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FDD86110

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100V N-Channel PowerTrench® MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Product Status/Pricing/Packing

Fairchild 1,000 piece Budgetary Pricing. *
If there is no sample button displayed at the top of the page, please contact one of the Fairchild distributors or your local sales office to obtain samples.
Top mark packaging information for product FDD86110 is available. **

Product	Product Status	Eco Status	*Pricing	Package Type	Leads	Packing Method	Package Drawing	**Package Marking Convention	Qualification Support	RoHS IPC1752	RoHS/REACH/ JIG Certificate of Compliance
FDD86110	Full Production	Green as of Jul 2011	$0.87	TO-252 3L (DPAK)	3	TAPE REEL		Line 1:$Y (Fairchild logo) &Z (Asm. Plant Code) &3 (3-Digit Date Code) &K Line 2:FDD Line 3:86110	RTHETA (JA) : 40 °C/W RTHETA (JC) : 0.98 °C/W Moisture Sensitivity Level (MSL) : 1 Show more ... Max Reflow Temp : 260

Support

Engineering Connections

Features

Max r_DS(on) = 10.2 mΩ at VGS = 10 V, ID = 12.5 A
Max r_DS(on) = 16 mΩ at VGS = 6 V, ID = 9.8 A
100% UIL tested
RoHS Compliant"

Application Notes

AN-7510: A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options (222 K) Mar 05, 2011
AN-7533: A Revised MOSFET Model With Dynamic Temperature Compensation (132 K) Mar 05, 2011
AN-9010: MOSFET Basics (361 K) Mar 05, 2011
AN-558: Introduction to Power MOSFETs and their Applications (205 K) Mar 05, 2011

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Models

For additional information please visit the Models page .

Package	Condition	Temperature range	Vcc range	Software version	Revision date
PSPICE
TO-252 3L (DPAK)	Electrical	-55°C to 150°C	N/A	Orcad 16.3	Feb 28, 2012