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300V N-Channel MOSFET, UniFET™
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General Description
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These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
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Features
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RDS(on) = 0.108Ω ( Typ.)@ VGS = 10V, ID = 14A
Low gate charge ( Typ. 39nC)
Low Crss ( Typ. 35pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS compliant
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Datasheet
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Product Status/Pricing/Packaging
| FDB28N30TM | Full Production | RoHS Compliant | $1.32 | TO-263(D2PAK) | 2 | TAPE REEL
| TBD | Line 1: $Y (Fairchild logo)
&Z (Asm. Plant Code)
&3 (3-Digit Date Code)
&K
Line 2: FDB
Line 3: 28N30
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* Fairchild 1,000 piece Budgetary Pricing
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| ** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples |
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Qualification Support
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Eco Status