This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low R_DS(ON) and low gate charge. The FDP6670AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDP6670AS/FDB6670AS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDP6670A/FDB6670A in parallel with a Schottky diode.

• 31A, 30V.
• R_DS(ON) = 8.5 mW @ V_GS = 10V
• R_DS(ON) = 10.5 mW @ V_GS = 4.5V
• Includes SyncFET Schottky body diode
• Low gate charge (28nC typical)
• High performance trench technology for extremely low RDS(ON) and fast switching
• High power and current handling capability