This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R_DS(ON) specifications.
The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

• 4.3 A, 60 V. R_DS(ON) = 0.055 W@ V_GS = 10 V, R_DS(ON) = 0.064 W @ V_GS = 6 V.
• Low gate charge (12.5nC typical).
• Fast switching speed.
• High performance trench technology for extremely low R_DS(ON).
• SuperSOT™-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).