FDD8N50NZ

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500V N-Channel MOSFET, UniFET-II™

General Description

This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction.

Product Status/Pricing/Packing

Fairchild 1,000 piece Budgetary Pricing. *
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Top mark packaging information for product FDD8N50NZ is available. **

Product	Product Status	Eco Status	*Pricing	Package Type	Leads	Packing Method	Package Drawing	**Package Marking Convention	Qualification Support	RoHS IPC1752	RoHS/REACH/ JIG Certificate of Compliance
FDD8N50NZTM	Full Production	Green as of May 2010	$0.78	TO-252 3L (DPAK)	3	TAPE REEL		Line 1:$Y (Fairchild logo) &Z (Asm. Plant Code) &3 (3-Digit Date Code) &K Line 2:FDD Line 3:8N50NZ	FIT : 12.86 RTHETA (JA) : 62.5 °C/W RTHETA (JC) : 1.4 °C/W Show more ... Moisture Sensitivity Level (MSL) : 1 Max Reflow Temp : 260