FDB86102LZ

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100V N-Channel PowerTrench® MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level.

Product Status/Pricing/Packing

Product Product Status Eco Status *Pricing Package Type Leads Packing Method Package Drawing **Package Marking Convention Qualification Support RoHS IPC1752 RoHS/REACH/
JIG Certificate of Compliance
FDB86102LZ Full Production ROHS Compliant $0.51 TO-263 2L (D2PAK) 2 TAPE REEL PDF Line 1:$Y (Fairchild logo)
&Z (Asm. Plant Code)
&3 (3-Digit Date Code)
&K
Line 2:FDB
Line 3:86102LZ
FIT :  10.7  
RTHETA (JA) :  40  °C/W
RTHETA (JC) :  1.9  °C/W
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Features

  • Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 8.3 A
  • Max rDS(on) = 35 mΩ at VGS = 4.5 V, ID = 6.8 A
  • HBM ESD protection level 6 kV typical (Note 4)
  • Very low Qg and Qgd compared to competing trench technologies
  • Fast switching speed
  • 100% UIL Tested
  • RoHS Compliant

Applications

  • TBA

Application Notes

Models

For additional information please visit the Models page .

Package Condition Temperature range Vcc range Software version Revision date
PSPICE
TO-263 2L (D2PAK) Electrical -55°C to 150°C N/A Orcad 16.3 Feb 28, 2012
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