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BSS138
50V N-Channel Logic Level Enhancement Mode Field Effect Transistor

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Contents

General Description
Features
Product Status/Pricing/Packaging
Order Samples
Models
Application Notes
Qualification Support

General Description

These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

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Features

  • 0.22 A, 50 V. RDS(ON) = 3.5 W @ VGS = 10 V
  • High density cell design for extremely low RDS(ON).
  • Rugged and Relaible.
  • Compact industry standard SOT-23 surface mount package.

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Datasheet
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Product Status/Pricing/Packaging      buy now

ProductProduct statusEco StatusPricing*Package typeLeadsPacking methodPackage DrawingPackage Marking Convention**
BSS138Full ProductionRoHS Compliant$0.061SOT-233TAPE REEL PDFLine 1: &Y (Binary Calendar Year Coding)
Line 2: SS
* Fairchild 1,000 piece Budgetary Pricing
** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

Package marking information for product BSS138 is available. Click here for more information .

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Models

Package & leadsConditionTemperature rangeSoftware versionRevision date
PSPICE
SOT-23-3Electrical25°C to 125°COrcad 9.1Oct 14, 2004

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Application Notes

AN-9041: AN-9041 PFCM Design Guide with Analog PFC IC (347 K) Nov 28, 2008
 

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Qualification Support

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BSS138

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