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-20V Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
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General Description
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This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for minimum conduction losses.
The MicroFET 2x2 package offers exceptional thermal performance for it's physical size and is well suited to linear mode applications.
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Features
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MOSFET:
Max rDS(on) = 120mΩ at VGS = - 4.5V, ID = - 3.0A
Max rDS(on) = 160mΩ at VGS = - 2.5V, ID = - 2.5A
Max rDS(on) = 240mΩ at VGS = - 1.8V, ID = - 1.0A
Schottky:
VF < 0.54V @ 1A
Low profile - 0.8 mm maximum - in the new package
MicroFET 2x2 mm
RoHS Compliant
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Datasheet
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Product Status/Pricing/Packaging
| FDFMA2P857 | Full Production | Green | $0.39 | MicroFET | 6 | TAPE REEL
| | Line 1: &E&Y (Binary Calendar Year Coding)
Line 2: &O857&C
Line 3: &.&O&V
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* Fairchild 1,000 piece Budgetary Pricing
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| ** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples |
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Models
| MicroFET-6 | Electrical | -55°C to 150°C | OrCAD 15.7 | Feb 16, 2007 |
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Qualification Support
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Eco Status