|
General Description
|
This P-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench® technology to
deliver low RDS(on) and optimized Bvdss capability to offer
superior performance benefit in the applications. and optimized
switching performance capability reducing power dissipation
losses in converter/inverter applications.
|
back to top
Features
- Maximum RDS(on) = 12.3mΩ at VGS = -10V, ID = -12.7A
- Maximum RDS(on) = 18.0mΩ at VGS = -4.5V, ID = -10.4A
- High performance trench technology for extremely low RDS(on)
- RoHS Compliant
|
back to top
Applications
back to top
|  | 
Datasheet
Download this datasheet
e-mail this datasheet
This page
Print version
|