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20V Integrated N-Channel PowerTrench® MOSFET and Schottky Diode
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General Description
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This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra–portable applications. It features a MOSFET with low on–state resistance, and an independently connected schottky diode with low forward voltage.
The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications.
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Features
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MOSFET
Max rDS(on) = 68mΩ at VGS = 4.5V, ID = 3.7A
Max rDS(on) = 86mΩ at VGS = 2.5V, ID = 3.3A
HBM ESD protection level > 2kV (Note 3)
VF < 0.37V @ 500mA
Low profile - 0.8 mm maximum - in the new package MicroFET
2x2 mm
RoHS Compliant
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Applications
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Datasheet
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Product Status/Pricing/Packaging
| FDFMA2N028Z | Full Production | Green | $0.39 | MicroFET | 6 | TAPE REEL
| | Line 1: &E&Y (Binary Calendar Year Coding)
Line 2: &ON28&C
Line 3: &.&O&V
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* Fairchild 1,000 piece Budgetary Pricing
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| ** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples |
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Models
| MicroFET-6 | Electrical | -55°C to 150°C | OrCAD 10.3 | Jan 4, 2007 |
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Qualification Support
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Eco Status