0065 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 2100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.5 CJO=2653p VJ=0.193) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB606BE * *======================================================================= * * NDP606BL ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------- .SUBCKT NDP606BL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.4*{-0.0032*TEMP+1.08}} KP={-0.07*TEMP+31.75} + THETA=0.086 VMAX=2.3E5 LEVEL=3) Cgs 1 3 1200p Rd 20 4 4.5m TC=0.0052 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00072*TEMP+0.982}} M=0.36 CJO=986p VJ=1.21) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=41m TT=70n) Ra 4 2 9m TC=0.0052 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 4750p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=8000p VJ=0.07) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP606BL *======================================================================= * * NDP606BEL ELECTRICAL MODEL (TO-220 N-Ch DMOS) * -------------------------- .SUBCKT NDP606BEL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.4*{-0.0032*TEMP+1.08}} KP={-0.07*TEMP+31.75} + THETA=0.086 VMAX=2.3E5 LEVEL=3) Cgs 1 3 1200p Rd 20 4 4.5m TC=0.0052 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00072*TEMP+0.982}} M=0.36 CJO=986p VJ=1.21) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=41m TT=70n) Ra 4 2 9m TC=0.0052 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 4750p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=8000p VJ=0.07) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP606BEL * *======================================================================= * * NDB606BL ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------- .SUBCKT NDB606BL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.4*{-0.0032*TEMP+1.08}} KP={-0.07*TEMP+31.75} + THETA=0.086 VMAX=2.3E5 LEVEL=3) Cgs 1 3 1200p Rd 20 4 4.5m TC=0.0052 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00072*TEMP+0.982}} M=0.36 CJO=986p VJ=1.21) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=41m TT=70n) Ra 4 2 9m TC=0.0052 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 4750p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=8000p VJ=0.07) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB606BL * *======================================================================= * * NDB606BEL ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------- .SUBCKT NDB606BEL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.4*{-0.0032*TEMP+1.08}} KP={-0.07*TEMP+31.75} + THETA=0.086 VMAX=2.3E5 LEVEL=3) Cgs 1 3 1200p Rd 20 4 4.5m TC=0.0052 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00072*TEMP+0.982}} M=0.36 CJO=986p VJ=1.21) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=41m TT=70n) Ra 4 2 9m TC=0.0052 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 4750p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=8000p VJ=0.07) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB606BEL * * NDB6060 ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------ .SUBCKT NDB6060 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={3.4*{-0.00264*TEMP+1.066}} KP={-0.03*TEMP+20.25} + THETA=0.056 VMAX=1.4E5 LEVEL=3) Cgs 1 3 1154p Rd 20 4 2.65m TC=0.0065 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.377 CJO=1083p VJ=1.22) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=37.9m TT=55n) Ra 4 2 8.33m TC=0.0065 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 2100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.5 CJO=2653p VJ=0.193) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB6060 * * .SUBCKT 6060THM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tjc 100 40 VALUE = {V(80,40)*1.5*V(90,40)}; Tjc=Pave(t)*RJC*rjc(t) R100 100 40 1k R90 90 40 1k E_rjc 90 40 table {TIME} ; Normalized NDx6060 Single Pulsed rjc(t) + (1e-005, 0.0156008) + (1.5e-005, 0.019107) + (2e-005, 0.0220629) + (3e-005, 0.0270214) + (4e-005, 0.0312016) + (5e-005, 0.0348845) + (7e-005, 0.0412759) + (0.0001, 0.0493341) + (0.00015, 0.0604217) + (0.0002, 0.069769) + (0.0003, 0.0854492) + (0.0004, 0.0986682) + (0.0005, 0.110314) + (0.0007, 0.130526) + (0.001, 0.156008) + (0.0015, 0.19107) + (0.002, 0.220629) + (0.00300068, 0.269488) + (0.004, 0.30695) + (0.00500875, 0.338816) + (0.007, 0.38417) + (0.0100302, 0.427714) + (0.015, 0.476191) + (0.0201171, 0.51115) + (0.0302385, 0.557729) + (0.0401603, 0.588408) + (0.0499347, 0.613516) + (0.0701816, 0.651838) + (0.0993117, 0.689666) + (0.150433, 0.734277) + (0.2, 0.766409) + (0.3, 0.814672) + (0.4, 0.848456) + (0.499014, 0.871326) + (0.694928, 0.901643) + (1, 0.929537) + (1.50854, 0.955371) + (1.99969, 0.970572) + (3.01226, 0.986282) + (4, 0.994209) + (4.98949, 0.997334) + (6.99375, 0.99942) + (10.009, 0.99942) .ENDS 6060THM * NDB6060L ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------- .SUBCKT NDB6060L 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.4*{-0.0032*TEMP+1.08}} KP={-0.07*TEMP+31.75} + THETA=0.086 VMAX=2.3E5 LEVEL=3) Cgs 1 3 1200p Rd 20 4 3m TC=0.0052 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00072*TEMP+0.982}} M=0.36 CJO=986p VJ=1.21) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=41m TT=70n) Ra 4 2 7.4m TC=0.0052 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 4750p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=8000p VJ=0.07) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB6060L * .SUBCKT 6060LTHM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tjc 100 40 VALUE = {V(80,40)*1.5*V(90,40)}; Tjc=Pave(t)*RJC*rjc(t) R100 100 40 1k R90 90 40 1k E_rjc 90 40 table {TIME} ; Normalized NDx6060L Single Pulsed rjc(t) + (1e-005, 0.0156008) + (1.5e-005, 0.019107) + (2e-005, 0.0220629) + (3e-005, 0.0270214) + (4e-005, 0.0312016) + (5e-005, 0.0348845) + (7e-005, 0.0412759) + (0.0001, 0.0493341) + (0.00015, 0.0604217) + (0.0002, 0.069769) + (0.0003, 0.0854492) + (0.0004, 0.0986682) + (0.0005, 0.110314) + (0.0007, 0.130526) + (0.001, 0.156008) + (0.0015, 0.19107) + (0.002, 0.220629) + (0.00300068, 0.269488) + (0.004, 0.30695) + (0.00500875, 0.338816) + (0.007, 0.38417) + (0.0100302, 0.427714) + (0.015, 0.476191) + (0.0201171, 0.51115) + (0.0302385, 0.557729) + (0.0401603, 0.588408) + (0.0499347, 0.613516) + (0.0701816, 0.651838) + (0.0993117, 0.689666) + (0.150433, 0.734277) + (0.2, 0.766409) + (0.3, 0.814672) + (0.4, 0.848456) + (0.499014, 0.871326) + (0.694928, 0.901643) + (1, 0.929537) + (1.50854, 0.955371) + (1.99969, 0.970572) + (3.01226, 0.986282) + (4, 0.994209) + (4.98949, 0.997334) + (6.99375, 0.99942) + (10.009, 0.99942) .ENDS 6060LTHM * * NDP6060 ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------ .SUBCKT NDP6060 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={3.4*{-0.00264*TEMP+1.066}} KP={-0.03*TEMP+20.25} + THETA=0.056 VMAX=1.4E5 LEVEL=3) Cgs 1 3 1154p Rd 20 4 2.65m TC=0.0065 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.377 CJO=1083p VJ=1.22) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=37.9m TT=55n) Ra 4 2 8.33m TC=0.0065 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 2100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.5 CJO=2653p VJ=0.193) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP6060 * * .SUBCKT 6060THM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tjc 100 40 VALUE = {V(80,40)*1.5*V(90,40)}; Tjc=Pave(t)*RJC*rjc(t) R100 100 40 1k R90 90 40 1k E_rjc 90 40 table {TIME} ; Normalized NDx6060 Single Pulsed rjc(t) + (1e-005, 0.0156008) + (1.5e-005, 0.019107) + (2e-005, 0.0220629) + (3e-005, 0.0270214) + (4e-005, 0.0312016) + (5e-005, 0.0348845) + (7e-005, 0.0412759) + (0.0001, 0.0493341) + (0.00015, 0.0604217) + (0.0002, 0.069769) + (0.0003, 0.0854492) + (0.0004, 0.0986682) + (0.0005, 0.110314) + (0.0007, 0.130526) + (0.001, 0.156008) + (0.0015, 0.19107) + (0.002, 0.220629) + (0.00300068, 0.269488) + (0.004, 0.30695) + (0.00500875, 0.338816) + (0.007, 0.38417) + (0.0100302, 0.427714) + (0.015, 0.476191) + (0.0201171, 0.51115) + (0.0302385, 0.557729) + (0.0401603, 0.588408) + (0.0499347, 0.613516) + (0.0701816, 0.651838) + (0.0993117, 0.689666) + (0.150433, 0.734277) + (0.2, 0.766409) + (0.3, 0.814672) + (0.4, 0.848456) + (0.499014, 0.871326) + (0.694928, 0.901643) + (1, 0.929537) + (1.50854, 0.955371) + (1.99969, 0.970572) + (3.01226, 0.986282) + (4, 0.994209) + (4.98949, 0.997334) + (6.99375, 0.99942) + (10.009, 0.99942) .ENDS 6060THM * NDP6060L ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------- .SUBCKT NDP6060L 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.4*{-0.0032*TEMP+1.08}} KP={-0.07*TEMP+31.75} + THETA=0.086 VMAX=2.3E5 LEVEL=3) Cgs 1 3 1200p Rd 20 4 3m TC=0.0052 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00072*TEMP+0.982}} M=0.36 CJO=986p VJ=1.21) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=41m TT=70n) Ra 4 2 7.4m TC=0.0052 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 4750p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=8000p VJ=0.07) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP6060L * .SUBCKT 6060LTHM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tjc 100 40 VALUE = {V(80,40)*1.5*V(90,40)}; Tjc=Pave(t)*RJC*rjc(t) R100 100 40 1k R90 90 40 1k E_rjc 90 40 table {TIME} ; Normalized NDx6060L Single Pulsed rjc(t) + (1e-005, 0.0156008) + (1.5e-005, 0.019107) + (2e-005, 0.0220629) + (3e-005, 0.0270214) + (4e-005, 0.0312016) + (5e-005, 0.0348845) + (7e-005, 0.0412759) + (0.0001, 0.0493341) + (0.00015, 0.0604217) + (0.0002, 0.069769) + (0.0003, 0.0854492) + (0.0004, 0.0986682) + (0.0005, 0.110314) + (0.0007, 0.130526) + (0.001, 0.156008) + (0.0015, 0.19107) + (0.002, 0.220629) + (0.00300068, 0.269488) + (0.004, 0.30695) + (0.00500875, 0.338816) + (0.007, 0.38417) + (0.0100302, 0.427714) + (0.015, 0.476191) + (0.0201171, 0.51115) + (0.0302385, 0.557729) + (0.0401603, 0.588408) + (0.0499347, 0.613516) + (0.0701816, 0.651838) + (0.0993117, 0.689666) + (0.150433, 0.734277) + (0.2, 0.766409) + (0.3, 0.814672) + (0.4, 0.848456) + (0.499014, 0.871326) + (0.694928, 0.901643) + (1, 0.929537) + (1.50854, 0.955371) + (1.99969, 0.970572) + (3.01226, 0.986282) + (4, 0.994209) + (4.98949, 0.997334) + (6.99375, 0.99942) + (10.009, 0.99942) .ENDS 6060LTHM * *======================================================================= * * NDP608A ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------ .SUBCKT NDP608A 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={2.9*{-0.00256*TEMP+1.064}} KP={-0.042*TEMP+21.05} + THETA=0.056 VMAX=1.2E5 LEVEL=3) Cgs 1 3 1249p Rd 20 4 12m TC=0.0068 Dds 3 4 DDS .MODEL DDS D(BV={80*{0.0008*TEMP+0.98}} M=0.386 CJO=851p VJ=1.32) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=5m TT=61n) Ra 4 2 10.2m TC=0.0068 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 2100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.57 CJO=3000p VJ=0.115) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP608A * * * THERMAL MODEL OF NDP608A, NDP608AE, NDB608A, NDB608AE, * NDP608B, NDP608BE, NDB608B, NDP608BE * ----------------------------------------------------- .SUBCKT 608THMAL 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tjc 100 40 VALUE = {V(80,40)*1.5*V(90,40)}; Tjc=Pave(t)*RJC*rjc(t) R100 100 40 1k R90 90 40 1k E_rjc 90 40 table {TIME} ; Normalized NDx608x Single Pulsed rjc(t) + (1e-005, 0.0156008) + (1.5e-005, 0.019107) + (2e-005, 0.0220629) + (3e-005, 0.0270214) + (4e-005, 0.0312016) + (5e-005, 0.0348845) + (7e-005, 0.0412759) + (0.0001, 0.0493341) + (0.00015, 0.0604217) + (0.0002, 0.069769) + (0.0003, 0.0854492) + (0.0004, 0.0986682) + (0.0005, 0.110314) + (0.0007, 0.130526) + (0.001, 0.156008) + (0.0015, 0.19107) + (0.002, 0.220629) + (0.00300068, 0.269488) + (0.004, 0.30695) + (0.00500875, 0.338816) + (0.007, 0.38417) + (0.0100302, 0.427714) + (0.015, 0.476191) + (0.0201171, 0.51115) + (0.0302385, 0.557729) + (0.0401603, 0.588408) + (0.0499347, 0.613516) + (0.0701816, 0.651838) + (0.0993117, 0.689666) + (0.150433, 0.734277) + (0.2, 0.766409) + (0.3, 0.814672) + (0.4, 0.848456) + (0.499014, 0.871326) + (0.694928, 0.901643) + (1, 0.929537) + (1.50854, 0.955371) + (1.99969, 0.970572) + (3.01226, 0.986282) + (4, 0.994209) + (4.98949, 0.997334) + (6.99375, 0.99942) + (10.009, 0.99942) .ENDS 608THMAL * *======================================================================= * * NDP608AE ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------- .SUBCKT NDP608AE 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={2.9*{-0.00256*TEMP+1.064}} KP={-0.042*TEMP+21.05} + THETA=0.056 VMAX=1.2E5 LEVEL=3) Cgs 1 3 1249p Rd 20 4 12m TC=0.0068 Dds 3 4 DDS .MODEL DDS D(BV={80*{0.0008*TEMP+0.98}} M=0.386 CJO=851p VJ=1.32) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=5m TT=61n) Ra 4 2 10.2m TC=0.068 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 2100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.57 CJO=3000p VJ=0.115) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP608AE * *======================================================================= * * NDB608A ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------- .SUBCKT NDB608A 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={2.9*{-0.00256*TEMP+1.064}} KP={-0.042*TEMP+21.05} + THETA=0.056 VMAX=1.2E5 LEVEL=3) Cgs 1 3 1249p Rd 20 4 12m TC=0.0068 Dds 3 4 DDS .MODEL DDS D(BV={80*{0.0008*TEMP+0.98}} M=0.386 CJO=851p VJ=1.32) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=5m TT=61n) Ra 4 2 10.2m TC=0.0068 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 2100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.57 CJO=3000p VJ=0.115) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB608A * *======================================================================= * * NDB608AE ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------- .SUBCKT NDB608AE 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={2.9*{-0.00256*TEMP+1.064}} KP={-0.042*TEMP+21.05} + THETA=0.056 VMAX=1.2E5 LEVEL=3) Cgs 1 3 1249p Rd 20 4 12m TC=0.0068 Dds 3 4 DDS .MODEL DDS D(BV={80*{0.0008*TEMP+0.98}} M=0.386 CJO=851p VJ=1.32) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=5m TT=61n) Ra 4 2 10.2m TC=0.0068 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 2100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.57 CJO=3000p VJ=0.115) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB608AE * *======================================================================= * * NDP608B ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------ .SUBCKT NDP608B 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={2.9*{-0.00256*TEMP+1.064}} KP={-0.042*TEMP+21.05} + THETA=0.056 VMAX=1.2E5 LEVEL=3) Cgs 1 3 1249p Rd 20 4 15m TC=0.0068 Dds 3 4 DDS .MODEL DDS D(BV={80*{0.0008*TEMP+0.98}} M=0.386 CJO=851p VJ=1.32) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=5m TT=61n) Ra 4 2 12m TC=0.0068 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 2100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.57 CJO=3000p VJ=0.115) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP608B * *======================================================================= * * NDP608BE ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------- .SUBCKT NDP608BE 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={2.9*{-0.00256*TEMP+1.064}} KP={-0.042*TEMP+21.05} + THETA=0.056 VMAX=1.2E5 LEVEL=3) Cgs 1 3 1249p Rd 20 4 15m TC=0.0068 Dds 3 4 DDS .MODEL DDS D(BV={80*{0.0008*TEMP+0.98}} M=0.386 CJO=851p VJ=1.32) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=5m TT=61n) Ra 4 2 12m TC=0.0068 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 2100p 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.57 CJO=3000p VJ=0.115) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP608BE * *======================================================================= * * NDB608B ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------ .SUBCKT NDB608B 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={2.9*{-0.00256*TEMP+1.064}} KP={-0.042*TEMP+21.05} + THETA=0.056 VMAX=1.2E5 LEVEL=3) Cgs 1 3 1249p Rd 20 4 15m TC=0.0068 Dds 3 4 DDS .MODEL DDS D(BV={80*{0.0008*TEMP+0.98}} M=0.386 CJO=851p VJ=1.32) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=5m TT=61n) Ra 4 2 12m TC=0.0068 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 2100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.57 CJO=3000p VJ=0.115) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB608B * *======================================================================= * * NDB608BE ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------- .SUBCKT NDB608BE 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={2.9*{-0.00256*TEMP+1.064}} KP={-0.042*TEMP+21.05} + THETA=0.056 VMAX=1.2E5 LEVEL=3) Cgs 1 3 1249p Rd 20 4 15m TC=0.0068 Dds 3 4 DDS .MODEL DDS D(BV={80*{0.0008*TEMP+0.98}} M=0.386 CJO=851p VJ=1.32) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=5m TT=61n) Ra 4 2 12m TC=0.0068 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 2100p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.57 CJO=3000p VJ=0.115) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB608BE * *======================================================================= * * NDP705A ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------ .SUBCKT NDP705A 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={3.1*{-0.00272*TEMP+1.068}} KP={-0.06*TEMP+31.5} + THETA=0.056 VMAX=1.4E5 LEVEL=3) Cgs 1 3 2200p Rd 20 4 2.07m T=0.00576 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.0008*TEMP+0.98}} M=0.38 CJO=2234p VJ=0.9) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=4.3m TT=80n) Ra 4 2 3.8m TC=0.00576 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 4500p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.53 CJO=6400p VJ=0.19) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP705A * * * THERMAL MODEL OF NDP705A, NDP705AE, NDB705A, NDB705AE, * NDP705AL, NDP705AEL, NDB705AL, NDB705AEL, * NDP705B, NDP705BE, NDB705B, NDB705BE, * NDP705BL, NDP705BEL, NDB705BL, NDB705BEL * --------------------------------------------------------- .SUBCKT 705THMAL 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tjc 100 40 VALUE = {V(80,40)*1*V(90,40)}; Tjc=Pave(t)*RJC*rjc(t) R100 100 40 1k R90 90 40 1k E_rjc 90 40 table {TIME} ; Normalized NDx705x Single Pulsed rjc(t) + (0.000010, 0.012425) + (0.000015, 0.015218) + (0.000020, 0.017572) + (0.000030, 0.021521) + (0.000040, 0.024851) + (0.000050, 0.027784) + (0.000070, 0.032874) + (0.000100, 0.039292) + (0.000200, 0.055568) + (0.000300, 0.068056) + (0.000400, 0.078585) + (0.000500, 0.087860) + (0.000700, 0.103958) + (0.001000, 0.124253) + (0.001500, 0.152179) + (0.002000, 0.175721) + (0.003000, 0.215213) + (0.004000, 0.246135) + (0.005000, 0.271284) + (0.007000, 0.308802) + (0.010000, 0.335498) + (0.015000, 0.385281) + (0.020000, 0.417316) + (0.030000, 0.475758) + (0.040000, 0.513766) + (0.050000, 0.541558) + (0.070000, 0.603247) + (0.100000, 0.667532) + (0.200000, 0.781818) + (0.300000, 0.845887) + (0.400000, 0.888312) + (1.000000, 0.931818) + (1.500000, 0.942641) + (2.000000, 0.951299) + (3.000000, 0.970779) .ENDS 705THMAL * *======================================================================= * * NDP705AE ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------- .SUBCKT NDP705AE 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={3.1*{-0.00272*TEMP+1.068}} KP={-0.06*TEMP+31.5} + THETA=0.056 VMAX=1.4E5 LEVEL=3) Cgs 1 3 2200p Rd 20 4 2.07m T=0.00576 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.0008*TEMP+0.98}} M=0.38 CJO=2234p VJ=0.9) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=4.3m TT=80n) Ra 4 2 3.8m TC=0.00576 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 4500p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.53 CJO=6400p VJ=0.19) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP705AE * *======================================================================= ** NDB705A ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------ .SUBCKT NDB705A 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={3.1*{-0.00272*TEMP+1.068}} KP={-0.06*TEMP+31.5} + THETA=0.056 VMAX=1.4E5 LEVEL=3) Cgs 1 3 2200p Rd 20 4 2.07m TC=0.00576 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.0008*TEMP+0.98}} M=0.38 CJO=2234p VJ=0.9) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=4.3m TT=80n) Ra 4 2 3.8m TC=0.00576 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 4500p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.53 CJO=6400p VJ=0.19) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB705A * *======================================================================= * * NDB705AE ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------ .SUBCKT NDB705AE 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={3.1*{-0.00272*TEMP+1.068}} KP={-0.06*TEMP+31.5} + THETA=0.056 VMAX=1.4E5 LEVEL=3) Cgs 1 3 2200p Rd 20 4 2.07m TC=0.00576 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.0008*TEMP+0.98}} M=0.38 CJO=2234p VJ=0.9) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=4.3m TT=80n) Ra 4 2 3.8m TC=0.00576 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 4500p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.53 CJO=6400p VJ=0.19) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB705AE * *======================================================================= * * NDP705AL ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------- .SUBCKT NDP705AL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.3*{-0.0036*TEMP+1.09}} KP={-0.18*TEMP+74.5} + THETA=0.086 VMAX=3.8E5 LEVEL=3) Cgs 1 3 2500p Rd 20 4 1m TC=0.0066 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00088*TEMP+0.978}} M=0.37 CJO=2030p VJ=1.26) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=25.6m TT=130n) Ra 4 2 4m TC=0.0066 