The SupreMOS® MOSFET is Fairchild Semiconductor®’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
| Product | Product & Eco Status | *Pricing | Packaging & Packing Info | **Package Marking Convention | Qualification Support | Compliance Certificates |
|---|---|---|---|---|---|---|
| FCP16N60N |
Full Production ROHS Compliant |
$4.03 | TO-220 3L Details RAIL |
Line 1:$Y (Fairchild logo) &Z (Plant Code) &3 (3-Digit Date Code) &K
Line 2:FCP
Line 3:16N60N |
FIT :
1.2
RTHETA (JA) : 62.5 °C/W RƟJC : 0.93 °C/W Show more... |
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| Application Note | Description |
|---|---|
| AN-9065 | FRFET® in Synchronous Rectification(156 K) 14-Feb-2013 |
| AN-9005 | Driving and Layout Design for Fast Switching Super-Junction MOSFETs(1,778 K) 14-Feb-2013 |
| AN-6099 | New PowerTrench® MOSFET with Shielded Gate Technology Increases System Efficiency and Power Density in Synchronous Rectification Applications(1,172 K) 12-Mar-2013 |
| AN-7533 | A Revised MOSFET Model With Dynamic Temperature Compensation(132 K) 05-Mar-2011 |
| AN-7510 | A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options(222 K) 05-Mar-2011 |
| AN-558 | Introduction to Power MOSFETs and their Applications(244 K) 03-May-2013 |
| AN-9010 | MOSFET Basics(361 K) 05-Mar-2011 |
| AN-8027 | FAN480X PFC+PWM Combination Controller Application(629 K) 03-Mar-2011 |
| AN-9068SC | Gate Resistor Design Guidelines for SupreMOS® (Chinese Translation)(735 K) 21-Jul-2011 |
| AN-9068 | Gate Resistor Design Guidelines for SupreMOS®(251 K) 10-Apr-2013 |