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200V N-Channel PowerTrench® MOSFET
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General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS(ON) and fast switching speed.
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Features
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1.1 A, 200V
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RDS(on) = 725 mW@ VGS = 10 V
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High performance trench technology for extremely
low RDS(ON)
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High power and current handling capability
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Fast switching speed
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Low gate charge (8nC typical)
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Applications
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