FDFME3N311ZT

This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra-portable applications. It features a MOSFET with low input capacitance, total gate charge and on-state resistance. An independently connected schottky diode with low forward voltage and reverse leakage current to maximize boost efficiency.

• Fairchild 1,000 piece Budgetary Pricing. *
• If there is no sample button displayed at the top of the page, please contact one of the Fairchild distributors or your local sales office to obtain samples.
• Top mark packaging information for product FDFME3N311ZT is available. **

Product	Product Status	Eco Status	*Pricing	Package Type	Leads	Packing Method	Package Drawing	**Package Marking Convention	RoHS IPC1752	RoHS/REACH/JIG Certificate of Compliance
FDFME3N311ZT	Full Production	Green as of Dec 2008	$0.247	MicroFET	6	TAPE REEL		Line 1:&E (Space) &Y (Binary Calendar Year Coding) Show more ... Line 2:&O (Plant Code) 1T&C (Die Run) Line 3:&. (Pin One) &O (Plant Code) &V (Eight Week Binary Datecoding)