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6-Pin DIP High BVceo Phototransistor Output Optocoupler
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General Description
The CNY17XM, CNY17FXM and MOC810XM devices consist of a Gallium Arsenide IRED coupled with an NPN phototransistor in a dual in-line package.
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Features
- UL recognized (File # E90700, Vol. 2)
- VDE recognized
- Add option V (e.g., CNY17F2VM)
- File #102497
- Current transfer ratio in select groups
- High BVCEO: 70V minimum (CNY17XM, CNY17FXM, MOC810XM)
- Closely matched current transfer ratio (CTR) minimizes unit-to-unit variation.
- Very low coupled capacitance along with no chip to pin 6 base connection for minimum noise susceptability (CNY17FXM, MOC810XM)
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