These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

• Q1 -4.2A, -20V
• R_DS(ON) = 55 mW @ V_GS = -4.5V
• R_DS(ON) = 82 mW @ V_GS = -2.5V
• Q2 5.9A, 20V
• R_DS(ON) = 27 mW @ V_GS = 4.5V
• R_DS(ON) = 39 mW @ V_GS = 2.5V
• Low gate charge
• High performance trench technology for extremely low R_DS(ON)
• FLMP SSOT-6 package: Enhanced thermal performance in industry-standard package size

• DC/DC converter
• Load switch
• Motor Driving