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 4800p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=24000p VJ=0.039) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP705AL * *======================================================================= * * NDP705AEL ELECTRICAL MODEL (TO-220 N-Ch DMOS) * -------------------------- .SUBCKT NDP705AEL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.3*{-0.0036*TEMP+1.09}} KP={-0.18*TEMP+74.5} + THETA=0.086 VMAX=3.8E5 LEVEL=3) Cgs 1 3 2500p Rd 20 4 1m TC=0.0066 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00088*TEMP+0.978}} M=0.37 CJO=2030p VJ=1.26) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=25.6m TT=130n) Ra 4 2 4m TC=0.0066 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 4800p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=24000p VJ=0.039) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP705AEL * *======================================================================= * * NDB705AL ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------- .SUBCKT NDB705AL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.3*{-0.0036*TEMP+1.09}} KP={-0.18*TEMP+74.5} + THETA=0.086 VMAX=3.8E5 LEVEL=3) Cgs 1 3 2500p Rd 20 4 1m TC=0.0066 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00088*TEMP+0.978}} M=0.37 CJO=2030p VJ=1.26) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=25.6m TT=130n) Ra 4 2 4m TC=0.0066 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 4800p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=24000p VJ=0.039) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB705AL * *======================================================================= * * NDBP705AEL ELECTRICAL MODEL (TO-263 N-Ch DMOS) * --------------------------- .SUBCKT NDB705AEL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.3*{-0.0036*TEMP+1.09}} KP={-0.18*TEMP+74.5} + THETA=0.086 VMAX=3.8E5 LEVEL=3) Cgs 1 3 2500p Rd 20 4 1m TC=0.0066 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00088*TEMP+0.978}} M=0.37 CJO=2030p VJ=1.26) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=25.6m TT=130n) Ra 4 2 4m TC=0.0066 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 4800p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=24000p VJ=0.039) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB705AEL * *======================================================================= * * NDP705B ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------ .SUBCKT NDP705B 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={3.1*{-0.00272*TEMP+1.068}} KP={-0.06*TEMP+31.5} + THETA=0.056 VMAX=1.4E5 LEVEL=3) Cgs 1 3 2200p Rd 20 4 3m TC=0.00576 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.0008*TEMP+0.98}} M=0.38 CJO=2234p VJ=0.9) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=4.3m TT=80n) Ra 4 2 5m TC=0.00576 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 4500p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.53 CJO=6400p VJ=0.19) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP705B * *======================================================================= * * NDP705BE ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------- .SUBCKT NDP705BE 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={3.1*{-0.00272*TEMP+1.068}} KP={-0.06*TEMP+31.5} + THETA=0.056 VMAX=1.4E5 LEVEL=3) Cgs 1 3 2200p Rd 20 4 3m TC=0.00576 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.0008*TEMP+0.98}} M=0.38 CJO=2234p VJ=0.9) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=4.3m TT=80n) Ra 4 2 5m TC=0.00576 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 4500p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.53 CJO=6400p VJ=0.19) 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP705BE * *======================================================================= * * NDB705B ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------ .SUBCKT NDB705B 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={3.1*{-0.00272*TEMP+1.068}} KP={-0.06*TEMP+31.5} + THETA=0.056 VMAX=1.4E5 LEVEL=3) Cgs 1 3 2200p Rd 20 4 3m TC=0.00576 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.0008*TEMP+0.98}} M=0.38 CJO=2234p VJ=0.9) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=4.3m TT=80n) Ra 4 2 5m TC=0.00576 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 4500p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.53 CJO=6400p VJ=0.19) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB705B * *======================================================================= * * NDB705BE ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------- .SUBCKT NDB705BE 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={3.1*{-0.00272*TEMP+1.068}} KP={-0.06*TEMP+31.5} + THETA=0.056 VMAX=1.4E5 LEVEL=3) Cgs 1 3 2200p Rd 20 4 3m TC=0.00576 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.0008*TEMP+0.98}} M=0.38 CJO=2234p VJ=0.9) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=4.3m TT=80n) Ra 4 2 5m TC=0.00576 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 4500p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.53 CJO=6400p VJ=0.19) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB705BE * *======================================================================= * * NDP705BL ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------- .SUBCKT NDP705BL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.3*{-0.0036*TEMP+1.09}} KP={-0.18*TEMP+74.5} + THETA=0.086 VMAX=3.8E5 LEVEL=3) Cgs 1 3 2500p Rd 20 4 2m TC=0.0066 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00088*TEMP+0.978}} M=0.37 CJO=2030p VJ=1.26) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=25.6m TT=130n) Ra 4 2 6m TC=0.0066 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 4800p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=24000p VJ=0.039) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP705BL * *======================================================================= * * NDP705BEL ELECTRICAL MODEL (TO-220 N-Ch DMOS) * -------------------------- .SUBCKT NDP705BEL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.3*{-0.0036*TEMP+1.09}} KP={-0.18*TEMP+74.5} + THETA=0.086 VMAX=3.8E5 LEVEL=3) Cgs 1 3 2500p Rd 20 4 2m TC=0.0066 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00088*TEMP+0.978}} M=0.37 CJO=2030p VJ=1.26) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=25.6m TT=130n) Ra 4 2 6m TC=0.0066 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 4800p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=24000p VJ=0.039) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP705BEL * *======================================================================= * * NDB705BL ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------- .SUBCKT NDB705BL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.3*{-0.0036*TEMP+1.09}} KP={-0.18*TEMP+74.5} + THETA=0.086 VMAX=3.8E5 LEVEL=3) Cgs 1 3 2500p Rd 20 4 2m TC=0.0066 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00088*TEMP+0.978}} M=0.37 CJO=2030p VJ=1.26) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=25.6m TT=130n) Ra 4 2 6m TC=0.0066 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 4800p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=24000p VJ=0.039) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB705BL * *======================================================================= * * NDB705BEL ELECTRICAL MODEL (TO-263 N-Ch DMOS) * -------------------------- .SUBCKT NDB705BEL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.3*{-0.0036*TEMP+1.09}} KP={-0.18*TEMP+74.5} + THETA=0.086 VMAX=3.8E5 LEVEL=3) Cgs 1 3 2500p Rd 20 4 2m TC=0.0066 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00088*TEMP+0.978}} M=0.37 CJO=2030p VJ=1.26) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=25.6m TT=130n) Ra 4 2 6m TC=0.0066 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 4800p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=24000p VJ=0.039) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB705BEL * *======================================================================= * NDB7050 ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------ .SUBCKT NDB7050 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={3*{-0.00272*TEMP+1.068}} KP={-0.06*TEMP+31.5} + THETA=0.056 VMAX=1.4E5 LEVEL=3) Cgs 1 3 1500p Rd 20 4 2.5m TC=0.00576 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.0008*TEMP+0.98}} M=0.38 CJO=2234p VJ=0.9) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=4.3m TT=1u) Ra 4 2 2.5m TC=0.O0576 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 6000p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.53 CJO=6000p VJ=0.19) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB7050 * * * THERMAL MODEL OF NDP7050, NDB7050 * --------------------------------------------------------- .SUBCKT 7050THM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tjc 100 40 VALUE = {V(80,40)*1*V(90,40)}; Tjc=Pave(t)*RJC*rjc(t) R100 100 40 1k R90 90 40 1k E_rjc 90 40 table {TIME} ; Normalized NDx7050 Single Pulsed rjc(t) + (0.000010, 0.012425) + (0.000015, 0.015218) + (0.000020, 0.017572)+ (0.000030, 0.021521) + (0.000040, 0.024851) + (0.000050, 0.027784) + (0.000070, 0.032874) + (0.000100, 0.039292) + (0.000200, 0.055568) + (0.000300, 0.068056) + (0.000400, 0.078585) + (0.000500, 0.087860) + (0.000700, 0.103958) + (0.001000, 0.124253) + (0.001500, 0.152179) + (0.002000, 0.175721) + (0.003000, 0.215213) + (0.004000, 0.246135) + (0.005000, 0.271284) + (0.007000, 0.308802) + (0.010000, 0.335498) + (0.015000, 0.385281) + (0.020000, 0.417316) + (0.030000, 0.475758) + (0.040000, 0.513766) + (0.050000, 0.541558) + (0.070000, 0.603247) + (0.100000, 0.667532) + (0.200000, 0.781818) + (0.300000, 0.845887) + (0.400000, 0.888312) + (1.000000, 0.931818) + (1.500000, 0.942641) + (2.000000, 0.951299) + (3.000000, 0.970779) .ENDS 7050THM * *======================================================================= * *NDP7050 ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------ .SUBCKT NDP7050 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={3*{-0.00272*TEMP+1.068}} KP={-0.06*TEMP+31.5} + THETA=0.056 VMAX=1.4E5 LEVEL=3) Cgs 1 3 1500p Rd 20 4 2.5m TC=0.00576 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.0008*TEMP+0.98}} M=0.38 CJO=2234p VJ=0.9) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=4.3m TT=1u) Ra 4 2 2.5m TC=0.00576 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 6000p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.53 CJO=6000p VJ=0.19) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP7050 * *======================================================================= * *NDP7051 ELECTRICAL MODEL (TO-220 N-Ch DMOS) * -------------------------------------------- .SUBCKT NDP7051 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={3.3*{-0.00272*TEMP+1.068}} KP={-0.06*TEMP+31.5} + THETA=0.056 VMAX=1.4E5 LEVEL=3) Cgs 1 3 1500p Rd 20 4 2m TC=0.00576 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.0008*TEMP+0.98}} M=0.38 CJO=2234p VJ=0.9) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=4.3m TT=80n) Ra 4 2 2m TC=0.01 Rs 3 5 1m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 3400p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.53 CJO=3400p VJ=0.35) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP7051 * * * THERMAL MODEL OF NDP7051, NDB7051 * ---------------------------------------------------------------- .SUBCKT 7051THM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tjc 100 40 VALUE = {V(80,40)*1.3*V(90,40)}; Tjc=Pave(t)*RJC*rjc(t) R100 100 40 1k R90 90 40 1k E_rjc 90 40 table {TIME} ; Normalized NDP7051 Single Pulsed rjc(t) + (0.000010, 0.012425) + (0.000015, 0.015218) + (0.000020, 0.017572) + (0.000030, 0.021521) + (0.000040, 0.024851) + (0.000050, 0.027784) + (0.000070, 0.032874) + (0.000100, 0.039292) + (0.000200, 0.055568) + (0.000300, 0.068056) + (0.000400, 0.078585) + (0.000500, 0.087860) + (0.000700, 0.103958) + (0.001000, 0.124253) + (0.001500, 0.152179) + (0.002000, 0.175721) + (0.003000, 0.215213) + (0.004000, 0.246135) + (0.005000, 0.271284) + (0.007000, 0.308802) + (0.010000, 0.335498) + (0.015000, 0.385281) + (0.020000, 0.417316) + (0.030000, 0.475758) + (0.040000, 0.513766) + (0.050000, 0.541558) + (0.070000, 0.603247) + (0.100000, 0.667532) + (0.200000, 0.781818) + (0.300000, 0.845887) + (0.400000, 0.888312) + (1.000000, 0.931818) + (1.500000, 0.942641) + (2.000000, 0.951299) + (3.000000, 0.970779) .ENDS 7051THM * *======================================================================= * * NDP706A ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------ .SUBCKT NDP706A 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={3.1*{-0.00272*TEMP+1.068}} KP={-0.08*TEMP+44} + THETA=0.056 VMAX=1.4E5 LEVEL=3) Cgs 1 3 2200p Rd 20 4 2.07m TC=0.00576 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.0008*TEMP+0.98}} M=0.38 CJO=2234p VJ=0.9) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=4.3m TT=80n) Ra 4 2 3.8m TC=0.00576 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 4500p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.53 CJO=6400p VJ=0.19) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP706A * * * THERMAL MODEL OF NDP706A, NDP706AE, NDB706A, NDB706AE, * NDP706AL, NDP706AEL, NDB706AL, NDB706AEL, * NDP706B, NDP706BE, NDB706B, NDB706BE, * NDP706BL, NDP706BEL, NDB706BL, NDB706BEL * --------------------------------------------------------- .SUBCKT 706THMAL 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tjc 100 40 VALUE = {V(80,40)*1*V(90,40)}; Tjc=Pave(t)*RJC*rjc(t) R100 100 40 1k R90 90 40 1k E_rjc 90 40 table {TIME} ; Normalized NDx706x Single Pulsed rjc(t) + (0.000010, 0.012425) + (0.000015, 0.015218) + (0.000020, 0.017572) + (0.000030, 0.021521) + (0.000040, 0.024851) + (0.000050, 0.027784) + (0.000070, 0.032874) + (0.000100, 0.039292) + (0.000200, 0.055568) + (0.000300, 0.068056) + (0.000400, 0.078585) + (0.000500, 0.087860) + (0.000700, 0.103958) + (0.001000, 0.124253) + (0.001500, 0.152179) + (0.002000, 0.175721) + (0.003000, 0.215213) + (0.004000, 0.246135) + (0.005000, 0.271284) + (0.007000, 0.308802) + (0.010000, 0.335498) + (0.015000, 0.385281) + (0.020000, 0.417316) + (0.030000, 0.475758) + (0.040000, 0.513766) + (0.050000, 0.541558) + (0.070000, 0.603247) + (0.100000, 0.667532) + (0.200000, 0.781818) + (0.300000, 0.845887) + (0.400000, 0.888312) + (1.000000, 0.931818) + (1.500000, 0.942641) + (2.000000, 0.951299) + (3.000000, 0.970779) .ENDS 706THMAL * *======================================================================= * * NDP706AE ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------- .SUBCKT NDP706AE 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={3.1*{-0.00272*TEMP+1.068}} KP={-0.08*TEMP+44} + THETA=0.056 VMAX=1.4E5 LEVEL=3) Cgs 1 3 2200p Rd 20 4 2.07m TC=0.00576 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.0008*TEMP+0.98}} M=0.38 CJO=2234p VJ=0.9) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=4.3m TT=80n) Ra 4 2 3.8m TC=0.00576 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 4500p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.53 CJO=6400p VJ=0.19) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP706AE * *======================================================================= * * NDB706A ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------ .SUBCKT NDB706A 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={3.1*{-0.00272*TEMP+1.068}} KP={-0.08*TEMP+44} + THETA=0.056 VMAX=1.4E5 LEVEL=3) Cgs 1 3 2200p Rd 20 4 2.07m TC=0.00576 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.0008*TEMP+0.98}} M=0.38 CJO=2234p VJ=0.9) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=4.3m TT=80n) Ra 4 2 3.8m TC=0.00576 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 4500p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.53 CJO=6400p VJ=0.19) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB706A * *======================================================================= * * NDB706AE ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------- .SUBCKT NDB706AE 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={3.1*{-0.00272*TEMP+1.068}} KP={-0.08*TEMP+44} + THETA=0.056 VMAX=1.4E5 LEVEL=3) Cgs 1 3 2200p Rd 20 4 2.07m TC=0.00576 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.0008*TEMP+0.98}} M=0.38 CJO=2234p VJ=0.9) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=4.3m TT=80n) Ra 4 2 3.8m TC=0.00576 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 4500p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.53 CJO=6400p VJ=0.19) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB706AE * *======================================================================= * * NDP706AL ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------- .SUBCKT NDP706AL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.3*{-0.0036*TEMP+1.09}} KP={-0.18*TEMP+74.5} + THETA=0.086 VMAX=3.8E5 LEVEL=3) Cgs 1 3 2500p Rd 20 4 1m TC=0.0066 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.37 CJO=2030p VJ=1.26) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=25.6m TT=130n) Ra 4 2 4m TC=0.0066 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 4800p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=24000p VJ=0.039) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP706AL * *======================================================================= * * NDP706AEL ELECTRICAL MODEL (TO-220 N-Ch DMOS) * -------------------------- .SUBCKT NDP706AEL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.3*{-0.0036*TEMP+1.09}} KP={-0.18*TEMP+74.5} + THETA=0.086 VMAX=3.8E5 LEVEL=3) Cgs 1 3 2500p Rd 20 4 1m TC=0.0066 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.37 CJO=2030p VJ=1.26) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=25.6m TT=130n) Ra 4 2 4m TC=0.0066 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 4800p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=24000p VJ=0.039) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP706AEL * *======================================================================= * * NDB706AL ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------- .SUBCKT NDB706AL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.3*{-0.0036*TEMP+1.09}} KP={-0.18*TEMP+74.5} + THETA=0.086 VMAX=3.8E5 LEVEL=3) Cgs 1 3 2500p Rd 20 4 1m TC=0.0066 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.37 CJO=2030p VJ=1.26) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=25.6m TT=130n) Ra 4 2 4m TC=0.0066 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 4800p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=24000p VJ=0.039) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB706AL * *======================================================================= * * NDB706AEL ELECTRICAL MODEL (TO-263 N-Ch DMOS) * -------------------------- .SUBCKT NDB706AEL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.3*{-0.0036*TEMP+1.09}} KP={-0.18*TEMP+74.5} + THETA=0.086 VMAX=3.8E5 LEVEL=3) Cgs 1 3 2500p Rd 20 4 1m TC=0.0066 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.37 CJO=2030p VJ=1.26) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=25.6m TT=130n) Ra 4 2 4m TC=0.0066 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 4800p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=24000p VJ=0.039) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB706AEL * *======================================================================= * * NDP706B ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------ .SUBCKT NDP706B 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={3.1*{-0.00272*TEMP+1.068}} KP={-0.08*TEMP+44} + THETA=0.056 VMAX=1.4E5 LEVEL=3) Cgs 1 3 2200p Rd 20 4 3m TC=0.00576 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.0008*TEMP+0.98}} M=0.38 CJO=2234p VJ=0.9) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=4.3m TT=80n) Ra 4 2 5m TC=0.00576 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 4500p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.53 CJO=6400p VJ=0.19) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP706B * *======================================================================= * * NDP706BE ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------- .SUBCKT NDP706BE 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={3.1*{-0.00272*TEMP+1.068}} KP={-0.08*TEMP+44} + THETA=0.056 VMAX=1.4E5 LEVEL=3) Cgs 1 3 2200p Rd 20 4 3m TC=0.00576 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.0008*TEMP+0.98}} M=0.38 CJO=2234p VJ=0.9) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=4.3m TT=80n) Ra 4 2 5m TC=0.00576 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 4500p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.53 CJO=6400p VJ=0.19) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP706BE * *======================================================================= * * NDB706B ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------ .SUBCKT NDB706B 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={3.1*{-0.00272*TEMP+1.068}} KP={-0.08*TEMP+44} + THETA=0.056 VMAX=1.4E5 LEVEL=3) Cgs 1 3 2200p Rd 20 4 3m TC=0.00576 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.0008*TEMP+0.98}} M=0.38 CJO=2234p VJ=0.9) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=4.3m TT=80n) Ra 4 2 5m TC=0.00576 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 4500p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.53 CJO=6400p VJ=0.19) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB706B * *======================================================================= * * NDB706BE ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------- .SUBCKT NDB706BE 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={3.1*{-0.00272*TEMP+1.068}} KP={-0.08*TEMP+44} + THETA=0.056 