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FDB029N06
60V N-Channel PowerTrench® MOSFET

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Contents

General Description
Features
Applications
Product Status/Pricing/Packaging
Order Samples
Models
Qualification Support

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

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Features

  • RDS(on) = 2.4mΩ ( Typ.)@ VGS = 10V, ID = 75A
  • Fast Switching Speed
  • Low Gate Charge
  • High Performance Trench Technology for Extremely Low RDS(on)
  • High Power and Current Handling Capability
  • RoHS compliant
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    Applications

  • DC to DC Convertors / Synchronous Rectification
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    Product Status/Pricing/Packaging      buy now

    ProductProduct statusEco StatusPricing*Package typeLeadsPacking methodPackage DrawingPackage Marking Convention**
    FDB029N06Full ProductionRoHS Compliant$3.10TO-263(D2PAK)3TAPE REEL TS2ALine 1: $Y (Fairchild logo)
    &Z (Asm. Plant Code)
    &3 (3-Digit Date Code)
    &K Line 2: FDB Line 3: 029N06
    * Fairchild 1,000 piece Budgetary Pricing
    ** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

    Package marking information for product FDB029N06 is available. Click here for more information .

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    Models

    Package & leadsConditionTemperature rangeSoftware versionRevision date
    Pspice_Bsim3.1
    TO-263(D2PAK)-3Electrical-55°C to 175°COrCAD 15.7Mar 18, 2009

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    Qualification Support

    Click on a product for detailed qualification data

    Product
    FDB029N06

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