| Q4074814 |
12/20/2007 |
(From): StatsChipPac Kuala Lumpur, Malaysia (To): Fairchild Semiconductor Penang, Malaysia |
Q4074814.pdf |
| Q4074809 |
12/19/2007 |
(From): StatsChipPac Kuala Lumpur, Malaysia (To): Fairchild Semiconductor Penang, Malaysia |
Q4074809.pdf |
| Q4074804 |
12/19/2007 |
(From): Fairchild Semiconductor 8-inch wafer fabrication line located in Mountaintop, Pennsylvania. e (To): Fairchild Semiconductor QS 9000 approved 6-inch facility for wafer fabrication located in Bucheon, Korea. |
Q4074804.pdf |
| Q4074805 |
12/17/2007 |
(From): Selected Mosfet products currently manufactured using the 8-inch line in Mountain Top, PA. The backmetal for the affected products is being changed from 5KA, 3KA, 3.5KA, 20KA (AL-Ti-Ni-Ag). (To): Selected Mosfet devices currently fabricated at Fairchild Semiconductor 8-inch line in Mountain Top, PA, USA will be also manufactured at Advanced Semiconductor Manufacturing Corporation (ASMC), the 6-inch facility for wafer fabrication located in Shanghai, China. The backmetal of these selected devices is being changed to 3KA, 2KA, 10KA (Ti-Ni-Ag). The new backmatal, Ti-Ni-Ag, is a standard backmetal system used on other qualified MOSFET products. There will be no additional change to the die layout, die size, geometry, substrate, device specification, performance and function of any affected devices. Quality and reliability will remain at highest standard. |
Q4074805.pdf |
| Q1070802-A |
12/13/2007 |
(From): Currently being manufactured at SPS(SP Semiconductor & Communication Co Ltd.) in Korea (To): Qualify in Fairchild Semiconductor (Suzhou) Co., Ltd. China as an Alternate Assembly and Test for TO220F 5 leads. (There is no difference in package out line, process and bill of materials |
Q1070802-A.pdf |
| Q4074605 |
12/12/2007 |
(From): SOIC-08 package assemble in FSC approved manufacturing locations - Fairchild Malaysia, Amkor, Carsem, Utac Thai Limited (UTL), Unisem, GEM and PSTS using non-green mold compound as shown in table 1. (To): SOIC-08 package assemble in FSC approved manufacturing locations - Fairchild Malaysia, Amkor, Carsem, Utac Thai Limited (UTL), Unisem, GEM and PSTS using green mold compound as shown in table 2. |
Q4074605.pdf |
| Q4074815 |
12/12/2007 |
(From): SOT23 and SC70 package assembly at all FSC approved manufacturing locations (FSCP, CARSEM, HANA, UTL, AUK in Dalian, China, JCET, FSPM) using non Green mold compound as shown in table 1: (To): SOT23 and SC70 package assembly at all FSC approved manufacturing locations (FSCP, CARSEM, HANA, UTL, AUK in Dalian, China, JCET, FSPM) using Green mold compound as shown in table 2: |
Q4074815.pdf |
| Q2072402-A |
12/7/2007 |
(From): SPS , SP Semiconductor & Communication Co Ltd. (To): FSSZ , Fairchild Semiconductor (Suzhou) Co., Ltd |
Q2072402-A.pdf |
| Q4074107-A |
12/7/2007 |
(From): passivation layer without Polyimide coating. (To): Polyimide coating will be added on the passivation layer |
Q4074107-A.pdf |
| Q4074811 |
12/7/2007 |
(From): SSOT-3 and SSOT-6 package assembly in FSC approved manufacturing locations using non-Green mold compound as shown in table 1: (To): SSOT-3 and SSOT-6 package assembly at all FSC approved manufacturing locations using Green mold compound as shown in table 2: |
Q4074811.pdf |
| Q1070904 |
12/7/2007 |
(From): Selected TO252, TO262, and TO263 automotive products currently manufactured in Mountain Top, PA using Fairchild's 8-inch Fab line. These products are presently assembled and tested in Fairchild Semiconductor Cebu, Philippines or STATSChipPAC Kuala Lumpur, Malaysia subcontractor facilities. The current mold compound and plating material of the selected devices will be changed. Please refer to detailed table on page 2 of this PCN. (To): Selected products will now be produced on both 8-inch wafer diameter (located in Mountain Top, PA) as well as 6-inch wafer diameter (located in Bucheon, Korea; Fairchild Semiconductor QS 9000 and TS16949 certified Bucheon, Korea). The plating finish is being changed to Matte Sn. For mold compound changes please refer to detailed table on page 2 of this PCN |
Q1070904.pdf |
| Q4074807 |
12/5/2007 |
(From): Current die size: 76x38 (To): New die size: 83x40 |
Q4074807.pdf |
| Q4074403 |
12/04/2007 |
(From): Fairchilds Micropak packages are currently assembled at ASEM and Hana. These packages are currently assembled as follows: Substrate: Bismaleimide Triazine (BT) CCL-HL832 with NiAu plated, Die attach material: Die attach film LE5000 and LE5030, Wire: 0.8mils Au, Compound: HC-100-SG-BM, Lead Finish: NiAu plated, Packages' dimension remains unchanged. Also refer to the tables below for comparisons of this change. (To): Add FSPM (Fairchild Malaysia) as an additional assembly location for Micropak package, 6-, 8-, and 10-leads. The package material details for the FSPM location are as follows: LeadFrame: Copper frame A194 Full hard with NiPdAu pre-plated, Die attach material: Die attach film LE5003, Wire: 0.8mils Au, Compound: CK203P (Premold) and CK203M (Final mold), Lead Finish: Matte Sn. The external package dimensions will remain unchanged. Additionally the parts produced on FSPM assembly line will be identified by an _F113 suffix on Fairchild part number. |
Q4074403.pdf |
| Q4074806 |
1130/2007 |
(From): TSSOP package assembly at all FSC approved manufacturing locations using non Green mold compound as shown in table 1. (To): TSSOP package assembly at all FSC approved manufacturing locations using Green mold compound as shown in table 2. |
Q4074806.pdf |
| Q4074701 |
11/30/2007 |
(From): 8LD TSSOP package assembly at all FSC approved manufacturing locations using non Green mold compound as shown in table 1. (To): 8LD TSSOP package assembly at all FSC approved manufacturing locations using Green mold compound as shown in table 2. |