VMAX=1.4E5 LEVEL=3) Cgs 1 3 2200p Rd 20 4 3m TC=0.00576 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.0008*TEMP+0.98}} M=0.38 CJO=2234p VJ=0.9) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=4.3m TT=80n) Ra 4 2 5m TC=0.00576 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 4500p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.53 CJO=6400p VJ=0.19) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB706BE * *======================================================================= * * NDP706BL ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------- .SUBCKT NDP706BL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.3*{-0.0036*TEMP+1.09}} KP={-0.18*TEMP+74.5} + THETA=0.086 VMAX=3.8E5 LEVEL=3) Cgs 1 3 2500p Rd 20 4 2m TC=0.0066 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.37 CJO=2030p VJ=1.26) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=25.6m TT=130n) Ra 4 2 6m TC=0.0066 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 4800p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=24000p VJ=0.039) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP706BL * *======================================================================= * * NDP706BEL ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------- .SUBCKT NDP706BEL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.3*{-0.0036*TEMP+1.09}} KP={-0.18*TEMP+74.5} + THETA=0.086 VMAX=3.8E5 LEVEL=3) Cgs 1 3 2500p Rd 20 4 2m TC=0.0066 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.37 CJO=2030p VJ=1.26) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=25.6m TT=130n) Ra 4 2 6m TC=0.0066 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 4800p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=24000p VJ=0.039) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP706BEL * *======================================================================= * * NDB706BL ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------- .SUBCKT NDB706BL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.3*{-0.0036*TEMP+1.09}} KP={-0.18*TEMP+74.5} + THETA=0.086 VMAX=3.8E5 LEVEL=3) Cgs 1 3 2500p Rd 20 4 2m TC=0.0066 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.37 CJO=2030p VJ=1.26) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=25.6m TT=130n) Ra 4 2 6m TC=0.0066 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 4800p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=24000p VJ=0.039) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB706BL * *======================================================================= * * NDB706BEL ELECTRICAL MODEL (TO-263 N-Ch DMOS) * -------------------------- .SUBCKT NDB706BEL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.3*{-0.0036*TEMP+1.09}} KP={-0.18*TEMP+74.5} + THETA=0.086 VMAX=3.8E5 LEVEL=3) Cgs 1 3 2500p Rd 20 4 2m TC=0.0066 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.37 CJO=2030p VJ=1.26) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=25.6m TT=130n) Ra 4 2 6m TC=0.0066 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 4800p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=24000p VJ=0.039) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB706BEL * * NDB7060L ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------- .SUBCKT NDB7060L 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.3*{-0.0036*TEMP+1.09}} KP={-0.18*TEMP+74.5} + THETA=0.086 VMAX=3.8E5 LEVEL=3) Cgs 1 3 2500p Rd 20 4 1m TC=0.0066 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.37 CJO=2030p VJ=1.26) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=25.6m TT=130n) Ra 4 2 4m TC=0.0066 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 4800p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=24000p VJ=0.039) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB7060L * .SUBCKT 7060LTHM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tjc 100 40 VALUE = {V(80,40)*1*V(90,40)}; Tjc=Pave(t)*RJC*rjc(t) R100 100 40 1k R90 90 40 1k E_rjc 90 40 table {TIME} ; Normalized NDx7060L Single Pulsed rjc(t) + (0.000010, 0.012425) + (0.000015, 0.015218) + (0.000020, 0.017572) + (0.000030, 0.021521) + (0.000040, 0.024851) + (0.000050, 0.027784) + (0.000070, 0.032874) + (0.000100, 0.039292) + (0.000200, 0.055568) + (0.000300, 0.068056) + (0.000400, 0.078585) + (0.000500, 0.087860) + (0.000700, 0.103958) + (0.001000, 0.124253) + (0.001500, 0.152179) + (0.002000, 0.175721) + (0.003000, 0.215213) + (0.004000, 0.246135) + (0.005000, 0.271284) + (0.007000, 0.308802) + (0.010000, 0.335498) + (0.015000, 0.385281) + (0.020000, 0.417316) + (0.030000, 0.475758) + (0.040000, 0.513766) + (0.050000, 0.541558) + (0.070000, 0.603247) + (0.100000, 0.667532) + (0.200000, 0.781818) + (0.300000, 0.845887) + (0.400000, 0.888312) + (1.000000, 0.931818) + (1.500000, 0.942641) + (2.000000, 0.951299) + (3.000000, 0.970779) .ENDS 7060LTHM * *======================================================================= * NDB7060 ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------ .SUBCKT NDB7060 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={3*{-0.00272*TEMP+1.068}} KP={-0.08*TEMP+44} + THETA=0.056 VMAX=1.4E5 LEVEL=3) Cgs 1 3 1500p Rd 20 4 2.5m TC=0.00576 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.0008*TEMP+0.98}} M=0.38 CJO=2234p VJ=0.9) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=4.3m TT=1u) Ra 4 2 2.5m TC=0.00576 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 6000p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.53 CJO=6000p VJ=0.19) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB7060 * * * THERMAL MODEL OF NDP7060, NDB7060 * --------------------------------------------------------- .SUBCKT 7060THM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 _Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tjc 100 40 VALUE = {V(80,40)*1*V(90,40)}; Tjc=Pave(t)*RJC*rjc(t) R100 100 40 1k R90 90 40 1k E_rjc 90 40 table {TIME} ; Normalized NDx7060 Single Pulsed rjc(t) + (0.000010, 0.012425) + (0.000015, 0.015218) + (0.000020, 0.017572) + (0.000030, 0.021521) + (0.000040, 0.024851) + (0.000050, 0.027784) + (0.000070, 0.032874) + (0.000100, 0.039292) + (0.000200, 0.055568) + (0.000300, 0.068056) + (0.000400, 0.078585) + (0.000500, 0.087860) + (0.000700, 0.103958) + (0.001000, 0.124253) + (0.001500, 0.152179) + (0.002000, 0.175721) + (0.003000, 0.215213) + (0.004000, 0.246135) + (0.005000, 0.271284) + (0.007000, 0.308802) + (0.010000, 0.335498) + (0.015000, 0.385281) + (0.020000, 0.417316) + (0.030000, 0.475758) + (0.040000, 0.513766) + (0.050000, 0.541558) + (0.070000, 0.603247) + (0.100000, 0.667532) + (0.200000, 0.781818) + (0.300000, 0.845887) + (0.400000, 0.888312) + (1.000000, 0.931818) + (1.500000, 0.942641) + (2.000000, 0.951299) + (3.000000, 0.970779) .ENDS 7060THM * *======================================================================= * *NDP7060 ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------ .SUBCKT NDP7060 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={3*{-0.00272*TEMP+1.068}} KP={-0.08*TEMP+44} + THETA=0.056 VMAX=1.4E5 LEVEL=3) Cgs 1 3 1500p Rd 20 4 2.5m TC=0.00576 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.0008*TEMP+0.98}} M=0.38 CJO=2234p VJ=0.9) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=4.3m TT=1u) Ra 4 2 2.5m TC=0.00576 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 6000p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.53 CJO=6000p VJ=0.19) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP7060 * * NDP7060L ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------- .SUBCKT NDP7060L 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.3*{-0.0036*TEMP+1.09}} KP={-0.18*TEMP+74.5} + THETA=0.086 VMAX=3.8E5 LEVEL=3) Cgs 1 3 2500p Rd 20 4 1m TC=0.0066 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.37 CJO=2030p VJ=1.26) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=25.6m TT=130n) Ra 4 2 4m TC=0.0066 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 4800p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=24000p VJ=0.039) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP7060L * .SUBCKT 7060LTHM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tjc 100 40 VALUE = {V(80,40)*1*V(90,40)}; Tjc=Pave(t)*RJC*rjc(t) R100 100 40 1k R90 90 40 1k E_rjc 90 40 table {TIME} ; Normalized NDx7060L Single Pulsed rjc(t) + (0.000010, 0.012425) + (0.000015, 0.015218) + (0.000020, 0.017572) + (0.000030, 0.021521) + (0.000040, 0.024851) + (0.000050, 0.027784) + (0.000070, 0.032874) + (0.000100, 0.039292) + (0.000200, 0.055568) + (0.000300, 0.068056) + (0.000400, 0.078585) + (0.000500, 0.087860) + (0.000700, 0.103958) + (0.001000, 0.124253) + (0.001500, 0.152179) + (0.002000, 0.175721) + (0.003000, 0.215213) + (0.004000, 0.246135) + (0.005000, 0.271284) + (0.007000, 0.308802) + (0.010000, 0.335498) + (0.015000, 0.385281) + (0.020000, 0.417316) + (0.030000, 0.475758) + (0.040000, 0.513766) + (0.050000, 0.541558) + (0.070000, 0.603247) + (0.100000, 0.667532) + (0.200000, 0.781818) + (0.300000, 0.845887) + (0.400000, 0.888312) + (1.000000, 0.931818) + (1.500000, 0.942641) + (2.000000, 0.951299) + (3.000000, 0.970779) .ENDS 7060LTHM * *======================================================================= * *NDP7061 ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ---------------------- .SUBCKT NDP7061 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={3.3*{-0.00272*TEMP+1.068}} KP={-0.08*TEMP+44} + THETA=0.056 VMAX=1.4E5 LEVEL=3) Cgs 1 3 1500p Rd 20 4 2m TC=0.01 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.0008*TEMP+0.98}} M=0.38 CJO=2234p VJ=0.9) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=4.3m TT=80n) Ra 4 2 2m TC=0.01 Rs 3 5 1m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 3400p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.53 CJO=3400p VJ=0.35) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP7061 * * * THERMAL MODEL OF NDP7061, NDB7061 * --------------------------------------------------------------- .SUBCKT 7061THM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tjc 100 40 VALUE = {V(80,40)*1.3*V(90,40)}; Tjc=Pave(t)*RJC*rjc(t) R100 100 40 1k R90 90 40 1k E_rjc 90 40 table {TIME} ; Normalized NDP7061 Single Pulsed rjc(t) + (0.000010, 0.012425) + (0.000015, 0.015218) + (0.000020, 0.017572) + (0.000030, 0.021521) + (0.000040, 0.024851) + (0.000050, 0.027784) + (0.000070, 0.032874) + (0.000100, 0.039292) + (0.000200, 0.055568) + (0.000300, 0.068056) + (0.000400, 0.078585) + (0.000500, 0.087860) + (0.000700, 0.103958) + (0.001000, 0.124253) + (0.001500, 0.152179) + (0.002000, 0.175721) + (0.003000, 0.215213) + (0.004000, 0.246135) + (0.005000, 0.271284) + (0.007000, 0.308802) + (0.010000, 0.335498) + (0.015000, 0.385281) + (0.020000, 0.417316) + (0.030000, 0.475758) + (0.040000, 0.513766) + (0.050000, 0.541558) + (0.070000, 0.603247) + (0.100000, 0.667532) + (0.200000, 0.781818) + (0.300000, 0.845887) + (0.400000, 0.888312) + (1.000000, 0.931818) + (1.500000, 0.942641) + (2.000000, 0.951299) + (3.000000, 0.970779) .ENDS 7061THM * *======================================================================= * * NDP708A ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------ .SUBCKT NDP708A 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={3.3*{-0.00264*TEMP+1.066}} KP={-0.07*TEMP+37.75} + THETA=0.056 VMAX=2.4E5 LEVEL=3) Cgs 1 3 2538p Rd 20 4 3m TC=0.0072 Dds 3 4 DDS .MODEL DDS D(BV={80*{0.00072*TEMP+0.982}} M=0.41 CJO=1810p VJ=1.24) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=31m TT=112n) Ra 4 2 5.2m TC=0.0072 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 4500p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.57 CJO=6100p VJ=0.117) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP708A * * * THERMAL MODEL OF NDP708A, NDP708AE, NDB708A, NDB708AE, * NDP708B, NDP708BE, NDB708B, NDB708BE * ----------------------------------------------------- .SUBCKT 708THMAL 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tjc 100 40 VALUE = {V(80,40)*1*V(90,40)}; Tjc=Pave(t)*RJC*rjc(t) R100 100 40 1k R90 90 40 1k E_rjc 90 40 table {TIME} ; Normalized NDx708x Single Pulsed rjc(t) + (0.000010, 0.012425) + (0.000015, 0.015218) + (0.000020, 0.017572) + (0.000030, 0.021521) + (0.000040, 0.024851) + (0.000050, 0.027784) + (0.000070, 0.032874) + (0.000100, 0.039292) + (0.000200, 0.055568) + (0.000300, 0.068056) + (0.000400, 0.078585) + (0.000500, 0.087860) + (0.000700, 0.103958) + (0.001000, 0.124253) + (0.001500, 0.152179) + (0.002000, 0.175721) + (0.003000, 0.215213) + (0.004000, 0.246135) + (0.005000, 0.271284) + (0.007000, 0.308802) + (0.010000, 0.335498) + (0.015000, 0.385281) + (0.020000, 0.417316) + (0.030000, 0.475758) + (0.040000, 0.513766) + (0.050000, 0.541558) + (0.070000, 0.603247) + (0.100000, 0.667532) + (0.200000, 0.781818) + (0.300000, 0.845887) + (0.400000, 0.888312) + (1.000000, 0.931818) + (1.500000, 0.942641) + (2.000000, 0.951299) + (3.000000, 0.970779) .ENDS 708THMAL * *======================================================================= * * NDP708AE ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------- .SUBCKT NDP708AE 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={3.3*{-0.00264*TEMP+1.066}} KP={-0.07*TEMP+37.75} + THETA=0.056 VMAX=2.4E5 LEVEL=3) Cgs 1 3 2538p Rd 20 4 3m TC=0.0068 Dds 3 4 DDS .MODEL DDS D(BV={80*{0.00072*TEMP+0.982}} M=0.41 CJO=1810p VJ=1.24) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=31m TT=112n) Ra 4 2 5.2m TC=0.0068 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 4500p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.57 CJO=6100p VJ=0.117) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP708AE * *======================================================================= * * NDB708A ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------ .SUBCKT NDB708A 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={3.3*{-0.00264*TEMP+1.066}} KP={-0.07*TEMP+37.75} + THETA=0.056 VMAX=2.4E5 LEVEL=3) Cgs 1 3 2538p Rd 20 4 3m TC=0.01 Dds 3 4 DDS .MODEL DDS D(BV={80*{0.00072*TEMP+0.982}} M=0.41 CJO=1810p VJ=1.24) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=31m TT=112n) Ra 4 2 5.2m TC=0.01 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 4500p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.57 CJO=6100p VJ=0.117) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB708A * *======================================================================= * * NDB708AE ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------- .SUBCKT NDB708AE 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={3.3*{-0.00264*TEMP+1.066}} KP={-0.07*TEMP+37.75} + THETA=0.056 VMAX=2.4E5 LEVEL=3) Cgs 1 3 2538p Rd 20 4 3m TC=0.01 Dds 3 4 DDS .MODEL DDS D(BV={80*{0.00072*TEMP+0.982}} M=0.41 CJO=1810p VJ=1.24) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=31m TT=112n) Ra 4 2 5.2m TC=0.01 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 4500p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.57 CJO=6100p VJ=0.117) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB708AE * *======================================================================= * * NDP708B ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------ .SUBCKT NDP708B 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={3.3*{-0.00264*TEMP+1.066}} KP={-0.07*TEMP+37.75} + THETA=0.056 VMAX=2.4E5 LEVEL=3) Cgs 1 3 2538p Rd 20 4 4m TC=0.0068 Dds 3 4 DDS .MODEL DDS D(BV={80*{0.00072*TEMP+0.982}} M=0.41 CJO=1810p VJ=1.24) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=31m TT=112n) Ra 4 2 7m TC=0.068 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 4500p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.57 CJO=6100p VJ=0.117) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP708B * *======================================================================= * * NDP708BE ELECTRICAL MODEL (TO-220 N-Ch DMOS) * ------------------------- .SUBCKT NDP708BE 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={3.3*{-0.00264*TEMP+1.066}} KP={-0.07*TEMP+37.75} + THETA=0.056 VMAX=2.4E5 LEVEL=3) Cgs 1 3 2538p Rd 20 4 4m TC=0.0068 Dds 3 4 DDS .MODEL DDS D(BV={80*{0.00072*TEMP+0.982}} M=0.41 CJO=1810p VJ=1.24) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=31m TT=112n) Ra 4 2 7m TC=0.0068 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 4500p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.57 CJO=6100p VJ=0.117) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDP708BE * *======================================================================= * * NDB708B ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------ .SUBCKT NDB708B 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={3.3*{-0.00264*TEMP+1.066}} KP={-0.07*TEMP+37.75} + THETA=0.056 VMAX=2.4E5 LEVEL=3) Cgs 1 3 2538p Rd 20 4 4m TC=0.0068 Dds 3 4 DDS .MODEL DDS D(BV={80*{0.00072*TEMP+0.982}} M=0.41 CJO=1810p VJ=1.24) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=31m TT=112n) Ra 4 2 7m TC=0.0068 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 4500p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.57 CJO=6100p VJ=0.117) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB708B * *======================================================================= * * NDB708BE ELECTRICAL MODEL (TO-263 N-Ch DMOS) * ------------------------- .SUBCKT NDB708BE 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={3.3*{-0.00264*TEMP+1.066}} KP={-0.07*TEMP+37.75} + THETA=0.056 VMAX=2.4E5 LEVEL=3) Cgs 1 3 2538p Rd 20 4 4m TC=0.0068 Dds 3 4 DDS .MODEL DDS D(BV={80*{0.00072*TEMP+0.982}} M=0.41 CJO=1810p VJ=1.24) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=31m TT=112n) Ra 4 2 7m TC=0.0068 Rs 3 5 1.37m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 4500p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.57 CJO=6100p VJ=0.117) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDB708BE * * NDS331N ELECTRICAL MODEL (SuperSOT-3 SOT-23 N-Ch DMOS) * ------------------------ .SUBCKT NDS331N 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={0.7*{-0.0032*TEMP+1.08}} KP={-0.011*TEMP+5.275} + THETA=0.096 VMAX=4E5 LEVEL=3) Cgs 1 3 150p Rd 20 4 10m TC=0.0048 Dds 3 4 DDS .MODEL DDS D(BV={20*{0.0008*TEMP+0.98}} M=0.3 CJO=200p VJ=0.8) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=40m TT=100n) Ra 4 2 25m TC=0.0048 Rs 3 5 1m Ls 5 30 0.5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 510p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.5 CJO=360p VJ=0.15) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDS331N * * NDS331N THERMAL MODEL * --------------------- .SUBCKT 331NTHM 50 40 100 Rop 50 60 1meg Cop 60 70 1u IC=0 E_W 40 70 40 60 1meg E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*250*V(90,40)} 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDS331N Single Pulsed rja(t) +( 0.0001 ,0.001402 ) +(0.000872 , 0.0085 ) +(0.009476 ,0.057119 ) +( 0.05 ,0.146823 ) +( 0.1 ,0.205168 ) +( 0.2 ,0.279125 ) +( 0.5 ,0.401537 ) +( 1 ,0.495428 ) +( 2 ,0.576191 ) +( 5 ,0.669571 ) +( 10.683 ,0.741601 ) +( 21.2997 ,0.810463 ) +( 50 ,0.895578 ) +( 100 ,0.953184 ) +( 156.877 ,0.975353 ) +( 216.442 ,0.979892 ) .ENDS 331NTHM *=======================================================================* * NDS332P ELECTRICAL MODEL (SuperSOT-3 SOT-23 P-Ch DMOS) * ------------------------ .SUBCKT NDS332P 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS PMOS (VTO={-0.65*{-0.00148*TEMP+1.037}} KP={-0.006*TEMP+3.25} + THETA=0.096 VMAX=4E5 LEVEL=3) Cgs 1 3 170p Rd 20 4 30m TC=0.00416 Dds 4 3 DDS .MODEL DDS D(BV={20*{0.00068*TEMP+0.983}} M=0.3 CJO=200p VJ=0.8) Dbody 20 3 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=40m TT=100n) Ra 4 2 160m TC=0.00416 Rs 3 5 1m Ls 5 30 0.5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER PMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 610p Rcgd 7 4 10meg Dgd 4 6 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.5 CJO=290p VJ=0.12) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDS332P * * NDS332P THERMAL MODEL * --------------------- .SUBCKT 332PTHM 50 40 100 Rop 50 60 1meg Cop 60 70 1u IC=0 E_W 40 70 40 60 1meg E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*250*V(90,40)} R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDS332P Single Pulsed rja(t) +( 0.0001 ,0.001402 ) +(0.000872 , 0.0085 ) +(0.009476 ,0.057119 ) +( 0.05 ,0.146823 ) +( 0.1 ,0.205168 ) +( 0.2 ,0.279125 ) +( 0.5 ,0.401537 ) +( 1 ,0.495428 ) +( 2 ,0.576191 ) +( 5 ,0.669571 ) +( 10.683 ,0.741601 ) +( 21.2997 ,0.810463 ) +( 50 ,0.895578 ) +( 100 ,0.953184 ) +( 156.877 ,0.975353 ) +( 216.442 ,0.979892 ) .ENDS 332PTHM *======================================================================= * NDS335N ELECTRICAL MODEL (SuperSOT-3 SOT-23 N-Ch DMOS) * ------------------------ .SUBCKT NDS335N 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={0.65*{-0.0032*TEMP+1.08}} KP={-0.018*TEMP+8.65} + THETA=0.096 VMAX=4E5 LEVEL=3) Cgs 1 3 250p Rd 20 4 10m TC=0.0048 Dds 3 4 DDS .MODEL DDS D(BV={20*{0.00084*TEMP+0.979}} M=0.3 CJO=250p VJ=0.8) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=40m TT=100n) Ra 4 2 25m TC=0.0048 Rs 3 5 1m Ls 5 30 0.5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 980p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.5 CJO=450p VJ=0.15) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDS335N * * NDS335N THERMAL MODEL * --------------------- .SUBCKT 335NTHM 50 40 100 Rop 50 60 1meg Cop 60 70 1u IC=0 E_W 40 70 40 60 1meg E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*250*V(90,40)} R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDS335N Single Pulsed rja(t) +( 0.0001 ,0.001402 ) +(0.000872 , 0.0085 ) +(0.009476 ,0.057119 ) +( 0.05 ,0.146823 ) +( 0.1 ,0.205168 ) +( 0.2 ,0.279125 ) +( 0.5 ,0.401537 ) +( 1 ,0.495428 ) +( 2 ,0.576191 ) +( 5 ,0.669571 ) +( 10.683 ,0.741601 ) +( 21.2997 ,0.810463 ) +( 50 ,0.895578 ) +( 100 ,0.953184 ) +( 156.877 ,0.975353 ) +( 216.442 ,0.979892 ) .ENDS 335NTHM * * NDS336P ELECTRICAL MODEL (SuperSOT-3 SOT-23 P-Ch DMOS) * ------------------------ .SUBCKT NDS336P 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS PMOS (VTO={-0.9*{-0.00272*TEMP+1.068}} KP={-0.012*TEMP+5} + THETA=0.096 VMAX=4E5 LEVEL=3) Cgs 1 3 450p Rd 20 4 20m TC=0.0044 Dds 4 3 DDS .MODEL DDS D(BV={20*{0.000384*TEMP+0.9904}} M=0.3 CJO=450p VJ=0.8) Dbody 20 3 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=40m TT=100n) Ra 4 2 100m TC=0.0044 Rs 3 5 1m Ls 5 30 0.5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER PMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 710p Rcgd 7 4 10meg Dgd 4 6 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.5 CJO=510p VJ=0.12) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDS336P * * NDS336P THERMAL MODEL * --------------------- .SUBCKT 336PTHM 50 40 100 Rop 50 60 1meg Cop 60 70 1u IC=0 E_W 40 70 40 60 1meg E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*250*V(90,40)} R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDS336P Single Pulsed rja(t) +( 0.0001 ,0.001402 ) +(0.000872 , 0.0085 ) +(0.009476 ,0.057119 ) +( 0.05 ,0.146823 ) +( 0.1 ,0.205168 ) +( 0.2 ,0.279125 ) +( 0.5 ,0.401537 ) +( 1 ,0.495428 ) +( 2 ,0.576191 ) +( 5 ,0.669571 ) +( 10.683 ,0.741601 ) +( 21.2997 ,0.810463 ) +( 50 ,0.895578 ) +( 100 ,0.953184 ) +( 156.877 ,0.975353 ) +( 216.442 ,0.979892 ) .ENDS 336PTHM *======================================================================= * NDS0605 ELECTRICAL MODEL (SOT-23 Single P-Ch DMOS) * ------------------------ .SUBCKT NDS0605 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS PMOS (VTO={-1.9{-0.0012*TEMP+1.03}} KP={-0.0006*TEMP+0.315} + THETA=0.086 VMAX=3.8E5 LEVEL=3) Cgs 1 3 40p Rd 20 4 1.4 TC=0.0064 Dds 4 3 DDS .MODEL DDS D(BV={60*{0.00096*TEMP+0.976}} M=0.35 CJO=100p VJ=1.0) Dbody 20 3 DBODY .MODEL DBODY D(IS=1E-12 N=1 RS=12.7m TT=25n) Ra 4 2 1.2 TC=0.0064 Rs 3 5 10m Ls 5 30 0.5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER PMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 85p Rcgd 7 4 10meg Dgd 4 6 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.55 CJO=85p VJ=0.120) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDS0605 * * NDS0605 THERMAL MODEL * --------------------- .SUBCKT 0605THM 50 40 100 Rop 50 60 1meg Cop 60 70 1u IC=0 E_W 40 70 40 60 1meg E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*250*V(90,40)} R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDS0605 Single Pulsed rja(t) +( 0.0001 ,0.001402 ) +(0.000872 , 0.0085 ) +(0.009476 ,0.057119 ) +( 0.05 ,0.146823 ) +( 0.1 ,0.205168 ) +( 0.2 ,0.279125 ) +( 0.5 ,0.401537 ) +( 1 ,0.495428 ) +( 2 ,0.576191 ) +( 5 ,0.669571 ) +( 10.683 ,0.741601 ) +( 21.2997 ,0.810463 ) +( 50 ,0.895578 ) +( 100 ,0.953184 ) +( 156.877 ,0.975353 ) +( 216.442 ,0.979892 ) .ENDS 0605THM *====================================================================== * * NDS0610 ELECTRICAL MODEL (SOT-23 Single P-Ch DMOS) * ------------------------ .SUBCKT NDS0610 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS PMOS (VTO={-1.9*{-0.0012*TEMP+1.03}} KP={-0.0006*TEMP+0.315} + THETA=0.086 VMAX=3.8E5 LEVEL=3) Cgs 1 3 40p Rd 20 4 1.4 TC=0.0064 Dds 4 3 DDS .MODEL DDS D(BV={60*{0.00096*TEMP+0.976}} M=0.35 CJO=100p VJ=1.0) Dbody 20 3 DBODY .MODEL DBODY D(IS=1E-12 N=1 RS=12.7m TT=25n) Ra 4 2 1.2 TC=0.0064 Rs 3 5 10m Ls 5 30 0.5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER PMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 85p Rcgd 7 4 10meg Dgd 4 6 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.55 CJO=85p VJ=0.120) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDS0610 * * NDS0610 THERMAL MODEL * --------------------- .SUBCKT 0610THM 50 40 100 Rop 50 60 1meg Cop 60 70 1u IC=0 E_W 40 70 40 60 1meg E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*250*V(90,40)} R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDS0610 Single Pulsed rja(t) +( 0.0001 ,0.001402 ) +(0.000872 , 0.0085 ) +(0.009476 ,0.057119 ) +( 0.05 ,0.146823 ) +( 0.1 ,0.205168 ) +( 0.2 ,0.279125 ) +( 0.5 ,0.401537 ) +( 1 ,0.495428 ) +( 2 ,0.576191 ) +( 5 ,0.669571 ) +( 10.683 ,0.741601 ) +( 21.2997 ,0.810463 ) +( 50 ,0.895578 ) +( 100 ,0.953184 ) +( 156.877 ,0.975353 ) +( 216.442 ,0.979892 ) .ENDS 0610THM *======================================================================= * *NDS7002A ELECTRICAL MODEL (SOT-23 Single N-Ch DMOS) * ----------------------- .SUBCKT NDS7002A 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={2.1*{-0.0016*TEMP+1.04}} KP=0.35 THETA=0.086 + VMAX=2.2E5 LEVEL=3) Cgs 1 3 60p Rd 20 4 0.3 TC=0.0075 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00072*TEMP+0.982}} M=0.36 CJO=23p VJ=0.8) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=40m TT=100n) Ra 4 2 0.4 TC=0.0075 Rs 3 5 10m Ls 5 30 .5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 85p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.53 CJO=85p VJ=0.12) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDS7002A * * NDS7002A THERMAL MODEL * --------------------- .SUBCKT 7002ATHM 50 40 100 Rop 50 60 1meg Cop 60 70 1u IC=0 E_W 40 70 40 60 1meg E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*250*V(90,40)} R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDS7002A Single Pulsed rja(t) +( 0.0001 ,0.001402 ) +(0.000872 , 0.0085 ) +(0.009476 ,0.057119 ) +( 0.05 ,0.146823 ) +( 0.1 ,0.205168 ) +( 0.2 ,0.279125 ) +( 0.5 ,0.401537 ) +( 1 ,0.495428 ) +( 2 ,0.576191 ) +( 5 ,0.669571 ) +( 10.683 ,0.741601 ) +( 21.2997 ,0.810463 ) +( 50 ,0.895578 ) +( 100 ,0.953184 ) +( 156.877 ,0.975353 ) +( 216.442 ,0.979892 ) .ENDS 7002ATHM * NDS351N ELECTRICAL MODEL (SuperSOT-3 SOT-23 N-Ch DMOS) * ------------------------ .SUBCKT NDS351N 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={2.2*{-0.00192*TEMP+1.048}} KP={-0.007*TEMP+4.075} + THETA=0.096 VMAX=4E5 LEVEL=3) Cgs 1 3 150p Rd 20 4 10m TC=0.004 Dds 3 4 DDS .MODEL DDS D(BV={30*{0.00104*TEMP+0.974}} M=0.3 CJO=200p VJ=0.8) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=40m TT=100n) Ra 4 2 40m TC=0.004 Rs 3 5 1m 5 30 0.5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 210p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.5 CJO=210p VJ=0.15) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDS351N * * NDS351N THERMAL MODEL * --------------------- .SUBCKT 351NTHM 50 40 100 Rop 50 60 1meg Cop 60 70 1u IC=0 E_W 40 70 40 60 1meg E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*250*V(90,40)} R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDS351N Single Pulsed rja(t) +( 0.0001 ,0.001402 ) +(0.000872 , 0.0085 ) +(0.009476 ,0.057119 ) +( 0.05 ,0.146823 ) +( 0.1 ,0.205168 ) +( 0.2 ,0.279125 ) +( 0.5 ,0.401537 ) +( 1 ,0.495428 ) +( 2 ,0.576191 ) +( 5 ,0.669571 ) +( 10.683 ,0.741601 ) +( 21.2997 ,0.810463 ) +( 50 ,0.895578 ) +( 100 ,0.953184 ) +( 156.877 ,0.975353 ) +( 216.442 ,0.979892 ) .ENDS 351NTHM *=======================================================================* * NDS352P ELECTRICAL MODEL (SuperSOT-3 SOT-23 P-Ch DMOS) * ------------------------ .SUBCKT NDS352P 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS PMOS (VTO={-2.3*{-0.00184*TEMP+1.046}} KP={-0.003*TEMP+2.075} + THETA=0.096 VMAX=4E5 LEVEL=3) Cgs 1 3 170p Rd 20 4 30m TC=0.00248 Dds 4 3 DDS .MODEL DDS D(BV={30*{0.0006*TEMP+0.985}} M=0.3 CJO=200p VJ=0.8) Dbody 20 3 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=40m TT=100n) Ra 4 2 160m TC=0.00248 Rs 3 5 1m Ls 5 30 0.5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER PMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 230p Rcgd 7 4 10meg Dgd 4 6 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.5 CJO=230p VJ=0.12) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDS352P * * NDS352P THERMAL MODEL * --------------------- .SUBCKT 352PTHM 50 40 100 Rop 50 60 1meg Cop 60 70 1u IC=0 E_W 40 70 40 60 1meg E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*250*V(90,40)} R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDS352P Single Pulsed rja(t) +( 0.0001 ,0.001402 ) +(0.000872 , 0.0085 ) +(0.009476 ,0.057119 ) +( 0.05 ,0.146823 ) +( 0.1 ,0.205168 ) +( 0.2 ,0.279125 ) +( 0.5 ,0.401537 ) +( 1 ,0.495428 ) +( 2 ,0.576191 ) +( 5 ,0.669571 ) +( 10.683 ,0.741601 ) +( 21.2997 ,0.810463 ) +( 50 ,0.895578 ) +( 100 ,0.953184 ) +( 156.877 ,0.975353 ) +( 216.442 ,0.979892 ) .ENDS 352PTHM *======================================================================= * NDS355N ELECTRICAL MODEL (SuperSOT-3 SOT-23 N-Ch DMOS) *PRELIMINARY * ------------------------ .SUBCKT NDS355N 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={2.2*{-0.00224*TEMP+1.056}} KP={-0.009*TEMP+5.25} + THETA=0.056 VMAX=4E5 LEVEL=3) Cgs 1 3 220p Rd 20 4 20m TC=0.00464 Dds 3 4 DDS .MODEL DDS D(BV={30*{0.0008*TEMP+0.98}} M=0.3 CJO=200p VJ=0.8) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=40m TT=100n) Ra 4 2 36m TC=0.00464 Rs 3 5 1m Ls 5 30 0.5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 380p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.5 CJO=280p VJ=0.15) M3 7 9 1 1 INTER 9 1 4 1 -2 .ENDS NDS355N * * * NDS355N THERMAL MODEL * --------------------- .SUBCKT 355NTHM 50 40 100 Rop 50 60 1meg Cop 60 70 1u IC=0 E_W 40 70 40 60 1meg E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*250*V(90,40)} R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDS355N Single Pulsed rja(t) +( 0.0001 ,0.001402 ) +(0.000872 , 0.0085 ) +(0.009476 ,0.057119 ) +( 0.05 ,0.146823 ) +( 0.1 ,0.205168 ) +( 0.2 ,0.279125 ) +( 0.5 ,0.401537 ) +( 1 ,0.495428 ) +( 2 ,0.576191 ) +( 5 ,0.669571 ) +( 10.683 ,0.741601 ) +( 21.2997 ,0.810463 ) +( 50 ,0.895578 ) +( 100 ,0.953184 ) +( 156.877 ,0.975353 ) +( 216.442 ,0.979892 ) .ENDS 355NTHM ================================================================= * NDS356P ELECTRICAL MODEL (SuperSOT-3 SOT-23 N-Ch DMOS) * ------------------------ .SUBCKT NDS356P 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS PMOS (VTO={-2.1*{-0.00216*TEMP+1.054}} KP={-0.005*TEMP+3.825} + THETA=0.096 VMAX=4E5 LEVEL=3) Cgs 1 3 280p Rd 20 4 10m TC=0.00184 Dds 4 3 DDS .MODEL DDS D(BV={30*{0.006*TEMP+0.85}} M=0.3 CJO=200p VJ=0.8) Dbody 20 3 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=40m TT=100n) Ra 4 2 65m TC=0.00184 Rs 3 5 1m Ls 5 30 0.5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER PMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 360p Rcgd 7 4 10meg Dgd 4 6 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.5 CJO=360p VJ=0.12) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDS356P * * NDS356P THERMAL MODEL * --------------------- .SUBCKT 356PTHM 50 40 100 Rop 50 60 1meg Cop 60 70 1u IC=0 E_W 40 70 40 60 1meg E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*250*V(90,40)} R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDS356P Single Pulsed rja(t) +( 0.0001 ,0.001402 ) +(0.000872 , 0.0085 ) +(0.009476 ,0.057119 ) +( 0.05 ,0.146823 ) +( 0.1 ,0.205168 ) +( 0.2 ,0.279125 ) +( 0.5 ,0.401537 ) +( 1 ,0.495428 ) +( 2 ,0.576191 ) +( 5 ,0.669571 ) +( 10.683 ,0.741601 ) +( 21.2997 ,0.810463 ) +( 50 ,0.895578 ) +( 100 ,0.953184 ) +( 156.877 ,0.975353 ) +( 216.442 ,0.979892 ) .ENDS 356PTHM * NDS8410 ELECTRICAL MODEL (SO-8 Dual N-Ch DMOS) * ------------------------ .SUBCKT NDS8410 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.65*{-0.00384*TEMP+1.096}} KP={-0.05*TEMP+27.25} + THETA=0.086 VMAX=5E5 LEVEL=3) Cgs 1 3 1100p Rd 20 4 2m TC=0.00376 Dds 3 4 DDS .MODEL DDS D(BV={30*{0.00088*TEMP+0.978}} M=0.35 CJO=800p VJ=0.9) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=40m TT=70n) Ra 4 2 3m TC=0.00376 Rs 3 5 1m Ls 5 30 0.9n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 2880p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.325 CJO=2800p VJ=0.039) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDS8410 * * * NDS8410 Single Pulse THERMAL MODEL * ---------------------------------- .SUBCKT 8410THM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*125*V(90,40)}; Tja=Pave(t)*RJA*rja(t) R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDS8410 Single Pulsed Rja + (0.0001, 0.002232) + (0.0002, 0.003156) + (0.0005, 0.00499) + (0.001, 0.007057) + (0.002, 0.00998) + (0.005, 0.01578) + (0.01, 0.022316) + (0.02, 0.03156) + (0.05, 0.049901) + (0.1, 0.070571) + (0.2, 0.099802) + (0.5, 0.157801) + (1, 0.223165) + (2, 0.304706) + (5, 0.430226) + (10, 0.532168) + (20, 0.641667) + (50, 0.789139) + (100, 0.876999) + (200, 0.940897) + (500, 1) + (999, 1) .ENDS 8410THM * * NDS8426 ELECTRICAL MODEL (SO-8 Dual N-Ch DMOS) * ------------------------ .SUBCKT NDS8426 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={0.6*{-0.00424*TEMP+1.106}} KP={-0.09*TEMP+61.25} + THETA=0.086 VMAX=5E5 LEVEL=3) Cgs 1 3 400p Rd 20 4 2m TC=0.004 Dds 3 4 DDS .MODEL DDS D(BV={20*{0.00072*TEMP+0.982}} M=0.35 CJO=290p VJ=0.9) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=40m TT=70n) Ra 4 2 4m TC=0.004 Rs 3 5 1m Ls 5 30 0.9n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1450p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.325 CJO=750p VJ=0.039) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDS8426 * * * NDS8426 Single Pulse THERMAL MODEL * ---------------------------------- .SUBCKT 8426THM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*125*V(90,40)}; Tja=Pave(t)*RJA*rja(t) R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDS8426 Single Pulsed Rja + (0.0001, 0.002232) + (0.0002, 0.003156) + (0.0005, 0.00499) + (0.001, 0.007057) + (0.002, 0.00998) + (0.005, 0.01578) + (0.01, 0.022316) + (0.02, 0.03156) + (0.05, 0.049901) + (0.1, 0.070571) + (0.2, 0.099802) + (0.5, 0.157801) + (1, 0.223165) + (2, 0.304706) + (5, 0.430226) + (10, 0.532168) + (20, 0.641667) + (50, 0.789139) + (100, 0.876999) + (200, 0.940897) + (500, 1) + (999, 1) .ENDS 8426THM * * NDS8433 ELECTRICAL MODEL (SO-8 Single P-Ch DMOS) * ------------------------ .SUBCKT NDS8433 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS PMOS (VTO={-1.1*{-0.00328*TEMP+1.082}} KP={-0.035*TEMP+30.875} + THETA=0.086 VMAX=2.0E5 LEVEL=3) Cgs 1 3 2000p Rd 20 4 8m TC=0.00384 Dds 4 3 DDS .MODEL DDS D(BV={20*{0.00048*TEMP+0.988}} M=0.35 CJO=2000p VJ=0.8) Dbody 20 3 DBODY .MODEL DBODY D(IS=1E-12 N=1 RS=12.7m TT=25n) Ra 4 2 10m TC=0.00384 Rs 3 5 8m Ls 5 30 0.9n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER PMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 3300p Rcgd 7 4 10meg Dgd 4 6 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.55 CJO=2300p VJ=0.120) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDS8433 * * * NDS8433 THERMAL MODEL * --------------------- .SUBCKT 8433THM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*105*V(90,40)}; Tja=Pave(t)*RJA*rja(t) R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDS8433 Single Pulsed rja(t) + (0.0001, 0.002232) + (0.0002, 0.003156) + (0.0005, 0.00499) + (0.001, 0.007057) + (0.002, 0.00998) + (0.005, 0.01578) + (0.01, 0.022316) + (0.02, 0.03156) + (0.05, 0.049901) + (0.1, 0.070571) + (0.2, 0.099802) + (0.5, 0.157801) + (1, 0.223165) + (2, 0.304706) + (5, 0.430226) + (10, 0.532168) + (20, 0.641667) + (50, 0.789139) + (100, 0.876999) + (200, 0.940897) + (500, 1) + (999, 1) .ENDS 8433THM * * NDS8434 ELECTRICAL MODEL (SO-8 Single P-Ch DMOS) * ------------------------ .SUBCKT NDS8434 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS PMOS (VTO={-0.9*{-0.00336*TEMP+1.084}} KP={-0.04*TEMP+48} + THETA=0.086 VMAX=2.0E5 LEVEL=3) Cgs 1 3 3100p Rd 20 4 12m TC=0.00416 Dds 4 3 DDS .MODEL DDS D(BV={20*{0.000624*TEMP+0.9844}} M=0.35 CJO=2600p VJ=0.8) Dbody 20 3 DBODY .MODEL DBODY D(IS=1E-12 N=1 RS=12.7m TT=25n) Ra 4 2 12m TC=0.00416 Rs 3 5 8m Ls 5 30 0.9n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER PMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 5100p Rcgd 7 4 10meg Dgd 4 6 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.55 CJO=3800p VJ=0.120) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDS8434 * * * NDS8434 THERMAL MODEL * --------------------- .SUBCKT 8434THM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*105*V(90,40)}; Tja=Pave(t)*RJA*rja(t) R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDS8434 Single Pulsed rja(t) + (0.0001, 0.002232) + (0.0002, 0.003156) + (0.0005, 0.00499) + (0.001, 0.007057) + (0.002, 0.00998) + (0.005, 0.01578) + (0.01, 0.022316) + (0.02, 0.03156) + (0.05, 0.049901) + (0.1, 0.070571) + (0.2, 0.099802) + (0.5, 0.157801) + (1, 0.223165) + (2, 0.304706) + (5, 0.430226) + (10, 0.532168) + (20, 0.641667) + (50, 0.789139) + (100, 0.876999) + (200, 0.940897) + (500, 1) + (999, 1) .ENDS 8434THM * *===================================================================== *(SO-8 Complemenatry Half Bridge DMOS) * NDS8852H ELECTRICAL MODEL (P-CHANNEL) * ------------------------ .SUBCKT NDS8852HP 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS PMOS (VTO={-1.6*{-0.00216*TEMP+1.054}} KP={-0.006*TEMP+4.65} + THETA=0.086 VMAX=5E5 TOX=4.25E-8 LEVEL=3) Cgs 1 3 350p Rd 20 4 20m TC=0.0036 Dds 4 3 DDS .MODEL DDS D(BV={30*{0.00064*TEMP+0.984}} M=0.3 CJO=300p VJ=0.9) Dbody 20 3 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=40m TT=29n) Ra 4 2 25m TC=0.0036 Rs 3 5 1m Ls 5 30 0.9n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER PMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 590p Rcgd 7 4 20meg Dgd 4 6 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.5 CJO=590p VJ=0.12) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDS8852HP * * .SUBCKT NDS8852HN 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.8*{-0.00248*TEMP+1.062}} KP={-0.014*TEMP+7.55} + THETA=0.086 VMAX=5E5 LEVEL=3) Cgs 1 3 400p Rd 20 4 5m TC=0.0036 Dds 3 4 DDS .MODEL DDS D(BV={30*{0.0008*TEMP+0.98}} M=0.35 CJO=290p VJ=0.51) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=40m TT=70n) Ra 4 2 10m TC=0.0036 Rs 3 5 1m Ls 5 30 0.9n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 450p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.325 CJO=450p VJ=0.039) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDS8852HN * * * NDS8852H THERMAL MODEL * --------------------- .SUBCKT 8852HTHM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*105*V(90,40)}; Tja=Pave(t)*RJA*rja(t) R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDS8852H Single Pulsed rja(t) + (0.0001, 0.002232) + (0.0002, 0.003156) + (0.0005, 0.00499) + (0.001, 0.007057) + (0.002, 0.00998) + (0.005, 0.01578) + (0.01, 0.022316) + (0.02, 0.03156) + (0.05, 0.049901) + (0.1, 0.070571) + (0.2, 0.099802) + (0.5, 0.157801) + (1, 0.223165) + (2, 0.304706) + (5, 0.430226) + (10, 0.532168) + (20, 0.641667) + (50, 0.789139) + (100, 0.876999) + (200, 0.940897) + (500, 1) + (999, 1) .ENDS 8852HTHM * *======================================================================= *(SO-8 Complementary Half Bridge DMOS) * NDS8858H P-Ch ELECTRICAL MODEL * --------------------------- .SUBCKT NDS8858HP 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS PMOS (VTO={-1.6*{-0.00248*TEMP+1.062}} KP={-0.012*TEMP+8.7} + THETA=0.086 VMAX=5E5 TOX=4.25E-8 LEVEL=3) Cgs 1 3 500p Rd 20 4 8m TC=0.004 Dds 4 3 DDS .MODEL DDS D(BV={30*{0.00064*TEMP+0.984}} M=0.25 CJO=310p VJ=0.51) Dbody 20 3 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=90m TT=29n) Ra 4 2 8m TC=0.004 Rs 3 5 2m Ls 5 30 0.9n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER PMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1150p Rcgd 7 4 10meg Dgd 4 6 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.31 CJO=1150p VJ=0.18) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDS8858HP * * NDS8858H N-Ch ELECTRICAL MODEL * --------------------------- .SUBCKT NDS8858HN 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.6*{-0.0028*TEMP+1.07}} KP={-0.02*TEMP+13} + THETA=0.086 VMAX=5E5 LEVEL=3) Cgs 1 3 400p Rd 20 4 5m TC=0.0036 Dds 3 4 DDS .MODEL DDS D(BV={30*{0.0008*TEMP+0.98}} M=0.35 CJO=290p VJ=0.9) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=40m TT=70n) Ra 4 2 5m TC=0.0036 Rs 3 5 1m Ls 5 30 0.9n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1250p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.325 CJO=1250p VJ=0.039) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDS8858HN * * * NDS8858H THERMAL MODEL * ------------------------ .SUBCKT 8858HTHM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*105*V(90,40)}; Tja=Pave(t)*RJA*rja(t) R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDS8858H Single Pulsed rja(t) + (0.0001, 0.002232) + (0.0002, 0.003156) + (0.0005, 0.00499) + (0.001, 0.007057) + (0.002, 0.00998) + (0.005, 0.01578)+ (0.01, 0.022316) + (0.02, 0.03156) + (0.05, 0.049901) + (0.1, 0.070571) + (0.2, 0.099802) + (0.5, 0.157801)+ (1, 0.223165) + (2, 0.304706) + (5, 0.430226) + (10, 0.532168) + (20, 0.641667) + (50, 0.789139) + (100, 0.876999) + (200, 0.940897) + (500, 1) + (999, 1) .ENDS 8858HTHM * ================================================================= * NDS8435 ELECTRICAL MODEL (SO-8 Single P-Ch DMOS) * ------------------------ .SUBCKT NDS8435 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS PMOS (VTO={-2.1*{-0.0024*TEMP+1.06}} KP={-0.02*TEMP+20} + THETA=0.086 VMAX=2.0E5 LEVEL=3) Cgs 1 3 800p Rd 20 4 8m TC=0.0044 Dds 4 3 DDS .MODEL DDS D(BV={30*{0.00056*TEMP+0.986}} M=0.35 CJO=1000p VJ=0.8) Dbody 20 3 DBODY .MODEL DBODY D(IS=1E-12 N=1 RS=12.7m TT=25n) Ra 4 2 5m TC=0.0044 Rs 3 5 8m Ls 5 30 0.9n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER PMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 3300p Rcgd 7 4 10meg Dgd 4 6 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.55 CJO=3300p VJ=0.120) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDS8435 * * * NDS8435 THERMAL MODEL * --------------------- .SUBCKT 8435THM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*105*V(90,40)}; Tja=Pave(t)*RJA*rja(t) R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDS9435 Single Pulsed rja(t) + (0.0001, 0.002232) + (0.0002, 0.003156) + (0.0005, 