BSS138

50V N-Channel Logic Level Enhancement Mode Field Effect Transistor

General DescriptionGeneral Description

These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

Product Status/Pricing/PackagingProduct Status/Pricing/Packaging

ProductProduct statusEco StatusPricing*Package typeLeadsPacking methodPackage DrawingPackage Marking Convention**
BSS138Full ProductionRoHS Compliant$0.061SOT-233TAPE REEL PDFLine 1: &Y (Binary Calendar Year Coding)
Line 2: SS

FeaturesFeatures


  • 0.22 A, 50 V. RDS(ON) = 3.5 W @ VGS = 10 V
  • High density cell design for extremely low RDS(ON).
  • Rugged and Relaible.
  • Compact industry standard SOT-23 surface mount package.

Application NotesApplication Notes

ModelsModels

For additional information please visit the Models page.

Package & leadsConditionTemperature rangeSoftware versionRevision date
PSPICE
SOT-23-3Electrical25°C to 125°COrcad 9.1Oct 14, 2004

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