Q4074701.pdf |
| Q4074601 |
11/30/2007 |
(From): FPG 8L MLP3x3 package assembly at all FSC approved manufacturing location(s) (Carsem) using non Green mold compound as shown in table 1. (To): FPG 8L MLP 3x3 package assembly at all FSC approved manufacturing location(s) (Carsem) using Green mold compound as shown in table 2. |
Q4074601.pdf |
| Q3073802-A |
11/29/2007 |
(From): Current TO-220 heatsink and die attach pad thickness of 1.30mm. (To): New TO-220 heatsink and die attach pad thickness will be 0.51mm. There is no change in heatsink and die attach pad material. Conversion of heatsink thickness will be done on a part by part basis starting WW05 of 2008 to prevent mixing of product with different heat sink dimensions in shipments during the transition period. |
Q3073802-A.pdf |
| Q3073801-A |
11/29/2007 |
(From): Current TO-220 heatsink and die attach pad thickness of 1.30mm. Material composition of wire used for wire bonding process is gold (Au) wire and copper (Cu) wire. (To): New TO-220 heatsink and die attach pad thickness will be 0.51mm. There is no change in heatsink and die attach pad material. Material composition of wire used during wire bonding process will be copper (Cu). Conversion of heatsink thickness will be done on a part by part basis starting WW05 of 2008 to prevent mixing of product with different heat sink dimensions in shipments during the transition period. |
Q3073801-A.pdf |
| Q3073508-A |
11/29/2007 |
(From): FAN5xxxUC WL-CSP products are assembled and tested at the AMKOR facility (A5) in North Carolina, USA. (To): FAN5xxxUC WL-CSP products will be assembled at the AMKOR facility (K4) in Korea and tested at the AMKOR facility (T3) in Taiwan. |
Q3073508-A.pdf |
| Q4074106-A |
11/29/2007 |
(From): Switch products currently manufactured using Fairchild's 6-inch, class 1, fab process in South Portland, ME. (To): Switch product will now be produced on both 6 inch and 8-inch wafer Diameters. Manufacturing will occur in the same 6-inch Class-1 fab currently producing these products. In some cases, new 8 inch equipment will be added to accommodate the 6 to 8 inch processing conversion. Die size, design, geometry, or layout of the affected products remains un-changed. 8-inch products will be fully compliant to all published data sheet specifications and will be completely interchangeable with current 6-inch product. Quality and reliability will remain at the highest standards already demonstrated with Fairchild's existing products. |
Q4074106-A.pdf |
| Q3073505-A |
11/29/2007 |
(From): TO220F 2 and 3 Leads are currently being manufactured at SPS (SP Semi)/ENOCH located in Korea. (To): Qualify Fairchild Semiconductor located in Suzhou, China as an Alternate Assembly and Test manufacturing site for TO220F 2 and 3 leads. There is no difference in the Package Outline, Bill of materials and Process between the current and the Alternate manufacturing site. |
Q3073505-A.pdf |
| Q3073401-A |
11/19/2007 |
(From): DAP size from 1.4mm x 1.4mm non-matrix Also detector die size from 24mil x 24mil. (To): DAP size to 2mm x 2.3mm matrix. Also, detector die size to 17mil x 25mil. |
Q3073401-A.pdf |
| Q4070136 |
11/16/2007 |
All standard Fairchild Semiconductor products shipped after March 1, 2006 have met the RoHS directive for Lead free lead finish; therefore it is not necessary to continue to offer product both with and without the “_NL” No-Lead indicator. Product ordered with or without the “_NL” indicator is identical; there is no difference in manufacturing process, materials, or device marking. |
Q4070136.pdf |
| Q4074501 |
11/15/2007 |
(From): Selected planar UltraFET products are currently manufactured using below fab locations: 1) Fairchild's 8" fab process in Mountain Top, PA, USA. 2) Advanced Semiconductor Manufacturing Corp (ASMC) 6" fab process in Shanghai, China. 3) Central Semiconductor Manufacturing Corp (CSMC) 6" fab process in Wuxi, China. (To): Products will also be qualified using Central Semiconductor Manufacturing Corp (CSMC) 6" fab process located in Beijing, China. There will be no change to the layout, die size, geometry, substrate, device specifications, performance and function of any affected devices. Quality and reliability will remain at the highest standard. The process and materials used are identical to the original manufacturing sites. |
Q4074501.pdf |
| Q4074404 |
11/15/2007 |
(From): Selected FS35C 2LM (0.35 micron 2 layer metal) logic products currently manufactured using Fairchild's 6-inch Class 1 fab process in South Portland, ME. (To): Products will now be produced on both 6-inch and 8-inch wafer diameters. Manufacturing will occur in the same 6-inch Class 1 fab currently producing these products. New 8-inch equipment has been added to accommodate metal and dielectric layer planarization from SOG (Spin-on-glassivation) to CMP (Chemical-mechanical polish). Die size, design, geometry, or layout of the affected products remains unchanged. This change will not impact the parametric performance or electrical characteristics of any affected device. 8-inch product will be fully compliant to all published datasheet specifications and will be completely interchangeable with current 6-inch product. Quality and reliability will remain at the highest standards already demonstrated with Fairchild's existing products. |
Q4074404.pdf |
| Q4074001 |
11/13/2007 |
(From): FPG MLP 3X3 and SPG MLP 2.5X3.5 Assembly at Fairchild Semiconductor Malaysia Sdn. Bhd. (To): Carsem Malaysia Sdn. Bhd. is being added as an additional manufacturing site for FPG MLP 3X3 and SPG MLP 2.5X3.5 upon successful completion of Fairchild's qualification process. Fairchild Semiconductor Malaysia Sdn. Bhd. will continue to produce FPG MLP 3X3 and SPG MLP 2.5X3.5 package types. |
