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General Description
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These dual N and P-Channel enhancement mode Power
MOSFETs are produced using Fairchild Semiconductor’s
advanced PowerTrench- process that has been especially
tailored to minimize on-state resistance and yet maintain
superior switching performance.
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Features
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Q1: N-Channel
Max rDS(on) = 24mΩ at VGS = 10V, ID = 9.0A
Max rDS(on) = 30mΩ at VGS = 4.5V, ID = 7.0A
Q2:P-Channel
Max rDS(on) = 54mΩat VGS = -10V, ID = -6.5A
Max rDS(on) = 70mΩat VGS = -4.5V, ID = -5.6A
Fast switching speed
RoHS Compliant
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Applications
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Datasheet
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