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General Description
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This N–Channel MOSFET has been produced using Fairchild Semiconductor's proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer superior performance benefit in the application.
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Features
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Max rDS(on) = 8.5mΩ at VGS = 10V, ID = 14A
Max rDS(on) = 11mΩ at VGS = 4.5V, ID = 11A
Fast Switching
RoHS compliant
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Applications
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Datasheet
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