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FDH45N50F
500V N-Channel MOSFET, FRFET

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Contents

General Description
Features
Product Status/Pricing/Packaging
Order Samples
Qualification Support

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

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Features

  • 45A, 500V, RDS(on) = 0.12Ω @VGS = 10 V
  • Low gate charge ( typical 105 nC)
  • Low Crss ( typical 62 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability
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    Product Status/Pricing/Packaging      buy now

    ProductProduct statusEco StatusPackage typeLeadsPacking methodPackage DrawingPackage Marking Convention**
    FDH45N50F_F133PreliminaryRoHS CompliantTO-2473RAIL PDFLine 1: $Y (Fairchild logo)
    &Z (Asm. Plant Code)
    &E&3 (3-Digit Date Code)
    Line 2: FDH Line 3: 45N50F

    Package marking information for product FDH45N50F is available. Click here for more information .

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    Qualification Support

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    Product
    FDH45N50F_F133

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