FDB52N20

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200V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

Product Status/Pricing/Packing

Product Product Status Eco Status *Pricing Package Type Leads Packing Method Package Drawing **Package Marking Convention RoHS IPC1752 RoHS/REACH/JIG Certificate of Compliance
FDB52N20TM Full Production ROHS Compliant $1.9 TO-263(D2PAK) 2 TAPE REEL PDF Line 1:$Y (Fairchild logo)
&Z (Asm. Plant Code)
&3 (3-Digit Date Code)
&K
Line 2:FDB
Line 3:52N20
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Features

  • 52A, 200VRDS(on) = 0.049 mΩ @ VGS = 10V
  • Low gate charge ( typical 49 nC)
  • Low Crss ( typical 66 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability

Applications

  • TBA

Models

For additional information please visit the Models page .

Package & leads Condition Temperature range Vcc range Software version Revision date
PSPICE
TO-263(D2PAK)-2 Thermal;Electrical -55°C to 150°C 0V to 50V OrCAD 15.7 Apr 26, 2011
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