FDD6N50

Datasheet Buy Sample

500V N-Channel MOSFET, UniFET™

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

Product Status/Pricing/Packing

Fairchild 1,000 piece Budgetary Pricing. *
If there is no sample button displayed at the top of the page, please contact one of the Fairchild distributors or your local sales office to obtain samples.
Top mark packaging information for product FDD6N50 is available. **

Product	Product Status	Eco Status	*Pricing	Package Type	Leads	Packing Method	Package Drawing	**Package Marking Convention	Qualification Support	RoHS IPC1752	RoHS/REACH/ JIG Certificate of Compliance
FDD6N50TM	Full Production	ROHS Compliant	$0.86	TO-252 3L (DPAK)	3	TAPE REEL		Line 1:$Y (Fairchild logo) &Z (Asm. Plant Code) &3 (3-Digit Date Code) &K Line 2:FDD Line 3:6N50	FIT : 12.86 RTHETA (JA) : 83 °C/W RTHETA (JC) : 1.4 °C/W Show more ... Moisture Sensitivity Level (MSL) : 1 Max Reflow Temp : 260
FDD6N50TM_WS	Full Production	ROHS Compliant	$0.84	TO-252 3L (DPAK)	3	TAPE REEL		Line 1:$Y (Fairchild logo) &Z (Asm. Plant Code) &3 (3-Digit Date Code) &K Line 2:FDD Line 3:6N50S	FIT : 12.86 RTHETA (JA) : 83 °C/W RTHETA (JC) : 1.4 °C/W Show more ... Moisture Sensitivity Level (MSL) : 1 Max Reflow Temp : 260