Dual N-Channel Digital FETGeneral DescriptionThese dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS. Product Status/Pricing/Packing
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Features
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Application Notes
ModelsFor additional information please visit the Models page .
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