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FDFMA2P857
-20V Integrated P-Channel PowerTrench MOSFET and Schottky Diode

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Contents

•General Description
•Features
•Product Status/Pricing/Packaging
•Order Samples
•Models
•Qualification Support

General Description

This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for minimum conduction losses.

The MicroFET 2x2 package offers exceptional thermal performance for it's physical size and is well suited to linear mode applications.

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Features

MOSFET:

  • Max rDS(on) = 120mΩ at VGS = - 4.5V, ID = - 3.0A
  • Max rDS(on) = 160mΩ at VGS = - 2.5V, ID = - 2.5A
  • Max rDS(on) = 240mΩ at VGS = - 1.8V, ID = - 1.0A

    • Schottky:

  • VF < 0.54V @ 1A
  • Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm
  • RoHS Compliant
  		•

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    Datasheet
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    Product Status/Pricing/Packaging      buy now

    ProductProduct statusEco StatusPricing*Package typeLeadsPacking methodPackage DrawingPackage Marking Convention**
    FDFMA2P857Full ProductionGreen$0.39MicroFET6TAPE REEL PDFLine 1: &E&Y (Binary Calendar Year Coding)
    Line 2: &O857&C Line 3: &.&O&V
    * Fairchild 1,000 piece Budgetary Pricing
    ** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

    Package marking information for product FDFMA2P857 is available. Click here for more information .

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    Models

    Package & leadsConditionTemperature rangeSoftware versionRevision date
    Pspice_Bsim3.1
    MicroFET-6Electrical-55°C to 150°COrCAD 15.7Feb 16, 2007

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    Qualification Support

    Click on a product for detailed qualification data

    Product
    FDFMA2P857

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