0.00499) + (0.001, 0.007057) + (0.002, 0.00998) + (0.005, 0.01578) + (0.01, 0.022316) + (0.02, 0.03156) + (0.05, 0.049901) + (0.1, 0.070571) + (0.2, 0.099802) + (0.5, 0.157801) + (1, 0.223165) + (2, 0.304706) + (5, 0.430226) + (10, 0.532168) + (20, 0.641667) + (50, 0.789139) + (100, 0.876999) + (200, 0.940897) + (500, 1) + (999, 1) .ENDS 8435THM * * NDS8926 ELECTRICAL MODEL (SO-8 Dual N-Ch DMOS) * ------------------------ .SUBCKT NDS8926 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={0.7*{-0.00424*TEMP+1.106}} KP={-0.025*TEMP+17.125} + THETA=0.086 VMAX=5E5 LEVEL=3) Cgs 1 3 950p Rd 20 4 4m TC=0.00384 Dds 3 4 DDS .MODEL DDS D(BV={20*{0.00072*TEMP+0.982}} M=0.35 CJO=600p VJ=0.9) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=40m TT=70n) Ra 4 2 5m TC=0.00384 Rs 3 5 1m Ls 5 30 0.9n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 3050p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.325 CJO=1450p VJ=0.039) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDS8926 * * * NDS8926 Single Pulse THERMAL MODEL * ---------------------------------- .SUBCKT 8926THM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*125*V(90,40)}; Tja=Pave(t)*RJA*rja(t) R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDS8926 Single Pulsed Rja + (0.0001, 0.002232) + (0.0002, 0.003156) + (0.0005, 0.00499) + (0.001, 0.007057) + (0.002, 0.00998) + (0.005, 0.01578) + (0.01, 0.022316) + (0.02, 0.03156) + (0.05, 0.049901) + (0.1, 0.070571) + (0.2, 0.099802) + (0.5, 0.157801) + (1, 0.223165) + (2, 0.304706) + (5, 0.430226) + (10, 0.532168) + (20, 0.641667) + (50, 0.789139) + (100, 0.876999) + (200, 0.940897) + (500, 1) + (999, 1) .ENDS 8926THM * * NDS8928 ELECTRICAL MODEL (SO-8 N and P-Channel DMOS) * ------------------------ .SUBCKT NDS8928N 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={0.6*{-0.00424*TEMP+1.106}} KP={-0.09*TEMP+61.25} + THETA=0.086 VMAX=5E5 LEVEL=3) Cgs 1 3 400p Rd 20 4 2m TC=0.004 Dds 3 4 DDS .MODEL DDS D(BV={20*{0.00072*TEMP+0.982}} M=0.35 CJO=290p VJ=0.9) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=40m TT=70n) Ra 4 2 4m TC=0.004 Rs 3 5 1m Ls 5 30 0.9n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1450p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.325 CJO=750p VJ=0.039) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDS8928N * .SUBCKT NDS8928P 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS PMOS (VTO={-0.9*{-0.00336*TEMP+1.084}} KP={-0.04*TEMP+48} + THETA=0.086 VMAX=2.0E5 LEVEL=3) Cgs 1 3 3100p Rd 20 4 12m TC=0.00416 Dds 4 3 DDS .MODEL DDS D(BV={20*{0.000624*TEMP+0.9844}} M=0.35 CJO=2600p VJ=0.8) Dbody 20 3 DBODY .MODEL DBODY D(IS=1E-12 N=1 RS=12.7m TT=25n) Ra 4 2 12m TC=0.00416 Rs 3 5 8m Ls 5 30 0.9n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER PMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 5100p Rcgd 7 4 10meg Dgd 4 6 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.55 CJO=3800p VJ=0.120) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDS8928P * * * NDS8928 Single Pulse THERMAL MODEL * ---------------------------------- .SUBCKT 8928THM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*125*V(90,40)}; Tja=Pave(t)*RJA*rja(t) R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDS8928 Single Pulsed Rja + (0.0001, 0.002232) + (0.0002, 0.003156) + (0.0005, 0.00499) + (0.001, 0.007057) + (0.002, 0.00998) + (0.005, 0.01578) + (0.01, 0.022316) + (0.02, 0.03156) + (0.05, 0.049901) + (0.1, 0.070571) + (0.2, 0.099802) + (0.5, 0.157801) + (1, 0.223165) + (2, 0.304706) + (5, 0.430226) + (10, 0.532168) + (20, 0.641667) + (50, 0.789139) + (100, 0.876999) + (200, 0.940897) + (500, 1) + (999, 1) .ENDS 8928THM * * NDS8934 ELECTRICAL MODEL (SO-8 Single P-Ch DMOS) * ------------------------ .SUBCKT NDS8934 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS PMOS (VTO={-1.05*{-0.00296*TEMP+1.074}} KP={-0.02*TEMP+19.5} + THETA=0.086 VMAX=2.0E5 LEVEL=3) Cgs 1 3 1400p Rd 20 4 15m TC=0.00384 Dds 4 3 DDS .MODEL DDS D(BV={20*{0.0006*TEMP+0.985}} M=0.35 CJO=1200p VJ=0.8) Dbody 20 3 DBODY .MODEL DBODY D(IS=1E-12 N=1 RS=12.7m TT=25n) Ra 4 2 12m TC=0.00384 Rs 3 5 8m Ls 5 30 0.9n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER PMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 2500p Rcgd 7 4 10meg Dgd 4 6 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.55 CJO=1900p VJ=0.120) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDS8934 * * * NDS8934 THERMAL MODEL * --------------------- .SUBCKT 8934THM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*105*V(90,40)}; Tja=Pave(t)*RJA*rja(t) R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDS8934 Single Pulsed rja(t) + (0.0001, 0.002232) + (0.0002, 0.003156) + (0.0005, 0.00499) + (0.001, 0.007057) + (0.002, 0.00998) + (0.005, 0.01578) + (0.01, 0.022316) + (0.02, 0.03156) + (0.05, 0.049901) + (0.1, 0.070571) + (0.2, 0.099802) + (0.5, 0.157801) + (1, 0.223165) + (2, 0.304706) + (5, 0.430226) + (10, 0.532168) + (20, 0.641667) + (50, 0.789139) + (100, 0.876999) + (200, 0.940897) + (500, 1) + (999, 1) .ENDS 8934THM * *======================================================================= * * NDS8936 ELECTRICAL MODEL (SO-8 Dual N-Ch DMOS) * ------------------------ .SUBCKT NDS8936 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.6*{-0.00272*TEMP+1.068}} KP={-0.022*TEMP+12.95} + THETA=0.086 VMAX=5E5 LEVEL=3) Cgs 1 3 400p Rd 20 4 5m TC=0.00368 Dds 3 4 DDS .MODEL DDS D(BV={30*{0.0008*TEMP+0.98}} M=0.35 CJO=290p VJ=0.9) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=40m TT=70n) Ra 4 2 5m TC=0.00368 Rs 3 5 1m Ls 5 30 0.9n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1250p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.325 CJO=1250p VJ=0.039) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDS8936 * * * NDS8936 Single Pulse THERMAL MODEL * ---------------------------------- .SUBCKT 8936THM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*125*V(90,40)}; Tja=Pave(t)*RJA*rja(t) R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDS8936 Single Pulsed Rja + (0.0001, 0.002232) + (0.0002, 0.003156) + (0.0005, 0.00499) + (0.001, 0.007057) + (0.002, 0.00998) + (0.005, 0.01578) + (0.01, 0.022316) + (0.02, 0.03156) + (0.05, 0.049901) + (0.1, 0.070571) + (0.2, 0.099802) + (0.5, 0.157801) + (1, 0.223165) + (2, 0.304706) + (5, 0.430226) + (10, 0.532168) + (20, 0.641667) + (50, 0.789139) + (100, 0.876999) + (200, 0.940897) + (500, 1) + (999, 1) .ENDS 8936THM * *======================================================================= * * NDS8947 ELECTRICAL MODEL (SO-8 Dual P-Ch DMOS) * --------------------------- .SUBCKT NDS8947 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS PMOS (VTO={-1.6*{-0.00252*TEMP+1.063}} KP={-0.012*TEMP+8.7} + THETA=0.086 VMAX=5E5 TOX=4.25E-8 LEVEL=3) Cgs 1 3 500p Rd 20 4 8m TC=0.00384 Dds 4 3 DDS .MODEL DDS D(BV={30*{0.00064*TEMP+0.984}} M=0.25 CJO=310p VJ=0.51) Dbody 20 3 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=90m TT=29n) Ra 4 2 8m TC=0.00384 Rs 3 5 2m Ls 5 30 0.9n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER PMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1150p Rcgd 7 4 10meg Dgd 4 6 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.31 CJO=1150p VJ=0.18) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDS8947 * * * NDS8947 THERMAL MODEL * ------------------------ .SUBCKT 8947THM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*125*V(90,40)}; Tja=Pave(t)*RJA*rja(t) R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDS8947 Single Pulse rja(t) + (0.0001, 0.002232) + (0.0002, 0.003156) + (0.0005, 0.00499) + (0.001, 0.007057) + (0.002, 0.00998) + (0.005, 0.01578) + (0.01, 0.022316) + (0.02, 0.03156) + (0.05, 0.049901) + (0.1, 0.070571) + (0.2, 0.099802) + (0.5, 0.157801) + (1, 0.223165) + (2, 0.304706) + (5, 0.430226) + (10, 0.532168) + (20, 0.641667) + (50, 0.789139) + (100, 0.876999) + (200, 0.940897) + (500, 1) + (999, 1) .ENDS 8947THM * * NDS8958 ELECTRICAL MODEL (SO-8 P and N-Ch DMOS) * ------------------------ .SUBCKT NDS8958N 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.6*{-0.00272*TEMP+1.068}} KP={-0.022*TEMP+12.95} + THETA=0.086 VMAX=5E5 LEVEL=3) Cgs 1 3 400p Rd 20 4 5m TC=0.00368 Dds 3 4 DDS .MODEL DDS D(BV={30*{0.0008*TEMP+0.98}} M=0.35 CJO=290p VJ=0.9) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=40m TT=70n) Ra 4 2 5m TC=0.00368 Rs 3 5 1m Ls 5 30 0.9n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1250p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.325 CJO=1250p VJ=0.039) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDS8958N * .SUBCKT NDS8958P 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS PMOS (VTO={-1.6*{-0.00252*TEMP+1.063}} KP={-0.012*TEMP+8.7} + THETA=0.086 VMAX=5E5 TOX=4.25E-8 LEVEL=3) Cgs 1 3 500p Rd 20 4 8m TC=0.00384 Dds 4 3 DDS .MODEL DDS D(BV={30*{0.00064*TEMP+0.984}} M=0.25 CJO=310p VJ=0.51) Dbody 20 3 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=90m TT=29n) Ra 4 2 8m TC=0.00384 Rs 3 5 2m Ls 5 30 0.9n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER PMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1150p Rcgd 7 4 10meg Dgd 4 6 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.31 CJO=1150p VJ=0.18) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDS8958P * * * NDS8958 Single Pulse THERMAL MODEL * ---------------------------------- .SUBCKT 8958THM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*125*V(90,40)}; Tja=Pave(t)*RJA*rja(t) R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDS8958 Single Pulsed Rja + (0.0001, 0.002232) + (0.0002, 0.003156) + (0.0005, 0.00499) + (0.001, 0.007057) + (0.002, 0.00998) + (0.005, 0.01578) + (0.01, 0.022316) + (0.02, 0.03156) + (0.05, 0.049901) + (0.1, 0.070571) + (0.2, 0.099802) + (0.5, 0.157801) + (1, 0.223165) + (2, 0.304706) + (5, 0.430226) + (10, 0.532168) + (20, 0.641667) + (50, 0.789139) + (100, 0.876999) + (200, 0.940897) + (500, 1) + (999, 1) .ENDS 8958THM *======================================================================= * * NDS9400 ELECTRICAL MODEL (SO-8 Single P-Ch DMOS) * ------------------------ .SUBCKT NDS9400 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS PMOS (VTO={-1.9*{-0.00216*TEMP+1.054}} KP={-0.005*TEMP+4.525} + THETA=0.086 VMAX=5.0E5 LEVEL=3) Cgs 1 3 210p Rd 20 4 60m TC=0.0036 Dds 4 3 DDS .MODEL DDS D(BV={20*{0.00064*TEMP+0.984}} M=0.35 CJO=1000p VJ=1.0) Dbody 20 3 DBODY .MODEL DBODY D(IS=1E-12 N=1 RS=12.7m TT=25n) Ra 4 2 65m TC=0.0036 Rs 3 5 10m Ls 5 30 0.9n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER PMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1130p Rcgd 7 4 10meg Dgd 4 6 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.55 CJO=1130p VJ=0.120) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDS9400 * NDS9400 THERMAL MODEL * --------------------- .SUBCKT 9400THM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*105*V(90,40)}; Tja=Pave(t)*RJA*rja(t) R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDS9400 Single Pulse rja(t) + (0.0001, 0.002232) + (0.0002, 0.003156) + (0.0005, 0.00499) + (0.001, 0.007057) + (0.002, 0.00998) + (0.005, 0.01578) + (0.01, 0.022316) + (0.02, 0.03156) + (0.05, 0.049901) + (0.1, 0.070571) + (0.2, 0.099802) + (0.5, 0.157801) + (1, 0.223165) + (2, 0.304706) + (5, 0.430226) + (10, 0.532168) + (20, 0.641667) + (50, 0.789139) + (100, 0.876999) + (200, 0.940897) + (500, 1) + (999, 1) .ENDS 9400THM * *======================================================================= * * NDS9400A ELECTRICAL MODEL (SO-8 Single P Ch DMOS) * ------------------------ .SUBCKT NDS9400A 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS PMOS (VTO={-1.8*{-0.00216*TEMP+1.054}} KP={-0.005*TEMP+4.525} + THETA=0.086 VMAX=5E5 TOX=4.25E-8 LEVEL=3) Cgs 1 3 400p Rd 20 4 30m TC=0.0036 Dds 4 3 DDS .MODEL DDS D(BV={30*{0.00064*TEMP+0.984}} M=0.3 CJO=300p VJ=0.9) Dbody 20 3 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=40m TT=29n) Ra 4 2 30m TC=0.0036 Rs 3 5 1m Ls 5 30 0.9n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER PMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 600p Rcgd 7 4 20meg Dgd 4 6 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.5 CJO=600p VJ=0.12) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDS9400A * * * NDS9400A THERMAL MODEL * --------------------- .SUBCKT 9400ATHM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*105*V(90,40)}; Tja=Pave(t)*RJA*rja(t) R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDS9400A Single Pulse rja(t) + (0.0001, 0.002232) + (0.0002, 0.003156) + (0.0005, 0.00499) + (0.001, 0.007057) + (0.002, 0.00998) + (0.005, 0.01578) + (0.01, 0.022316) + (0.02, 0.03156) + (0.05, 0.049901) + (0.1, 0.070571) + (0.2, 0.099802) + (0.5, 0.157801) + (1, 0.223165) + (2, 0.304706) + (5, 0.430226) + (10, 0.532168) + (20, 0.641667) + (50, 0.789139) + (100, 0.876999) + (200, 0.940897) + (500, 1) + (999, 1) .ENDS 9400ATHM * *======================================================================= * NDS9405 ELECTRICAL MODEL (SO-8 Single P-Ch DMOS) * ------------------------ .SUBCKT NDS9405 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS PMOS (VTO={-1.65*{-0.0018*TEMP+1.045}} KP={-0.02*TEMP+12} + THETA=0.086 VMAX=2.0E5 LEVEL=3) Cgs 1 3 900p Rd 20 4 8m TC=0.0032 Dds 4 3 DDS .MODEL DDS D(BV={20*{0.00088*TEMP+0.978}} M=0.35 CJO=1000p VJ=1.0) Dbody 20 3 DBODY .MODEL DBODY D(IS=1E-12 N=1 RS=12.7m TT=25n) Ra 4 2 15m TC=0.0032 Rs 3 5 10.5m Ls 5 30 0.9n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER PMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 2800p Rcgd 7 4 10meg Dgd 4 6 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.55 CJO=2800p VJ=0.120) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDS9405 * NDS9405 THERMAL MODEL * --------------------- .SUBCKT 9405THM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*105*V(90,40)}; Tja=Pave(t)*RJA*rja(t) R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDS9405 Single Pulsed rja(t) + (0.0001, 0.002232) + (0.0002, 0.003156) + (0.0005, 0.00499) + (0.001, 0.007057) + (0.002, 0.00998) + (0.005, 0.01578) + (0.01, 0.022316) + (0.02, 0.03156) + (0.05, 0.049901) + (0.1, 0.070571) + (0.2, 0.099802) + (0.5, 0.157801) + (1, 0.223165) + (2, 0.304706) + (5, 0.430226) + (10, 0.532168) + (20, 0.641667) + (50, 0.789139) + (100, 0.876999) + (200, 0.940897) + (500, 1) + (999, 1) .ENDS 9405THM * * NDS9407 ELECTRICAL MODEL (SO-8 Single P-Ch DMOS) * ------------------------ .SUBCKT NDS9407 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS PMOS (VTO={-2.65*{-0.00168*TEMP+1.042}} KP={-0.014*TEMP+11.85} + THETA=0.086 VMAX=2.0E5 LEVEL=3) Cgs 1 3 1300p Rd 20 4 23m TC=0.0056 Dds 4 3 DDS .MODEL DDS D(BV={60*{0.00088*TEMP+0.978}} M=0.35 CJO=800p VJ=0.8) Dbody 20 3 DBODY .MODEL DBODY D(IS=1E-12 N=1 RS=12.7m TT=25n) Ra 4 2 38m TC=0.0056 Rs 3 5 8m Ls 5 30 0.9n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER PMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 2200p Rcgd 7 4 10meg Dgd 4 6 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.55 CJO=1800p VJ=0.120) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDS9407 * * * NDS9407 THERMAL MODEL * --------------------- .SUBCKT 9407THM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*105*V(90,40)}; Tja=Pave(t)*RJA*rja(t) R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDS9407 Single Pulsed rja(t) + (0.0001, 0.002232) + (0.0002, 0.003156) + (0.0005, 0.00499) + (0.001, 0.007057) + (0.002, 0.00998) + (0.005, 0.01578) + (0.01, 0.022316) + (0.02, 0.03156) + (0.05, 0.049901) + (0.1, 0.070571) + (0.2, 0.099802) + (0.5, 0.157801) + (1, 0.223165) + (2, 0.304706) + (5, 0.430226) + (10, 0.532168) + (20, 0.641667) + (50, 0.789139) + (100, 0.876999) + (200, 0.940897) + (500, 1) + (999, 1) .ENDS 9407THM * *======================================================================= * * NDS9410 ELECTRICAL MODEL (SO-8 Single N-Ch DMOS) * ------------------------ .SUBCKT NDS9410 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.7*{-0.00248*TEMP+1.062}} KP={-0.025*TEMP+15.625} + THETA=0.086 VMAX=5E5 LEVEL=3) Cgs 1 3 800p Rd 20 4 4m TC=0.00384 Dds 3 4 DDS .MODEL DDS D(BV={30*{0.00072*TEMP+0.982}} M=0.3 CJO=1000p VJ=0.8) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=40m TT=100n) Ra 4 2 5m TC=0.00384 Rs 3 5 1m Ls 5 30 0.9n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 2600p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.5 CJO=3000p VJ=0.12) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDS9410 * * * NDS9410 THERMAL MODEL * --------------------- .SUBCKT 9410THM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*105*V(90,40)}; Tja=Pave(t)*RJA*rja(t) R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDS9410 Single Pulsed rja(t) + (0.0001, 0.002232) + (0.0002, 0.003156) + (0.0005, 0.00499) + (0.001, 0.007057) + (0.002, 0.00998) + (0.005, 0.01578) + (0.01, 0.022316) + (0.02, 0.03156) + (0.05, 0.049901) + (0.1, 0.070571) + (0.2, 0.099802) + (0.5, 0.157801) + (1, 0.223165) + (2, 0.304706) + (5, 0.430226) + (10, 0.532168) + (20, 0.641667) + (50, 0.789139) + (100, 0.876999) + (200, 0.940897) + (500, 1) + (999, 1) .ENDS 9410THM * *======================================================================= * NDS9430 ELECTRICAL MODEL (SO-8 Single P-Ch DMOS) * ------------------------ .SUBCKT NDS9430 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS PMOS (VTO={-1.65*{-0.0018*TEMP+1.045}} KP={-0.02*TEMP+12} + THETA=0.086 VMAX=2.0E5 LEVEL=3) Cgs 1 3 800p Rd 20 4 8m TC=0.0032 Dds 4 3 DDS .MODEL DDS D(BV={20*{0.00088*TEMP+0.978}} M=0.35 CJO=1000p VJ=1.0) Dbody 20 3 DBODY .MODEL DBODY D(IS=1E-12 N=1 RS=12.7m TT=25n) Ra 4 2 8m TC=0.0032 Rs 3 5 11.8m Ls 5 30 0.9n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER PMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 2600p Rcgd 7 4 10meg Dgd 4 6 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.55 CJO=2600p VJ=0.120) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDS9430 * * * NDS9430 THERMAL MODEL * --------------------- .SUBCKT 9430THM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*105*V(90,40)}; Tja=Pave(t)*RJA*rja(t) R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDS9430 Single Pulsed rja(t) + (0.0001, 0.002232) + (0.0002, 0.003156) + (0.0005, 0.00499) + (0.001, 0.007057) + (0.002, 0.00998) + (0.005, 0.01578) + (0.01, 0.022316) + (0.02, 0.03156) + (0.05, 0.049901) + (0.1, 0.070571) + (0.2, 0.099802) + (0.5, 0.157801) + (1, 0.223165) + (2, 0.304706) + (5, 0.430226) + (10, 0.532168) + (20, 0.641667) + (50, 0.789139) + (100, 0.876999) + (200, 0.940897) + (500, 1) + (999, 1) .ENDS 9430THM *======================================================================= * * NDS9435 ELECTRICAL MODEL (SO-8 Single P-Ch DMOS) * ------------------------ .SUBCKT NDS9435 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS PMOS (VTO={-2.0*{-0.00252*TEMP+1.063}} KP={-0.02*TEMP+14.5} + THETA=0.086 VMAX=2.0E5 LEVEL=3) Cgs 1 3 400p Rd 20 4 10.67m TC=0.0044 Dds 4 3 DDS .MODEL DDS D(BV={30*{0.00064*TEMP+0.984}} M=0.35 CJO=1000p VJ=0.8) Dbody 20 3 DBODY .MODEL DBODY D(IS=1E-12 N=1 RS=12.7m TT=25n) Ra 4 2 22m TC=0.0044 Rs 3 5 11.8m Ls 5 30 0.9n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER PMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 2600p Rcgd 7 4 10meg Dgd 4 6 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.55 CJO=5000p VJ=0.120) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDS9435 * * * NDS9435 THERMAL MODEL * --------------------- .SUBCKT 9435THM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*105*V(90,40)}; Tja=Pave(t)*RJA*rja(t) R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDS9435 Single Pulsed rja(t) + (0.0001, 0.002232) + (0.0002, 0.003156) + (0.0005, 0.00499) + (0.001, 0.007057) + (0.002, 0.00998) + (0.005, 0.01578) + (0.01, 0.022316) + (0.02, 0.03156) + (0.05, 0.049901) + (0.1, 0.070571) + (0.2, 0.099802) + (0.5, 0.157801) + (1, 0.223165) + (2, 0.304706) + (5, 0.430226) + (10, 0.532168) + (20, 0.641667) + (50, 0.789139) + (100, 0.876999) + (200, 0.940897) + (500, 1) + (999, 1) .ENDS 9435THM * * NDS9933 ELECTRICAL MODEL (SO-8 Single P-Ch DMOS) * ------------------------ .SUBCKT NDS9933 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS PMOS (VTO={-1.3*{-0.00224*TEMP+1.056}} KP={-0.013*TEMP+11.125} + THETA=0.086 VMAX=2.0E5 LEVEL=3) Cgs 1 3 1000p Rd 20 4 8m TC=0.00336 Dds 4 3 DDS .MODEL DDS D(BV={20*{0.000384*TEMP+0.9904}} M=0.35 CJO=800p VJ=0.8) Dbody 20 3 DBODY .MODEL DBODY D(IS=1E-12 N=1 RS=12.7m TT=25n) Ra 4 2 12m TC=0.00336 Rs 3 5 8m Ls 5 30 0.9n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER PMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1500p Rcgd 7 4 10meg Dgd 4 6 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.55 CJO=1000p VJ=0.120) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDS9933 * * * NDS9933 THERMAL MODEL * --------------------- .SUBCKT 9933THM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*105*V(90,40)}; Tja=Pave(t)*RJA*rja(t) R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDS9933 Single Pulsed rja(t) + (0.0001, 0.002232) + (0.0002, 0.003156) + (0.0005, 0.00499) + (0.001, 0.007057) + (0.002, 0.00998) + (0.005, 0.01578) + (0.01, 0.022316) + (0.02, 0.03156) + (0.05, 0.049901) + (0.1, 0.070571) + (0.2, 0.099802) + (0.5, 0.157801) + (1, 0.223165) + (2, 0.304706) + (5, 0.430226) + (10, 0.532168) + (20, 0.641667) + (50, 0.789139) + (100, 0.876999) + (200, 0.940897) + (500, 1) + (999, 1) .ENDS 9933THM * *======================================================================= * * NDS9936 ELECTRICAL MODEL ( SO-8 Dual N-Ch DMOS) * ------------------------ .SUBCKT NDS9936 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.5*{-0.00272*TEMP+1.068}} KP={-0.02*TEMP+9} + THETA=0.086 VMAX=5E5 LEVEL=3) Cgs 1 3 359p Rd 20 4 10m TC=0.00416 Dds 3 4 DDS .MODEL DDS D(BV={20*{0.0008*TEMP+0.98}} M=0.35 CJO=290p VJ=0.9) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=40m TT=70n) Ra 4 