FDG6332C_F085

Datasheet Buy Sample

20V N &P - Channel Power Trench® MOSFET

General Description

The N & P-Channel MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive TSSOP-8 and SSOP-6 packages are impractical.

Product Status/Pricing/Packing

Fairchild 1,000 piece Budgetary Pricing. *
If there is no sample button displayed at the top of the page, please contact one of the Fairchild distributors or your local sales office to obtain samples.
Top mark packaging information for product FDG6332C_F085 is available. **

Product	Product Status	Eco Status	*Pricing	Package Type	Leads	Packing Method	Package Drawing	**Package Marking Convention	RoHS IPC1752	RoHS/REACH/JIG Certificate of Compliance
FDG6332C_F085	Full Production	Green as of Dec 2010	$0.175	SC70	6	TAPE REEL		Line 1:&Y (Binary Calendar Year Coding) Line 2:.32

Support

Engineering Connections

Qualification Support

Customer qualification data for the FDG6332C_F085

Features

Q1 0.7A, 20V. R_DS(ON) = 300mΩ @ V_GS = 4.5V R_DS(ON) = 400mΩ @ V_GS = 2.5V
Q2 -0.6A, -20V. R_DS(ON) = 420mΩ @ V_GS = -4.5V R_DS(ON) = 630mΩ @ V_GS = -2.5V
Low gate charge
High performance trench technology for extremely low R_DS(ON)
SC70-60 package: small footprint (51% smaller than SSOT-6); low profile (1mm thick)
Qualified to AEC Q101
RoHS Compliant

Applications

TBA

Models

For additional information please visit the Models page .

Package & leads	Condition	Temperature range	Vcc range	Software version	Revision date
PSPICE
SC70-6	Electrical	25°C to 125°C	N/A	Orcad 9.1	Apr 26, 2011