This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R_DS(ON) specifications.

The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

It has been optimized for low gate charge, low R_DS(ON) and fast switching speed.

• 48 A, 30 V
  • R_DS(ON) = 13 mW @ V_GS=10V
  • R_DS(ON) = 17 mW @ V_GS=4.5V
• Critical DC electrical parameters specified at elevated temperature
• High performance trench technology for extremely low R_DS(ON)
• 175°C maximum junction temperature rating