2N7000

N-Channel Enhancement Mode Field Effect Transistor

General DescriptionGeneral Description

These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

Product Status/Pricing/PackagingProduct Status/Pricing/Packaging

ProductProduct statusEco StatusPricing*Package typeLeadsPacking methodPackage DrawingPackage Marking Convention**
2N7000Full ProductionRoHS Compliant$0.082TO-923BULK PDFLine 1: $Y (Fairchild logo)
&Z (Asm. Plant Code)
&3 (3-Digit Date Code)
Line 2: 2N Line 3: 7000
2N7000_D26ZFull ProductionRoHS Compliant$0.061TO-923TAPE REEL PDFLine 1: $Y (Fairchild logo)
&Z (Asm. Plant Code)
&3 (3-Digit Date Code)
Line 2: 2N Line 3: 7000

FeaturesFeatures


  • High density cell design for extremely low RDS(ON).
  • Voltage controlled small signal switch.
  • Rugged and Relaible.
  • High saturation current capability.

ModelsModels

For additional information please visit the Models page.

Package & leadsConditionTemperature rangeVcc rangeSoftware versionRevision date
PSPICE
TO-92-3Electrical25°C to 125°CN/AOrcad 9.1Aug 6, 2002
Electrical/Thermal-55°C to 125°C0V to 5VOrCAD 15.7Nov 5, 2007

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