Fairchild Semiconductor's MicroFET™ Thin Package Targets Battery-Charging and Power-Multiplexing Applications

Fairchild Semiconductor’s integrated P-Channel PowerTrench® MOSFET and Schottky diode in a MicroFET thin package helps designers by providing a single-package solution to meet critical efficiency and thermal needs in battery charging and power-multiplexing applications, in an industry-leading low profile package.

News Highlights:

• The FDFMA2P859T provides excellent power dissipation and conduction loss characteristics
• Provides a 30 percent height reduction over the industry-standard 0.8mm MicroFET package
• Low package height of 0.55mm makes it ideal for low profile designs, such as portable and wearable cell phones, media players and medical devices
• Meets customer design requirements for exceptional thermal performance for its physical size, and to ensure a very low reverse leakage current (lr) of 1µA at Vr=10V, for the Schottky diode
• Offers improved performance and efficiency in linear mode battery charging and power-multiplexing applications
• Part of Fairchild’s extensive MOSFET portfolio designed to meet the efficiency, space and thermal needs of today’s and future design challenges.

 

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About Fairchild Semiconductor:
Fairchild Semiconductor (NYSE: FCS) is a global leader delivering energy-efficient power analog and power discrete solutions. Fairchild is The Power Franchise®, providing leading-edge silicon and packaging technologies, manufacturing strength and system expertise for consumer, communications, industrial, portable, computing and automotive systems. An application-driven, solution-based semiconductor supplier, Fairchild provides online design tools and design centers worldwide as part of its comprehensive Global Power Resource^SM. Please contact us on the web at www.fairchildsemi.com.