FDB12N50TM

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.      This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

• Fairchild 1,000 piece Budgetary Pricing. *
• If there is no sample button displayed at the top of the page, please contact one of the Fairchild distributors or your local sales office to obtain samples.
• Top mark packaging information for product FDB12N50TM is available. **

Product	Product Status	Eco Status	*Pricing	Package Type	Leads	Packing Method	Package Drawing	**Package Marking Convention	RoHS IPC1752	RoHS/REACH/JIG Certificate of Compliance
FDB12N50TM	Full Production	ROHS Compliant	$1.3	TO-263(D2PAK)	2	TAPE REEL		Line 1:$Y (Fairchild logo) &Z (Asm. Plant Code) &3 (3-Digit Date Code) &K Line 2:FDB Line 3:12N50