FDC8602

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100V Dual N-Channel PowerTrench® MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.

Product Status/Pricing/Packing

Product Product Status Eco Status *Pricing Package Type Leads Packing Method Package Drawing **Package Marking Convention Qualification Support RoHS IPC1752 RoHS/REACH/
JIG Certificate of Compliance
FDC8602 Full Production Green as of Sep 2009 $0.261 SSOT 6L 6 TAPE REEL PDF Line 1:&E (Space)
&Y (Binary Calendar Year Coding)
Line 2:.862
RTHETA (JA) :  130  °C/W
RTHETA (JC) :  60  °C/W
Moisture Sensitivity Level (MSL) :  1  
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Features

  • Max rDS(on) = 350 mΩ at VGS = 10 V, ID = 1.2 A
  • Max rDS(on) = 575 mΩ at VGS = 6 V, ID = 0.9 A
  • High performance trench technology for extremely low rDS(on)
  • High power and current handling capability in a widely used surface mount package
  • Fast switching speed
  • 100% UIL Tested
  • RoHS Compliant

Application Notes

Models

For additional information please visit the Models page .

Package Condition Temperature range Vcc range Software version Revision date
PSPICE
SSOT 6L Electrical -55°C to 150°C N/A Orcad 16.3 Feb 28, 2012
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