20V N-Channel 2.5V Specified PowerTrench® MOSFET
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General Description
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This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
These devices have been designed to offer exceptional power dissipation in a very small footprint compared with bigger SO-8 and TSSOP-8 packages.
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Features
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Max rDS(on) = 24mΩ at VGS = 4.5V, ID = 6.2A
Max rDS(on) = 32mΩ at VGS = 2.5V, ID = 5.2A
Fast switching speed
Low gate charge (8nC typical)
High performance trench technology for extremely low rDS(on)
SuperSOT™¨C6 package: small footprint (72% smaller than standard SO-8; low profile (1mm thick)
HBM ESD protection level > 2kV typical (Note 3)
Manufactured using green packaging material
Halide-Free
RoHS Compliant
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Applications
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DC - DC Conversion
Load switch
Battery Protection
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Datasheet
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Product Status/Pricing/Packaging
| FDC637BNZ | Full Production | Green | $0.208 | SSOT-6 | 6 | TAPE REEL
| | Line 1: &E&E&Y (Binary Calendar Year Coding)
Line 2: .637Z
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* Fairchild 1,000 piece Budgetary Pricing
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| ** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples |
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Models
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Qualification Support
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Eco Status