2 21m TC=0.00416 Rs 3 5 1m Ls 5 30 0.9n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1050p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.325 CJO=1050p VJ=0.039) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDS9936 * * * NDS9936 THERMAL MODEL * --------------------- .SUBCKT 9936THM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*125*V(90,40)}; Tja=Pave(t)*RJA*rja(t) R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDS9936 Single Pulsed rja(t) + (0.0001, 0.002232) + (0.0002, 0.003156) + (0.0005, 0.00499) + (0.001, 0.007057) + (0.002, 0.00998) + (0.005, 0.01578) + (0.01, 0.022316) + (0.02, 0.03156) + (0.05, 0.049901) + (0.1, 0.070571) + (0.2, 0.099802) + (0.5, 0.157801) + (1, 0.223165) + (2, 0.304706) + (5, 0.430226) + (10, 0.532168) + (20, 0.641667) + (50, 0.789139) + (100, 0.876999) + (200, 0.940897) + (500, 1) + (999, 1) .ENDS 9936THM *======================================================================= *( SO-8 Complementary P & N-Ch DMOS) * NDS9942 ELECTRICAL MODEL * ------------------------ .SUBCKT NDS9942P 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS PMOS (VTO={-1.9*{-0.0016*TEMP+1.04}} KP={-0.009*TEMP+5.425} + THETA=0.086 VMAX=5.0E5 LEVEL=3) Cgs 1 3 210p Rd 20 4 60m TC=0.00384 Dds 4 3 DDS .MODEL DDS D(BV={20*{0.00072*TEMP+0.982}} M=0.35 CJO=1000p VJ=1.0) Dbody 20 3 DBODY .MODEL DBODY D(IS=1E-12 N=1 RS=12.7m TT=25n) Ra 4 2 65m TC=0.00384 Rs 3 5 10m Ls 5 30 0.9n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER PMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1130p Rcgd 7 4 10meg Dgd 4 6 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.55 CJO=1130p VJ=0.120) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDS9942P * * .SUBCKT NDS9942N 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.5*{-0.00272*TEMP+1.068}} KP={-0.02*TEMP+9} + THETA=0.086 VMAX=5E5 LEVEL=3) Cgs 1 3 359p Rd 20 4 10m TC=0.00416 Dds 3 4 DDS .MODEL DDS D(BV={20*{0.0008*TEMP+0.98}} M=0.35 CJO=290p VJ=0.9) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=40m TT=70n) Ra 4 2 21m TC=0.00416 Rs 3 5 1m Ls 5 30 0.9n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1050p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.325 CJO=1050p VJ=0.039) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDS9942N * * * NDS9942 THERMAL MODEL * --------------------- .SUBCKT 9942THM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*125*V(90,40)}; Tja=Pave(t)*RJA*rja(t) R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDS9942 Single Pulsed rja(t) + (0.0001, 0.002232) + (0.0002, 0.003156) + (0.0005, 0.00499) + (0.001, 0.007057) + (0.002, 0.00998) + (0.005, 0.01578) + (0.01, 0.022316) + (0.02, 0.03156) + (0.05, 0.049901) + (0.1, 0.070571) + (0.2, 0.099802) + (0.5, 0.157801) + (1, 0.223165) + (2, 0.304706) + (5, 0.430226)+ (10, 0.532168) + (20, 0.641667) + (50, 0.789139) + (100, 0.876999) + (200, 0.940897) + (500, 1) + (999, 1) .ENDS 9942THM * *======================================================================= *( SO-8 Complementary P & N-Ch DMOS) * NDS9943 ELECTRICAL MODEL (N-CHANNEL) * ------------------------ .SUBCKT NDS9943N 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.5*{-0.00272*TEMP+1.068}} KP={-0.02*TEMP+9} + THETA=0.086 VMAX=5E5 LEVEL=3) Cgs 1 3 359p Rd 20 4 10m TC=0.00416 Dds 3 4 DDS .MODEL DDS D(BV={20*{0.0008*TEMP+0.98}} M=0.35 CJO=290p VJ=0.9) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=40m TT=70n) Ra 4 2 21m TC=0.00416 Rs 3 5 1m Ls 5 30 0.9n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1050p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.325 CJO=1050p VJ=0.039) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDS9943N * * .SUBCKT NDS9943P 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS PMOS (VTO={-1.9*{-0.0016*TEMP+1.04}} KP={-0.009*TEMP+5.425} + THETA=0.086 VMAX=5.0E5 LEVEL=3) Cgs 1 3 210p Rd 20 4 60m TC=0.00384 Dds 4 3 DDS .MODEL DDS D(BV={20*{0.00072*TEMP+0.982}} M=0.35 CJO=1000p VJ=1.0) Dbody 20 3 DBODY .MODEL DBODY D(IS=1E-12 N=1 RS=12.7m TT=25n) Ra 4 2 65m TC=0.00384 Rs 3 5 10m Ls 5 30 0.9n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER PMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1130p Rcgd 7 4 10meg Dgd 4 6 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.55 CJO=1130p VJ=0.120) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDS9943P * * * * NDS9943 THERMAL MODEL * --------------------- .SUBCKT 9943THM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*125*V(90,40)}; Tja=Pave(t)*RJA*rja(t) R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDS9943 Single Pulsed rja(t) + (0.0001, 0.002232) + (0.0002, 0.003156) + (0.0005, 0.00499) + (0.001, 0.007057) + (0.002, 0.00998) + (0.005, 0.01578) + (0.01, 0.022316) + (0.02, 0.03156) + (0.05, 0.049901) + (0.1, 0.070571) + (0.2, 0.099802) + (0.5, 0.157801) + (1, 0.223165) + (2, 0.304706) + (5, 0.430226) + (10, 0.532168) + (20, 0.641667) + (50, 0.789139) + (100, 0.876999) + (200, 0.940897) + (500, 1) + (999, 1) .ENDS 9943THM * *======================================================================= * * NDS9945 ELECTRICAL MODEL ( SO-8 Dual N-Ch DMOS) * ------------------------ .SUBCKT NDS9945 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.5*{-0.00272*TEMP+1.068}} KP={-0.015*TEMP+7.375} + THETA=0.086 VMAX=3E5 LEVEL=3) Cgs 1 3 405p Rd 20 4 24m TC=0.00496 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.0008*TEMP+0.98}} M=0.3 CJO=252p VJ=0.8) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=43m TT=52n) Ra 4 2 28m TC=0.00496 Rs 3 5 1m Ls 5 30 0.9n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 700p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.53 CJO=700p VJ=0.12) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDS9945 * * * NDS9945 THERMAL MODEL * --------------------- .SUBCKT 9945THM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*125*V(90,40)}; Tja=Pave(t)*RJA*rja(t) R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDS9945 Single Pulsed rja(t) + (0.0001, 0.002232) + (0.0002, 0.003156) + (0.0005, 0.00499) + (0.001, 0.007057) + (0.002, 0.00998) + (0.005, 0.01578) + (0.01, 0.022316) + (0.02, 0.03156) + (0.05, 0.049901) + (0.1, 0.070571) + (0.2, 0.099802) + (0.5, 0.157801) + (1, 0.223165) + (2, 0.304706) + (5, 0.430226) + (10, 0.532168) + (20, 0.641667) + (50, 0.789139) + (100, 0.876999) + (200, 0.940897) + (500, 1) + (999, 1) .ENDS 9945THM * *======================================================================= * * NDS9947 ELECTRICAL MODEL (SO-8 Dual P-Ch DMOS) * ------------------------ .SUBCKT NDS9947 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS PMOS (VTO={-2.2*{-0.00136*TEMP+1.034}} KP={-0.01*TEMP+6.55} + THETA=0.086 VMAX=5E5 TOX=4.25E-8 LEVEL=3) Cgs 1 3 200p Rd 20 4 15m TC=0.00336 Dds 4 3 DDS .MODEL DDS D(BV={20*{0.00064*TEMP+0.984}} M=0.25 CJO=300p VJ=0.51) Dbody 20 3 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=90m TT=29n) Ra 4 2 10m TC=0.00336 Rs 3 5 2m Ls 5 30 0.9n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER PMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1230p Rcgd 7 4 10meg Dgd 4 6 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.31 CJO=1230p VJ=0.18) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDS9947 * * * NDS9947 THERMAL MODEL * --------------------- .SUBCKT 9947THM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*125*V(90,40)}; Tja=Pave(t)*RJA*rja(t) R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDS9947 Single Pulsed rja(t) + (0.0001, 0.002232) + (0.0002, 0.003156) + (0.0005, 0.00499) + (0.001, 0.007057) + (0.002, 0.00998) + (0.005, 0.01578) + (0.01, 0.022316) + (0.02, 0.03156) + (0.05, 0.049901) + (0.1, 0.070571) + (0.2, 0.099802) + (0.5, 0.157801) + (1, 0.223165) + (2, 0.304706) + (5, 0.430226) + (10, 0.532168) + (20, 0.641667) + (50, 0.789139) + (100, 0.876999) + (200, 0.940897) + (500, 1) + (999, 1) .ENDS 9947THM * *======================================================================= * NDS9948 ELECTRICAL MODEL (SO-8 Dual P Ch DMOS) * ------------------------ .SUBCKT NDS9948 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS PMOS (VTO={-2.8*{-0.00156*TEMP+1.039}} KP={-0.006*TEMP+4.45} + THETA=0.086 VMAX=5E5 LEVEL=3) Cgs 1 3 400p Rd 20 4 60m TC=0.004 Dds 4 3 DDS .MODEL DDS D(BV={60*{0.00092*TEMP+0.977}} M=0.3 CJO=300p VJ=0.9) Dbody 20 3 DBODY .MODEL DBODY D(IS=1.4E-14 N=1 RS=40m TT=29n) Ra 4 2 80m TC=0.004 Rs 3 5 1m Ls 5 30 0.9n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER PMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 950p Rcgd 7 4 20meg Dgd 4 6 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.5 CJO=950p VJ=0.12) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDS9948 * * * NDS9948 THERMAL MODEL * --------------------- .SUBCKT 9948THM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*125*V(90,40)}; Tja=Pave(t)*RJA*rja(t) R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDS9948 Single Pulsed rja(t) + (0.0001, 0.002232) + (0.0002, 0.003156) + (0.0005, 0.00499) + (0.001, 0.007057) + (0.002, 0.00998) + (0.005, 0.01578) + (0.01, 0.022316) + (0.02, 0.03156) + (0.05, 0.049901) + (0.1, 0.070571) + (0.2, 0.099802) + (0.5, 0.157801) + (1, 0.223165) + (2, 0.304706) + (5, 0.430226) + (10, 0.532168) + (20, 0.641667) + (50, 0.789139) + (100, 0.876999) + (200, 0.940897) + (500, 1) + (999, 1) .ENDS 9948THM * *======================================================================= *( SO-8 Complementary P & N-Ch DMOS) * NDS9952 ELECTRICAL MODEL * ------------------------ .SUBCKT NDS9952P 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS PMOS (VTO={-1.7*{-0.00216*TEMP+1.054}} KP={-0.006*TEMP+4.65} + THETA=0.086 VMAX=5E5 TOX=4.25E-8 LEVEL=3) Cgs 1 3 200p Rd 20 4 60m TC=0.00344 Dds 4 3 DDS .MODEL DDS D(BV={25*{0.00064*TEMP+0.984}} M=0.3 CJO=300p VJ=0.9) Dbody 20 3 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=40m TT=29n) Ra 4 2 60m TC=0.00344 Rs 3 5 1m Ls 5 30 0.9n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER PMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1100p Rcgd 7 4 10meg Dgd 4 6 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.5 CJO=600p VJ=0.12) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDS9952P * * * NDS9952N ELECTRICAL MODEL * ------------------------ .SUBCKT NDS9952N 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.5*{-0.00248*TEMP+1.062}} KP={-0.014*TEMP+7.55} + THETA=0.086 VMAX=5E5 LEVEL=3) Cgs 1 3 359p Rd 20 4 10m TC=0.0036 Dds 3 4 DDS .MODEL DDS D(BV={20*{0.0008*TEMP+0.98}} M=0.35 CJO=290p VJ=0.9) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=40m TT=70n) Ra 4 2 21m TC=0.0036 Rs 3 5 1m Ls 5 30 0.9n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1050p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.325 CJO=1050p VJ=0.039) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDS9952N * * * NDS9952 THERMAL MODEL * --------------------- .SUBCKT 9952THM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*125*V(90,40)}; Tja=Pave(t)*RJA*rja(t) R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDS9952 Single Pulsed rja(t) + (0.0001, 0.002232) + (0.0002, 0.003156) + (0.0005, 0.00499) + (0.001, 0.007057) + (0.002, 0.00998) + (0.005, 0.01578) + (0.01, 0.022316) + (0.02, 0.03156) + (0.05, 0.049901) + (0.1, 0.070571) + (0.2, 0.099802) + (0.5, 0.157801) + (1, 0.223165) + (2, 0.304706) + (5, 0.430226) + (10, 0.532168) + (20, 0.641667) + (50, 0.789139) + (100, 0.876999) + (200, 0.940897) + (500, 1) + (999, 1) .ENDS 9952THM * *======================================================================= *( SO-8 Complementary P & N-Ch DMOS) * NDS9952A ELECTRICAL MODEL * ------------------------ .SUBCKT NDS9952AP 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS PMOS (VTO={-1.8*{-0.00216*TEMP+1.054}} KP={-0.006*TEMP+4.65} + THETA=0.086 VMAX=5E5 TOX=4.25E-8 LEVEL=3) Cgs 1 3 400p Rd 20 4 30m TC=0.0036 Dds 4 3 DDS .MODEL DDS D(BV={30*{0.00064*TEMP+0.984}} M=0.3 CJO=300p VJ=0.9) Dbody 20 3 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=40m TT=29n) Ra 4 2 30m TC=0.0036 Rs 3 5 1m Ls 5 30 0.9n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER PMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 600p Rcgd 7 4 20meg Dgd 4 6 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.5 CJO=600p VJ=0.12) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDS9952AP * * .SUBCKT NDS9952AN 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.8*{-0.00248*TEMP+1.062}} KP={-0.014*TEMP+7.55} + THETA=0.086 VMAX=5E5 LEVEL=3) Cgs 1 3 350p Rd 20 4 10m TC=0.0036 Dds 3 4 DDS .MODEL DDS D(BV={30*{0.0008*TEMP+0.98}} M=0.35 CJO=290p VJ=0.9) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=40m TT=70n) Ra 4 2 10m TC=0.0036 Rs 3 5 1m Ls 5 30 0.9n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 500p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.325 CJO=500p VJ=0.039) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDS9952AN * * * NDS9952A THERMAL MODEL * --------------------- .SUBCKT 9952ATHM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*125*V(90,40)}; Tja=Pave(t)*RJA*rja(t) R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDS9952A Single Pulsed rja(t) + (0.0001, 0.002232) + (0.0002, 0.003156) + (0.0005, 0.00499) + (0.001, 0.007057) + (0.002, 0.00998) + (0.005, 0.01578) + (0.01, 0.022316) + (0.02, 0.03156) + (0.05, 0.049901) + (0.1, 0.070571) + (0.2, 0.099802) + (0.5, 0.157801) + (1, 0.223165) + (2, 0.304706) + (5, 0.430226) + (10, 0.532168) + (20, 0.641667) + (50, 0.789139) + (100, 0.876999) + (200, 0.940897) + (500, 1) + (999, 1) .ENDS 9952ATHM * *======================================================================= * * NDS9953 ELECTRICAL MODEL (SO-8 Dual P-Ch DMOS) * ------------------------ .SUBCKT NDS9953 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS PMOS (VTO={-1.7*{-0.00216*TEMP+1.054}} KP={-0.006*TEMP+4.65} + THETA=0.086 VMAX=5E5 TOX=4.25E-8 LEVEL=3) Cgs 1 3 200p Rd 20 4 60m TC=0.0036 Dds 4 3 DDS .MODEL DDS D(BV={20*{0.00064*TEMP+0.984}} M=0.25 CJO=310p VJ=0.51) Dbody 20 3 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=90m TT=29n) Ra 4 2 59m TC=0.0036 Rs 3 5 2m Ls 5 30 0.9n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER PMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1100p Rcgd 7 4 10meg Dgd 4 6 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.31 CJO=600p VJ=0.18) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDS9953 * * * NDS9953 THERMAL MODEL * --------------------- .SUBCKT 9953THM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*125*V(90,40)}; Tja=Pave(t)*RJA*rja(t) R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDS9953 Single Pulsed rja(t) + (0.0001, 0.002232) + (0.0002, 0.003156) + (0.0005, 0.00499) + (0.001, 0.007057) + (0.002, 0.00998) + (0.005, 0.01578) + (0.01, 0.022316) + (0.02, 0.03156) + (0.05, 0.049901) + (0.1, 0.070571) + (0.2, 0.099802) + (0.5, 0.157801) + (1, 0.223165) + (2, 0.304706) + (5, 0.430226) + (10, 0.532168) + (20, 0.641667) + (50, 0.789139) + (100, 0.876999) + (200, 0.940897) + (500, 1) + (999, 1) .ENDS 9953THM * *======================================================================= * * NDS9953A ELECTRICAL MODEL (SO-8 Dual P Ch DMOS) * ------------------------ .SUBCKT NDS9953A 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS PMOS (VTO={-1.8*{-0.00216*TEMP+1.054}} KP={-0.006*TEMP+4.65} + THETA=0.086 VMAX=5E5 TOX=4.25E-8 LEVEL=3) Cgs 1 3 400p Rd 20 4 30m TC=0.0036 Dds 4 3 DDS .MODEL DDS D(BV={30*{0.00064*TEMP+0.984}} M=0.3 CJO=300p VJ=0.9) Dbody 20 3 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=40m TT=29n) Ra 4 2 30m TC=0.0036 Rs 3 5 1m Ls 5 30 0.9n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER PMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 600p Rcgd 7 4 20meg Dgd 4 6 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.5 CJO=600p VJ=0.12) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDS9953A * * * NDS9953A THERMAL MODEL * --------------------- .SUBCKT 9953ATHM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*125*V(90,40)}; Tja=Pave(t)*RJA*rja(t) R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDS9953A Single Pulsed rja(t) + (0.0001, 0.002232) + (0.0002, 0.003156) + (0.0005, 0.00499) + (0.001, 0.007057) + (0.002, 0.00998) + (0.005, 0.01578) + (0.01, 0.022316) + (0.02, 0.03156) + (0.05, 0.049901) + (0.1, 0.070571) + (0.2, 0.099802) + (0.5, 0.157801) + (1, 0.223165) + (2, 0.304706) + (5, 0.430226) + (10, 0.532168) + (20, 0.641667) + (50, 0.789139) + (100, 0.876999) + (200, 0.940897) + (500, 1) + (999, 1) .ENDS 9953ATHM * *======================================================================= * * NDS9955 ELECTRICAL MODEL ( SO-8 Dual N-Ch DMOS) * ------------------------ .SUBCKT NDS9955 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.5*{-0.00272*TEMP+1.068}} KP={-0.015*TEMP+7.375} + THETA=0.086 VMAX=3E5 LEVEL=3) Cgs 1 3 405p Rd 20 4 24m TC=0.00496 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.0008*TEMP+0.98}} M=0.3 CJO=252p VJ=0.8) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=43m TT=52n) Ra 4 2 28m TC=0.00496 Rs 3 5 1m Ls 5 30 0.9n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 700p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.53 CJO=700p VJ=0.12) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDS9955 * * * NDS9955 THERMAL MODEL * --------------------- .SUBCKT 9955THM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*125*V(90,40)}; Tja=Pave(t)*RJA*rja(t) R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDS9955 Single Pulsed rja(t) + (0.0001, 0.002232) + (0.0002, 0.003156) + (0.0005, 0.00499) + (0.001, 0.007057) + (0.002, 0.00998) + (0.005, 0.01578) + (0.01, 0.022316) + (0.02, 0.03156) + (0.05, 0.049901) + (0.1, 0.070571) + (0.2, 0.099802) + (0.5, 0.157801) + (1, 0.223165) + (2, 0.304706) + (5, 0.430226) + (10, 0.532168) + (20, 0.641667) + (50, 0.789139) + (100, 0.876999) + (200, 0.940897) + (500, 1) + (999, 1) .ENDS 9955THM * *======================================================================= * * NDS9956 ELECTRICAL MODEL (SO-8 Dual N-Ch DMOS) * ------------------------ .SUBCKT NDS9956 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.5*{-0.00248*TEMP+1.062}} KP={-0.014*TEMP+7.55} + THETA=0.086 VMAX=5E5 LEVEL=3) Cgs 1 3 359p Rd 20 4 10m TC=0.0036 Dds 3 4 DDS .MODEL DDS D(BV={20*{0.0008*TEMP+0.98}} M=0.35 CJO=290p VJ=0.9) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=40m TT=70n) Ra 4 2 21m TC=0.0036 Rs 3 5 1m Ls 5 30 0.9n M2 1 8 6 6 INTER E2 8 6 4 1 2.MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1050p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.325 CJO=1050p VJ=0.039) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDS9956 * * * NDS9956 THERMAL MODEL * --------------------- .SUBCKT 9956THM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*125*V(90,40)}; Tja=Pave(t)*RJA*rja(t) R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDS9956 Single Pulsed rja(t) + (0.0001, 0.002232) + (0.0002, 0.003156) + (0.0005, 0.00499) + (0.001, 0.007057) + (0.002, 0.00998) + (0.005, 0.01578) + (0.01, 0.022316) + (0.02, 0.03156) + (0.05, 0.049901) + (0.1, 0.070571) + (0.2, 0.099802) + (0.5, 0.157801) + (1, 0.223165) + (2, 0.304706) + (5, 0.430226) + (10, 0.532168) + (20, 0.641667) + (50, 0.789139) + (100, 0.876999) + (200, 0.940897) + (500, 1) + (999, 1) .ENDS 9956THM * *======================================================================= * * NDS9956A ELECTRICAL MODEL (SO-8 Dual N-Ch DMOS) * ------------------------ .SUBCKT NDS9956A 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.8*{-0.00248*TEMP+1.062}} KP={-0.014*TEMP+7.55} + THETA=0.086 VMAX=5E5 LEVEL=3) Cgs 1 3 350p Rd 20 4 10m TC=0.0036 Dds 3 4 DDS .MODEL DDS D(BV={30*{0.0008*TEMP+0.98}} M=0.35 CJO=290p VJ=0.9) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=40m TT=70n) Ra 4 2 10m TC=0.0036 Rs 3 5 1m Ls 5 30 0.9n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 500p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.325 CJO=500p VJ=0.039) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDS9956A * * * NDS9956A THERMAL MODEL * --------------------- .SUBCKT 9956ATHM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*125*V(90,40)}; Tja=Pave(t)*RJA*rja(t) R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDS9956A Single Pulsed rja(t) + (0.0001, 0.002232) + (0.0002, 0.003156) + (0.0005, 0.00499) + (0.001, 0.007057) + (0.002, 0.00998) + (0.005, 0.01578) + (0.01, 0.022316) + (0.02, 0.03156) + (0.05, 0.049901) + (0.1, 0.070571) + (0.2, 0.099802) + (0.5, 0.157801) + (1, 0.223165) + (2, 0.304706) + (5, 0.430226) + (10, 0.532168) + (20, 0.641667) + (50, 0.789139) + (100, 0.876999) + (200, 0.940897) + (500, 1) + (999, 1) .ENDS 9956ATHM * * NDS9957 ELECTRICAL MODEL (SO-8 Dual N-Ch DMOS) * ------------------------ .SUBCKT NDS9957 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.95*{-0.0024*TEMP+1.06}} KP={-0.01*TEMP+4.5} + THETA=0.086 VMAX=5E5 LEVEL=3) Cgs 1 3 350p Rd 20 4 25m TC=0.00704 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00084*TEMP+0.979}} M=0.35 CJO=200p VJ=0.9) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=40m TT=70n) Ra 4 2 35m TC=0.00704 Rs 3 5 1m Ls 5 30 0.9n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 320p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.325 CJO=200p VJ=0.039) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDS9957 * * * NDS9957 Single Pulse THERMAL MODEL * ---------------------------------- .SUBCKT 9957THM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*125*V(90,40)}; Tja=Pave(t)*RJA*rja(t) R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDS9957 Single Pulsed Rja + (0.0001, 0.002232) + (0.0002, 0.003156) + (0.0005, 0.00499) + (0.001, 0.007057) + (0.002, 0.00998) + (0.005, 0.01578) + (0.01, 0.022316) + (0.02, 0.03156) + (0.05, 0.049901) + (0.1, 0.070571) + (0.2, 0.099802) + (0.5, 0.157801) + (1, 0.223165) + (2, 0.304706) + (5, 0.430226) + (10, 0.532168) + (20, 0.641667) + (50, 0.789139) + (100, 