FDG6301N_F085

These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.

• Fairchild 1,000 piece Budgetary Pricing. *
• If there is no sample button displayed at the top of the page, please contact one of the Fairchild distributors or your local sales office to obtain samples.
• Top mark packaging information for product FDG6301N_F085 is available. **

Product	Product Status	Eco Status	*Pricing	Package Type	Leads	Packing Method	Package Drawing	**Package Marking Convention	Qualification Support	RoHS IPC1752	RoHS/REACH/ JIG Certificate of Compliance
FDG6301N_F085	Full Production	Green as of Dec 2010	$0.15	SC70 6L	6	TAPE REEL		Line 1:&E (Space) &E (Space) &E (Space) . Line 2:&Y (Binary Calendar Year Coding) Line 3:.01	FIT :  6.5   ESD (HBM) :  6000  V RTHETA (JA) :  415  °C/W Show more ... Moisture Sensitivity Level (MSL) :  1   Max Reflow Temp :  260