Q4074001.pdf |
| Q4074402 |
11/09/2007 |
Alternate Assembly Site Location / Qualification, Package Change (Lead Frame), Plating Material Change. |
Q4074402.pdf |
| Q3073208-A |
11/09/2007 |
(From): Change die attach epoxy, Hitachi EN4620K (To): Die attach epoxy, Henkel QMI-519 |
Q3073208-A.pdf |
| Q4074105 |
11/02/2007 |
(From): Two type of die dimension: 0.35mm * 0.35mm for 2.0-20V DO35 product; 0.45mm * 0.45mm for 22-75V DO35 product. (To): Consolidate to one die dimension 0.32 mm * 0.32 mm for 2.4V~75V DO35 product. There is no difference in package dimension, process and electrical specification after change. |
Q4074105.pdf |
| Q4074301 |
11/02/2007 |
(From): Aimhighglobal_Weihai in China (To): AUK_Dalian in China It's also certified for TS16949 and ISO14001 certificated. Reason for Change : To fully transfer the assembly & test process of TO92 high |
Q4074301.pdf |
| Q4074302 |
10/31/2007 |
(From): Pre-Driver PMOS pull-up 14x50 (700um ) x2 (To): Pre-Driver PMOS pull-up 14x50 (700 um) x1 Reason for |
Q4074302.pdf |
| Q4074103 |
10/30/2007 |
(From): Current dual lead frame (433086, 436489, 422170, 422162, 427732) (To): New matrix lead frame (426895Q, 436896Q, 436897Q, 436898Q, 436899Q) |
Q4074103.pdf |
| Q4074202 |
10/30/2007 |
(From): FANxxxx WL-CSP products are assembled and tested at the Amkor A5 facility in North Carolina, USA. (To): FANxxxx WL-CSP products will be also assembled and tested at the Fairchild facility in Penang, Malaysia. |
Q4074202.pdf |
| Q4074106 |
10/22/2007 |
(From): Switch products currently manufactured using Fairchild's 6-inch, class 1, fab process in South Portland, ME. (To): Switch product will now be produced on both 6 inch and 8-inch wafer Diameters. Manufacturing will occur in the same 6-inch Class-1 fab currently producing these products. In some cases, new 8 inch equipment will be added to accommodate the 6 to 8 inch processing conversion. Die size, design, geometry, or layout of the affected products remains un-changed. 8-inch products will be fully compliant to all published data sheet specifications and will be completely interchangeable with current 6-inch product. Quality and reliability will remain at the highest standards already demonstrated with Fairchild's existing products. Reason for Change : Fairchild Semiconductor is adding 8 inch wafer capacity for processing |
Q4074106.pdf |
| Q4074107 |
10/19/2007 |
(From): passivation layer without Polyimide coating (To): Polyimide coating will be added on the passivation layer |
Q4074107.pdf |
| Q2071901-B |
10/16/2007 |
(From): FPG MLP 2x2 Assembly at FSC Penang only (To): FPG MLP 2x2 Assembly at FSC Penang & subcon, Carsem |
Q2071901-B.pdf |
| Q3073704 |
10/12/2007 |
(From): Copper lead frame (To): Copper leadframe or Iron lead frame (Qualification of Iron(Fe)leadframe as alternate material for TO92 package) |
Q3073704.pdf |
| Q3073705 |
10/12/2007 |
(From): Wirebond material using 2mil Gold (Au) wire for SO8 devices manufactured in subcontractor site, GEM Electronics Ltd Shanghai China. (To): Wirebond material using 2mil Copper (Cu) wire for SO8 devices manufactured in subcontractor site, GEM Electronics Ltd Shanghai China. |
Q3073705.pdf |
| Q3073802 |
10/09/2007 |
(From): Thicker heatsink and die attach pad. (To): Thinner heatsink and die attach pad (there is no change in heatsink and die attach pad material). |
Q3073802.pdf |
| Q3073801 |
10/09/2007 |
(From): Thicker heatsink and die attach pad. Material composition for wire used during wire bonding process is gold wire and copper. (To): Thinner heatsink and die attach pad (there is no change in heatsink and die attach pad material). Material composition for wire used during wire bonding process will be copper. |
Q3073801.pdf |
| Q2071603-B |
10/3/2007 |
(From): AUK in Korea Description of Change (To): Jiangsu Changjiang Electronics Technology (JCET) in China is being qualified as an additional SOT89 package assembly/test site, There is no difference in package dimension, process and electrical specification between the two sites. (Marketing outline drawing refer to MKT-MA03C). |
Q2071603-B.pdf |
| Q3073404 |
9/27/2007 |
(From): Current dual leadframe (433086, 436489, 422170, 422162, 427732) Description of Change (To): New matrix leadframe (436895Q, 436896Q, 436897Q, 436898Q, 436899Q) |
Q3073404.pdf |
| Q3073302 |
9/27/2007 |
(From): Bonding wire material is Gold (Au) Description of Change (To): Bonding wire material is Copper (Cu). |
Q3073302.pdf |
| Q3073602 |
9/21/2007 |
(From): Current Marking / Flowcode Description of Change (To): Aligned Marking / Flowcode |
Q3073602.pdf |
| Q3073510 |
9/21/2007 |
(From): FDSS2407, FDSS2407_SB82086, FDSS2407_SB82097 devices manufactured with No Passivation. Description of Change (To): FDSS2407, FDSS2407_SB82086, FDSS2407_SB82097 devices manufactured with Nitride Passivation. |
Q3073510.pdf |
| Q1071304-A |
9/13/2007 |
(From) STS in Korea Description of Change (To): PSTS in China. It's also certified for ISO9001, QS-9000 and ISO14001 certificated. |
Q1071304-A.pdf |
| Q3073401 |
9/13/2007 |
(From): Strip leadframe Description of Change (To): Matrix leadframe (no change to leadframe dimensions) |
Q3073401.pdf |
| Q3073508 |
9/11/2007 |
(From): FAN5xxxUC WL-CSP products are assembled and tested at the AMKOR facility (A5) in North Carolina, USA (To): FAN5xxxUC WL-CSP products will be assembled at the AMKOR facility (K4) in Korea and tested at the AMKOR facility (T3) in Taiwan. |
Q3073508.pdf |
| Q3073506 |
9/11/2007 |
(From): 8um/40V fab process in Bucheon, Korea. (To): 1.5um/40V fab process in Bucheon, Korea. Functionality and electrical characterics remain within current datasheet specifications.
