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300V N-Channel MOSFET, UniFET™
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General Description
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These N–Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on–state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
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Features
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14A, 300V, RDS(on) = 0.29Ω @VGS = 10 V
Low gate charge ( typical 18 nC )
Low Crss ( typical 17 pF)
Fast Switching
100% avalanche tested
Improved dv/dt capability
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Datasheet
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Product Status/Pricing/Packaging
| FDB14N30TM | Full Production | RoHS Compliant | $0.87 | TO-263(D2PAK) | 2 | TAPE REEL
| TS2A | Line 1: $Y (Fairchild logo)
&Z (Asm. Plant Code)
&3 (3-Digit Date Code)
&K
Line 2: FDB
Line 3: 14N30
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* Fairchild 1,000 piece Budgetary Pricing
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| ** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples |
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Qualification Support
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Eco Status