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FDB14N30
300V N-Channel MOSFET

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Contents

General Description
Features
Product Status/Pricing/Packaging
Order Samples
Qualification Support

General Description

These N–Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on–state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

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Features

  • 14A, 300V, RDS(on) = 0.29Ω @VGS = 10 V
  • Low gate charge ( typical 18 nC )
  • Low Crss ( typical 17 pF)
  • Fast Switching
  • 100% avalanche tested
  • Improved dv/dt capability
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    Product Status/Pricing/Packaging      buy now

    ProductProduct statusEco StatusPricing*Package typeLeadsPacking methodPackage DrawingPackage Marking Convention**
    FDB14N30TMFull ProductionRoHS Compliant$0.92TO-263(D2PAK)2TAPE REEL TS2ALine 1: $Y (Fairchild logo)
    &Z (Asm. Plant Code)
    &E&3 (3-Digit Date Code)
    Line 2: FDB Line 3: 14N30
    * Fairchild 1,000 piece Budgetary Pricing
    ** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

    Package marking information for product FDB14N30 is available. Click here for more information .

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    Qualification Support

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    FDB14N30TM

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