FDA28N50

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500V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using Failchild’s proprietary, planar stripe, DMOS technology.This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These device are well suited for high efficient switched mode power supplies and active power factor correction.

Product Status/Pricing/Packing

Product Product Status Eco Status *Pricing Package Type Leads Packing Method Package Drawing **Package Marking Convention RoHS IPC1752 RoHS/REACH/JIG Certificate of Compliance
FDA28N50 Full Production ROHS Compliant $4.17 TO3P 3-LEAD 3 RAIL PDF Line 1:$Y (Fairchild logo)
&Z (Asm. Plant Code)
&3 (3-Digit Date Code)
&K
Line 2:FDA
Line 3:28N50
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Features

  • RDS(on) = 0.122Ω ( Typ.)@ VGS = 10V, ID = 14A
  • Low gate charge ( Typ. 80nC)
  • Low Crss ( Typ. 42pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability
  • RoHS compliant

Applications

  • TBA

Application Notes

Multilanguage - Chinese Multilanguage - English Multilanguage - Japanese Multilanguage - Korean