This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.

The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

• 80 A, 30 V.
  • R_DS(ON) = 6.5 mW @ V_GS=10 V
  • R_DS(ON) = 8.5 mW @ V_GS= 4.5 V
• Critical DC electrical parameters specified at elevated temperature
• Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor
• High performance trench technology for extremely low R_DS(ON)
• 175°C maximum junction temperature rating