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FDB2532
150V N-Channel UltraFET Trench MOSFET
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Features
r
DS(ON)
= 14m
W
(Typ.), V
GS
= 10V, I
D
= 33A
Q
g(tot)
= 86nC (Typ.), V
GS
= 10V
Low Miller Charge
Low Qrr Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)
Qualified to AEC Q101
Formerly developmental type 82884
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Applications
DC/DC Converters and Off-line UPS
Distributed Power Architectures and VRMs
Primary Switch for 24V and 48V Systems
High Voltage Synchronous Rectifier
Direct Injection / Diesel Injection Systems
42V Automotive Load Control
Electronic Valve Train Systems