100V N-Channel PowerTrench® MOSFET
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General Description
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This N-Channel MOSFET is rugged gate version of Fairchild Semiconductor‘s advanced Power Trench® process. This part is tailored for low rDS(on) and low Qg figure of merit, with avalanche ruggedness for a wide range of switching applications.
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Features
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Max rDS(on) = 37 mΩ at VGS = 10 V, ID = 5.9 A
High performance trench technology for extremely low rDS(on)
100% UIL tested
RoHS Compliant
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Applications
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DC-AC Conversion
Synchronous Rectifier
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Datasheet
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Product Status/Pricing/Packaging
| FDB3860 | Full Production | RoHS Compliant | $2.10 | TO-263(D2PAK) | 2 | TAPE REEL
| TS2A | Line 1: $Y (Fairchild logo)
&Z (Asm. Plant Code)
&3 (3-Digit Date Code)
&K
Line 2: FDB
Line 3: 3860
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* Fairchild 1,000 piece Budgetary Pricing
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| ** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples |
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Models
| TO-263(D2PAK)-2 | Electrical | -55°C to 150°C | OrCAD 15.7 | Feb 13, 2009 |
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Qualification Support
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Eco Status