|
Q3073506.pdf |
| Q3073305 |
9/7/2007 |
(From): Current wafer and die sales Assembly Site: STATSChipPAC MALAYSIA SDN BHD (SCM) at 73, Lorong Enggang ulu Kelang FTZ, 54200 Kuala Lumpur, Malaysia. (To): New wafer and die sales Assembly Site: FAIRCHILD SEMICONDUCTOR (PHILIPPINES), INC. (FSCP) at MEPZ, Lapu-lapu City, Cebu Philippines 6015. |
Q3073305.pdf |
| Q3073505 |
9/7/2007 |
(From): SPS/Enoch (To): Fairchild Suzhou China |
Q3073505.pdf |
| Q3073502 |
9/7/2007 |
(From): SPS/Enoch (To): Fairchild Suzhou China |
Q3073502.pdf |
| Q3073504 |
9/7/2007 |
(From): AHG (To): Fairchild Suzhou China |
Q3073504.pdf |
| Q3073503 |
9/7/2007 |
(From): SPS (To): Fairchild Suzhou China |
Q3073503.pdf |
| Q3073402 |
9/6/2007 |
(From): 8-mil Aluminum wire bonding material on Source pad/lead connection.(To): 40 mils x 6 mils Aluminum ribbon bonding material on Source pad/lead connection. |
Q3073402.pdf |
| Q3073113 |
9/5/2007 |
(From): TO126 currently assembled/tested at Aimhigh Global_ Weihai and Shantou Huashan Electronic, both in China. (To): Aimhigh Global_Weihai will be removed from AVL and replaced by AUK_Dalian in China as an alternative site for TO126 assembly/test with no changes to BOM and package dimensions. Shantou Huashan Electronic in China will remain as an assembly/test site for the TO126. Both listed suppliers are ISO9001, ISO4001 and TS-16949 certified. |
Q3073113.pdf |
| Q3073208 |
9/4/2007 |
Description of Change (From): Change die attach epoxy, Hitachi EN4620K Description of Change (To): Die attach epoxy, Henkel QMI-519 |
Q3073208.pdf |
| Q3073202 |
9/4/2007 |
(From): StatsChipPAC (Kuala Lumpur, Malaysia) (To): Fairchild Semiconductor (Suzhou, China) |
Q3073202.pdf |
| Q3073204 |
8/31/2007 |
(From): StatsChipPAC (Kuala Lumpur, Malaysia) (To): Fairchild Semiconductor (Suzhou, China) Note 1: For products FGD3N60LSDTM, RHRD660S9A_S2515, RURD620CCS9A_SB82068, RURD4120S9A_SB82080, RURD660S_R4812, RURD620CCS9A_R4870,FGD3N60LSDTM_SB82092, the rectifier die diameter will change from 4" to 5"; Note 2: The molding compound for products HGTD1N120BNS9A will be EME6600CS; The molding compound for products FGD3N60LSDTM, RURD620CCS9A_R4870, RURD660S_R4812,FGD3N60LSDTM_SB82092 will be KTMC5900; The molding compound for products RHRD660S9A_S2515, RURD620CCS9A_SB82068,RURD4120S9A_SB82080 will be AMC2RC.
|
Q3073204.pdf |
| Q3073304 |
8/30/30 |
(From): Veh : 2.13/2.4/2.57(V) (To): Veh :2/2.4/2.8(V) |
Q3073304.pdf |
| Q3073212 |
8/28/2007 |
(From): Current UBM: Sputtering UBM - Ti-Cu; Solder Bumping at Amkor Technology, Inc, A5-Unitive, 140 Southcenter Ct, Suite 600Morrisville, NC 27560. (To): Alt UBM: Salt Lake, UT will add polyimide and metal layers;PacTech will add ENiAu; Solder Bumping will be done at FSC, Cebu, Philippines. |
Q3073212.pdf |
| Q3073213 |
8/24/2007 |
(From): StatsChipPAC (Kuala Lumpur, Malaysia) (To): Fairchild Semiconductor (Suzhou, China) |
Q3073213.pdf |
| Q1070803-A |
8/24/2007 |
(From): Current Assembly site: STATSChipPAC, Shanghai Description of Change (To): Alternate Assembly site: Fairchild, Malaysia |
Q1070803-A.pdf |
| Q3073203 |
8/22/2007 |
(From): StatsChipPAC (Kuala Lumpur, Malaysia)
To): Fairchild Semiconductor (Suzhou, China) Note 1: For products
HGTP12N60A4D_NW82098 and RHRP860_R4647 the Rectifier die Diameter will
change from 4" to 5"; Note 2: The molding compound for products
HGTP12N60A4D_NW82098 and RHRP860_R4647 will be EME6600CS. The molding
compound for all other products will be SI7200DX2. |
Q3073203.pdf |
| Q3073214 |
8/22/2007 |
(From): StatsChipPAC (Kuala Lumpur, Malaysia) (To):
Fairchild Semiconductor (Suzhou, China) Note 1: For products
HGT1S7N60A4DS9A_R4921 and FFB20UP20DN_SB82117 the rectifier die
diameter will change from 4" to 5"; Note 2: The molding compound for
products HGT1S7N60A4DS9A_R4921 and FFB20UP20DN_SB82117 will be
KTMC5900, the molding compound for all other products will be
EME6600CS. |
Q3073214.pdf |
| Q1070501-C |
8/22/2007 |
(From): Wire bond material currently used for our MLP
5x6 discrete products assembled from Fairchild (M), FSPM facility will
be changed from Au wire to Cu wire. Package with this change will have
an identifier. There will be no change in terms of wire diamter and
type of thermosonic bonding process applied. (To): From Au wire used
in MLP 5x6 Discrete products to Cu wire |
Q1070501-C.pdf |
| Q3073114 |
8/22/2007 |
(From): StatsChipPAC (Kuala Lumpur, Malaysia)
(To): Fairchild Semiconductor (Suzhou, China) |
Q3073114.pdf |
| Q3073115 |
8/22/2007 |
(From): StatsChipPAC (Kuala Lumpur, Malaysia)
(To): Fairchild Semiconductor (Suzhou, China), (Note: The molding
compound for products ISL9V3036D3S and FDD068AN03L will be EME6600CS,
The molding compound for all other products will be AMC2RC) |
Q3073115.pdf |
| Q2071703-A |
8/14/2007 |
(From): LMV324 and LMV358 in SOIC is currently
Assembled and Tested at subcon Carsem, Ipoh/Malaysia (To): To qualify
LMV324 and LMV358 SOIC Assembly and Test at
Fairchild's Facility in Penang, Malaysia. |
Q2071703-A.pdf |
| Q3072902 |
8/13/2007 |
(From): *Shipping box dimension: : 395*385*275mm
(To): *Shipping box Dimension: : 390*370*310mm. |
Q3072902.pdf |
| Q1071101-A |
8/13/2007 |
(From): The original location of JCET SOT223
assembly line: No 275, Binjiang Rd. M, Jiangyin, Jiangsu, P.R.C (To):
The new location of JCET SOT223 assembly line: No 78
Changshan Rd. Jiangyin, Jiangsu, P.R.C. There is no difference in
package dimension, process
and material between these sites |
Q1071101-A.pdf |
| Q3072802 |
8/10/2007 |
(From): Current manufacturing location at Fairchild
Semiconductor Malaysia Sdn. Bhd.
