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FDFMA2N028Z
20V Integrated N-Channel PowerTrench MOSFET and Schottky Diode

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Contents

•General Description
•Features
•Applications
•Product Status/Pricing/Packaging
•Order Samples
•Models
•Qualification Support

General Description

This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra–portable applications. It features a MOSFET with low on–state resistance, and an independently connected schottky diode with low forward voltage.

The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications.

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Features

MOSFET
  • Max rDS(on) = 68mΩ at VGS = 4.5V, ID = 3.7A
  • Max rDS(on) = 86mΩ at VGS = 2.5V, ID = 3.3A
  • HBM ESD protection level > 2kV (Note 3)
      • Schottky
  • VF < 0.37V @ 500mA
  • Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm
  • RoHS Compliant
    		•

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    Applications

  • DC–DC Conversion
    		•

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    Datasheet
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    Product Status/Pricing/Packaging      buy now

    ProductProduct statusEco StatusPricing*Package typeLeadsPacking methodPackage DrawingPackage Marking Convention**
    FDFMA2N028ZFull ProductionGreen$0.39MicroFET6TAPE REEL PDFLine 1: &E&Y (Binary Calendar Year Coding)
    Line 2: &ON28&C Line 3: &.&O&V
    * Fairchild 1,000 piece Budgetary Pricing
    ** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

    Package marking information for product FDFMA2N028Z is available. Click here for more information .

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    Models

    Package & leadsConditionTemperature rangeSoftware versionRevision date
    Pspice_Bsim3.1
    MicroFET-6Electrical-55°C to 150°COrCAD 10.3Jan 4, 2007

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    Qualification Support

    Click on a product for detailed qualification data

    Product
    FDFMA2N028Z

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