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N-Channel Logic Level Enhancement Mode Field Effect Transistor
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General Description
These N-Channel enhancement mode field effect
transistors are produced using Fairchild’s proprietary,
high cell density, DMOS technology. These products
have been designed to minimize on-state resistance
while provide rugged, reliable, and fast switching
performance.These products are particularly suited for
low voltage, low current applications such as small
servo motor control, power MOSFET gate drivers, and
other switching applications.
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Features
- 0.17A, 100V
- RDS(ON) = 6 W @ VGS = 10V
- RDS(ON) = 10 W @ VGS = 4.5V
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High density cell design for extremely low RDS(ON)
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Rugged and reliable
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Compact industry standard SOT-23 surface mount
package
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