0.876999) + (200, 0.940897) + (500, 1) + (999, 1) .ENDS 9957THM * *======================================================================= *( SO-8 Complementary P & N-Ch DMOS) * NDS9958 ELECTRICAL MODEL * ------------------------ .SUBCKT NDS9958N 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.5*{-0.00272*TEMP+1.068}} KP={-0.02*TEMP+9} + THETA=0.086 VMAX=5E5 LEVEL=3) Cgs 1 3 359p Rd 20 4 10m TC=0.00416 Dds 3 4 DDS .MODEL DDS D(BV={20*{0.0008*TEMP+0.98}} M=0.35 CJO=290p VJ=0.9) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=40m TT=70n) Ra 4 2 21m TC=0.00416 Rs 3 5 1m Ls 5 30 0.9n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1050p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.325 CJO=1050p VJ=0.039) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDS9958N * .SUBCKT NDS9958P 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS PMOS (VTO={-2.2*{-0.00136*TEMP+1.034}} KP={-0.01*TEMP+6.55} + THETA=0.086 VMAX=5E5 TOX=4.25E-8 LEVEL=3) Cgs 1 3 200p Rd 20 4 15m TC=0.00336 Dds 4 3 DDS .MODEL DDS D(BV={20*{0.0006*TEMP+0.985}} M=0.25 CJO=300p VJ=0.51) Dbody 20 3 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=90m TT=29n) Ra 4 2 10m TC=0.00336 Rs 3 5 2m Ls 5 30 0.9n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER PMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1230p Rcgd 7 4 10meg Dgd 4 6 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.31 CJO=1230p VJ=0.18) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDS9958P * * * NDS9958 THERMAL MODEL * --------------------- .SUBCKT 9958THM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*125*V(90,40)}; Tja=Pave(t)*RJA*rja(t) R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDS9958 Single Pulsed rja(t) + (0.0001, 0.002232) + (0.0002, 0.003156) + (0.0005, 0.00499) + (0.001, 0.007057) + (0.002, 0.00998) + (0.005, 0.01578) + (0.01, 0.022316) + (0.02, 0.03156) + (0.05, 0.049901) + (0.1, 0.070571) + (0.2, 0.099802) + (0.5, 0.157801) + (1, 0.223165) + (2, 0.304706) + (5, 0.430226) + (10, 0.532168) + (20, 0.641667) + (50, 0.789139) + (100, 0.876999) + (200, 0.940897) + (500, 1) + (999, 1) .ENDS 9958THM * *======================================================================= * * NDS9959 ELECTRICAL MODEL (SO-8 Dual N-Ch DMOS) * ------------------------ .SUBCKT NDS9959 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={3.7*{-0.00208*TEMP+1.052}} KP={-0.003*TEMP+2.015} + THETA=0.056 VMAX=5E5 LEVEL=3) Cgs 1 3 175p Rd 20 4 95m TC=0.00648 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.0006*TEMP+0.985}} M=0.35 CJO=290p VJ=0.9) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=40m TT=70n) Ra 4 2 90m TC=0.00648 Rs 3 5 1m Ls 5 30 0.9n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 200p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.325 CJO=200p VJ=0.039) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDS9959 * * * NDS9959 THERMAL MODEL * --------------------- .SUBCKT 9959THM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*125*V(90,40)}; Tja=Pave(t)*RJA*rja(t) 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDS9956A Single Pulsed rja(t) + (0.0001, 0.002232) + (0.0002, 0.003156) + (0.0005, 0.00499) + (0.001, 0.007057) + (0.002, 0.00998) + (0.005, 0.01578) + (0.01, 0.022316) + (0.02, 0.03156) + (0.05, 0.049901) + (0.1, 0.070571) + (0.2, 0.099802) + (0.5, 0.157801) + (1, 0.223165) + (2, 0.304706) + (5, 0.430226) + (10, 0.532168) + (20, 0.641667) + (50, 0.789139) + (100, 0.876999) + (200, 0.940897) + (500, 1) + (999, 1) .ENDS 9959THM * *======================================================================= * *NDT014 ELECTRICAL MODEL (PowerSOT SOT-223 N-Ch DMOS) * ---------------------- .SUBCKT NDT014 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.1*{-0.00184*TEMP+1.046}} KP={-0.007*TEMP+3.175} + THETA=0.056 VMAX=1.9E5 LEVEL=3) Cgs 1 3 150p Rd 20 4 20m TC=0.00648 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00072*TEMP+0.982}} M=0.34 CJO=312p VJ=0.8) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=116m TT=52n) Ra 4 2 45m TC=0.00648 Rs 3 5 10m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 200p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=200p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDT014 * * * NDT014 THERMAL MODEL * --------------------- .SUBCKT 014THM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*110*V(90,40)}; Tja=Pave(t)*RJA*rja(t) R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDT014 Single Pulsed rja(t) + (0.0001, 0.002232) + (0.0002, 0.003156) + (0.0005, 0.00499) + (0.001, 0.007057) + (0.002, 0.00998) + (0.005, 0.01578) + (0.01, 0.022316) + (0.02, 0.03156) + (0.05, 0.049901) + (0.1, 0.070571) + (0.2, 0.099802) + (0.5, 0.157801) + (1, 0.223165) + (2, 0.304706) + (5, 0.430226) + (10, 0.532168) + (20, 0.641667) + (50, 0.789139) + (100, 0.876999) + (200, 0.940897) + (500, 1) + (999, 1) .ENDS 014THM * *====================================================================== * *NDT014L ELECTRICAL MODEL (PowerSOT SOT-223 N-Ch DMOS) * ---------------------- .SUBCKT NDT014L 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={1.5*{-0.0022*TEMP+1.055}} KP={-0.01*TEMP+5.45} + THETA=0.086 VMAX=2.2E5 LEVEL=3) Cgs 1 3 200p Rd 20 4 20m TC=0.0054 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00072*TEMP+0.982}} M=0.34 CJO=312p VJ=0.8) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=116m TT=52n) Ra 4 2 50m TC=0.0054 Rs 3 5 10m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 500p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=500p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDT014L * * * NDT014L THERMAL MODEL * --------------------- .SUBCKT 014LTHM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*110*V(90,40)}; Tja=Pave(t)*RJA*rja(t) R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDT014L Single Pulsed rja(t) + (0.0001, 0.002232) + (0.0002, 0.003156) + (0.0005, 0.00499) + (0.001, 0.007057) + (0.002, 0.00998) + (0.005, 0.01578) + (0.01, 0.022316) + (0.02, 0.03156) + (0.05, 0.049901) + (0.1, 0.070571) + (0.2, 0.099802) + (0.5, 0.157801) + (1, 0.223165) + (2, 0.304706) + (5, 0.430226) + (10, 0.532168) + (20, 0.641667) + (50, 0.789139) + (100, 0.876999) + (200, 0.940897) + (500, 1) + (999, 1) .ENDS 014LTHM * *================================================================= * *NDT410EL ELECTRICAL MODEL (PowerSOT SOT-223 N-Ch DMOS) * ------------------------- .SUBCKT NDT410EL 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={1.5*{-0.00336*TEMP+1.084}} KP={-0.01*TEMP+5.45} + THETA=0.086 VMAX=2.2E5 LEVEL=3) Cgs 1 3 500p Rd 20 4 80m TC=0.0092 Dds 3 4 DDS .MODEL DDS D(BV={100*{0.0008*TEMP+0.98}} M=0.36 CJO=303p VJ=1.18) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=119m TT=53n) Ra 4 2 80m TC=0.0092 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1300p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.51 CJO=500p VJ=0.047) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDT410EL * * * NDT410EL THERMAL MODEL * --------------------- .SUBCKT 410ELTHM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*110*V(90,40)}; Tja=Pave(t)*RJA*rja(t) R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDT410EL Single Pulsed rja(t) + (0.0001, 0.002232) + (0.0002, 0.003156) + (0.0005, 0.00499) + (0.001, 0.007057) + (0.002, 0.00998) + (0.005, 0.01578) + (0.01, 0.022316) + (0.02, 0.03156) + (0.05, 0.049901) + (0.1, 0.070571) + (0.2, 0.099802) + (0.5, 0.157801) + (1, 0.223165) + (2, 0.304706) + (5, 0.430226) + (10, 0.532168) + (20, 0.641667) + (50, 0.789139) + (100, 0.876999) + (200, 0.940897) + (500, 1) + (999, 1) .ENDS 410ELTHM * *======================================================================= * * NDT451N ELECTRICAL MODEL (PowerSOT SOT-223 N-Ch DMOS) * ------------------------ .SUBCKT NDT451N 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.5*{-0.0028*TEMP+1.07}} KP={-0.02*TEMP+13} + THETA=0.086 VMAX=5E5 LEVEL=3) Cgs 1 3 359p Rd 20 4 10m TC=0.00416 Dds 3 4 DDS .MODEL DDS D(BV={30*{0.0008*TEMP+0.98}} M=0.35 CJO=290p VJ=0.9) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=40m TT=70n) Ra 4 2 21m TC=0.00416 Rs 3 5 1m Ls 5 30 0.9n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1050p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.325 CJO=1050p VJ=0.039) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDT451N * * * NDT451N THERMAL MODEL * --------------------- .SUBCKT 451NTHM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*110*V(90,40)}; Tja=Pave(t)*RJA*rja(t) R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDT451N Single Pulsed rja(t) + (0.0001, 0.002232) + (0.0002, 0.003156) + (0.0005, 0.00499) + (0.001, 0.007057) + (0.002, 0.00998) + (0.005, 0.01578) + (0.01, 0.022316) + (0.02, 0.03156) + (0.05, 0.049901) + (0.1, 0.070571) + (0.2, 0.099802) + (0.5, 0.157801) + (1, 0.223165) + (2, 0.304706) + (5, 0.430226) + (10, 0.532168) + (20, 0.641667) + (50, 0.789139) + (100, 0.876999) + (200, 0.940897) + (500, 1) + (999, 1) .ENDS 451NTHM * *======================================================================= * *NDT451AN ELECTRICAL MODEL (PowerSOT SOT-223 N-Ch DMOS) * ----------------------- .SUBCKT NDT451AN 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.6*{-0.0028*TEMP+1.07}} KP={-0.02*TEMP+13} + THETA=0.086 VMAX=5E5 LEVEL=3) Cgs 1 3 400p Rd 20 4 2m TC=0.00416 Dds 3 4 DDS .MODEL DDS D(BV={30*{0.0008*TEMP+0.98}} M=0.35 CJO=290p VJ=0.9) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=40m TT=70n) Ra 4 2 2m TC=0.00416 Rs 3 5 6m Ls 5 30 0.9n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1250p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.325 CJO=1250p VJ=0.039) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDT451AN * * * NDT451AN THERMAL MODEL * ---------------------- .SUBCKT 451ANTHM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*110*V(90,40)}; Tja=Pave(t)*RJA*rja(t) R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDT451AN Single Pulsed rja(t) + (0.0001, 0.002232) + (0.0002, 0.003156) + (0.0005, 0.00499) + (0.001, 0.007057) + (0.002, 0.00998) + (0.005, 0.01578) + (0.01, 0.022316) + (0.02, 0.03156) + (0.05, 0.049901) + (0.1, 0.070571) + (0.2, 0.099802) + (0.5, 0.157801) + (1, 0.223165) + (2, 0.304706) + (5, 0.430226) + (10, 0.532168) + (20, 0.641667) + (50, 0.789139) + (100, 0.876999) + (200, 0.940897) + (500, 1) + (999, 1) .ENDS 451ANTHM * *====================================================================== * * NDT452P ELECTRICAL MODEL (PowerSOT SOT-223 P-Ch DMOS) * ----------------------------------------------- .SUBCKT NDT452P 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS PMOS (VTO={-1.7*{-0.00248*TEMP+1.062}} KP={-0.013*TEMP+8.825} + THETA=0.086 VMAX=5E5 TOX=4.25E-8 LEVEL=3) Cgs 1 3 200p Rd 20 4 55m TC=0.00344 Dds 4 3 DDS .MODEL DDS D(BV={30*{0.00064*TEMP+0.984}} M=0.25 CJO=310p VJ=0.51) Dbody 20 3 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=90m TT=29n) Ra 4 2 55m TC=0.00344 Rs 3 5 2m Ls 5 30 0.9n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER PMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1100p Rcgd 7 4 10meg Dgd 4 6 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.31 CJO=600p VJ=0.18) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDT452P * * * NDT452P THERMAL MODEL * ------------------------------------------ .SUBCKT 452PTHM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*110*V(90,40)}; Tja=Pave(t)*RJA*rja(t) R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDT452P Single Pulsed rja(t) + (0.0001, 0.002232) + (0.0002, 0.003156) + (0.0005, 0.00499) + (0.001, 0.007057) + (0.002, 0.00998) + (0.005, 0.01578) + (0.01, 0.022316) + (0.02, 0.03156) + (0.05, 0.049901) + (0.1, 0.070571) + (0.2, 0.099802) + (0.5, 0.157801) + (1, 0.223165) + (2, 0.304706) + (5, 0.430226) + (10, 0.532168) + (20, 0.641667) + (50, 0.789139) + (100, 0.876999) + (200, 0.940897) + (500, 1) + (999, 1) .ENDS 452PTHM * *======================================================================= * * NDT453N ELECTRICAL MODEL (PowerSOT SOT-223 N-Ch DMOS) * ------------------------ .SUBCKT NDT453N 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={2.2*{-0.00248*TEMP+1.062}} KP={-0.03*TEMP+15.75} + THETA=0.086 VMAX=2.2E5 LEVEL=3) Cgs 1 3 600p Rd 20 4 2m TC=0.00384 Dds 3 4 DDS .MODEL DDS D(BV={30*{0.00072*TEMP+0.982}} M=0.35 CJO=290p VJ=0.8) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=40m TT=70n) Ra 4 2 2m TC=0.00384 Rs 3 5 5m Ls 5 30 0.9n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1800p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.325 CJO=1800p VJ=0.039) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDT453N * * * NDT453N Single Pulse THERMAL MODEL * ---------------------------------- .SUBCKT 453NTHM 50 40 100 Rop 50 60 1meg Cop 60 70 1u IC=0 E_W 40 70 40 60 1meg E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*125*V(90,40)} R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDT453N Single Pulsed Rja + (0.0001, 0.002232) + (0.0002, 0.003156) + (0.0005, 0.00499) + (0.001, 0.007057) + (0.002, 0.00998) + (0.005, 0.01578) + (0.01, 0.022316) + (0.02, 0.03156) + (0.05, 0.049901) + (0.1, 0.070571) + (0.2, 0.099802) + (0.5, 0.157801) + (1, 0.223165) + (2, 0.304706) + (5, 0.430226) + (10, 0.532168) + (20, 0.641667) + (50, 0.789139) + (100, 0.876999) + (200, 0.940897) + (500, 1) + (999, 1) .ENDS 453NTHM * *======================================================================= * * NDT455N ELECTRICAL MODEL (PowerSOT SOT-223 N-Ch DMOS) * ------------------------ .SUBCKT NDT455N 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.8*{-0.00384*TEMP+1.096}} KP={-0.05*TEMP+40.75} + THETA=0.086 VMAX=2.2E5 LEVEL=3) Cgs 1 3 800p Rd 20 4 2m TC=0.00376 Dds 3 4 DDS .MODEL DDS D(BV={30*{0.00064*TEMP+0.984}} M=0.35 CJO=550p VJ=0.8) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=40m TT=70n) Ra 4 2 3m TC=0.00376 Rs 3 5 5m Ls 5 30 0.9n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 3200p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.325 CJO=2800p VJ=0.039) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDT455N * * * NDT455N Single Pulse THERMAL MODEL * ---------------------------------- .SUBCKT 455NTHM 50 40 100 Rop 50 60 1meg Cop 60 70 1u IC=0 E_W 40 70 40 60 1meg E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*125*V(90,40)} R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDT455N Single Pulsed Rja + (0.0001, 0.002232) + (0.0002, 0.003156) + (0.0005, 0.00499) + (0.001, 0.007057) + (0.002, 0.00998) + (0.005, 0.01578) + (0.01, 0.022316) + (0.02, 0.03156) + (0.05, 0.049901) + (0.1, 0.070571) + (0.2, 0.099802) + (0.5, 0.157801) + (1, 0.223165) + (2, 0.304706) + (5, 0.430226) + (10, 0.532168) + (20, 0.641667) + (50, 0.789139) + (100, 0.876999) + (200, 0.940897) + (500, 1) + (999, 1) .ENDS 455NTHM * =================================================================== * NDT454P ELECTRICAL MODEL (PowerSOT SOT-223 P-Ch DMOS) * ----------------------------------------------- .SUBCKT NDT454P 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS PMOS (VTO={-1.95*{-0.0026*TEMP+1.065}} KP={-0.02*TEMP+14.5} + THETA=0.086 VMAX=5E5 TOX=4.25E-8 LEVEL=3) Cgs 1 3 300p Rd 20 4 15m TC=0.00424 Dds 4 3 DDS .MODEL DDS D(BV={30*{0.00064*TEMP+0.984}} M=0.25 CJO=310p VJ=0.51) Dbody 20 3 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=90m TT=29n) Ra 4 2 10m TC=0.00424 Rs 3 5 2m Ls 5 30 0.9n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER PMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1700p Rcgd 7 4 10meg Dgd 4 6 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.31 CJO=1700p VJ=0.18) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDT454P * * * NDT454P THERMAL MODEL * ------------------------------------------ .SUBCKT 454PTHM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*110*V(90,40)}; Tja=Pave(t)*RJA*rja(t) R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDT454P Single Pulsed rja(t) + (0.0001, 0.002232) + (0.0002, 0.003156) + (0.0005, 0.00499) + (0.001, 0.007057) + (0.002, 0.00998) + (0.005, 0.01578) + (0.01, 0.022316) + (0.02, 0.03156) + (0.05, 0.049901) + (0.1, 0.070571) + (0.2, 0.099802) + (0.5, 0.157801) + (1, 0.223165) + (2, 0.304706) + (5, 0.430226) + (10, 0.532168) + (20, 0.641667) + (50, 0.789139) + (100, 0.876999) + (200, 0.940897) + (500, 1) + (999, 1) .ENDS 454PTHM * * NDT456P ELECTRICAL MODEL (PowerSOT SOT-223 P-Ch DMOS) * ----------------------------------------------- .SUBCKT NDT456P 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS PMOS (VTO={-2.0*{-0.0024*TEMP+1.06}} KP={-0.02*TEMP+19.5} + THETA=0.086 VMAX=5E5 TOX=4.25E-8 LEVEL=3) Cgs 1 3 1000p Rd 20 4 10m TC=0.00376 Dds 4 3 DDS .MODEL DDS D(BV={30*{0.00064*TEMP+0.984}} M=0.25 CJO=500p VJ=0.51) Dbody 20 3 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=90m TT=29n) Ra 4 2 8m TC=0.00376 Rs 3 5 2m Ls 5 30 0.9n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER PMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 2900p Rcgd 7 4 10meg Dgd 4 6 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.31 CJO=2200p VJ=0.18) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDT456P * * * NDT456P THERMAL MODEL * ------------------------------------------ .SUBCKT 456PTHM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*110*V(90,40)}; Tja=Pave(t)*RJA*rja(t) R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDT456P Single Pulsed rja(t) + (0.0001, 0.002232) + (0.0002, 0.003156) + (0.0005, 0.00499) + (0.001, 0.007057) + (0.002, 0.00998) + (0.005, 0.01578) + (0.01, 0.022316) + (0.02, 0.03156) + (0.05, 0.049901) + (0.1, 0.070571) + (0.2, 0.099802) + (0.5, 0.157801) + (1, 0.223165) + (2, 0.304706) + (5, 0.430226) + (10, 0.532168) + (20, 0.641667) + (50, 0.789139) + (100, 0.876999) + (200, 0.940897) + (500, 1) + (999, 1) .ENDS 456PTHM * *=============================================================== * * NDT2955 ELECTRICAL MODEL (PowerSOT SOT-223 P Ch DMOS) * ------------------------ .SUBCKT NDT2955 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS PMOS (VTO={-2.6*{-0.00156*TEMP+1.039}} KP={-0.007*TEMP+4.475} + THETA=0.086 VMAX=5E5 TOX=4.25E-8 LEVEL=3) Cgs 1 3 480p Rd 20 4 70m TC=0.004 Dds 4 3 DDS .MODEL DDS D(BV={60*{0.00096*TEMP+0.976}} M=0.3 CJO=300p VJ=0.9) Dbody 20 3 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=40m TT=29n) Ra 4 2 80m TC=0.004 Rs 3 5 1m Ls 5 30 0.9n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER PMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 880p Rcgd 7 4 20meg Dgd 4 6 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.5 CJO=880p VJ=0.12) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDT2955 * * * NDT2955 THERMAL MODEL * --------------------- .SUBCKT 2955THM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*110*V(90,40)}; Tja=Pave(t)*RJA*rja(t) R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDT2955 Single Pulsed rja(t) + (0.0001, 0.002232) + (0.0002, 0.003156) + (0.0005, 0.00499) + (0.001, 0.007057) + (0.002, 0.00998) + (0.005, 0.01578) + (0.01, 0.022316) + (0.02, 0.03156) + (0.05, 0.049901) + (0.1, 0.070571) + (0.2, 0.099802) + (0.5, 0.157801) + (1, 0.223165) + (2, 0.304706) + (5, 0.430226) + (10, 0.532168) + (20, 0.641667) + (50, 0.789139) + (100, 0.876999) + (200, 0.940897) + (500, 1) + (999, 1) .ENDS 2955THM * *======================================================================= * *NDT3055 ELECTRICAL MODEL (PowerSOT SOT-223 N-Ch DMOS) * ---------------------- .SUBCKT NDT3055 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={3.1*{-0.00184*TEMP+1.046}} KP={-0.011*TEMP+6.075} + THETA=0.056 VMAX=1.9E5 LEVEL=3) Cgs 1 3 310p Rd 20 4 7m TC=0.00656 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.00072*TEMP+0.982}} M=0.34 CJO=312p VJ=1.2) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=116m TT=52n) Ra 4 2 31m TC=0.00656 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 500p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=500p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDT3055 * * * NDT3055 THERMAL MODEL * --------------------- .SUBCKT 3055THM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*110*V(90,40)}; Tja=Pave(t)*RJA*rja(t) R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDT3055 Single Pulsed rja(t) + (0.0001, 0.002232) + (0.0002, 0.003156) + (0.0005, 0.00499) + (0.001, 0.007057) + (0.002, 0.00998) + (0.005, 0.01578) + (0.01, 0.022316) + (0.02, 0.03156) + (0.05, 0.049901) + (0.1, 0.070571) + (0.2, 0.099802) + (0.5, 0.157801) + (1, 0.223165) + (2, 0.304706) + (5, 0.430226) + (10, 0.532168) + (20, 0.641667) + (50, 0.789139) + (100, 0.876999) + (200, 0.940897) + (500, 1) + (999, 1) .ENDS 3055THM * *======================================================================= * *NDT3055L ELECTRICAL MODEL (PowerSOT SOT-223 N-Ch DMOS) * ---------------------- .SUBCKT NDT3055L 20 10 30 Rg 10 1 3 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS(VTO={1.8*{-0.00256*TEMP+1.064}} KP={-0.01*TEMP+8.175} + THETA=0.056 VMAX=1.9E5 LEVEL=3) Cgs 1 3 410p Rd 20 4 30m TC=0.00496 Dds 3 4 DDS .MODEL DDS D(BV={60*{0.0008*TEMP+0.98}} M=0.34 CJO=412p VJ=1.2) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=116m TT=52n) Ra 4 2 38m TC=0.00496 Rs 3 5 2m Ls 5 30 5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 800p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.54 CJO=450p VJ=0.214) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDT3055L * * * NDT3055L THERMAL MODEL * --------------------- .SUBCKT 3055LTHM 50 40 100 Rop 50 60 1meg ; From input power, use ideal Cop 60 70 1u IC=0 ; opamp to get energy W(t), E_W 40 70 40 60 1meg ; assume Rin=infinite & Ro=0 E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} ; Get average power by W(t)/t R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*110*V(90,40)}; Tja=Pave(t)*RJA*rja(t) R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDT3055L Single Pulsed rja(t) + (0.0001, 0.002232) + (0.0002, 0.003156) + (0.0005, 0.00499) + (0.001, 0.007057) + (0.002, 