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Complementary PowerTrench® MOSFET Recommend FDC6020C_F077
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General Description
These N & P-Channel MOSFETs are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain superior
switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
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Features
- Q1 -4.2A, -20V
- RDS(ON) = 55 mW @ VGS = -4.5V
- RDS(ON) = 82 mW @ VGS = -2.5V
- Q2 5.9A, 20V
- RDS(ON) = 27 mW @ VGS = 4.5V
- RDS(ON) = 39 mW @ VGS = 2.5V
- Low gate charge
- High performance trench technology for extremely
low RDS(ON)
- FLMP SSOT-6 package: Enhanced thermal
performance in industry-standard package size
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Applications
- DC/DC converter
- Load switch
- Motor Driving
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