(To): Unisem Malaysia Sdn. Bhd. is being added as an additional
manufacturing site for SOIC-8L package type upon successful completion
of Fairchild's qualification process. Fairchild Semiconductor Malaysia
Sdn. Bhd. will continue to produce SOIC-8L package types. |
Q3072802.pdf |
| Q3073201 |
8/10/2007 |
From): Paper box packing for GBPC parts (To): Plastic
tray + box + shrinkage film to pack the GBPC parts. |
Q3073201.pdf |
| Q3072901 |
8/9/2007 |
(From): 1line: F logo 2line:device name & week code
3line:Device name) (To): 1line: F logo, assy plant code, week code
2line:Device name 3line:device name. |
|
| Q2071901-A |
8/6/2007 |
(From): FPG MLP 2x2 Assembly at FSC Penang only (To):
FPG MLP 2x2 Assembly at FSC Penang & subcon, Carsem. |
Q2071901-A.pdf |
| Q2071603-A |
8/1/2007 |
(From): AUK in Korea (To): Jiangsu Changjiang
Electronics Technology (JCET) in China is
being qualified as an additional SOT89 package assembly/test site,
There is no difference in
package dimension, process and electrical specification between the
two sites. (Marketing
outline drawing refer to MKT-MA03C). |
|
| Q3072701 |
8/1/2007 |
(From): Existing epoxy and dye (Hysol) (To): Fairchild
is adding Eclat, Epifine and Richtech as epoxy and dye material
suppliers. All of the epoxy and dye materials are qualified to be used
interchangeably. There is no difference in the form, fit, function or
manufacturability of the devices when either the Hysol material or the
alternate materials are used for assembly |
Q3072701.pdf |
| Q3072803 |
8/1/2007 |
(From): Barcode lable was attached back of Reel. (To):
Barcode lable was attached front of Reel. |
Q3072803.pdf |
| Q3072801 |
7/30/2007 |
(From): Use of special flowcode for Cu devices. (To):
Remove flowcode used for Cu devices and convert the standard part to
Cu wire. |
Q3072801.pdf |
| Q3073001 |
7/30/2007 |
(From): From Latch Circuit in Soft Start Block (To):
To Nand Logic in the soft start block and there is no electrical
specification change. |
Q3073001.pdf |
| Q1070805 |
7/19/2007 |
(From): Wirebond material using 2mil Gold (Au) wire
for SO8 devices manufactured in subcontractor site, GEM Electronics
Ltd Shanghai China. (To): Wirebond material using 2mil Copper (Cu)
wire for SO8 devices manufactured in subcontractor site, GEM
Electronics Ltd Shanghai China. |
Q1070805.pdf |
| Q2072608 |
7/13/2007 |
(From): TSC(TianJing) (To): TSC(YangXin) is being
added as an alternative assembly/test
location. There is no difference in package dimension, process and
material between the two
sites. |
Q2072608.pdf |
| Q2072402 |
6/29/2007 |
(From): AHG (To): Fairchild Suzhou in China is
being added as an alternative
assembly/test location |
Q2072402.pdf |
| Q1070804 |
06/26/2007 |
(From): Current assembly and test site: ChipPAC,
Malaysia (To): Alternate assembly and test site: Suzhou, China. This
facility is located at 1 Sutong Road, China-Singapore Suzhou
Industrial Park Suzhou, Jiangsu P. R. of China. |
Q1070804.pdf |
| Q2072501 |
6/26/2007 |
(From): AUK in Korea AHG in China (To): AUK Dalian in
China will be qualified as an alternatate assembly site for TO92
package. In addition to current suppliers,It is also TS16949 and
ISO14001certified. |
Q2072501.pdf |
| Q2072502 |
6/26/2007 |
(From): FANxxxx WL-CSP products are assembled and
tested at the Amkor facility in North Carolina, USA. (To): FANxxxx
WL-CSP products will be also assembled and tested at
the Fairchild facility in Penang, Malaysia. |
Q2072502.pdf |
| Q2071909 |
6/26/2007 |
(From): There are some items which will be
corrected from gFS: 15S(Typ)// td(on): 7.2ns(Typ), 25(max)// tr:
68ns(typ), 146ns(max)// td(off): 77ns(typ), 164ns(max)// tf:
93ns(typ), 196ns(max)// trr: 62ns(typ)// Qrr: 150nC(typ) (To): to gFS:
32S(Typ)// td(on): 39ns(Typ), 88(max)// tr: 181ns(typ), 372ns(max)//
td(off): 183ns(typ), 376ns(max)// tf: 82ns(typ), 173ns(max)// trr:
80ns(typ)// Qrr:193nC(typ) |
Q2071909.pdf |
| Q2071902 |
6/26/2007 |
(From): Signetics in Korea (To): PSTS
(Phoenix Semiconductor Telecommunication (suzhou) CO., LTD) in China |
Q2071902.pdf |
| Q20072004 |
6/26/2007 |
(From): There are no passivation layer. (To): Adding
Passivation layer on front metal. |
Q20072004.pdf |
| Q2071907 |
5/21/2007 |
(From): Lite-on Shanghai,China (To): In
addition to Lite-On Shanghai, China; Taiwan Semiconductor Company,
Tianjin, China is being added as an alternative assembly/test
location. |
Q2071907.pdf |
| Q2072401 |
6/19/2007 |
(From): 1. Shutdown Current decay time ~ 30 sec
2. Power Good logic is high when En goes low 3. Third line marking has
