This P-Channel power MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for power management applications.

• -28 A, -20 V
• R_DS(on) = 30 mW@ V_GS = 4.5 V
• R_DS(on) = 40 mW @ V_GS = 2.5 V
• R_DS(on) = 65 mW @ V_GS = 1.8 V
• Critical DC electrical parameters specified at elevated temperature
• High performance trench technology for extremely low R_DS(ON)
• 175°C maximum junction temperature rating

• Battery management
• Load switch
• Voltage regulator