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General Description
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These N-Channel enhancement mode power field effect transistors
are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to minimize
on-state resistance, provide superior switching performance,
and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high efficient
switched mode power supplies and active power factor
correction.
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Features
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70A, 200V, RDS(on) = 0.035Ω @VGS = 10 V
Low gate charge ( typical 66 nC)
Low Crss ( typical 89 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
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Datasheet
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