"C" (To): 1. Shut down current decay time ~ 1 msec 2. Power Good logic
is low when En is low 3. Third line marking has "C1" |
Q2072401.pdf |
| Q1070908-A |
5/18/2007 |
(From): Adding Fairchild Assembly site in Penang,
Malaysia as alternate Assembly site for Signetic, Korea (To): Qualify
Fairchild Assembly site in Penang, Malaysia to assemble
and test 20 lead SOP and 20 lead SOIC package. |
Q1070908-A.pdf |
| Q2071905 |
5/18/2007 |
(From): Die change. (To): Four changes were made
to the current production die with metal
mask updates. Change 1: The receiver serial clock signal was delayed
to better center on the
serial data. Change 2: Internal serial interconnects were re-routed
for better isolation from
transient signals. Change 3: The serial standby burst source current,
IODSTBY, was increased
to improve noise immunity. The serial burst source current was
increased from 130uA to 200uA typical. Change 4: ESD robustness was
improved by adding a filter to ignore ESD transientevents on the
serial lines. |
Q2071905.pdf |
| Q1070501-B |
5/16/2007 |
(From): Wire bond material currently used for
our MLP 5x6 discrete products assembled from Fairchild (M), FSPM
facility will be changed from Au wire to Cu wire. Package with this
change will have an identifier. There will be no change in terms of
wire diameter and type of thermosonic bonding process applied. (To):
From Au wire used in MLP 5x6 Discrete products to Cu wire |
Q1070501-B.pdf |
| Q1071305-A |
6/14/2007 |
(From): ENOCH, SP, STS in Korea, SHEDCL in
China.(To): ENOCH, SP in Korea, SHEDCL and PSTS in China. |
Q1071305-A.pdf |
| Q2071901 |
5/14/2007 |
(From): FPG MLP 2x2 Assembly at FSC Penang only (To):
FPG MLP 2x2 Assembly at FSC Penang & subcon, Carsem |
Q2071901.pdf |
| Q2072203 |
6/13/2007 |
(From): Current Plating Coverage: Full NiPdAu
Plating. Current Die attach Material: Tin-Antimony (Sn8.5Sb). (To):
Proposed Plating Coverage: Selective NiPdAu plating on the
leadposts and exposed pad areas. The rest of the areas will be bare
Copper. Proposed Die attach Material: High-Lead (92.5Pb5Sn2.5Ag). |
Q2072203.pdf |
| Q1070907-A |
6/13/2007 |
(From): STATS ChipPAC in Malaysia (To): STATS
ChipPAC in Malaysia and Fairchild Suzhou China |
Q1070907-A.pdf |
| Q2071910 |
6/13/2007 |
(From): TO-3PN Package :L/F plating change : from Bare
Cu L/F + With pre-bake process (To): to Ni plated L/F + Without
pre-bake process |
Q2071910.pdf |
| Q2072102 |
6/12/2007 |
(From): Aim High Global in Korea (To): Fairchild
Suzhou China |
Q2072102.pdf |
| Q2072201 |
6/11/2007 |
(From): aimhigh global corp. in Korea. (To): SP
Semiconductor & Communication Co., Ltd. in Korea. |
Q2072201.pdf |
| Q2071701 |
6/8/2007 |
(From): Fairchild (Suzhou) in China (To): GEM
(Shanghai) in China |
Q2071701.pdf |
| Q2071605 |
6/6/2007 |
(From): Au wire bonding in SPM3/3V package
(To): Copper wire bonding in SPM3/3V package |
Q2071605.pdf |
| Q1070903-A |
6/4/2007 |
(From): Current die size: 76x38. With no gate
runner. (To): New die size: 83x40. With 1 gate runner. |
Q1070903-A.pdf |
| Q2072101 |
5/30/2007 |
(From): Fairchild Semiconductor products, 74AC138,
74AC139, 74ACT138 and 74ACT139 are currently manufactured in South
Portland, Maine using a 6-inch
FACT2.0 process.(To): Fairchild Semiconductor will produce these
products at wafer Fab CSMC, located in WuXi, China (PRC). The products
listed in the FSID list at the bottom of this document will be
manufactured on 6 inch wafers using a CS80C process. All current
product package materials, dimensions, markings and datasheet
specifications will remain unchanged. |
Q2072101.pdf |
| Q1071307 |
5/11/2007 |
(From): TiNiAg Backmetal and eutectic die attach
process (To): TiNiAg backmetal and skip cure adhesive die attach
process |
Q1071307.pdf |
| Q2071704 |
5/11/2007 |
(From): Fairchild (Suzhou) in China (To):
GEM (Shanghai) in China |
Q2071704.pdf |
| Q1070902-A |
5/9/2007 |
(From): Mold compound Sumitomo G770; Bond wire
HP(99.99); Solder ball composition SAC405; Solder mask material AUS05
(To): Mold compound Nitto GE-100-LFC-S; Bond wire HTS(99.0); Solder
ball composition SAC105; Solder mask material AUS308 Pg. 1 |
Q1070902-A.pdf |
| Q2071703 |
5/9/2007 |
(From): LMV324 and LMV358 is currently Assembled and
Tested at Carsem (To): To qualify Assembly and Test at Penang |
Q2071703.pdf |
| Q1070601-A |
5/8/2007 |
(From): 8-pin DIP coplanar construction (225C max
reflow solder rating) (To): 8-pin DIP over-under construction (260C
max reflow solder rating). |
Q1070601-A.pdf |
| Q1071104 |
5/8/2007 |
(From): Current assembly location: ChipPAC,