0.00998) + (0.005, 0.01578) + (0.01, 0.022316) + (0.02, 0.03156) + (0.05, 0.049901) + (0.1, 0.070571) + (0.2, 0.099802) + (0.5, 0.157801)+ (1, 0.223165) + (2, 0.304706) + (5, 0.430226) + (10, 0.532168) + (20, 0.641667) + (50, 0.789139) + (100, 0.876999) + (200, 0.940897) + (500, 1) + (999, 1) .ENDS 3055LTHM * * NDC631N ELECTRICAL MODEL (SuperSOT-6 N-Ch DMOS) (Preliminary) * ------------------------ .SUBCKT NDC631N 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={0.75*{-0.00352*TEMP+1.088}} KP={-0.03*TEMP+16.75} + THETA=0.086 VMAX=4E5 LEVEL=3) Cgs 1 3 800p Rd 20 4 8m TC=0.0056 Dds 3 4 DDS .MODEL DDS D(BV={20*{0.00088*TEMP+0.978}} M=0.3 CJO=800p VJ=0.8) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=40m TT=100n) Ra 4 2 22m TC=0.0056 Rs 3 5 1m Ls 5 30 0.5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1000p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.5 CJO=900p VJ=0.15) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDC631N * * NDC631N THERMAL MODEL * --------------------- .SUBCKT 631NTHM 50 40 100 Rop 50 60 1meg Cop 60 70 1u IC=0 E_W 40 70 40 60 1meg E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*156*V(90,40)} R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDC631N Single Pulsed rja(t) +(0.00001,0.005) +(0.000034,0.006259) +(0.000105,0.008063) +(0.000276,0.01045) +(0.00096,0.016) +(0.009857,0.040616) +(0.04,0.078542) +(0.1,0.126876) +(0.22,0.199376) +(0.24,0.208468) +(0.26,0.217501) +(0.28,0.226593) +(0.3,0.238677) +(0.32,0.247709) +(0.34,0.253751) +(0.36,0.262844) +(0.38,0.271876) +(0.4,0.277918) +(0.42,0.28701) +(0.44,0.296043) +(0.46,0.299094) +(0.48,0.308186) +(0.5,0.317219) +(0.52,0.320269) +(0.54,0.329302) +(0.56,0.335344) +(0.58,0.344436) +(0.6,0.347427) +(0.62,0.353469) +(0.64,0.359511) +(0.66,0.368603) +(0.68,0.371594) +(0.7,0.377636) +(0.72,0.383677) +(0.74,0.386728) +(0.76,0.39277) +(0.78,0.398811) +(0.8,0.401802) +(0.82,0.407844) +(0.84,0.413886) +(0.86,0.419927) +(0.88,0.422978) +(0.9,0.42902) +(0.92,0.432011) +(0.94,0.438053) +(0.96,0.441103) +(0.98,0.447145) +(1,0.453187) +(2,0.604229) +(3,0.67978) +(4,0.728114) +(5,0.75228) +(6,0.773396) +(7,0.78548) +(8,0.794572) +(9,0.800614) +(9.98874,0.814996) +(21.243,0.86915) +(48.8124,0.926904) +(100,0.963746) +(200,0.990937) +(300,1) .ENDS 631NTHM * * *================================================================== * NDC632P ELECTRICAL MODEL (SuperSOT-6 P-Ch DMOS) (Preliminary) * ------------------------ .SUBCKT NDC632P 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS PMOS (VTO={-0.9*{-0.00304*TEMP+1.076}} KP={-0.019*TEMP+7.675} + THETA=0.086 VMAX=4E5 LEVEL=3) Cgs 1 3 800p Rd 20 4 15m TC=0.004 Dds 4 3 DDS .MODEL DDS D(BV={20*{0.00064*TEMP+0.984}} M=0.3 CJO=800p VJ=0.8) Dbody 20 3 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=40m TT=100n) Ra 4 2 50m TC=0.004 Rs 3 5 1m Ls 5 30 0.5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER PMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 900p Rcgd 7 4 10meg Dgd 4 6 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.5 CJO=900p VJ=0.12) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDC632P * * NDC632P THERMAL MODEL * --------------------- .SUBCKT 632PTHM 50 40 100 Rop 50 60 1meg Cop 60 70 1u IC=0 E_W 40 70 40 60 1meg E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*156*V(90,40)} R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDC632P Single Pulsed rja(t) +(0.00001,0.005) +(0.000034,0.006259) +(0.000105,0.008063) +(0.000276,0.01045) +(0.00096,0.016) +(0.009857,0.040616) +(0.04,0.078542) +(0.1,0.126876) +(0.22,0.199376) +(0.24,0.208468) +(0.26,0.217501) +(0.28,0.226593) +(0.3,0.238677) +(0.32,0.247709) +(0.34,0.253751) +(0.36,0.262844) +(0.38,0.271876) +(0.4,0.277918) +(0.42,0.28701) +(0.44,0.296043) +(0.46,0.299094) +(0.48,0.308186) +(0.5,0.317219) +(0.52,0.320269) +(0.54,0.329302) +(0.56,0.335344) +(0.58,0.344436) +(0.6,0.347427) +(0.62,0.353469) +(0.64,0.359511) +(0.66,0.368603) +(0.68,0.371594) +(0.7,0.377636) +(0.72,0.383677) +(0.74,0.386728) +(0.76,0.39277) +(0.78,0.398811) +(0.8,0.401802) +(0.82,0.407844) +(0.84,0.413886) +(0.86,0.419927) +(0.88,0.422978) +(0.9,0.42902) +(0.92,0.432011) +(0.94,0.438053) +(0.96,0.441103) +(0.98,0.447145) +(1,0.453187) +(2,0.604229) +(3,0.67978) +(4,0.728114) +(5,0.75228) +(6,0.773396) +(7,0.78548) +(8,0.794572) +(9,0.800614) +(9.98874,0.814996) +(21.243,0.86915) +(48.8124,0.926904) +(100,0.963746) +(200,0.990937) +(300,1) .ENDS 632PTHM * * * *================================================================== * NDC651N ELECTRICAL MODEL (SuperSOT-6 N-Ch DMOS) (Preliminary) * ------------------------ .SUBCKT NDC651N 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.8*{-0.00264*TEMP+1.066}} KP={-0.013*TEMP+7.425} + THETA=0.056 VMAX=4E5 LEVEL=3) Cgs 1 3 300p Rd 20 4 4m TC=0.00432 Dds 3 4 DDS .MODEL DDS D(BV={30*{0.00108*TEMP+0.973}} M=0.3 CJO=300p VJ=0.8) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=40m TT=100n) Ra 4 2 10m TC=0.00432 Rs 3 5 1m Ls 5 30 0.5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 550p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.5 CJO=550p VJ=0.15) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDC651N * * NDC651N THERMAL MODEL * --------------------- .SUBCKT 651NTHM 50 40 100 Rop 50 60 1meg Cop 60 70 1u IC=0 E_W 40 70 40 60 1meg E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*156*V(90,40)} R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDC651N Single Pulsed rja(t) +(0.00001,0.005) +(0.000034,0.006259) +(0.000105,0.008063) +(0.000276,0.01045) +(0.00096,0.016) +(0.009857,0.040616) +(0.04,0.078542) +(0.1,0.126876) +(0.22,0.199376) +(0.24,0.208468) +(0.26,0.217501) +(0.28,0.226593) +(0.3,0.238677) +(0.32,0.247709) +(0.34,0.253751) +(0.36,0.262844) +(0.38,0.271876) +(0.4,0.277918) +(0.42,0.28701) +(0.44,0.296043) +(0.46,0.299094) +(0.48,0.308186) +(0.5,0.317219) +(0.52,0.320269) +(0.54,0.329302) +(0.56,0.335344) +(0.58,0.344436) +(0.6,0.347427) +(0.62,0.353469) +(0.64,0.359511) +(0.66,0.368603) +(0.68,0.371594) +(0.7,0.377636) +(0.72,0.383677) +(0.74,0.386728) +(0.76,0.39277) +(0.78,0.398811) +(0.8,0.401802) +(0.82,0.407844) +(0.84,0.413886) +(0.86,0.419927) +(0.88,0.422978) +(0.9,0.42902) +(0.92,0.432011) +(0.94,0.438053) +(0.96,0.441103) +(0.98,0.447145) +(1,0.453187) +(2,0.604229) +(3,0.67978) +(4,0.728114) +(5,0.75228) +(6,0.773396) +(7,0.78548) +(8,0.794572) +(9,0.800614) +(9.98874,0.814996) +(21.243,0.86915) +(48.8124,0.926904) +(100,0.963746) +(200,0.990937) +(300,1) .ENDS 651NTHM * * *================================================================== * NDC652P ELECTRICAL MODEL (SuperSOT-6 P-Ch DMOS) (Preliminary) * ------------------------ .SUBCKT NDC652P 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS PMOS (VTO={-1.85*{-0.00216*TEMP+1.054}} KP={-0.007*TEMP+4.375} + THETA=0.056 VMAX=4E5 LEVEL=3) Cgs 1 3 380p Rd 20 4 10m TC=0.004 Dds 4 3 DDS .MODEL DDS D(BV={30*{0.00064*TEMP+0.984}} M=0.3 CJO=380p VJ=0.8) Dbody 20 3 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=40m TT=100n) Ra 4 2 30m TC=0.004 Rs 3 5 1m Ls 5 30 0.5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER PMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 500p Rcgd 7 4 10meg Dgd 4 6 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.5 CJO=900p VJ=0.12) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDC652P * * NDC652P THERMAL MODEL * --------------------- .SUBCKT 652PTHM 50 40 100 Rop 50 60 1meg Cop 60 70 1u IC=0 E_W 40 70 40 60 1meg E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*156*V(90,40)} R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDC652P Single Pulsed rja(t) +(0.00001,0.005) +(0.000034,0.006259) +(0.000105,0.008063) +(0.000276,0.01045) +(0.00096,0.016) +(0.009857,0.040616) +(0.04,0.078542) +(0.1,0.126876) +(0.22,0.199376) +(0.24,0.208468) +(0.26,0.217501) +(0.28,0.226593) +(0.3,0.238677) +(0.32,0.247709) +(0.34,0.253751) +(0.36,0.262844) +(0.38,0.271876) +(0.4,0.277918) +(0.42,0.28701) +(0.44,0.296043) +(0.46,0.299094) +(0.48,0.308186) +(0.5,0.317219) +(0.52,0.320269) +(0.54,0.329302) +(0.56,0.335344) +(0.58,0.344436) +(0.6,0.347427) +(0.62,0.353469) +(0.64,0.359511) +(0.66,0.368603) +(0.68,0.371594) +(0.7,0.377636) +(0.72,0.383677) +(0.74,0.386728) +(0.76,0.39277) +(0.78,0.398811) +(0.8,0.401802) +(0.82,0.407844) +(0.84,0.413886) +(0.86,0.419927) +(0.88,0.422978) +(0.9,0.42902) +(0.92,0.432011) +(0.94,0.438053) +(0.96,0.441103) +(0.98,0.447145) +(1,0.453187) +(2,0.604229) +(3,0.67978) +(4,0.728114) +(5,0.75228) +(6,0.773396) +(7,0.78548) +(8,0.794572) +(9,0.800614) +(9.98874,0.814996) +(21.243,0.86915) +(48.8124,0.926904) +(100,0.963746) +(200,0.990937) +(300,1) .ENDS 652PTHM * * * *========================================================================= * NDC7001N ELECTRICAL MODEL (SuperSOT-6 N-Ch DMOS) (Preliminary) * ------------------------ .SUBCKT NDC7001N 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={2.1*{-0.00192*TEMP+1.048}} KP={-0.0009*TEMP+0.385} + THETA=0.056 VMAX=4E5 LEVEL=3) Cgs 1 3 40p Rd 20 4 92m TC=0.00704 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00096*TEMP+0.976}} M=0.3 CJO=40p VJ=0.8) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=40m TT=100n) Ra 4 2 130m TC=0.00704 Rs 3 5 1m Ls 5 30 0.5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 45p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.5 CJO=45p VJ=0.15) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDC7001N * *================================================================== * NDC7001P ELECTRICAL MODEL (SuperSOT-6 P-Ch DMOS) (Preliminary) * ------------------------ .SUBCKT NDC7001P 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS PMOS (VTO={-2.7*{-0.0014*TEMP+1.035}} KP={-0.0006*TEMP+0.23} + THETA=0.056 VMAX=4E5 LEVEL=3) Cgs 1 3 40p Rd 20 4 680m TC=0.00544 Dds 4 3 DDS .MODEL DDS D(BV={50*{0.00088*TEMP+0.978}} M=0.3 CJO=40p VJ=0.8) Dbody 20 3 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=40m TT=100n) Ra 4 2 1050m TC=0.00544 Rs 3 5 1m Ls 5 30 0.5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER PMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 75p Rcgd 7 4 10meg Dgd 4 6 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.5 CJO=75p VJ=0.12) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDC7001P * * NDC7001C THERMAL MODEL * --------------------- .SUBCKT 7001CTHM 50 40 100 Rop 50 60 1meg Cop 60 70 1u IC=0 E_W 40 70 40 60 1meg E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*156*V(90,40)} R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDC632P Single Pulsed rja(t) +(0.00001,0.005) +(0.000034,0.006259) +(0.000105,0.008063) +(0.000276,0.01045) +(0.00096,0.016) +(0.009857,0.040616) +(0.04,0.078542) +(0.1,0.126876) +(0.22,0.199376) +(0.24,0.208468) +(0.26,0.217501) +(0.28,0.226593) +(0.3,0.238677) +(0.32,0.247709) +(0.34,0.253751) +(0.36,0.262844) +(0.38,0.271876) +(0.4,0.277918) +(0.42,0.28701) +(0.44,0.296043) +(0.46,0.299094) +(0.48,0.308186) +(0.5,0.317219) +(0.52,0.320269) +(0.54,0.329302) +(0.56,0.335344) +(0.58,0.344436) +(0.6,0.347427) +(0.62,0.353469) +(0.64,0.359511)+(0.66,0.368603) +(0.68,0.371594) +(0.7,0.377636) +(0.72,0.383677) +(0.74,0.386728) +(0.76,0.39277) +(0.78,0.398811) +(0.8,0.401802) +(0.82,0.407844) +(0.84,0.413886) +(0.86,0.419927) +(0.88,0.422978) +(0.9,0.42902) +(0.92,0.432011) +(0.94,0.438053) +(0.96,0.441103) +(0.98,0.447145) +(1,0.453187) +(2,0.604229) +(3,0.67978) +(4,0.728114) +(5,0.75228) +(6,0.773396) +(7,0.78548) +(8,0.794572) +(9,0.800614) +(9.98874,0.814996) +(21.243,0.86915) +(48.8124,0.926904) +(100,0.963746) +(200,0.990937) +(300,1) .ENDS 7001CTHM * * *========================================================================== * NDC7002N ELECTRICAL MODEL (SuperSOT-6 N-Ch DMOS) (Preliminary) * ------------------------ .SUBCKT NDC7002N 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={2.1*{-0.00192*TEMP+1.048}} KP={-0.0009*TEMP+0.385} + THETA=0.056 VMAX=4E5 LEVEL=3) Cgs 1 3 40p Rd 20 4 92m TC=0.00704 Dds 3 4 DDS .MODEL DDS D(BV={50*{0.00096*TEMP+0.976}} M=0.3 CJO=40p VJ=0.8) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=40m TT=100n) Ra 4 2 130m TC=0.00704 Rs 3 5 1m Ls 5 30 0.5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 45p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.5 CJO=45p VJ=0.15) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDC7002N * * NDC7002N THERMAL MODEL * --------------------- .SUBCKT 7001CTHM 50 40 100 Rop 50 60 1meg Cop 60 70 1u IC=0 E_W 40 70 40 60 1meg E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*156*V(90,40)} R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDC632P Single Pulsed rja(t) +(0.00001,0.005) +(0.000034,0.006259) +(0.000105,0.008063) +(0.000276,0.01045) +(0.00096,0.016) +(0.009857,0.040616) +(0.04,0.078542) +(0.1,0.126876) +(0.22,0.199376) +(0.24,0.208468) +(0.26,0.217501) +(0.28,0.226593) +(0.3,0.238677) +(0.32,0.247709) +(0.34,0.253751) +(0.36,0.262844) +(0.38,0.271876) +(0.4,0.277918) +(0.42,0.28701) +(0.44,0.296043) +(0.46,0.299094) +(0.48,0.308186) +(0.5,0.317219) +(0.52,0.320269) +(0.54,0.329302) +(0.56,0.335344) +(0.58,0.344436) +(0.6,0.347427) +(0.62,0.353469) +(0.64,0.359511) +(0.66,0.368603) +(0.68,0.371594) +(0.7,0.377636) +(0.72,0.383677) +(0.74,0.386728) +(0.76,0.39277) +(0.78,0.398811) +(0.8,0.401802) +(0.82,0.407844) +(0.84,0.413886) +(0.86,0.419927) +(0.88,0.422978) +(0.9,0.42902) +(0.92,0.432011) +(0.94,0.438053) +(0.96,0.441103) +(0.98,0.447145) +(1,0.453187) +(2,0.604229) +(3,0.67978) +(4,0.728114) +(5,0.75228) +(6,0.773396) +(7,0.78548) +(8,0.794572) +(9,0.800614) +(9.98874,0.814996) +(21.243,0.86915) +(48.8124,0.926904) +(100,0.963746) +(200,0.990937) +(300,1) .ENDS 7002NTHM * *================================================================== * NDC7003P ELECTRICAL MODEL (SuperSOT-6 P-Ch DMOS) (Preliminary) * ------------------------ .SUBCKT NDC7003P 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS PMOS (VTO={-2.7*{-0.0014*TEMP+1.035}} KP={-0.0006*TEMP+0.23} + THETA=0.056 VMAX=4E5 LEVEL=3) Cgs 1 3 40p Rd 20 4 680m TC=0.00544 Dds 4 3 DDS .MODEL DDS D(BV={50*{0.00088*TEMP+0.978}} M=0.3 CJO=40p VJ=0.8) Dbody 20 3 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=40m TT=100n) Ra 4 2 1050m TC=0.00544 Rs 3 5 1m Ls 5 30 0.5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER PMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 75p Rcgd 7 4 10meg Dgd 4 6 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.5 CJO=75p VJ=0.12) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDC7003P * * NDC7003P THERMAL MODEL * --------------------- .SUBCKT 7001CTHM 50 40 100 Rop 50 60 1meg Cop 60 70 1u IC=0 E_W 40 70 40 60 1meg E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*156*V(90,40)} R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDC632P Single Pulsed rja(t) +(0.00001,0.005) +(0.000034,0.006259) +(0.000105,0.008063) +(0.000276,0.01045) +(0.00096,0.016) +(0.009857,0.040616) +(0.04,0.078542) +(0.1,0.126876) +(0.22,0.199376) +(0.24,0.208468) +(0.26,0.217501) +(0.28,0.226593) +(0.3,0.238677) +(0.32,0.247709) +(0.34,0.253751) +(0.36,0.262844) +(0.38,0.271876) +(0.4,0.277918) +(0.42,0.28701) +(0.44,0.296043) +(0.46,0.299094) +(0.48,0.308186) +(0.5,0.317219) +(0.52,0.320269) +(0.54,0.329302) +(0.56,0.335344) +(0.58,0.344436) +(0.6,0.347427) +(0.62,0.353469) +(0.64,0.359511) +(0.66,0.368603) +(0.68,0.371594) +(0.7,0.377636) +(0.72,0.383677) +(0.74,0.386728) +(0.76,0.39277) +(0.78,0.398811) +(0.8,0.401802) +(0.82,0.407844) +(0.84,0.413886) +(0.86,0.419927) +(0.88,0.422978) +(0.9,0.42902) +(0.92,0.432011) +(0.94,0.438053) +(0.96,0.441103) +(0.98,0.447145) +(1,0.453187) +(2,0.604229) +(3,0.67978) +(4,0.728114) +(5,0.75228) +(6,0.773396) +(7,0.78548) +(8,0.794572) +(9,0.800614) +(9.98874,0.814996) +(21.243,0.86915) +(48.8124,0.926904) +(100,0.963746) +(200,0.990937) +(300,1) .ENDS 7003PTHM * * *========================================================================= * NDH831N ELECTRICAL MODEL (SuperSOT-8 N-Ch DMOS) (Preliminary) * ------------------------ .SUBCKT NDH831N 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={0.65*{-0.00416*TEMP+1.104}} KP={-0.025*TEMP+20.125} + THETA=0.086 VMAX=4E5 LEVEL=3) Cgs 1 3 1600p Rd 20 4 2m TC=0.00384 Dds 3 4 DDS .MODEL DDS D(BV={20*{0.00084*TEMP+0.979}} M=0.3 CJO=1600p VJ=0.8) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=40m TT=100n) Ra 4 2 4m TC=0.00384 Rs 3 5 1m Ls 5 30 0.5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 2200p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.5 CJO=2200p VJ=0.15) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDH831N * * NDH831N THERMAL MODEL * --------------------- .SUBCKT 831NTHM 50 40 100 Rop 50 60 1meg Cop 60 70 1u IC=0 E_W 40 70 40 60 1meg E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*156*V(90,40)} R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDH831N Single Pulsed rja(t) +(0.0001,0.0009) +(0.001,0.005) +(0.01,0.023347) +(0.05,0.059072) +(0.1,0.087589) +(0.2,0.130696) +(0.5,0.224473) +(1,0.324895) +(2,0.4391) +(10,0.702954) +(20,0.803376) +(50,0.900844) +(100,0.962025) +(200,1) +(300,1) .ENDS 831NTHM * * *================================================================== * NDH832P ELECTRICAL MODEL (SuperSOT-8 P-Ch DMOS) (Preliminary) * ------------------------ .SUBCKT NDH832P 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS PMOS (VTO={-0.9*{-0.00296*TEMP+1.074}} KP={-0.02*TEMP+14.5} + THETA=0.086 VMAX=4E5 LEVEL=3) Cgs 1 3 600p Rd 20 4 4m TC=0.004 Dds 4 3 DDS .MODEL DDS D(BV={20*{0.000624*TEMP+0.9844}} M=0.3 CJO=600p VJ=0.8) Dbody 20 3 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=40m TT=100n) Ra 4 2 8m TC=0.004 Rs 3 5 1m Ls 5 30 0.5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER PMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 2500p Rcgd 7 4 10meg Dgd 4 6 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.5 CJO=2200p VJ=0.12) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDH832P * * NDH832P THERMAL MODEL * --------------------- .SUBCKT 832PTHM 50 40 100 Rop 50 60 1meg Cop 60 70 1u IC=0 E_W 40 70 40 60 1meg E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*156*V(90,40)} R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDH832P Single Pulsed rja(t) +(0.0001,0.0009) +(0.001,0.005) +(0.01,0.023347) +(0.05,0.059072) +(0.1,0.087589) +(0.2,0.130696) +(0.5,0.224473) +(1,0.324895) +(2,0.4391) +(10,0.702954) +(20,0.803376) +(50,0.900844) +(100,0.962025) +(200,1) +(300,1) .ENDS 832PTHM * * * * NDH8436 ELECTRICAL MODEL (SuperSOT-8 N-Ch DMOS) (Preliminary) * ------------------------ .SUBCKT NDH8436 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={1.8*{-0.00376*TEMP+1.094}} KP={-0.03*TEMP+13.75} + THETA=0.056 VMAX=4E5 LEVEL=3) Cgs 1 3 800p Rd 20 4 3m TC=0.0044 Dds 3 4 DDS .MODEL DDS D(BV={30*{0.00076*TEMP+0.981}} M=0.3 CJO=800p VJ=0.8) Dbody 3 20 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=40m TT=100n) Ra 4 2 3m TC=0.0044 Rs 3 5 1m Ls 5 30 0.5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 900p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.5 CJO=1100p VJ=0.15) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDH8436 * * NDH8436 THERMAL MODEL * --------------------- .SUBCKT 8436THM 50 40 100 Rop 50 60 1meg Cop 60 70 1u IC=0 E_W 40 70 40 60 1meg E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*156*V(90,40)} R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDH8436 Single Pulsed rja(t) +(0.0001,0.0009) +(0.001,0.005) +(0.01,0.023347) +(0.05,0.059072) +(0.1,0.087589) +(0.2,0.130696) +(0.5,0.224473) +(1,0.324895) +(2,0.4391) +(10,0.702954) +(20,0.803376) +(50,0.900844) +(100,0.962025) +(200,1) +(300,1) .ENDS 8436THM * * *================================================================== * NDH8447 ELECTRICAL MODEL (SuperSOT-8 P-Ch DMOS) (Preliminary) * ------------------------ .SUBCKT NDH8447 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS PMOS (VTO={-2*{-0.00208*TEMP+1.052}} KP={-0.02*TEMP+9.5} + THETA=0.086 VMAX=4E5 LEVEL=3) Cgs 1 3 750p Rd 20 4 10m TC=0.00416 Dds 4 3 DDS .MODEL DDS D(BV={20*{0.000624*TEMP+0.9844}} M=0.3 CJO=750p VJ=0.8) Dbody 20 3 DBODY .MODEL DBODY D(IS=1.4E-13 N=1 RS=40m TT=100n) Ra 4 2 20m TC=0.00416 Rs 3 5 1m Ls 5 30 0.5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER PMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 1000p Rcgd 7 4 10meg Dgd 4 6 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.5 CJO=1000p VJ=0.12) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDH8447 * * NDH8447 THERMAL MODEL * --------------------- .SUBCKT 8447THM 50 40 100 Rop 50 60 1meg Cop 60 70 1u IC=0 E_W 40 70 40 60 1meg E_Pave 80 40 VALUE = {V(40,70)/(TIME+1n)} R80 80 40 1k E_Tja 100 40 VALUE = {V(80,40)*156*V(90,40)} R100 100 40 1k R90 90 40 1k E_rja 90 40 table {TIME} ; Normalized NDC632P Single Pulsed rja(t) +(0.0001,0.0009) +(0.001,0.005) +(0.01,0.023347) +(0.05,0.059072) +(0.1,0.087589) +(0.2,0.130696) +(0.5,0.224473) +(1,0.324895) +(2,0.4391) +(10,0.702954) +(20,0.803376) +(50,0.900844) +(100,0.962025) +(200,1) +(300,1) .ENDS 8447THM * * NDF0610 ELECTRICAL MODEL (TO-92 Single P-Ch DMOS) * ------------------------ .SUBCKT NDF0610 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS PMOS (VTO={-1.9*{-0.0012*TEMP+1.03}} KP={-0.0006*TEMP+0.315} + THETA=0.086 VMAX=3.8E5 LEVEL=3) Cgs 1 3 40p Rd 20 4 1.4 TC=0.0064 Dds 4 3 DDS .MODEL DDS D(BV={60*{0.00096*TEMP+0.976}} M=0.35 CJO=100p VJ=1.0) Dbody 20 3 DBODY .MODEL DBODY D(IS=1E-12 N=1 RS=12.7m TT=25n) Ra 4 2 1.2 TC=0.0064 Rs 3 5 10m Ls 5 30 0.5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER PMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 85p Rcgd 7 4 10meg Dgd 4 6 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.55 CJO=85p VJ=0.120) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS NDF0610 * /=9<<<<u]]Ey{/Cs't2O~ +IVXo5LM!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!- * A X o  ' 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