This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r_DS(ON) and fast switching speed.

• R_DS(ON) = 3.9 mW, V_GS = 10V, I_D = 35V
• R_DS(ON) = 4.4 mW, V_GS = 4.5V, I_D = 35V
• High performance trench technology for extremely low R_DS(ON)
• Low gate charge
• High power and current handling capability

• DC/DC converter