Malaysia (To): Alternate assembly location: Suzhou, China |
Q1071104.pdf |
| Q2071702 |
5/7/2007 |
(From): Die change To): Four changes were made
to the current production die with metal mask updates. Change 1: The
receiver serial clock signal was delayed to better center on the
serial data. Change 2: Internal serial interconnects were re-routed
for better isolation from
transient signals. Change 3: The serial standby burst source current,
IODSTBY,was increased to improve noise immunity. The serial burst
source current was increased from 130uA to 200uA typical. The master
burst standby current, IBRST_M,was increased from 1.1mA to 1.3mA
typical. Change 4: ESD robustness was improved by adding a filter to
ignore ESD transient events on the serial lines. |
Q2071702.pdf |
| Q2071501 |
4/30/2007 |
(From): Change in carrier tape dimension from Ao =
1.67 +/- 0.05 mm, Bo = 1.17 +/- 0.05
(To): Change in carrier tape dimension to Ao = 1.63 +/- 0.05 mm, Bo =1.12
+/- 0.05 mm |
Q2071501.pdf |
| Q1071005-A |
4/27/2007 |
(From): 1. Die attach method: Two chip die
attach 2. Wire size & QTY:20mil *2ea per chip 3. Ass'y site for
TO-220: SP, FSSZ Jedec, SHEDCL (To): 1. Die attach method: Dual chip
die attach 2. Wire size & QTY:15mil *1ea per chip 3. Ass'y site for
TO-220: SP, FSSZ Jedec, SHEDCL, FSSZ none Jedec, Enoch. |
Q1071005-A.pdf |
| Q2071401 |
4/26/2007 |
(From): Mold Compound Sumitomo G770 (To): Mold
Compound Nitto GE-100-LFC-S |
Q2071401.pdf |
| Q2071601 |
4/26/2007 |
(From): PanJIT Electronics International Inc.
(To): Taiwan Semiconductor Co., Ltd. |
Q2071601.pdf |
| Q3063801 |
4/19/2007 |
(From): SOT-89 Lead frame pad with hole. (To):
SOT-89 Lead frame pad without hole. |
Q3063801.pdf |
| Q2071503 |
4/19/2007 |
(From): FAB process : 8um/40V (To): FAB process
: 1.5um/40V |
Q2071503.pdf |
| Q1071101 |
4/18/2007 |
(From): The original location of JCET SOT223 assembly
line: No 275, Binjiang Rd. M, Jiangyin, Jiangsu, P.R.C (To): The
proposed new location of JCET SOT223 assembly line: No 78 Changshan
Rd. Jiangyin, Jiangsu, P.R.C |
Q1071101.pdf |
| Q1071202 |
4/18/2007 |
(From): 1) Noise sensitivity causing logic errors. 2)
Test program measure Ilim pin voltage at fixed Vcc 3) Third line top
mark: C (To): 1) Add a noise filter in the logic block to reduce the
sensitivity to noise. 2) Test program revised to insure stability of
Ilim pin voltage versus Vcc. 3) Third line top mark: C1 |
Q1071202.pdf |
| Q1070908 |
4/5/2007 |
(From): Adding Fairchild Assembly site in Penang,
Malaysia as alternate
Assembly site for Signetic, Korea. (To): Qualify Fairchild Assembly
site in Penang, Malaysia to assemble and test 20 lead SOP and 20 lead
SOIC package |
Q1070908.pdf |
| Q1071201 |
4/2/2007 |
(From): The current 74F161A, 74F163A, 74F191 and
74F269 data sheets specify a minimum FMAX (Maximum Clock Frequency)
and/or a typical FMAX value at room and at temperature.(To): The
revised data sheets will specifiy only a typical FMAX value at
room temperature. |
Q1071201.pdf |
| Q1070601 |
3/27/2007 |
(From): 8-pin DIP coplanar construction (To):
8-pin DIP over-under construction |
Q1070601.pdf |
| Q1070906 |
3/26/2007 |
(From): Current fab location: Salt Lake, Utah
(To): Alternate fab location: Mountain Top, PA |
Q1070906.pdf |
| Q4065002 |
3/23/2007 |
(From): See details in Change From table (To): See
details in Change To table |
Q4065002.pdf |
| Q1070902 |
3/20/2007 |
(From): To improve the robustness of the package
bill of materials resulting in increased resistance to intermettalic
degradation, use of a Green mold compound, and improved tolerance to
mechanical shock. Overall, the BOM change is being pursued to
improve the reliability of the product. (To): To enhance the
robustness of the package bill of materials resulting in increased
resistance to intermettalic degradation, use of a Green mold compound,
and increased tolerance to mechanical shock. Overall, the BOM change
is being pursued to enhance the reliability of the product. |
Q1070902.pdf |
| Q1070907 |
3/20/2007 |
(From): STATS ChipPAC in Malaysia (To): STATS ChipPAC
in Malaysia and Fairchild Suzhou China |
Q1070907.pdf |
| Q1071005 |
3/20/2007 |
QTY:20mil*2ea per chip 3. Ass'y site for TO-220: SP,
FSSZ Jedec, SHEDCL Description of Change (To): 1. Die attach method:
Dual chip die attach 2. Wire size & QTY:15mil *1ea per chip 3. Ass'y
site for TO-220: SP, FSSZ Jedec, SHEDCL, FSSZ none
Jedec, Enoch. |
Q1071005.pdf |
| Q1071004 |
3/20/2007 |
(From): Die attach method: Two chip die attach
Wire size & QTY : 20mil *2ea per chip Ass'y site for TO-220F: SP.
