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250V N-Channel MOSFET
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General Description
These N-Channel enhancement mode power field effect transistors
are produced using Fairchild's proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to minimize
on-state resistance, provide superior switching performance,
and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high efficient
switched mode power supplies and active power factor
correction.
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Features
- 33A, 250V,RDS(on) = 0.094 mW @ VGS = 10V
- Low gate charge ( typical 36.8 nC)
- Low Crss ( typical 39 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
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Datasheet
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Product Status/Pricing/Packaging
| FDB33N25TM | Full Production | RoHS Compliant | $1.30 | TO-263(D2PAK) | 2 | TAPE REEL
| TBD | Line 1: $Y (Fairchild logo)
&Z (Asm. Plant Code)
&3 (3-Digit Date Code)
&K
Line 2: FDB
Line 3: 33N25
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* Fairchild 1,000 piece Budgetary Pricing
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| ** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples |
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Qualification Support
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Eco Status