These P-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications requiring up to 0.13A DC and can deliver current up to 0.52A. This product is particularly suited to low voltage applications requiring a low current high side switch.

• BSS84:-0.13A, -50V. R_DS(ON) = 10 W @ V_GS = -5 V
• Voltage controlled small signal switch.
• High density cell design for extremely low R_DS(ON).
• High saturation current.