(To): Die attach method: Dual chip die attach Wire size & QTY :
15mil*1ea per chip Ass'y site for TO-220F: SP |
Q1071004.pdf |
| Q1070903 |
3/16/2007 |
(From): Current die size: 76x38 With no gate runner
(To): New die size: 83x40 With 1 gate runner |
Q1070903.pdf |
| Q1070402 |
3/09/2007 |
(From): Current assembly and test site: SCM - ChipPAC,
Malaysia. To change from single 15mil wire-bond. (To): Alternate
assembly and test site: FSSZ - Suzhou, China. To single
20mil wire-bond. |
Q1070402.pdf |
| Q1071001 |
3/9/2007 |
(From): Typical value of Reverse Recovery Charge
is 2.1uC. (Condition: VGS = 0 V, IS = 15 A,dIF / dt = 100 A/?s) (To):
Typical value of Reverse Recovery Charge is 0.4uC. (Condition : VGS =
0 V, IS = 15 A,dIF / dt = 100 A/?s) |
Q1071001.pdf |
| Q3064005 |
3/8/2007 |
(From): Fairchild will change the cover tape used in
packaging BGA
devices to a Pressure Sensitive Adhesive (cold seal).
(To): To a cover tape with Heat Activated Adhesive (heat seal). The
supplier for carrier and cover tapes will also be changed from 3M to
SPT but the carrier tape dimensions will remain the same. |
Q3064005.pdf |
| Q1070501 |
3/5/2007 |
(From): Wire bond material currently used for our MLP
5x6 discrete
products assembled from Fairchild (M), FSPm facility will be changed
from Au wire to Cu
wire. Package with this change will have an identifier. There will be
no change in terms of wire
diamter and type of thermosonic bonding process applied.
(To): From Au wire used in MLP 5x6 Discrete products to Cu wire |
Q1070501.pdf |
| Q1070803 |
3/2/2007 |
(From): Current Assembly site: STATSChipPAC, Shanghai
(To): Alternate Assembly site: Fairchild, Malaysia |
Q1070803.pdf |
| Q1070201 |
2/28/2007 |
(From): Standard 1.5 x 1.5 BGA lead frame. See
drawings attached under "Change To" section.
(To): 1.5 x 1.5 BGA "Folded leadframe" design. See drawings attached. |
Q1070201.pdf |
| Q1070101 |
2/13/2007 |
From): Change in carrier tape pocket hole dimension
from 1.0 mm (To): Change in carrier tape pocket hole dimension to 0.8
mm. |
Q1070101.pdf |
| Q1070401 |
2/1/2007 |
(From): Eliminate the Caution Label found in the
moisuture barrier bag per IPC/JEDEC J-STD-033B (To): An additional
label is placed on the bag to indicate the Level 1 classification and
maximum reflow temperature information in human readable form. See
attached sample: |
Q1070401.pdf |
| Q1070302 |
1/29/2007 |
(From): Fairchild Semiconductor products, 74AC245 and
74ACT245 are currently manufactured in South Portland, Maine using a
6-inch FACT2.0 process.(To): Fairchild Semiconductor will produce
these products at wafer Fab, CSMC, located in WuXi, China (PRC). The
products listed in the FSID list at the bottom of this
document will be manufactured on 6 inch wafers using a CS80C process.
All current product
package materials, dimensions, markings and datasheet specifications
will remain unchanged. |
Q1070302.pdf |
| Q2062704 |
1/23/2007 |
(From): Fairchild Bucheon managed devices are using
two types of Lead frame (Groove type, Non Groove type) for devices
packaged in D/I-PAK.(To): One type of Lead frame(Non Groove type) will
be used. |
Q2062704.pdf |
| Q4064501 |
1/23/2007 |
(From): PanJIT Electronics International Inc.
(To): Taiwan Semiconductor Co., Ltd |
Q4064501.pdf |
| 20060301-B |
1/18/2007 |
Fairchild Semiconductor is qualifying Nantong-Fujitsu
Microelectronics, based in Nantong, Jiangsu Province, China as the
out-source assembly and test location for NMDIP package types that are
currently assembled and tested in Fairchild Malaysia facility. These
NMDIP products will be completely out-source to Nantong upon
successful completion of Fairchild's qualification process. Nantong-Fujitsu
Microelectronics is ISO9001:2000, QS9000 and ISO14001 certified. |
20060301-B.rtf |
| Q4064901 |
1/09/2007 |
Fairchild issued an initial company-wide PCN to all
customers of record announcing the transition to Pb-free products on
July 11, 2003 (PCN # 20032701). In that notification, the following
statement was made, “The manufacture of products with tin-lead plating
will be completely discontinued as products with lead-free finish are
introduced. After the transition period, Fairchild's standard products
will only be available with a lead-free finish”. An additional
notification was sent to all customers of record on May 24, 2004 (PCN
# 20032701-A) which stated, “As each package type is converted, the
manufacture of products with traditional SnPb plating will be
completely discontinued. After the transition period, Fairchild’s
standard products will only be available with a Pb-free finish”. As
stated on the Pb-free section of Fairchild’s website, “Fairchild's
goal is to transition all customers to Pb-free products. We do
understand that for various reasons, some customers will not be ready
to convert to Pb-free processing at this time. Fairchild will help
these customers by continuing a supply of SnPb products for as long as
manufacturing capability and viable customer demand exists. However,
many of our manufacturing facilities and partners no longer have the
ability to provide SnPb plating. Several others are likely to
eliminate SnPb plating by the end of calendar year 2006. It is likely
that our ability to provide SnPb plated products after the beginning
of 2007 will be limited”. Since the conversion to Pb-free, Fairchild
has continued efforts to support customers with SnPb products whenever
possible. However, the overwhelming acceptance of Pb-free products has
led to a greatly reduced demand for SnPb devices and it is becoming
increasingly difficult to source these parts. At this time Fairchild
can no longer commit to a continued supply and must follow through on
the previous customer notifications to completely discontinue the
support for SnPb products. |
Q4064901.pdf |
| Q4064703 |
12/18/2006 |
(From): LM358 and LM393 use the 8um/40V Bipolar
process in FCS,
Korea (To): LM358 and LM393 use the 2um/36V Bipolar process in BCDsemi,
China |
Q4064703.pdf |