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300V N-Channel MOSFET, UniFET™
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General Description
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These N-Channel enhancement mode power field effect transistors
are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to minimize
on-state resistance, provide superior switching performance,
and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high efficient
switched mode power supplies and active power factor
correction.
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Features
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34A, 300V, RDS(on) = 0.056Ω @VGS = 10 V
Low gate charge ( typical 77 nC)
Low Crss ( typical 80 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
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Datasheet
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This page
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Product Status/Pricing/Packaging 
| FDAF59N30 | Lifetime Buy | RoHS Compliant | TO-3PF | 3 | RAIL
| N/A | Line 1: $Y (Fairchild logo) &Z (Asm. Plant Code) &3 (3-Digit Date Code) &K
Line 2: FDAF
Line 3: 59N30
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Qualification Support
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