FDFMA3N109

This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra-portable applications. It features a MOSFET with low input capacitance, total gate charge and onstate resistance, and an independently connected schottky diode with low forward voltage and reverse leakage current to maximize boost efficiency.     The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications.

• Fairchild 1,000 piece Budgetary Pricing. *
• If there is no sample button displayed at the top of the page, please contact one of the Fairchild distributors or your local sales office to obtain samples.
• Top mark packaging information for product FDFMA3N109 is available. **

Product	Product Status	Eco Status	*Pricing	Package Type	Leads	Packing Method	Package Drawing	**Package Marking Convention	RoHS IPC1752	RoHS/REACH/JIG Certificate of Compliance
FDFMA3N109	Full Production	Green as of Aug 2006	$0.239	MLP 6-LEAD	6	TAPE REEL		Line 1:&E (Space) &Y (Binary Calendar Year Coding) Show more ... Line 2:&O (Plant Code) 109&C (Die Run) Line 3:&. (Pin One) &O (Plant Code) &V (Eight Week Binary Datecoding)