FDA16N50_F109

Datasheet Buy Sample

500V N-Channel MOSFET, UniFET™

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.     This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

Product Status/Pricing/Packing

Product Product Status Eco Status *Pricing Package Type Leads Packing Method Package Drawing **Package Marking Convention RoHS IPC1752 RoHS/REACH/JIG Certificate of Compliance
FDA16N50_F109 Full Production ROHS Compliant $2.17 TO3P 3-LEAD 3 RAIL PDF Line 1:$Y (Fairchild logo)
&Z (Asm. Plant Code)
&3 (3-Digit Date Code)
&K
Line 2:FDA
Line 3:16N50
PDF opens in a new window
XML opens in a new window
PDF opens in a new window

Features

  • 16.5A, 500V, RDS(on) = 0.38Ω @VGS = 10 V
  • Low gate charge ( typical 32 nC)
  • Low Crss ( typical 20 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability

Applications

  • TBA
Multilanguage - Chinese Multilanguage - English Multilanguage - Japanese Multilanguage - Korean