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FDB44N25
250V N-Channel MOSFET

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Contents

General Description
Features
Product Status/Pricing/Packaging
Order Samples
Models
Qualification Support

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

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Features

  • 44A, 250V
    • RDS(ON) = 0.069 Ω @ VGS = 10V
  • Low gate charge (typical 47 nC)
  • Low Crss (typical 60 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability

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Datasheet
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Product Status/Pricing/Packaging      buy now

ProductProduct statusEco StatusPricing*Package typeLeadsPacking methodPackage DrawingPackage Marking Convention**
FDB44N25TMFull ProductionRoHS Compliant$1.74TO-263(D2PAK)2TAPE REEL TBDLine 1: $Y (Fairchild logo)
&Z (Asm. Plant Code)
&E&3 (3-Digit Date Code)
Line 2: FDB Line 3: 44N25
* Fairchild 1,000 piece Budgetary Pricing
** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

Package marking information for product FDB44N25 is available. Click here for more information .

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Models

Package & leadsConditionTemperature rangeVcc rangeSoftware versionRevision date
SABER
TO-263(D2PAK)-2Electrical/Thermal-55°C to 150°C0V to 50VOrCAD 15.7Jan 30, 2008
Electrical/Thermal-55°C to 150°C0V to 50VSaber5.9Jan 30, 2008

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Qualification Support

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Product
FDB44N25TM

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