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FDC637BNZ
20V N-Channel 2.5V Specified PowerTrench MOSFET

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Contents

General Description
Features
Applications
Product Status/Pricing/Packaging
Order Samples
Models
Qualification Support

General Description

This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

These devices have been designed to offer exceptional power dissipation in a very small footprint compared with bigger SO-8 and TSSOP-8 packages.

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Features

  • Max rDS(on) = 24mΩ at VGS = 4.5V, ID = 6.2A
  • Max rDS(on) = 32mΩ at VGS = 2.5V, ID = 5.2A
  • Fast switching speed
  • Low gate charge (8nC typical)
  • High performance trench technology for extremely low rDS(on)
  • SuperSOT™¨C6 package: small footprint (72% smaller than standard SO-8; low profile (1mm thick)
  • HBM ESD protection level > 2kV typical (Note 3)
  • Manufactured using green packaging material
  • Halide-Free
  • RoHS Compliant
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    Applications

  • DC - DC Conversion
  • Load switch
  • Battery Protection
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    Datasheet
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    Product Status/Pricing/Packaging      buy now

    ProductProduct statusEco StatusPricing*Package typeLeadsPacking methodPackage DrawingPackage Marking Convention**
    FDC637BNZFull ProductionGreen$0.21SSOT-66TAPE REEL PDFLine 1: &E&E&Y (Binary Calendar Year Coding)
    Line 2: .637Z
    * Fairchild 1,000 piece Budgetary Pricing
    ** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

    Package marking information for product FDC637BNZ is available. Click here for more information .

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    Models

    Package & leadsConditionTemperature rangeSoftware versionRevision date
    Pspice_Bsim3.1
    SSOT-6-6Electrical-55°C to 150°COrCAD 15.7N/A

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    Qualification Support

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    Product
    FDC637BNZ

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