FDB150N10

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100V N-Channel PowerTrench® MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Product Status/Pricing/Packing

Product Product Status Eco Status *Pricing Package Type Leads Packing Method Package Drawing **Package Marking Convention RoHS IPC1752 RoHS/REACH/JIG Certificate of Compliance
FDB150N10 Full Production ROHS Compliant $2.17 TO-263(D2PAK) 2 TAPE REEL PDF Line 1:$Y (Fairchild logo)
&Z (Asm. Plant Code)
&3 (3-Digit Date Code)
&K
Line 2:FDB
Line 3:150N10
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Features

  • RDS(on) = 12mΩ ( Typ.) @ VGS = 10V, ID = 49A
  • Fast switching speed
  • Low gate charge
  • High performance trench technology for extremely low RDS(on)
  • High power and current handling capability
  • RoHS compliant

Applications

  • TBA
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