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BSS123
N-Channel Logic Level Enhancement Mode Field Effect Transistor

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Contents

General Description
Features
Product Status/Pricing/Packaging
Order Samples
Models
Qualification Support

General Description

These N-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

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Features

  • 0.17A, 100V
    • RDS(ON) = 6 W @ VGS = 10V
    • RDS(ON) = 10 W @ VGS = 4.5V
  • High density cell design for extremely low RDS(ON)
  • Rugged and reliable
  • Compact industry standard SOT-23 surface mount package

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Datasheet
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Product Status/Pricing/Packaging      buy now

ProductProduct statusEco StatusPackage typeLeadsPacking methodPackage DrawingPackage Marking Convention**
BSS123Full ProductionRoHS CompliantSOT-233TAPE REEL PDFLine 1: &Y (Binary Calendar Year Coding)
Line 2: SA
** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

Package marking information for product BSS123 is available. Click here for more information .

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Models

Package & leadsConditionTemperature rangeSoftware versionRevision date
PSPICE
SOT-23-3Electrical/Thermal25°C to 125°CN/AMay 15, 2002

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BSS123

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