FDB14N30

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300V N-Channel MOSFET, UniFET™

General Description

These N–Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.This advanced technology has been especially tailored to minimize on–state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

Product Status/Pricing/Packing

Product Product Status Eco Status *Pricing Package Type Leads Packing Method Package Drawing **Package Marking Convention RoHS IPC1752 RoHS/REACH/JIG Certificate of Compliance
FDB14N30TM Full Production ROHS Compliant $0.96 TO-263(D2PAK) 2 TAPE REEL PDF Line 1:$Y (Fairchild logo)
&Z (Asm. Plant Code)
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Features

  • 14A, 300V, RDS(on) = 0.29Ω @VGS = 10 V
  • Low gate charge ( typical 18 nC )
  • Low Crss ( typical 17 pF)
  • Fast Switching
  • 100% avalanche tested
  • Improved dv/dt capability

Applications

  • TBA
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