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BSS84
P-Channel Enhancement Mode Field Effect Transistor

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Contents

General Description
Features
Product Status/Pricing/Packaging
Order Samples
Models
Qualification Support

General Description

These P-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications requiring up to 0.13A DC and can deliver current up to 0.52A. This product is particularly suited to low voltage applications requiring a low current high side switch.

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Features

  • BSS84:-0.13A, -50V. RDS(ON) = 10 W @ VGS = -5 V
  • Voltage controlled small signal switch.
  • High density cell design for extremely low RDS(ON).
  • High saturation current.

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Datasheet
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Product Status/Pricing/Packaging      buy now

ProductProduct statusEco StatusPackage typeLeadsPacking methodPackage DrawingPackage Marking Convention**
BSS84Full ProductionRoHS CompliantSOT-233TAPE REEL PDFLine 1: &Y (Binary Calendar Year Coding)
Line 2: SP
** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

Package marking information for product BSS84 is available. Click here for more information .

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Models

Package & leadsConditionTemperature rangeSoftware versionRevision date
PSPICE
SOT-23-3Electrical25°C to 125°COrcad 9.1Aug 28, 2001

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BSS84

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