FDB2614

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200V N-Channel PowerTrench MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. • 62A, 200V, R_DS(on) = 22.9mΩ @V_GS = 10 V • Fast switching speed • Low gate charge • High performance trench technology for extremely low R_DS(on) • High power and current handling capability

Product Status/Pricing/Packing

Fairchild 1,000 piece Budgetary Pricing. *
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Top mark packaging information for product FDB2614 is available. **

Product	Product Status	Eco Status	*Pricing	Package Type	Leads	Packing Method	Package Drawing	**Package Marking Convention	RoHS IPC1752	RoHS/REACH/JIG Certificate of Compliance
FDB2614	Full Production	ROHS Compliant	$3.76	TO-263(D2PAK)	2	TAPE REEL		Line 1:$Y (Fairchild logo) &Z (Asm. Plant Code) &3 (3-Digit Date Code) &K Line 2:FDB Line 3:2614